ITRM910645A0 - Disposizione per stadio pilota di linea di parola per dispositivi di memoria a semiconduttori - Google Patents

Disposizione per stadio pilota di linea di parola per dispositivi di memoria a semiconduttori

Info

Publication number: ITRM910645A0
Authority: IT; Italy
Prior art keywords: semiconductor memory; memory devices; stage arrangement; pilot stage; speech line
Prior art date: 1991-02-05

Application number

IT91RM645A

Other languages

English (en)

Inventor

Dong-Seon Min

Dong-Soo Jeon

Kyoung-Yeol Min

Yong-Sik Seok

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-02-05

Filing date

1991-08-29

Publication date

1991-08-29

1991-08-29 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1991-08-29 Publication of ITRM910645A0 publication Critical patent/ITRM910645A0/it

1993-03-01 Publication of ITRM910645A1 publication Critical patent/ITRM910645A1/it

1995-03-30 Application granted granted Critical

1995-03-30 Publication of IT1250088B publication Critical patent/IT1250088B/it

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Dram (AREA)
Semiconductor Memories (AREA)
Static Random-Access Memory (AREA)

ITRM910645A 1991-02-05 1991-08-29 Disposizione per stadio pilota di linea di parola per dispositivi di memoria a semiconduttori. IT1250088B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019910001964A KR930008310B1 (ko)	1991-02-05	1991-02-05	반도체 메모리장치의 워드라인드라이버단 배치방법

Publications (3)

Publication Number	Publication Date
ITRM910645A0 true ITRM910645A0 (it)	1991-08-29
ITRM910645A1 ITRM910645A1 (it)	1993-03-01
IT1250088B IT1250088B (it)	1995-03-30

Family

ID=19310780

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
ITRM910645A IT1250088B (it)	1991-02-05	1991-08-29	Disposizione per stadio pilota di linea di parola per dispositivi di memoria a semiconduttori.

Country Status (7)

Country	Link
US (1)	US5319605A (it)
JP (1)	JPH0812757B2 (it)
KR (1)	KR930008310B1 (it)
DE (1)	DE4126050C2 (it)
FR (1)	FR2672418B1 (it)
GB (1)	GB2252650B (it)
IT (1)	IT1250088B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5446410A (en) *	1992-04-20	1995-08-29	Matsushita Electric Industrial Co.,Ltd.	Semiconductor integrated circuit
JP3333352B2 (ja) *	1995-04-12	2002-10-15	株式会社東芝	半導体記憶装置
JP3411129B2 (ja) *	1995-07-03	2003-05-26	沖電気工業株式会社	半導体メモリ
KR100204542B1 (ko) *	1995-11-09	1999-06-15	윤종용	멀티 서브워드라인 드라이버를 갖는 반도체 메모리장치
KR100205007B1 (ko) *	1995-12-04	1999-06-15	윤종용	멀티-워드라인 드라이버를 갖는 반도체 메모리장치
KR0172376B1 (ko) *	1995-12-06	1999-03-30	김광호	서브워드라인 드라이버 구조를 가지는 반도체 메모리장치
KR100635195B1 (ko) *	2000-12-29	2006-10-16	주식회사 하이닉스반도체	플래쉬 메모리 장치
US7123537B2 (en) *	2002-03-15	2006-10-17	Macronix International Co., Ltd.	Decoder arrangement of a memory cell array
US7170783B2 (en) *	2005-04-01	2007-01-30	Micron Technology, Inc.	Layout for NAND flash memory array having reduced word line impedance
JP4679964B2 (ja) *	2005-05-17	2011-05-11	ルネサスエレクトロニクス株式会社	不揮発性半導体記憶装置
KR102109416B1 (ko) *	2013-05-21	2020-05-12	삼성전자주식회사	서브 워드라인 드라이버를 갖는 반도체 메모리 장치 및 그것의 구동방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5567993A (en) *	1978-11-14	1980-05-22	Fujitsu Ltd	Semiconductor memory unit
JPS5975488A (ja) *	1982-10-20	1984-04-28	Mitsubishi Electric Corp	半導体メモリ装置
JPS61110459A (ja) *	1984-11-02	1986-05-28	Nippon Telegr & Teleph Corp <Ntt>	半導体メモリ
US4695978A (en) *	1984-11-15	1987-09-22	Fujitsu Limited	Semiconductor memory device
JPS61283162A (ja) *	1985-06-10	1986-12-13	Nippon Denso Co Ltd	半導体記憶装置
JPS62165788A (ja) *	1986-01-16	1987-07-22	Sharp Corp	半導体集積回路装置
JP2511415B2 (ja) *	1986-06-27	1996-06-26	沖電気工業株式会社	半導体装置
US5172335A (en) *	1987-02-23	1992-12-15	Hitachi, Ltd.	Semiconductor memory with divided bit load and data bus lines
JPS63225991A (ja) *	1987-03-16	1988-09-20	Hitachi Ltd	半導体記憶装置
JP2629697B2 (ja) *	1987-03-27	1997-07-09	日本電気株式会社	半導体記憶装置
JPH0828421B2 (ja) *	1987-08-27	1996-03-21	株式会社東芝	半導体集積回路装置
JPH01245489A (ja) *	1988-03-25	1989-09-29	Hitachi Ltd	半導体記憶装置
JPS6464192A (en) *	1988-03-26	1989-03-10	Mitsubishi Electric Corp	Semiconductor memory
JPH077808B2 (ja) *	1988-03-29	1995-01-30	株式会社東芝	集積回路
JPH077809B2 (ja) *	1988-03-29	1995-01-30	株式会社東芝	集積回路
JP2547615B2 (ja) *	1988-06-16	1996-10-23	三菱電機株式会社	読出専用半導体記憶装置および半導体記憶装置
JPH0233799A (ja) *	1988-07-22	1990-02-02	Toshiba Corp	半導体記録装置のデコード方法およびその装置
JPH0766666B2 (ja) *	1988-08-29	1995-07-19	三菱電機株式会社	半導体記憶装置
JPH02156666A (ja) *	1988-12-09	1990-06-15	Matsushita Electron Corp	半導体装置
JPH02203488A (ja) *	1989-02-02	1990-08-13	Oki Electric Ind Co Ltd	ダイナミックｒａｍ
US5148401A (en) *	1989-02-02	1992-09-15	Oki Electric Industry Co., Ltd.	DRAM with split word lines
JPH03235290A (ja) *	1990-02-09	1991-10-21	Mitsubishi Electric Corp	階層的な行選択線を有する半導体記憶装置

1991
- 1991-02-05 KR KR1019910001964A patent/KR930008310B1/ko not_active IP Right Cessation
- 1991-07-05 US US07/726,180 patent/US5319605A/en not_active Expired - Lifetime
- 1991-07-26 FR FR9109511A patent/FR2672418B1/fr not_active Expired - Fee Related
- 1991-08-06 DE DE4126050A patent/DE4126050C2/de not_active Expired - Fee Related
- 1991-08-29 JP JP3242317A patent/JPH0812757B2/ja not_active Expired - Lifetime
- 1991-08-29 IT ITRM910645A patent/IT1250088B/it active IP Right Grant
- 1991-08-30 GB GB9118641A patent/GB2252650B/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
FR2672418B1 (fr)	1997-01-24
JPH04278289A (ja)	1992-10-02
KR920017101A (ko)	1992-09-26
DE4126050A1 (de)	1992-08-13
GB2252650B (en)	1995-07-05
IT1250088B (it)	1995-03-30
ITRM910645A1 (it)	1993-03-01
GB9118641D0 (en)	1991-10-16
JPH0812757B2 (ja)	1996-02-07
US5319605A (en)	1994-06-07
GB2252650A (en)	1992-08-12
KR930008310B1 (ko)	1993-08-27
DE4126050C2 (de)	1996-01-18
FR2672418A1 (fr)	1992-08-07

Legal Events

Date	Code	Title	Description
1995-03-30	0001	Granted
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19960626

Publication	Publication Date	Title
IT1276057B1 (it)	1997-10-24	Circuito di comando di linea di parola di un dispositivo di memoria a semiconduttore.
DE69430683T2 (de)	2002-11-21	Halbleiterspeicheranordnung
DE69232356D1 (de)	2002-02-21	Halbleiterspeicheranordnung
DE69332329T2 (de)	2003-05-15	Halbleiteranordnung
DE69327499T2 (de)	2000-08-10	Halbleiterspeicher
DE69332960D1 (de)	2003-06-12	Halbleiteranordnung
ITMI910107A0 (it)	1991-01-18	Dispositivo di memoria a semiconduttore
DE69331562T2 (de)	2002-09-12	Halbleiterspeicheranordnung
DE69418122D1 (de)	1999-06-02	Speiseleitungen-Anordnung einer Halbleitervorrichtung
DE69221218D1 (de)	1997-09-04	Halbleiterspeicher
DE69427443T2 (de)	2002-04-18	Halbleiterspeicheranordnung
DE69216695D1 (de)	1997-02-27	Halbleiterspeicher
DE69322747D1 (de)	1999-02-04	Halbleiterspeicheranordnung
DE69432882D1 (de)	2003-08-07	Halbleiterspeicheranordnung
DE69322725D1 (de)	1999-02-04	Halbleiterspeicheranordnung
KR940011024U (ko)	1994-05-27	반도체 메모리 장치
ITRM910645A0 (it)	1991-08-29	Disposizione per stadio pilota di linea di parola per dispositivi di memoria a semiconduttori
ITMI930074A0 (it)	1993-01-19	Dispositivo di memoria a semiconduttore avente elemento di comando di parola
DE69322436T2 (de)	1999-05-27	Halbleiterspeicheranordnung
DE69324470D1 (de)	1999-05-20	Halbleiterspeicheranordnung
FR2685828B1 (fr)	1994-10-28	Laser a semiconducteur.
ITMI912808A1 (it)	1993-04-23	Dispositivo di memoria a semiconduttore
DE69427107T2 (de)	2001-11-15	Halbleiterspeicheranordnung
IT1274305B (it)	1997-07-17	Dispositivo a semiconduttore di memoria
DE69327125D1 (de)	2000-01-05	Halbleiterspeicher