TW200742011A - Electronic parts packaging structure and method of manufacturing the same - Google Patents

Electronic parts packaging structure and method of manufacturing the same

Info

Publication number
TW200742011A
TW200742011A TW095125040A TW95125040A TW200742011A TW 200742011 A TW200742011 A TW 200742011A TW 095125040 A TW095125040 A TW 095125040A TW 95125040 A TW95125040 A TW 95125040A TW 200742011 A TW200742011 A TW 200742011A
Authority
TW
Taiwan
Prior art keywords
electronic parts
packaging structure
manufacturing
same
bonding portion
Prior art date
Application number
TW095125040A
Other languages
English (en)
Inventor
Masahiro Sunohara
Mitsutoshi Higashi
Akinori Shiraishi
Original Assignee
Shinko Electric Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Ind Co filed Critical Shinko Electric Ind Co
Publication of TW200742011A publication Critical patent/TW200742011A/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/094—Feed-through, via
    • B81B2207/096—Feed-through, via through the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095125040A 2005-08-01 2006-07-10 Electronic parts packaging structure and method of manufacturing the same TW200742011A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005222973A JP4889974B2 (ja) 2005-08-01 2005-08-01 電子部品実装構造体及びその製造方法

Publications (1)

Publication Number Publication Date
TW200742011A true TW200742011A (en) 2007-11-01

Family

ID=37434015

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125040A TW200742011A (en) 2005-08-01 2006-07-10 Electronic parts packaging structure and method of manufacturing the same

Country Status (4)

Country Link
US (1) US7656023B2 (zh)
EP (1) EP1749794A3 (zh)
JP (1) JP4889974B2 (zh)
TW (1) TW200742011A (zh)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4703424B2 (ja) * 2006-02-10 2011-06-15 大日本印刷株式会社 複合センサーパッケージ
WO2007147137A2 (en) 2006-06-15 2007-12-21 Sitime Corporation Stacked die package for mems resonator system
US7486525B2 (en) * 2006-08-04 2009-02-03 International Business Machines Corporation Temporary chip attach carrier
US7675162B2 (en) * 2006-10-03 2010-03-09 Innovative Micro Technology Interconnect structure using through wafer vias and method of fabrication
WO2008079887A2 (en) 2006-12-21 2008-07-03 Analog Devices, Inc. Stacked mems device
JP5281252B2 (ja) * 2007-03-05 2013-09-04 新光電気工業株式会社 照度検出装置
US7802846B2 (en) * 2007-03-19 2010-09-28 Pierre Bellefleur Reclining chair and chassis, frame and kit therefor
US7528420B2 (en) * 2007-05-23 2009-05-05 Visera Technologies Company Limited Image sensing devices and methods for fabricating the same
US7820543B2 (en) * 2007-05-29 2010-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced copper posts for wafer level chip scale packaging
JP5137059B2 (ja) * 2007-06-20 2013-02-06 新光電気工業株式会社 電子部品用パッケージ及びその製造方法と電子部品装置
JP4750080B2 (ja) 2007-06-22 2011-08-17 新光電気工業株式会社 配線基板
JP2009010261A (ja) * 2007-06-29 2009-01-15 Fujikura Ltd 半導体パッケージおよびその製造方法
US9231012B2 (en) * 2007-08-01 2016-01-05 Visera Technologies Company Limited Image sensor package
TWI368978B (en) * 2007-09-21 2012-07-21 Unimicron Technology Corp Method for fabricating ball-implantation side surface structure of package substrate
JP4961617B2 (ja) 2007-10-01 2012-06-27 新光電気工業株式会社 配線基板とその製造方法及び半導体装置
US20090102050A1 (en) * 2007-10-17 2009-04-23 Phoenix Precision Technology Corporation Solder ball disposing surface structure of package substrate
JP5171210B2 (ja) * 2007-10-31 2013-03-27 京セラクリスタルデバイス株式会社 圧電振動子の製造方法
US8492263B2 (en) * 2007-11-16 2013-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Protected solder ball joints in wafer level chip-scale packaging
DE102007058951B4 (de) * 2007-12-07 2020-03-26 Snaptrack, Inc. MEMS Package
DE102007060632A1 (de) * 2007-12-17 2009-06-18 Robert Bosch Gmbh Verfahren zum Herstellen eines Kappenwafers für einen Sensor
US20090194829A1 (en) * 2008-01-31 2009-08-06 Shine Chung MEMS Packaging Including Integrated Circuit Dies
JP5232511B2 (ja) * 2008-03-24 2013-07-10 株式会社アドバンテスト 基板加工方法
JP4766143B2 (ja) * 2008-09-15 2011-09-07 株式会社デンソー 半導体装置およびその製造方法
US7851925B2 (en) * 2008-09-19 2010-12-14 Infineon Technologies Ag Wafer level packaged MEMS integrated circuit
DE102009000389A1 (de) * 2009-01-23 2010-07-29 Robert Bosch Gmbh Integrierter Schaltkreis und Herstellungsverfahren hierfür
TWI387084B (zh) * 2009-01-23 2013-02-21 Advanced Semiconductor Eng 具有穿導孔之基板及具有穿導孔之基板之封裝結構
JP5302020B2 (ja) * 2009-01-26 2013-10-02 浜松ホトニクス株式会社 光モジュール
JP5572979B2 (ja) * 2009-03-30 2014-08-20 ソニー株式会社 半導体装置の製造方法
JP5421690B2 (ja) * 2009-08-12 2014-02-19 セイコーインスツル株式会社 パッケージの製造方法
US8390083B2 (en) 2009-09-04 2013-03-05 Analog Devices, Inc. System with recessed sensing or processing elements
TWI392069B (zh) * 2009-11-24 2013-04-01 Advanced Semiconductor Eng 封裝結構及其封裝製程
KR101084246B1 (ko) * 2009-12-28 2011-11-16 삼성모바일디스플레이주식회사 유기 발광 조명 장치
US8299616B2 (en) * 2010-01-29 2012-10-30 Taiwan Semiconductor Manufacturing Company, Ltd. T-shaped post for semiconductor devices
US20110195223A1 (en) * 2010-02-11 2011-08-11 Qualcomm Incorporated Asymmetric Front/Back Solder Mask
US8318596B2 (en) 2010-02-11 2012-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Pillar structure having a non-planar surface for semiconductor devices
US8803319B2 (en) 2010-02-11 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Pillar structure having a non-planar surface for semiconductor devices
JP5554092B2 (ja) * 2010-03-05 2014-07-23 セイコーインスツル株式会社 電子デバイスパッケージの製造方法
JP5385452B2 (ja) * 2010-03-09 2014-01-08 パナソニック株式会社 半導体装置の製造方法
KR101028329B1 (ko) * 2010-04-28 2011-04-12 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
US20110294237A1 (en) * 2010-05-27 2011-12-01 MOS Art Pack Corporation Packaging method of semiconductor device
US8241963B2 (en) 2010-07-13 2012-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Recessed pillar structure
JP5729932B2 (ja) * 2010-07-22 2015-06-03 キヤノン株式会社 基板貫通孔内への金属充填方法
TWI446420B (zh) 2010-08-27 2014-07-21 Advanced Semiconductor Eng 用於半導體製程之載體分離方法
TWI445152B (zh) 2010-08-30 2014-07-11 Advanced Semiconductor Eng 半導體結構及其製作方法
US9007273B2 (en) 2010-09-09 2015-04-14 Advances Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
TWI434387B (zh) 2010-10-11 2014-04-11 Advanced Semiconductor Eng 具有穿導孔之半導體裝置及具有穿導孔之半導體裝置之封裝結構及其製造方法
WO2012051340A1 (en) 2010-10-12 2012-04-19 Analog Devices, Inc. Microphone package with embedded asic
TWI527174B (zh) 2010-11-19 2016-03-21 日月光半導體製造股份有限公司 具有半導體元件之封裝結構
TWI445155B (zh) 2011-01-06 2014-07-11 Advanced Semiconductor Eng 堆疊式封裝結構及其製造方法
US8853819B2 (en) 2011-01-07 2014-10-07 Advanced Semiconductor Engineering, Inc. Semiconductor structure with passive element network and manufacturing method thereof
EP2481703B1 (en) * 2011-01-27 2020-07-01 Sensirion AG Sensor protection
JP5970744B2 (ja) * 2011-01-28 2016-08-17 株式会社大真空 電子部品パッケージ用封止部材、電子部品パッケージ、及び電子部品パッケージ用封止部材の製造方法
US8975517B2 (en) * 2011-03-18 2015-03-10 Daishinku Corporation Electronic component package, electronic component, and electronic component package manufacturing method
CN103503175B (zh) 2011-05-06 2016-05-25 欧司朗光电半导体有限公司 具有分隔器件载体区域的沟槽结构的器件载体复合结构与用于制造多个器件载体区域的方法
JP5779030B2 (ja) * 2011-07-28 2015-09-16 セイコーインスツル株式会社 電子デバイス、発振器及び電子デバイスの製造方法
US8541883B2 (en) 2011-11-29 2013-09-24 Advanced Semiconductor Engineering, Inc. Semiconductor device having shielded conductive vias
FR2985855B1 (fr) * 2012-01-17 2014-11-21 Soc Fr Detecteurs Infrarouges Sofradir Procede pour la realisation de traversees electriques etanches au travers d'un boitier d'encapsulation et boitier d'encapsulation muni d'au moins l'une de ces traversees electriques
US8975157B2 (en) 2012-02-08 2015-03-10 Advanced Semiconductor Engineering, Inc. Carrier bonding and detaching processes for a semiconductor wafer
US9230932B2 (en) 2012-02-09 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect crack arrestor structure and methods
US8963316B2 (en) 2012-02-15 2015-02-24 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
US9515036B2 (en) 2012-04-20 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for solder connections
US8786060B2 (en) 2012-05-04 2014-07-22 Advanced Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
JP2012216868A (ja) * 2012-07-10 2012-11-08 Shinko Electric Ind Co Ltd 電子部品用パッケージ及び電子部品装置
US9153542B2 (en) 2012-08-01 2015-10-06 Advanced Semiconductor Engineering, Inc. Semiconductor package having an antenna and manufacturing method thereof
US8937387B2 (en) 2012-11-07 2015-01-20 Advanced Semiconductor Engineering, Inc. Semiconductor device with conductive vias
US8952542B2 (en) 2012-11-14 2015-02-10 Advanced Semiconductor Engineering, Inc. Method for dicing a semiconductor wafer having through silicon vias and resultant structures
US9406552B2 (en) 2012-12-20 2016-08-02 Advanced Semiconductor Engineering, Inc. Semiconductor device having conductive via and manufacturing process
US8841751B2 (en) 2013-01-23 2014-09-23 Advanced Semiconductor Engineering, Inc. Through silicon vias for semiconductor devices and manufacturing method thereof
US9978688B2 (en) 2013-02-28 2018-05-22 Advanced Semiconductor Engineering, Inc. Semiconductor package having a waveguide antenna and manufacturing method thereof
US9089268B2 (en) 2013-03-13 2015-07-28 Advanced Semiconductor Engineering, Inc. Neural sensing device and method for making the same
US9173583B2 (en) 2013-03-15 2015-11-03 Advanced Semiconductor Engineering, Inc. Neural sensing device and method for making the same
US8987734B2 (en) 2013-03-15 2015-03-24 Advanced Semiconductor Engineering, Inc. Semiconductor wafer, semiconductor process and semiconductor package
US9847462B2 (en) 2013-10-29 2017-12-19 Point Engineering Co., Ltd. Array substrate for mounting chip and method for manufacturing the same
US9355997B2 (en) 2014-03-12 2016-05-31 Invensas Corporation Integrated circuit assemblies with reinforcement frames, and methods of manufacture
US20150262902A1 (en) 2014-03-12 2015-09-17 Invensas Corporation Integrated circuits protected by substrates with cavities, and methods of manufacture
JP6294113B2 (ja) * 2014-03-17 2018-03-14 新光電気工業株式会社 キャップ及びその製造方法、半導体装置及びその製造方法
JP2017520906A (ja) * 2014-04-30 2017-07-27 コーニング インコーポレイテッド 貫通ガラスバイアの作製のための接合材料のエッチバックプロセス
US9165793B1 (en) 2014-05-02 2015-10-20 Invensas Corporation Making electrical components in handle wafers of integrated circuit packages
KR20150131769A (ko) * 2014-05-16 2015-11-25 삼성전기주식회사 압전 패키지
US9741649B2 (en) 2014-06-04 2017-08-22 Invensas Corporation Integrated interposer solutions for 2D and 3D IC packaging
US9412806B2 (en) 2014-06-13 2016-08-09 Invensas Corporation Making multilayer 3D capacitors using arrays of upstanding rods or ridges
US9252127B1 (en) 2014-07-10 2016-02-02 Invensas Corporation Microelectronic assemblies with integrated circuits and interposers with cavities, and methods of manufacture
US9666730B2 (en) 2014-08-18 2017-05-30 Optiz, Inc. Wire bond sensor package
JP6256301B2 (ja) * 2014-10-31 2018-01-10 株式会社デンソー 電子回路部品
JP6465666B2 (ja) * 2015-01-22 2019-02-06 日本放送協会 固体撮像素子の製造方法
JP2016213283A (ja) * 2015-05-01 2016-12-15 ソニー株式会社 製造方法、および貫通電極付配線基板
US20160325984A1 (en) * 2015-05-06 2016-11-10 Invensense, Inc. Chip scale package
DE102015108494B4 (de) * 2015-05-29 2024-01-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Gehäusedeckels und Verfahren zum Herstellen eines optoelektronischen Bauelements
US9478504B1 (en) 2015-06-19 2016-10-25 Invensas Corporation Microelectronic assemblies with cavities, and methods of fabrication
US9666558B2 (en) 2015-06-29 2017-05-30 Point Engineering Co., Ltd. Substrate for mounting a chip and chip package using the substrate
US9570783B1 (en) * 2015-08-28 2017-02-14 General Electric Company Radio frequency micro-electromechanical systems having inverted microstrip transmission lines and method of making the same
US10330696B2 (en) * 2016-03-24 2019-06-25 Northrop Grumman Systems Corporation Accelerometer sensor system
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US10261286B2 (en) * 2017-07-18 2019-04-16 Xerox Corporation Digital micromirror device cooling system and method
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US10998361B2 (en) * 2018-09-22 2021-05-04 Omnivision Technologies, Inc. Image-sensor package and associated method
DE102019107760A1 (de) * 2019-03-26 2020-10-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung einer verbindungsstruktur und halbleiterbauelement
US11884536B2 (en) * 2020-10-23 2024-01-30 AAC Technologies Pte. Ltd. Electrical interconnection structure, electronic apparatus and manufacturing methods for the same
CN116206986B (zh) * 2022-12-15 2024-01-30 湖南越摩先进半导体有限公司 芯片封装方法及封装结构

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644086A (en) * 1996-10-08 1997-07-01 Tokyo Gas Co., Ltd. Preloaded linear beam vibration sensor
JPH10189822A (ja) * 1996-12-06 1998-07-21 Texas Instr Inc <Ti> 表面実装形基板構造および方法
JP3392069B2 (ja) 1999-02-15 2003-03-31 松下電工株式会社 半導体加速度センサおよびその製造方法
JP3575373B2 (ja) 1999-04-19 2004-10-13 株式会社村田製作所 外力検知センサの製造方法
JP2001110946A (ja) * 1999-10-05 2001-04-20 Toshiba Corp 電子デバイスおよびその製造方法
JP2001121500A (ja) * 1999-10-19 2001-05-08 Toyota Central Res & Dev Lab Inc 密閉型半導体装置及びその製造方法
JP2001196486A (ja) * 2000-01-07 2001-07-19 Murata Mfg Co Ltd 減圧パッケージ構造およびその製造方法
US6717254B2 (en) * 2001-02-22 2004-04-06 Tru-Si Technologies, Inc. Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture
US6890834B2 (en) * 2001-06-11 2005-05-10 Matsushita Electric Industrial Co., Ltd. Electronic device and method for manufacturing the same
JP3973402B2 (ja) * 2001-10-25 2007-09-12 株式会社日立製作所 高周波回路モジュール
US7049175B2 (en) * 2001-11-07 2006-05-23 Board Of Trustees Of The University Of Arkansas Method of packaging RF MEMS
JP3881888B2 (ja) * 2001-12-27 2007-02-14 セイコーエプソン株式会社 光デバイスの製造方法
JP3904484B2 (ja) * 2002-06-19 2007-04-11 新光電気工業株式会社 シリコン基板のスルーホールプラギング方法
TWI275168B (en) * 2003-06-06 2007-03-01 Sanyo Electric Co Semiconductor device and method for making the same
DE10331322A1 (de) * 2003-07-10 2005-02-03 Epcos Ag Elektronisches Bauelement und Verfahren zur Herstellung
JP2005125447A (ja) * 2003-10-23 2005-05-19 Hitachi Ltd 電子部品およびその製造方法
JP3975194B2 (ja) * 2003-12-02 2007-09-12 株式会社フジクラ パッケージの製造方法
US20050205951A1 (en) * 2004-03-18 2005-09-22 Honeywell Internatioanl, Inc. Flip chip bonded micro-electromechanical system (MEMS) device
KR100754069B1 (ko) * 2004-06-02 2007-08-31 삼성전기주식회사 플립칩 실장 기술을 이용한 반도체 패키지 및 패키징 방법
JP2006173557A (ja) * 2004-11-22 2006-06-29 Toshiba Corp 中空型半導体装置とその製造方法
US7348193B2 (en) * 2005-06-30 2008-03-25 Corning Incorporated Hermetic seals for micro-electromechanical system devices

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