JP2009022052A - パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ - Google Patents
パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ Download PDFInfo
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- JP2009022052A JP2009022052A JP2008268710A JP2008268710A JP2009022052A JP 2009022052 A JP2009022052 A JP 2009022052A JP 2008268710 A JP2008268710 A JP 2008268710A JP 2008268710 A JP2008268710 A JP 2008268710A JP 2009022052 A JP2009022052 A JP 2009022052A
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- 238000000034 method Methods 0.000 claims abstract description 49
- 238000005530 etching Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000003989 dielectric material Substances 0.000 claims abstract description 9
- 239000007769 metal material Substances 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 59
- 229910052751 metal Inorganic materials 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 25
- 230000008878 coupling Effects 0.000 abstract description 8
- 238000010168 coupling process Methods 0.000 abstract description 8
- 238000005859 coupling reaction Methods 0.000 abstract description 8
- 238000002955 isolation Methods 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 155
- 230000004044 response Effects 0.000 description 9
- 230000008021 deposition Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012814 acoustic material Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Headphones And Earphones (AREA)
- Aerials With Secondary Devices (AREA)
Abstract
【解決手段】(a)音響ミラーとして働く誘電体材料および金属材料を選択する工程と、(b)金属層がエッチング・プロセスによって離散的部分へパターン化され、前記エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除いて、異なった共振器部分の下にある層部分のあいだに電気絶縁が提供されるようにする作製手順を介して少なくとも1つの金属層を提供する工程とを備え、共振器のあいだの容量結合が減少されたマルチ共振器BAWフィルタを提供する方法。
【選択図】図3
Description
[実施態様1] 複数の共振器部分のために音響ミラーとして働く複数の材料層を有し、各々の共振器部分が圧電体層を挟む少なくとも上部電極と下部電極とを含むマルチ共振器バルク音波(BAW)フィルタを作製する方法であって、(a)音響ミラーとして働く幾つかの材料層のための誘電体材料、および他の層のための金属材料を選択する工程と、(b)金属層がエッチング・プロセスによって離散的部分へパターン化され、前記エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除いて、異なった共振器部分の下にある層部分のあいだに電気絶縁が提供されるようにする作製手順を介して少なくとも1つの金属層を提供する工程とを備え、それによって、類似の方法で作製される音響ミラーの金属層をパターン化するエッチング・ステップを除外したこと以外では類似した他の方法で作製されたマルチ共振器BAWフィルタに存在する容量結合と比較して、共振器のあいだの容量結合が減少されたマルチ共振器BAWフィルタを提供する方法。
Claims (6)
- 複数の共振器部分のために音響ミラーとして働く複数の材料層を有し、各々の共振器部分が圧電体層を挟む少なくとも上部電極と下部電極とを含むマルチ共振器バルク音波(BAW)フィルタを作製する方法であって、
(a)音響ミラーとして働く幾つかの材料層に用いる誘電体材料、および各共振器部分に用いる金属材料を選択する工程と、
(b)金属層がエッチング・プロセスによって離散的部分へパターン化され、前記エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除く工程とを備えるマルチ共振器BAWフィルタを提供する方法。 - 音響ミラーのすべての金属層がエッチング・プロセスによって離散的部分へパターン化され、エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除くようにする請求項1記載の方法。
- 工程(b)が音響ミラーの異なった層を順次に堆積するステップを含み、誘電体層が金属層と交互に積層し共振器に最も近い層は誘電体層であり、各々の金属層はつぎの誘電体層を堆積する前に工程(b)のようにパターン化される請求項1記載の方法。
- 共振器部分の少なくとも1つが、上部電極、ときには接地される中間電極、および下部電極を含む積み重ねられた結晶構造であり、さらに3つの電極のあいだに挟まれた2つの圧電体層を含む請求項1記載の方法。
- 複数の共振器部分のために音響ミラーとして働く複数の材料層を有し、各々の共振器部分が圧電体層を挟む少なくとも上部電極と下部電極とを含むマルチ共振器バルク音波(BAW)フィルタであって、音響ミラーの幾つかの層は誘電体材料から作製され、他の層は金属材料から作製され、さらに、少なくとも1つの金属層はエッチング・プロセスによって離散的部分へパターン化され、前記エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除くようにするマルチ共振器バルク音波フィルタ。
- すべての金属層がエッチング・プロセスによって離散的部分へパターン化され、エッチング・プロセスは、異なった共振器部分が置かれるべき場所のあいだの金属層を充分に取り除くようにする請求項5記載のマルチ共振器バルク音波フィルタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/753,214 | 2001-01-02 | ||
US09/753,214 US6496085B2 (en) | 2001-01-02 | 2001-01-02 | Solidly mounted multi-resonator bulk acoustic wave filter with a patterned acoustic mirror |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2001388031A Division JP4248177B2 (ja) | 2001-01-02 | 2001-12-20 | パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ |
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JP2009022052A true JP2009022052A (ja) | 2009-01-29 |
JP4838292B2 JP4838292B2 (ja) | 2011-12-14 |
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JP2001388031A Expired - Lifetime JP4248177B2 (ja) | 2001-01-02 | 2001-12-20 | パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ |
JP2008268710A Expired - Fee Related JP4838292B2 (ja) | 2001-01-02 | 2008-10-17 | パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ |
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JP2001388031A Expired - Lifetime JP4248177B2 (ja) | 2001-01-02 | 2001-12-20 | パターン化された音響ミラーを固体的に取り付けられたマルチ共振器バルク音波フィルタ |
Country Status (6)
Country | Link |
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US (1) | US6496085B2 (ja) |
EP (1) | EP1227582B8 (ja) |
JP (2) | JP4248177B2 (ja) |
CN (1) | CN1208898C (ja) |
AT (1) | ATE400084T1 (ja) |
DE (1) | DE60134621D1 (ja) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3903848B2 (ja) * | 2001-07-02 | 2007-04-11 | 株式会社村田製作所 | 圧電共振子、圧電共振子の製造方法、圧電フィルタ、圧電フィルタの製造方法、デュプレクサおよび電子通信機器 |
JP2003229743A (ja) * | 2001-11-29 | 2003-08-15 | Murata Mfg Co Ltd | 圧電フィルタ、通信装置および圧電フィルタの製造方法 |
DE10200741A1 (de) * | 2002-01-11 | 2003-07-24 | Infineon Technologies Ag | Verfahren zur Herstellung einer topologieoptimierten Elektrode für einen Resonator in Dünnfilmtechnologie |
US20100107389A1 (en) * | 2002-01-11 | 2010-05-06 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method of fabricating an electrode for a bulk acoustic resonator |
DE10246791B4 (de) * | 2002-10-08 | 2017-10-19 | Snaptrack, Inc. | Mit akustischen Volumenwellen arbeitender Resonator und Schaltung mit dem Resonator |
DE10258422A1 (de) | 2002-12-13 | 2004-06-24 | Epcos Ag | Mit akustischen Volumenwellen arbeitendes Bauelement mit gekoppelten Resonatoren |
DE10301261B4 (de) | 2003-01-15 | 2018-03-22 | Snaptrack, Inc. | Mit akustischen Volumenwellen arbeitendes Bauelement und Verfahren zur Herstellung |
US7275292B2 (en) * | 2003-03-07 | 2007-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for fabricating an acoustical resonator on a substrate |
JP3945486B2 (ja) * | 2004-02-18 | 2007-07-18 | ソニー株式会社 | 薄膜バルク音響共振子およびその製造方法 |
KR100622955B1 (ko) * | 2004-04-06 | 2006-09-18 | 삼성전자주식회사 | 박막 벌크 음향 공진기 및 그 제조방법 |
US7388454B2 (en) | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
DE102004054895B4 (de) * | 2004-11-12 | 2007-04-19 | Infineon Technologies Ag | Dünnschicht-BAW-Filter sowie Verfahren zur Herstellung eines Dünnschicht-BAW-Filters |
US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
US7202560B2 (en) | 2004-12-15 | 2007-04-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Wafer bonding of micro-electro mechanical systems to active circuitry |
US7791434B2 (en) | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
US7369013B2 (en) | 2005-04-06 | 2008-05-06 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using filled recessed region |
FR2889374A1 (fr) * | 2005-07-29 | 2007-02-02 | Michelin Soc Tech | Structure resonnante hybride pour verifier des parametres d'un pneumatique |
US7737807B2 (en) | 2005-10-18 | 2010-06-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators |
US7675390B2 (en) | 2005-10-18 | 2010-03-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator |
US7463499B2 (en) | 2005-10-31 | 2008-12-09 | Avago Technologies General Ip (Singapore) Pte Ltd. | AC-DC power converter |
JP2007129391A (ja) * | 2005-11-02 | 2007-05-24 | Matsushita Electric Ind Co Ltd | 音響共振器及びフィルタ |
US7544612B1 (en) | 2006-01-20 | 2009-06-09 | Skyworks Solutions, Inc. | Method and structure for reducing the effect of vertical steps in patterned layers in semiconductor structures |
US7414350B1 (en) * | 2006-03-03 | 2008-08-19 | Skyworks Solutions, Inc. | Acoustic mirror structure for a bulk acoustic wave structure and method for fabricating same |
US7746677B2 (en) | 2006-03-09 | 2010-06-29 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | AC-DC converter circuit and power supply |
US7479685B2 (en) | 2006-03-10 | 2009-01-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Electronic device on substrate with cavity and mitigated parasitic leakage path |
JP4525623B2 (ja) * | 2006-03-23 | 2010-08-18 | エプソントヨコム株式会社 | 圧電振動片の製造方法 |
DE102006023165B4 (de) * | 2006-05-17 | 2008-02-14 | Infineon Technologies Ag | Verfahren zur Herstellung eines akustischen Spiegels aus alternierend angeordneten Schichten hoher und niedriger akustischer Impedanz |
JP5096695B2 (ja) * | 2006-05-30 | 2012-12-12 | パナソニック株式会社 | 薄膜音響共振器 |
JP4846477B2 (ja) * | 2006-07-26 | 2011-12-28 | パナソニック株式会社 | 薄膜音響共振器の製造方法 |
JP2008172713A (ja) * | 2007-01-15 | 2008-07-24 | Hitachi Media Electoronics Co Ltd | 圧電薄膜共振器および圧電薄膜共振器フィルタおよびその製造方法 |
US8188548B2 (en) * | 2007-02-15 | 2012-05-29 | Infineon Technologies Ag | Device and method for reducing a voltage dependent capacitive coupling |
US8586195B2 (en) * | 2007-07-11 | 2013-11-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method for forming an acoustic mirror with reduced metal layer roughness and related structure |
US20090053401A1 (en) * | 2007-08-24 | 2009-02-26 | Maxim Integrated Products, Inc. | Piezoelectric deposition for BAW resonators |
WO2009031358A1 (ja) | 2007-09-06 | 2009-03-12 | Murata Manufacturing Co., Ltd. | 圧電共振子 |
US7791435B2 (en) | 2007-09-28 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Single stack coupled resonators having differential output |
WO2009043370A1 (en) * | 2007-10-01 | 2009-04-09 | Telefonaktiebolaget Lm Ericsson (Publ) | A voltage controlled switching device |
DE112008002726T5 (de) * | 2007-10-18 | 2010-08-26 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | BAW-Struktur mit reduzierten topografischen Stufen und verwandtes Verfahren |
US8512800B2 (en) | 2007-12-04 | 2013-08-20 | Triquint Semiconductor, Inc. | Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters |
US7732977B2 (en) | 2008-04-30 | 2010-06-08 | Avago Technologies Wireless Ip (Singapore) | Transceiver circuit for film bulk acoustic resonator (FBAR) transducers |
US7855618B2 (en) | 2008-04-30 | 2010-12-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator electrical impedance transformers |
US7768364B2 (en) * | 2008-06-09 | 2010-08-03 | Maxim Integrated Products, Inc. | Bulk acoustic resonators with multi-layer electrodes |
US8248185B2 (en) | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
JP5113870B2 (ja) * | 2009-08-27 | 2013-01-09 | 日本電波工業株式会社 | 表面実装用水晶振動子の製造方法 |
US8193877B2 (en) | 2009-11-30 | 2012-06-05 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Duplexer with negative phase shifting circuit |
US8796904B2 (en) | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
US9243316B2 (en) | 2010-01-22 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric material with selected c-axis orientation |
US8962443B2 (en) | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
US9048812B2 (en) | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
US9154112B2 (en) | 2011-02-28 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
US9083302B2 (en) | 2011-02-28 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
US9148117B2 (en) | 2011-02-28 | 2015-09-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
US9136818B2 (en) | 2011-02-28 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked acoustic resonator comprising a bridge |
US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
US8575820B2 (en) | 2011-03-29 | 2013-11-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator |
US8350445B1 (en) | 2011-06-16 | 2013-01-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer and bridge |
US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
CN107408936B (zh) * | 2015-03-16 | 2020-12-11 | 株式会社村田制作所 | 弹性波装置及其制造方法 |
US9602076B1 (en) * | 2015-05-19 | 2017-03-21 | Qorvo Us, Inc. | Resonators with balancing capacitor |
US10581403B2 (en) | 2016-07-11 | 2020-03-03 | Qorvo Us, Inc. | Device having a titanium-alloyed surface |
US10361676B2 (en) * | 2017-09-29 | 2019-07-23 | Qorvo Us, Inc. | Baw filter structure with internal electrostatic shielding |
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US11632097B2 (en) | 2020-11-04 | 2023-04-18 | Qorvo Us, Inc. | Coupled resonator filter device |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63177605A (ja) * | 1987-01-19 | 1988-07-21 | Toshiba Corp | 圧電薄膜共振子 |
JPS63187713A (ja) * | 1987-01-29 | 1988-08-03 | Toshiba Corp | 集積型圧電薄膜機能素子 |
JPH08186467A (ja) * | 1994-12-29 | 1996-07-16 | Murata Mfg Co Ltd | 拡がり振動型圧電振動子およびその製造方法 |
JPH10126160A (ja) * | 1996-10-02 | 1998-05-15 | Nokia Mobile Phones Ltd | 振幅変調および位相変調を行うための整調可能な薄膜バルク型音響共振器が組み込まれている装置 |
WO1998052280A1 (fr) * | 1997-05-13 | 1998-11-19 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a couche mince piezo-electrique |
JPH1188111A (ja) * | 1997-05-21 | 1999-03-30 | Nokia Mobile Phones Ltd | 結晶フィルター構造および薄膜バルク弾性波共振器を利用したフィルター |
JP2000030595A (ja) * | 1998-06-02 | 2000-01-28 | Nokia Mobile Phones Ltd | 共振器の構造 |
JP2000101386A (ja) * | 1998-09-11 | 2000-04-07 | Texas Instr Inc <Ti> | 集積型弾性波薄膜共振器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5864261A (en) * | 1994-05-23 | 1999-01-26 | Iowa State University Research Foundation | Multiple layer acoustical structures for thin-film resonator based circuits and systems |
US5821833A (en) * | 1995-12-26 | 1998-10-13 | Tfr Technologies, Inc. | Stacked crystal filter device and method of making |
US5873154A (en) | 1996-10-17 | 1999-02-23 | Nokia Mobile Phones Limited | Method for fabricating a resonator having an acoustic mirror |
US5872493A (en) * | 1997-03-13 | 1999-02-16 | Nokia Mobile Phones, Ltd. | Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror |
US6060818A (en) | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
FI113211B (fi) * | 1998-12-30 | 2004-03-15 | Nokia Corp | Balansoitu suodatinrakenne ja matkaviestinlaite |
-
2001
- 2001-01-02 US US09/753,214 patent/US6496085B2/en not_active Expired - Lifetime
- 2001-12-20 JP JP2001388031A patent/JP4248177B2/ja not_active Expired - Lifetime
- 2001-12-28 EP EP01310923A patent/EP1227582B8/en not_active Expired - Lifetime
- 2001-12-28 DE DE60134621T patent/DE60134621D1/de not_active Expired - Lifetime
- 2001-12-28 AT AT01310923T patent/ATE400084T1/de not_active IP Right Cessation
- 2001-12-31 CN CNB011395990A patent/CN1208898C/zh not_active Expired - Lifetime
-
2008
- 2008-10-17 JP JP2008268710A patent/JP4838292B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63177605A (ja) * | 1987-01-19 | 1988-07-21 | Toshiba Corp | 圧電薄膜共振子 |
JPS63187713A (ja) * | 1987-01-29 | 1988-08-03 | Toshiba Corp | 集積型圧電薄膜機能素子 |
JPH08186467A (ja) * | 1994-12-29 | 1996-07-16 | Murata Mfg Co Ltd | 拡がり振動型圧電振動子およびその製造方法 |
JPH10126160A (ja) * | 1996-10-02 | 1998-05-15 | Nokia Mobile Phones Ltd | 振幅変調および位相変調を行うための整調可能な薄膜バルク型音響共振器が組み込まれている装置 |
WO1998052280A1 (fr) * | 1997-05-13 | 1998-11-19 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a couche mince piezo-electrique |
JPH1188111A (ja) * | 1997-05-21 | 1999-03-30 | Nokia Mobile Phones Ltd | 結晶フィルター構造および薄膜バルク弾性波共振器を利用したフィルター |
JP2000030595A (ja) * | 1998-06-02 | 2000-01-28 | Nokia Mobile Phones Ltd | 共振器の構造 |
JP2000101386A (ja) * | 1998-09-11 | 2000-04-07 | Texas Instr Inc <Ti> | 集積型弾性波薄膜共振器 |
Also Published As
Publication number | Publication date |
---|---|
CN1208898C (zh) | 2005-06-29 |
US6496085B2 (en) | 2002-12-17 |
US20020084873A1 (en) | 2002-07-04 |
JP2002251190A (ja) | 2002-09-06 |
ATE400084T1 (de) | 2008-07-15 |
EP1227582A2 (en) | 2002-07-31 |
DE60134621D1 (de) | 2008-08-14 |
CN1365186A (zh) | 2002-08-21 |
EP1227582B8 (en) | 2008-08-13 |
JP4838292B2 (ja) | 2011-12-14 |
EP1227582B1 (en) | 2008-07-02 |
EP1227582A3 (en) | 2004-09-22 |
JP4248177B2 (ja) | 2009-04-02 |
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