JP2008181138A - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP2008181138A JP2008181138A JP2008026814A JP2008026814A JP2008181138A JP 2008181138 A JP2008181138 A JP 2008181138A JP 2008026814 A JP2008026814 A JP 2008026814A JP 2008026814 A JP2008026814 A JP 2008026814A JP 2008181138 A JP2008181138 A JP 2008181138A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- electrode
- film
- insulating film
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 170
- 239000000463 material Substances 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 7
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- 239000002245 particle Substances 0.000 claims description 5
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- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 286
- 239000000758 substrate Substances 0.000 abstract description 91
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 22
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
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- -1 and for example Substances 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 239000000969 carrier Substances 0.000 description 2
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- 229910052804 chromium Inorganic materials 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
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- 229910004529 TaF 5 Inorganic materials 0.000 description 1
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
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- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
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- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
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- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
- G02F1/133784—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by rubbing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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Abstract
【解決手段】画素部、駆動回路、および外部入力端子を有する表示装置を有する表示装置において、前記画素部と前記駆動回路部は、半導体膜と、ゲート電極と、前記ゲート電極上に形成された絶縁膜、および前記絶縁膜上に前記半導体膜と電気的に接続された電極を有するTFTを有し、前記外部入力端子は、前記ゲート電極と同じ層に形成された第1の配線と、前記電極と同じ層に形成され、前記絶縁膜に形成されたコンタクトホールを介し前記第1の配線と接続された第2の配線と、前記第2の配線に接続され、前記第2の配線上に形成された透明導電膜と、前記第2の配線と前記透明導電膜が接続している位置で前記透明導電膜と接続するフレキシブルプリント配線板を有する表示装置。
【選択図】図9
Description
絶縁表面上にソース領域及びドレイン領域と、前記ソース領域と前記ドレイン領域との間に挟まれるチャネル形成領域とを有する半導体層(第1の半導体層172)と、
前記半導体層(第1の半導体層172)上に第1絶縁膜と、
前記第1絶縁膜上に前記チャネル形成領域と重なる電極(ゲート電極を含む第1の電極134)と、
前記第1絶縁膜上にソース配線と、
前記電極(ゲート電極を含む第1の電極134)及び前記ソース配線を覆う第2絶縁膜と、
前記第2絶縁膜上に前記電極(ゲート電極を含む第1の電極134)と接続されたゲート配線166とを有する半導体装置である。
絶縁表面上にソース領域及びドレイン領域と、前記ソース領域と前記ドレイン領域との間に挟まれるチャネル形成領域とを有する半導体層(第1の半導体層172)と、
前記半導体層(第1の半導体層172)上に第1絶縁膜と、
前記第1絶縁膜上に前記チャネル形成領域と重なる電極(ゲート電極を含む第1の電極134)と、
前記第1絶縁膜上にソース配線と、
前記電極及び前記ソース配線を覆う第2絶縁膜と、
前記第2絶縁膜上に前記電極と接続されたゲート配線と、
前記第2絶縁膜上に前記ソース配線及び前記半導体層(具体的にはソース領域またはドレイン領域)と接続された接続電極165と、
前記第2絶縁膜上に前記半導体層(具体的にはドレイン領域またはドレイン領域)と接続された画素電極167とを有する半導体装置である。
絶縁表面上に形成された半導体層と、該半導体層上に形成された絶縁膜と、該絶縁膜上に形成されたゲート電極とを含むTFTを備えた半導体装置において、
前記ゲート電極は、端部がテーパー形状である第1の導電層を下層とし、前記第1の導電層より狭い幅を有する第2の導電層を上層とし、
前記半導体層は、前記絶縁膜を間に挟んで前記第2の導電層と重なるチャネル形成領域と、該チャネル形成領域と接して形成された第3の不純物領域と、該第3の不純物領域と接して形成された第2の不純物領域と、該第2の不純物領域と接して形成された第1の不純物領域とを含むことを特徴とする半導体装置である。
は、前記第2の導電層の側斜面が水平面となす角度より小さい。また、本明細書中では便宜上、テーパー角を有している側斜面をテーパー形状と呼び、テーパー形状を有している部分をテーパー部と呼ぶ。
一対の基板と、前記一対の基板間に保持された液晶とを備えた液晶表示装置であって、 前記一対の基板のうち、一方の基板には画素部と駆動回路とが設けられ、
前記画素部には、
絶縁表面上にソース領域及びドレイン領域と、前記ソース領域と前記ドレイン領域との間に挟まれるチャネル形成領域とを有する半導体層と、
前記半導体層上に第1絶縁膜と、
前記第1絶縁膜上に前記チャネル形成領域と重なる電極と、
前記第1絶縁膜上にソース配線と、
前記電極及び前記ソース配線を覆う第2絶縁膜と、
前記第2絶縁膜上に前記電極と接続されたゲート配線と、
前記第2絶縁膜上に前記ソース配線及び前記半導体層と接続された接続電極165と、
前記第2絶縁膜上に前記半導体層と接続された画素電極167とを備え、
他方の基板には、前記第1の半導体層と重なるように赤色カラーフィルタと青色カラーフィルタとが積層された遮光膜を有することを特徴とする半導体装置である。
ゲート配線166は、ゲート電極134と異なった絶縁膜上に形成されており、さらに前記ゲート電極134とソース配線137が第1の絶縁膜上に形成され、前記ゲート配線166と画素電極167は前記第1の絶縁膜とは異なる第2の絶縁膜上に形成されていることを特徴とする半導体装置である。
絶縁表面上に結晶質半導体膜からなる半導体層を形成する第1工程と、
前記半導体層上に第1絶縁膜を形成する第2工程と、
前記第1絶縁膜上に前記半導体層と重なる電極と、ソース配線とを形成する第3工程と、
前記電極及び前記ソース配線を覆う第2絶縁膜を形成する第4工程と、
前記第2絶縁膜上に前記電極と接続し、且つ前記半導体層と重なるゲート配線と、前記半導体層と前記ソース配線とを接続する接続電極と、前記ソース配線と重なる画素電極とを形成する第5工程とを有することを特徴とする半導体装置の作製方法である。
絶縁表面上に結晶質半導体膜からなる第1の半導体層172及び第2の半導体層173を形成する第1工程と、
前記第1の半導体層及び前記第2の半導体層上に第1絶縁膜を形成する第2工程と、
前記第1絶縁膜上に前記第1の半導体層と重なる第1の電極134と、前記第2の半導体層と重なる第2の電極135と、ソース配線137とを形成する第3工程と、
前記第1の電極134、前記第2の電極135、及び前記ソース配線137を覆う第2絶縁膜を形成する第4工程と、
前記第2絶縁膜上に前記第1の電極134と接続し、且つ第1の半導体層と重なるゲート配線166と、前記第1の半導体層と前記ソース配線とを接続する接続電極165と、前記ソース配線と重なる画素電極167とを形成する第5工程とを有することを特徴とする半導体装置の作製方法である。
また、図1の構造はマルチゲート構造となっているため一つの半導体層には、複数のチャネル形成領域が存在している。従って、あるチャネル形成領域とその他のチャネル形成領域との間に存在する領域もゲート配線166によって遮光することが望ましい。
の厚さで形成する。結晶質半導体膜の材料に限定はないが、好ましくはシリコンまたはシリコンゲルマニウム(SiGe)合金などで形成すると良い。
そして幅100〜1000μm、例えば400μmで線状に集光したレーザー光を基板全面に渡って照射し、この時の線状レーザー光の重ね合わせ率(オーバーラップ率)を80〜98%として行う。
ゲート絶縁膜107はプラズマCVD法またはスパッタ法を用い、厚さを40〜150nmとしてシリコンを含む絶縁膜で形成する。本実施例では、120nmの厚さで酸化窒化シリコン膜で形成する。勿論、ゲート絶縁膜はこのような酸化窒化シリコン膜に限定されるものでなく、他のシリコンを含む絶縁膜を単層または積層構造として用いても良い。例えば、酸化シリコン膜を用いる場合には、プラズマCVD法でTEOS(Tetraethyl Orthosilicate)とO2とを混合し、反応圧力40Pa、基板温度300〜400℃とし、高周波(13.56MHz)電力密度0.5〜0.8W/cm2で放電させて形成することができる。このようにして作製される酸化シリコン膜は、その後400〜500℃の熱アニールによりゲート絶縁膜として良好な特性を得ることができる。
ゲート絶縁膜上に残渣を残すことなくエッチングするためには、10〜20%程度の割合でエッチング時間を増加させると良い。W膜に対する酸化窒化シリコン膜の選択比は2〜4(代表的には3)であるので、オーバーエッチング処理により、酸化窒化シリコン膜が露出した面は20〜50nm程度エッチングされることになる。こうして、第1のエッチング処理により第1の導電層と第2の導電層から成る第1の形状の導電層118〜124(第1の導電層118a〜124aと第2の導電層118b〜124b)を形成する。117はゲート絶縁膜であり、第1の形状の導電層118〜124で覆われない領域は20〜50nm程度エッチングされ薄くなった領域が形成される。
(図2(B))ドーピングの方法はイオンドープ法若しくはイオン注入法で行えば良い。イオンドープ法の条件はドーズ量を1×1013〜5×1014atoms/cm2とし、加速電圧を60〜100keVとして行う。n型を付与する不純物元素として15族に属する元素、典型的にはリン(P)または砒素(As)を用いるが、ここではリン(P)を用いる。この場合、導電層118〜122がn型を付与する不純物元素に対するマスクとなり、自己整合的に第1の不純物領域125〜129が形成される。第1の不純物領域125〜129には1×1020〜1×1021atomic/cm3の濃度範囲でn型を付与する不純物元素を添加する。
なお、画素電極とコモン配線は、基板面と平行な電界が生じるように配置されている。また、画素電極1211は透光性を有する導電膜(ITO膜等)を用いており、マスクを1枚増やして透光性を有する導電膜をパターニングして、第2の接続電極と画素電極とを重ねあわせて電気的な接続を可能としている。画素電極として透光性を有する導電膜を用いることによって開口率を向上させている。また、コモン配線はソース配線と重なるように配置されており画素部の開口率を向上させている。
本発明は表示部2402に適用することができる。
Claims (13)
- 画素部、駆動回路部、および外部入力端子を有する表示装置であって、
前記画素部と前記駆動回路部は、半導体膜と、ゲート電極と、前記ゲート電極上に形成された絶縁膜、および前記絶縁膜上に前記半導体膜と電気的に接続された電極を有するTFTを有し、
前記外部入力端子は、
前記ゲート電極と同じ層に形成された第1の配線と、
前記電極と同じ層に形成され、前記絶縁膜に形成されたコンタクトホールを介し前記第1の配線と接続された第2の配線と、
前記第2の配線に接続され、前記第2の配線上に形成された透明導電膜と、
前記第2の配線と前記透明導電膜が接続している位置で前記透明導電膜と接続するフレキシブルプリント配線板を有することを特徴とする表示装置。 - 画素部、駆動回路部、および外部入力端子を有する表示装置であって、
前記画素部と前記駆動回路部は、半導体膜と、ゲート電極と、前記ゲート電極上に形成された絶縁膜と、および前記絶縁膜上に前記半導体膜と電気的に接続された電極を有するTFTと前記電極に電気的に接続された画素電極を有し、
前記外部入力端子は、
前記ゲート電極と同じ層に形成された第1の配線と、
前記電極と同じ層に形成され、前記絶縁膜に形成されたコンタクトホールを介し前記第1の配線と接続された第2の配線と、
前記第2の配線に接続され、前記第2の配線上に形成された透明導電膜と、
前記第2の配線と前記透明導電膜が接続している位置で前記透明導電膜と接続するフレキシブルプリント配線板を有することを特徴とする表示装置。 - 画素部、駆動回路部、および外部入力端子を有する表示装置であって、
前記画素部と前記駆動回路部は、半導体膜と、ゲート電極と、前記ゲート電極上に形成された絶縁膜、および前記絶縁膜上に前記半導体膜と電気的に接続された電極を有するTFTを有し、
前記外部入力端子は、
前記ゲート電極と同じ層に形成された第1の配線と、
前記電極と同じ層に形成され、前記絶縁膜に形成されたコンタクトホールを介し前記第1の配線と接続された第2の配線と、
前記第2の配線に接続され、前記第2の配線上に形成された透明導電膜と、
前記第2の配線と前記透明導電膜が接続している位置で前記透明導電膜と導電性粒子を通して接続するフレキシブルプリント配線板を有することを特徴とする表示装置。 - 画素部、駆動回路部、および外部入力端子を有する表示装置であって、
前記画素部と前記駆動回路部は、半導体膜と、ゲート電極と、前記ゲート電極上に形成された絶縁膜と、および前記絶縁膜上に前記半導体膜と電気的に接続された電極を有するTFTと前記電極に電気的に接続された画素電極を有し、
前記外部入力端子は、
前記ゲート電極と同じ層に形成された第1の配線と、
前記電極と同じ層に形成され、前記絶縁膜に形成されたコンタクトホールを介し前記第1の配線と接続された第2の配線と、
前記第2の配線に接続され、前記第2の配線上に形成された透明導電膜と、
前記第2の配線と前記透明導電膜が接続している位置で前記透明導電膜と導電性粒子を通して接続するフレキシブルプリント配線板を有することを特徴とする表示装置。 - 請求項1乃至請求項4のいずれか一項において、
前記画素部はゲート配線と垂直な方向に延在する前記ゲート電極と同じ材料で、かつ前記ゲート電極と同じ層に形成された配線を有することを特徴とする表示装置。 - 請求項5において、
前記配線はソース配線であることを特徴とする表示装置。 - 請求項5または請求項6において、
前記ゲート配線は前記電極と同じ層に形成されていることを特徴とする表示装置。 - 請求項1乃至請求項7のいずれか一項において、
前記フレキシブルプリント配線板は、ベースフィルムと配線からなることを特徴とする表示装置。 - 請求項1乃至請求項8のいずれか一項において、
前記透明導電膜は、酸化インジウム、酸化インジウム酸化スズ合金、または酸化インジウム酸化亜鉛合金からなることを特徴とする表示装置。 - 請求項1乃至請求項9のいずれか一項において、
前記ゲート電極は前記半導体膜上に形成されていることを特徴とする表示装置。 - 請求項1乃至請求項10のいずれか一項において、
前記半導体膜は、多結晶シリコン膜であることを特徴とする表示装置。 - 請求項1乃至請求項11のいずれか一項において、
前記電極および前記第2の配線はTiとAlとTiの積層構造からなることを特徴とする表示装置。 - 請求項1乃至請求項12のいずれか一項において、
前記表示装置は、パーソナルコンピュータ、ビデオカメラ、モバイルコンピュータ、DVDプレイヤー、デジタルカメラ、プロジェクターに用いられることを特徴とする表示装置。
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