JPS6464192A - Semiconductor memory - Google Patents

Abstract

PURPOSE:To obtain a memory at high speed and with low energy consumption by dividing a memory cell into two steps of a pre-word line and a divided word line, selecting a row, decreasing the number of columns of a direct current path, and making the divided word line shorter than the pre-word line. CONSTITUTION:When the cell of a memory cell group la is selected, the row address information to be accessed is decoded by a row decoder 4 and one pre-word line 15 is activated. When a selecting signal is added to a memory cell group selecting line 14a, and AND gate 16a is opened and a divided word line 3a is activated. Consequently, the column in which a column current flows from a power source not shown in the figure through a bit line not shown in the figure into the memory cell group la, is only the column in the selected cell group la. When the divided word line 3a is made shorter than the pre-word line 15, a small capacity is obtained, and a memory cell can be accessed at high speed. By such constitution, the large capacity memory at the high speed and with low energy consumption can be formed.