JP2007042741A - 電子部品実装構造体及びその製造方法 - Google Patents
電子部品実装構造体及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 129
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 125
- 239000010703 silicon Substances 0.000 claims abstract description 125
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000007789 sealing Methods 0.000 claims abstract description 67
- 239000011521 glass Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000007747 plating Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000003384 imaging method Methods 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims 2
- 150000003376 silicon Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 77
- 235000012431 wafers Nutrition 0.000 description 46
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000010931 gold Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- JHJNPOSPVGRIAN-SFHVURJKSA-N n-[3-[(1s)-1-[[6-(3,4-dimethoxyphenyl)pyrazin-2-yl]amino]ethyl]phenyl]-5-methylpyridine-3-carboxamide Chemical compound C1=C(OC)C(OC)=CC=C1C1=CN=CC(N[C@@H](C)C=2C=C(NC(=O)C=3C=C(C)C=NC=3)C=CC=2)=N1 JHJNPOSPVGRIAN-SFHVURJKSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/096—Feed-through, via through the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
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Abstract
【解決手段】 両面側の配線層32,26が貫通電極16を介して相互接続された構造を有するシリコン回路基板1の上に、電子部品40が実装又は形成され、ガラスよりなるリング状の突起状接合部50bとそれによってキャビティ50aが構成された構造の封止キャップ50xの突起状接合部50bがシリコン回路基板1の接合部10bに陽極接合されている。これによって、電子部品40が封止キャップ50xのキャビティ50a内に気密封止されている。
【選択図】 図5
Description
前記電子部品が前記封止キャップのキャビティ内に気密封止されていることを特徴とする。
図1〜図4は本発明の第1実施形態の電子部品実装構造体の製造方法を示す断面図、図5は同じく電子部品実装構造体を示す断面図である。まず、図1(a)に示すように、シリコン基板として厚みが625μm程度のシリコンウェハ10を用意し、続いて図1(b)に示すように、BG(バックグラインダー)によってシリコンウェハ10の一方の面を研削することにより、50〜300μm(好適には200μm程度)の厚みに薄型化されたシリコンウェハ10を得る。シリコンウェハ10には複数の素子搭載領域(又は素子形成領域)が画定されており、後工程で分割されて個々の電子部品実装構造体が得られる。
図7は本発明の第2実施形態の電子部品実装構造体を示す断面図である。第2実施形態では、電子部品としてCMOSセンサなどの撮像素子がシリコン回路基板に実装され、封止キャップによって同様に気密封止される。第2実施形態では、第1実施形態と同一要素には同一符号を付してその詳しい説明を省略する。
図8は本発明の第3実施形態の電子部品実装構造体を示す断面図である。
Claims (10)
- 両面側の配線層が貫通電極を介して相互接続された構造を有するシリコン回路基板と、
前記シリコン回路基板の上に実装又は形成された電子部品と、
少なくとも接合部分がガラスよりなるリング状の突起状接合部を備え、前記突起状接合部によってキャビティが構成された構造の封止キャップであって、前記封止キャップの前記突起状接合部が前記シリコン回路基板の接合部に接合された前記封止キャップとを有し、
前記電子部品が前記封止キャップのキャビティ内に気密封止されていることを特徴とする電子部品実装構造体。 - 前記封止キャップは、全体がガラスからなることを特徴とする請求項1に記載の電子部品実装構造体。
- 前記封止キャップは、前記キャビティが設けられたシリコン部と、該シリコン部のキャビティが設けられた面側に設けられたガラス部とによって構成されることを特徴とする請求項1に記載の電子部品実装構造体。
- 前記電子部品は、前記配線層に電気的に接続されて実装された半導体素子又は撮像素子であることを特徴とする請求項1に記載の電子部品実装構造体。
- 前記電子部品は、前記シリコン回路基板に作り込まれたMEMS素子であることを特徴とする請求項1に記載の電子部品実装構造体。
- 前記電子部品は、前記配線層にフリップチップ接続された前記半導体素子であり、前記半導体素子と前記シリコン回路基板との間は、樹脂が充填されておらず空洞になっていることを特徴とする請求項4に記載の電子部品実装構造体。
- 両面側の配線層が貫通電極を介して相互接続された構造を有し、電子部品が実装又は形成されたシリコン回路基板と、少なくとも接合部分がガラスよりなるリング状の突起状接合部を備え、前記突起状接合部によってキャビティが構成された構造の封止キャップとを用意する工程と、
前記封止キャップの前記突起状接合部を、前記シリコン回路基板の前記電子部品の外側に設けられた接続部に陽極接合することにより、前記電子部品を前記封止キャップの前記キャビティ内に気密封止する工程とを有することを特徴とする電子部品実装構造体の製造方法。 - 前記両面側の配線層が貫通電極を介して相互接続された構造を有するシリコン回路基板の製造方法は、
シリコン基板にスルーホールを形成する工程と、
前記シリコン基板の両面及び前記スルーホールの内面に絶縁層を形成する工程と、
前記シリコン基板をめっき給電層の上に配置し、電解めっきによって前記スルーホール内に前記貫通電極を形成する工程と、
前記めっき給電層を除去する工程と、
前記シリコン基板の両面側に、前記貫通電極を介して相互接続される前記配線層をそれぞれ形成する工程とを含むことを特徴とする請求項7に記載の電子部品実装構造体の製造方法。 - 前記封止キャップは、全体がガラスからなることを特徴とする請求項7又は8に記載の電子部品実装構造体の製造方法。
- 前記封止キャップは、キャビティが設けられたシリコン部と、該シリコン部のキャビティが設けられた面側に設けられたガラス部とによって構成されることを特徴とする請求項7又は8に記載の電子部品実装構造体の製造方法。
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JP2005222973A JP4889974B2 (ja) | 2005-08-01 | 2005-08-01 | 電子部品実装構造体及びその製造方法 |
TW095125040A TW200742011A (en) | 2005-08-01 | 2006-07-10 | Electronic parts packaging structure and method of manufacturing the same |
EP06253650A EP1749794A3 (en) | 2005-08-01 | 2006-07-12 | Electronic parts packaging structure and method of manufacturing the same |
US11/485,397 US7656023B2 (en) | 2005-08-01 | 2006-07-13 | Electronic parts packaging structure and method of manufacturing the same |
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Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007214439A (ja) * | 2006-02-10 | 2007-08-23 | Dainippon Printing Co Ltd | 複合センサーパッケージ |
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EP1749794A2 (en) | 2007-02-07 |
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JP4889974B2 (ja) | 2012-03-07 |
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US7656023B2 (en) | 2010-02-02 |
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