JP2017147719A - 音響共振器及びその製造方法 - Google Patents
音響共振器及びその製造方法 Download PDFInfo
- Publication number
- JP2017147719A JP2017147719A JP2016188028A JP2016188028A JP2017147719A JP 2017147719 A JP2017147719 A JP 2017147719A JP 2016188028 A JP2016188028 A JP 2016188028A JP 2016188028 A JP2016188028 A JP 2016188028A JP 2017147719 A JP2017147719 A JP 2017147719A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- resonance
- frame
- acoustic resonator
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- -1 molybdenum (Mo) Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
2 基板
3 中空部
4 メンブレイン層
5 阻止層
10 共振部
11 第1の電極
12 圧電体
13 第2の電極
20 フレーム部
30 連結電極
Claims (14)
- 基板との間に中空部を形成し、音響波を発生させる共振部と、
前記共振部の少なくとも一つの電極に提供され、前記音響波を反射するフレーム部と、
前記フレーム部が提供される前記共振部の電極と外部電極とを連結するように提供され、前記フレーム部が形成された前記共振部の電極より厚さが薄く提供される連結電極と、
を含む音響共振器。 - 前記連結電極の厚さは、少なくとも前記フレーム部が提供される前記共振部の電極厚さの半分より小さく提供される、請求項1に記載の音響共振器。
- 前記連結電極の厚さは、少なくとも1,000Åより厚く提供される、請求項1または2に記載の音響共振器。
- 前記フレーム部は、前記中空部に対応する領域に対称的な形状で前記共振部の電極に提供される、請求項1から3のいずれか一項に記載の音響共振器。
- 前記フレーム部は、前記中空部に対応する領域の周り方向に連続するように連結して提供される、請求項1から4のいずれか一項に記載の音響共振器。
- 前記フレーム部は、突き出した形状で、前記中空部に対応する領域の周り方向に提供される、請求項1から5のいずれか一項に記載の音響共振器。
- 前記フレーム部は、前記フレーム部が提供される前記共振部の電極と異なる性質の素材で形成され、前記中空部に対応する領域の周り方向に提供される、請求項1から6のいずれか一項に記載の音響共振器。
- 前記フレーム部は、前記フレーム部が提供される前記共振部の電極と同じ素材で形成され、他の性質に改質して提供され、前記中空部に対応する領域の周り方向に提供される、請求項1から6のいずれか一項に記載の音響共振器。
- 前記共振部は、
前記基板との間に前記中空部を形成するように前記基板に提供される第1の電極と、
一面が前記第1の電極に接するように提供される圧電体と、
前記圧電体の他面に接するように提供され、前記フレーム部が提供される第2の電極と、
を含む、請求項1から8のいずれか一項に記載の音響共振器。 - 基板に共振部を形成し、前記基板と前記共振部との間の一部に犠牲層を形成する共振部の形成段階と、
前記共振部の少なくとも一つの電極にフレーム部を形成するフレーム部の形成段階と、
前記フレーム部が形成される前記共振部の電極と外部電極とを連結する連結電極を形成し、前記フレーム部が形成される前記共振部の電極より厚さを薄く形成する連結電極の形成段階と、
前記基板と前記共振部との間に形成された犠牲層を除去して中空部を形成する中空部の形成段階と、
を含む音響共振器の製造方法。 - 前記連結電極の形成段階は、
前記フレーム部が形成される前記共振部の電極の形成と同時に蒸着して連結層を形成し、前記連結層を前記フレーム部が形成される前記共振部の電極と連結して形成する連結層形成段階と、
前記連結層を前記フレーム部が形成される前記共振部の電極の厚さより薄くエッチングする厚さエッチング段階と、
を含む、請求項10に記載の音響共振器の製造方法。 - 前記連結電極の形成段階は、
前記フレーム部が形成され、前記中空部に対応する領域に形成される前記共振部の電極を覆うように蒸着し、前記外部電極と連結する領域まで一定の厚さで蒸着する、請求項10または11に記載の音響共振器の製造方法。 - 前記連結電極の形成段階は、
前記フレーム部が形成され、前記中空部に対応する領域に形成される前記共振部の電極に連結して蒸着し、前記フレーム部が形成される前記共振部の電極と異なる素材で形成される、請求項10から12のいずれか一項に記載の音響共振器の製造方法。 - 前記フレーム部の形成段階は、
前記フレーム部を対称的な形状で前記共振部の電極に形成する、請求項10から13のいずれか一項に記載の音響共振器の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160018322A KR101843244B1 (ko) | 2016-02-17 | 2016-02-17 | 음향 공진기 및 그 제조 방법 |
KR10-2016-0018322 | 2016-02-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017147719A true JP2017147719A (ja) | 2017-08-24 |
JP6388411B2 JP6388411B2 (ja) | 2018-09-12 |
Family
ID=59561821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016188028A Active JP6388411B2 (ja) | 2016-02-17 | 2016-09-27 | 音響共振器及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10790797B2 (ja) |
JP (1) | JP6388411B2 (ja) |
KR (1) | KR101843244B1 (ja) |
CN (1) | CN107094002B (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019201305A (ja) * | 2018-05-16 | 2019-11-21 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 音響共振器 |
WO2020161997A1 (ja) * | 2019-02-07 | 2020-08-13 | 国立研究開発法人産業技術総合研究所 | 窒化物圧電体およびそれを用いたmemsデバイス |
JP2020141337A (ja) * | 2019-02-28 | 2020-09-03 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
US10778179B2 (en) | 2017-03-23 | 2020-09-15 | Samsung Electro-Mechanics Co., Ltd. | Acoustic wave resonator |
US10790797B2 (en) | 2016-02-17 | 2020-09-29 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method of manufacturing the same |
JP2022507320A (ja) * | 2019-04-04 | 2022-01-18 | 中芯集成電路(寧波)有限公司上海分公司 | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム |
JP2023536552A (ja) * | 2020-09-25 | 2023-08-25 | 杭州星▲闔▼科技有限公司 | バルク音響共振器の製造プロセス及びバルク音響共振器 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10873316B2 (en) * | 2017-03-02 | 2020-12-22 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method of manufacturing the same |
US11563417B2 (en) * | 2017-11-20 | 2023-01-24 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator |
CN111786652B (zh) * | 2019-04-04 | 2022-05-10 | 中芯集成电路(宁波)有限公司上海分公司 | 体声波谐振器及其制造方法和滤波器、射频通信*** |
US12009803B2 (en) | 2019-04-04 | 2024-06-11 | Ningbo Semiconductor International Corporation | Bulk acoustic wave resonator, filter and radio frequency communication system |
KR20200143027A (ko) * | 2019-06-14 | 2020-12-23 | 삼성전기주식회사 | 체적 음향 공진기 |
CN110635775B (zh) * | 2019-09-10 | 2023-09-12 | 苏州汉天下电子有限公司 | 谐振器及其制造方法 |
CN111585537B (zh) * | 2020-06-05 | 2024-02-20 | 武汉衍熙微器件有限公司 | 谐振器及滤波器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008109414A (ja) * | 2006-10-25 | 2008-05-08 | Fujitsu Media Device Kk | 圧電薄膜共振器およびフィルタ |
JP2009200714A (ja) * | 2008-02-20 | 2009-09-03 | Fujitsu Ltd | 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置 |
WO2010095640A1 (ja) * | 2009-02-20 | 2010-08-26 | 宇部興産株式会社 | 薄膜圧電共振器およびそれを用いた薄膜圧電フィルタ |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7152289B2 (en) | 2002-09-25 | 2006-12-26 | Intel Corporation | Method for forming bulk resonators silicon <110> substrate |
US7388454B2 (en) | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
US7369013B2 (en) | 2005-04-06 | 2008-05-06 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using filled recessed region |
CN101217266B (zh) | 2008-01-09 | 2011-06-15 | 电子科技大学 | 一种体声波谐振器的制备方法 |
DE112009000947B4 (de) | 2008-04-24 | 2015-05-07 | Contria San Limited Liability Company | Volumenakustikwellenresonator |
US8248185B2 (en) | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
KR101099439B1 (ko) | 2009-10-16 | 2011-12-27 | 주식회사 엠에스솔루션 | 박막 벌크 음향 공진기 및 그 제조 방법 |
US9048812B2 (en) | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
US10367471B2 (en) * | 2015-05-21 | 2019-07-30 | Samsung Electro-Mechanics Co., Ltd. | Resonator package and method of manufacturing the same |
KR101843244B1 (ko) | 2016-02-17 | 2018-05-14 | 삼성전기주식회사 | 음향 공진기 및 그 제조 방법 |
KR20180017941A (ko) * | 2016-08-11 | 2018-02-21 | 삼성전기주식회사 | 탄성파 필터 장치 및 그 제조방법 |
-
2016
- 2016-02-17 KR KR1020160018322A patent/KR101843244B1/ko active IP Right Grant
- 2016-09-23 US US15/274,359 patent/US10790797B2/en active Active
- 2016-09-27 JP JP2016188028A patent/JP6388411B2/ja active Active
- 2016-10-20 CN CN201610915495.XA patent/CN107094002B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008109414A (ja) * | 2006-10-25 | 2008-05-08 | Fujitsu Media Device Kk | 圧電薄膜共振器およびフィルタ |
JP2009200714A (ja) * | 2008-02-20 | 2009-09-03 | Fujitsu Ltd | 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置 |
WO2010095640A1 (ja) * | 2009-02-20 | 2010-08-26 | 宇部興産株式会社 | 薄膜圧電共振器およびそれを用いた薄膜圧電フィルタ |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10790797B2 (en) | 2016-02-17 | 2020-09-29 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method of manufacturing the same |
US11595015B2 (en) | 2017-03-23 | 2023-02-28 | Samsung Electro-Mechanics Co., Ltd. | Acoustic wave resonator |
US10778179B2 (en) | 2017-03-23 | 2020-09-15 | Samsung Electro-Mechanics Co., Ltd. | Acoustic wave resonator |
US11323088B2 (en) | 2017-03-23 | 2022-05-03 | Samsung Electro-Mechanics Co., Ltd. | Acoustic wave resonator |
JP2019201305A (ja) * | 2018-05-16 | 2019-11-21 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 音響共振器 |
WO2020161997A1 (ja) * | 2019-02-07 | 2020-08-13 | 国立研究開発法人産業技術総合研究所 | 窒化物圧電体およびそれを用いたmemsデバイス |
JP2020129572A (ja) * | 2019-02-07 | 2020-08-27 | 国立研究開発法人産業技術総合研究所 | 窒化物圧電体およびそれを用いたmemsデバイス |
JP7097074B2 (ja) | 2019-02-07 | 2022-07-07 | 国立研究開発法人産業技術総合研究所 | 窒化物圧電体およびそれを用いたmemsデバイス |
JP2020141337A (ja) * | 2019-02-28 | 2020-09-03 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
JP7385996B2 (ja) | 2019-02-28 | 2023-11-24 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびマルチプレクサ |
JP2022507320A (ja) * | 2019-04-04 | 2022-01-18 | 中芯集成電路(寧波)有限公司上海分公司 | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム |
JP7199758B2 (ja) | 2019-04-04 | 2023-01-06 | 中芯集成電路(寧波)有限公司上海分公司 | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム |
JP2023536552A (ja) * | 2020-09-25 | 2023-08-25 | 杭州星▲闔▼科技有限公司 | バルク音響共振器の製造プロセス及びバルク音響共振器 |
JP7479655B2 (ja) | 2020-09-25 | 2024-05-09 | 杭州星▲闔▼科技有限公司 | バルク音響共振器の製造プロセス及びバルク音響共振器 |
Also Published As
Publication number | Publication date |
---|---|
CN107094002B (zh) | 2020-11-17 |
KR101843244B1 (ko) | 2018-05-14 |
KR20170096728A (ko) | 2017-08-25 |
US10790797B2 (en) | 2020-09-29 |
CN107094002A (zh) | 2017-08-25 |
US20170237409A1 (en) | 2017-08-17 |
JP6388411B2 (ja) | 2018-09-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6388411B2 (ja) | 音響共振器及びその製造方法 | |
JP6373418B2 (ja) | 音響共振器及びその製造方法 | |
KR101973423B1 (ko) | 음향 공진기 및 그 제조 방법 | |
CN107404304B (zh) | 声波谐振器及其制造方法 | |
US7939356B2 (en) | Method of manufacturing film bulk acoustic resonator using internal stress of metallic film and resonator manufactured thereby | |
JP4685832B2 (ja) | 共振器およびその製造方法 | |
JP4903636B2 (ja) | 共振器、それを備えた装置、および共振器の製造方法 | |
KR101973416B1 (ko) | 음향 공진기 및 음향 공진기의 제조 방법 | |
JP6371518B2 (ja) | 圧電薄膜共振器およびその製造方法、フィルタ並びにデュプレクサ | |
KR20160086552A (ko) | 음향 공진기 및 그 제조 방법 | |
KR20170073063A (ko) | 음향 공진기 및 그 제조 방법 | |
JP6333540B2 (ja) | 圧電薄膜共振子、フィルタ、及び分波器 | |
CN108631742B (zh) | 声波谐振器及其制造方法 | |
JP2005333642A (ja) | エアギャップ型の薄膜バルク音響共振器およびその製造方法 | |
KR20050034052A (ko) | 박막 벌크 음향 공진기 및 그 제조방법 | |
KR20170097348A (ko) | 음향 공진기 및 그 제조 방법 | |
KR20180006248A (ko) | 음향 공진기 및 그 제조 방법 | |
JP4520415B2 (ja) | 圧電薄膜共振器及びその製作方法 | |
CN107093993B (zh) | 声波谐振器模块及其制造方法 | |
KR20180131313A (ko) | 음향 공진기 및 그의 제조 방법 | |
KR20180131314A (ko) | 음향 공진기 및 그의 제조 방법 | |
CN111030631B (zh) | 声波器件的制作方法及声波器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20171115 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180222 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180717 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180810 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6388411 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |