JP2005529536A - 広帯域同調範囲および低位相ノイズをもつlc発振器 - Google Patents
広帯域同調範囲および低位相ノイズをもつlc発振器 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 2
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- 230000035945 sensitivity Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
- H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/025—Varying the frequency of the oscillations by electronic means the means being an electronic switch for switching in or out oscillator elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J2200/00—Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
- H03J2200/10—Tuning of a resonator by means of digitally controlled capacitor bank
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
Description
Claims (20)
- 発振器に動作可能に結合された少なくとも1つの調整回路を有するシステムであって、前記調整回路は、
抵抗と、
リアクタンス素子と、
第1のスイッチと
を具え、
前記第1のスイッチは、前記リアクタンス素子と直列になっており、前記発振器の出力に前記リアクタンス素子を結合し切り離し、前記抵抗は、前記第1のスイッチがオープンであるときに前記リアクタンス素子がバイアス電圧を有するようにするために前記リアクタンス素子にバイアス電圧を提供することを特徴とするシステム。 - 前記リアクタンス素子は、キャパシタであることを特徴とする請求項1記載のシステム。
- 第2のスイッチをさらに具え、
前記第1のスイッチが前記リアクタンス素子を切り離すときに、前記第2のスイッチは、前記バイアス電圧に前記抵抗を結合し切り離し、
前記第1のスイッチが前記リアクタンス素子を結合するときには前記バイアス電圧から前記抵抗を切り離すことを特徴とする請求項1記載のシステム。 - 前記バイアス電圧は、抵抗分割器から生成される電圧、アース電圧、電源電圧、および前記発振器出力のコモンモード電圧のうちの少なくとも1つであることを特徴とする請求項1記載のシステム。
- 前記抵抗分割器からの前記バイアス電圧は、アース電圧から電源電圧に分布することを特徴とする請求項4記載のシステム。
- 前記バイアス電圧が前記抵抗に常に結合されるようにし、また、前記第1のスイッチが閉じられるときに、前記バイアス電圧が前記調整回路の動作特性を実質上変化させないようにするために、前記抵抗の大きさを調整することを特徴とする請求項1記載のシステム。
- 前記第1のスイッチは、半導体デバイスであることを特徴とする請求項1記載のシステム。
- 前記第1のスイッチはトランジスタであり、
前記第2のスイッチは前記第1のスイッチよりも小さなトランジスタであることを特徴とする請求項3記載のシステム。 - 複数の調整回路をさらに具えたことを特徴とする請求項1記載のシステム。
- 前記複数の調整回路のそれぞれにおける各リアクタンス素子は、キャパシタであり、各キャパシタのキャパシタンスは、同じであることを特徴とする請求項9記載のシステム。
- 前記システムは、能動発振器回路、PLL、レシーバ、トランスミッタ、トランシーバ、無線通信デバイス、基地局、およびモバイルユニットのうちの少なくとも1つであることを特徴とする請求項1に記載のシステム。
- 第1の出力ノードおよび第2の出力ノードを有する能動発振器と、
前記第1の出力ノードと前記第2の出力ノードとを結合するインダクタと、
前記第1の出力ノードまたは前記第2の出力ノードのいずれかに結合され、各容量性回路がキャパシタ、抵抗、および第1のスイッチを有する少なくとも1つの容量性回路と
を具え、
前記第1のスイッチがオープンであるときに前記抵抗は前記キャパシタにバイアス電圧を提供し、前記第1のスイッチは、前記キャパシタと直列になっており、前記発振器の前記出力に前記キャパシタを結合し切り離すことを特徴とする装置。 - 前記キャパシタは、前記第1の出力ノードまたは第2の出力ノードのいずれかに前記第1のスイッチを結合し、前記第1のスイッチは、前記キャパシタをアース電圧レベルに結合し、前記抵抗は、前記キャパシタと第1のスイッチとの共通ノードにおいて前記キャパシタおよび第1のスイッチに結合されることを特徴とする請求項12記載の装置。
- 前記バイアス電圧は、抵抗分割器から生成される電圧、アース電圧、電源電圧、および前記発振器出力のコモンモード電圧のうちの少なくとも1つであることを特徴とする請求項12記載の装置。
- 前記少なくとも1つの容量性回路は、第2のスイッチを具え、
前記第2のスイッチは、前記バイアス電圧に前記抵抗を結合し切り離すことを特徴とする請求項12記載の装置。 - 前記第2のスイッチと抵抗は直列になっており、
前記バイアス電圧は、前記発振器出力のコモンモード電圧であることを特徴とする請求項15記載の装置。 - 前記少なくとも1つの容量性回路は、
前記第1のスイッチがオープンである場合には、前記第2のスイッチは閉じられ、
前記第1のスイッチが閉じられている場合には、前記第2のスイッチはオープンであるように、構成されることを特徴とする請求項15記載の装置。 - 前記装置は、PLL、レシーバ、トランスミッタ、トランシーバ、無線通信デバイス、基地局、およびモバイルユニットのうちの少なくとも1つであることを特徴とする請求項12記載の装置。
- 発振器を調整する方法であって、
第1のスイッチがオープンであるときにリアクタンス素子がバイアス電圧を有するようにするために抵抗を介して前記リアクタンス素子にバイアス電圧を提供する工程と、
前記第1のスイッチを使用して前記リアクタンス素子を前記発振器に結合して切り離すことにより、前記発振器の周波数を調整する工程と
を具えたことを特徴とする方法。 - 前記第1のスイッチが前記リアクタンス素子を切り離すときに第2のスイッチを介して前記抵抗を前記バイアス電圧に結合する工程と、
前記第1のスイッチが前記リアクタンス素子を結合するときに前記第2のスイッチを介して前記抵抗を前記バイアス電圧から切り離す工程と
をさらに具えたことを特徴とする請求項19記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US38674102P | 2002-06-10 | 2002-06-10 | |
US60/386,741 | 2002-06-10 | ||
US10/443,835 | 2003-05-23 | ||
US10/443,835 US6876266B2 (en) | 2002-06-10 | 2003-05-23 | LC oscillator with wide tuning range and low phase noise |
PCT/US2003/015402 WO2003105346A1 (en) | 2002-06-10 | 2003-06-05 | Lc oscillator with wide tuning range and low phase noise |
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JP2005529536A true JP2005529536A (ja) | 2005-09-29 |
JP2005529536A5 JP2005529536A5 (ja) | 2006-07-20 |
JP5036966B2 JP5036966B2 (ja) | 2012-09-26 |
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JP2004512293A Expired - Lifetime JP5036966B2 (ja) | 2002-06-10 | 2003-06-05 | 広帯域同調範囲および低位相ノイズをもつlc発振器 |
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US (1) | US6876266B2 (ja) |
EP (1) | EP1514351B1 (ja) |
JP (1) | JP5036966B2 (ja) |
KR (1) | KR20060012239A (ja) |
CN (1) | CN100379153C (ja) |
AU (1) | AU2003234612A1 (ja) |
CA (1) | CA2488631C (ja) |
DE (1) | DE60317669T2 (ja) |
HK (1) | HK1081738A1 (ja) |
TW (1) | TWI323979B (ja) |
WO (1) | WO2003105346A1 (ja) |
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DE10061241A1 (de) * | 2000-12-08 | 2002-06-27 | Infineon Technologies Ag | Oszillatorschaltung |
-
2003
- 2003-05-23 US US10/443,835 patent/US6876266B2/en not_active Expired - Lifetime
- 2003-06-05 CA CA2488631A patent/CA2488631C/en not_active Expired - Lifetime
- 2003-06-05 JP JP2004512293A patent/JP5036966B2/ja not_active Expired - Lifetime
- 2003-06-05 CN CNB038164760A patent/CN100379153C/zh not_active Expired - Fee Related
- 2003-06-05 KR KR1020047019570A patent/KR20060012239A/ko not_active Application Discontinuation
- 2003-06-05 EP EP03728954A patent/EP1514351B1/en not_active Expired - Lifetime
- 2003-06-05 WO PCT/US2003/015402 patent/WO2003105346A1/en active IP Right Grant
- 2003-06-05 DE DE60317669T patent/DE60317669T2/de not_active Expired - Lifetime
- 2003-06-05 AU AU2003234612A patent/AU2003234612A1/en not_active Abandoned
- 2003-06-09 TW TW092115527A patent/TWI323979B/zh not_active IP Right Cessation
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2006
- 2006-02-03 HK HK06101477A patent/HK1081738A1/xx not_active IP Right Cessation
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JPS60145720U (ja) * | 1984-03-09 | 1985-09-27 | 日本電信電話株式会社 | デイジタル制御形圧電発振回路 |
JPS6286907A (ja) * | 1985-10-11 | 1987-04-21 | Matsushima Kogyo Co Ltd | 水晶発振回路 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007228339A (ja) * | 2006-02-24 | 2007-09-06 | Renesas Technology Corp | 発振回路を内蔵した通信用半導体集積回路 |
JP2008085857A (ja) * | 2006-09-28 | 2008-04-10 | Mitsumi Electric Co Ltd | 電圧制御型発振回路 |
WO2008044747A1 (fr) * | 2006-10-06 | 2008-04-17 | Nsc Co., Ltd. | Oscillateur commandé en tension |
JP2008098731A (ja) * | 2006-10-06 | 2008-04-24 | Niigata Seimitsu Kk | 電圧制御発振器 |
WO2013136766A1 (ja) * | 2012-03-12 | 2013-09-19 | セイコーエプソン株式会社 | 電圧制御発振器、信号発生装置、及び、電子機器 |
JPWO2013136766A1 (ja) * | 2012-03-12 | 2015-08-03 | セイコーエプソン株式会社 | 電圧制御発振器、信号発生装置、及び、電子機器 |
US9236872B2 (en) | 2012-03-12 | 2016-01-12 | Seiko Epson Corporation | Voltage-controlled oscillator, signal generation apparatus, and electronic device |
WO2017085942A1 (ja) * | 2015-11-18 | 2017-05-26 | 株式会社ソシオネクスト | 電圧制御発振回路及びpll回路 |
CN108352810A (zh) * | 2015-11-18 | 2018-07-31 | 株式会社索思未来 | 电压控制振荡电路以及pll电路 |
US10554173B2 (en) | 2015-11-18 | 2020-02-04 | Socionext Inc. | Voltage controlled oscillator and PLL circuit |
CN108352810B (zh) * | 2015-11-18 | 2021-08-20 | 株式会社索思未来 | 电压控制振荡电路以及pll电路 |
Also Published As
Publication number | Publication date |
---|---|
CN100379153C (zh) | 2008-04-02 |
EP1514351A1 (en) | 2005-03-16 |
CA2488631C (en) | 2014-01-07 |
EP1514351A4 (en) | 2005-12-07 |
US20030227340A1 (en) | 2003-12-11 |
KR20060012239A (ko) | 2006-02-07 |
HK1081738A1 (en) | 2006-05-19 |
CA2488631A1 (en) | 2003-12-18 |
JP5036966B2 (ja) | 2012-09-26 |
WO2003105346A1 (en) | 2003-12-18 |
TW200409468A (en) | 2004-06-01 |
CN1669222A (zh) | 2005-09-14 |
AU2003234612A1 (en) | 2003-12-22 |
US6876266B2 (en) | 2005-04-05 |
DE60317669T2 (de) | 2008-10-30 |
TWI323979B (en) | 2010-04-21 |
EP1514351B1 (en) | 2007-11-21 |
DE60317669D1 (de) | 2008-01-03 |
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