HK1200196A1 - 用於固體化學製品持續蒸汽發送的起泡器 - Google Patents
用於固體化學製品持續蒸汽發送的起泡器Info
- Publication number
- HK1200196A1 HK1200196A1 HK15100671.9A HK15100671A HK1200196A1 HK 1200196 A1 HK1200196 A1 HK 1200196A1 HK 15100671 A HK15100671 A HK 15100671A HK 1200196 A1 HK1200196 A1 HK 1200196A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- bubbler
- solid chemical
- vapor delivery
- constant vapor
- constant
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US57268704P | 2004-05-20 | 2004-05-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1200196A1 true HK1200196A1 (zh) | 2015-07-31 |
Family
ID=34968166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK15100671.9A HK1200196A1 (zh) | 2004-05-20 | 2015-01-21 | 用於固體化學製品持續蒸汽發送的起泡器 |
Country Status (14)
Country | Link |
---|---|
US (1) | US8170404B2 (zh) |
EP (1) | EP1747302B1 (zh) |
JP (2) | JP5383038B2 (zh) |
CN (2) | CN104152870A (zh) |
AU (1) | AU2005245634B2 (zh) |
CA (1) | CA2566944C (zh) |
HK (1) | HK1200196A1 (zh) |
IL (1) | IL179354A (zh) |
IN (1) | IN266811B (zh) |
PL (1) | PL1747302T3 (zh) |
RU (1) | RU2384652C2 (zh) |
TW (1) | TWI402372B (zh) |
UA (1) | UA86810C2 (zh) |
WO (1) | WO2005113857A1 (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7547363B2 (en) * | 2003-07-08 | 2009-06-16 | Tosoh Finechem Corporation | Solid organometallic compound-filled container and filling method thereof |
US20060121192A1 (en) * | 2004-12-02 | 2006-06-08 | Jurcik Benjamin J | Liquid precursor refill system |
GB2432371B (en) * | 2005-11-17 | 2011-06-15 | Epichem Ltd | Improved bubbler for the transportation of substances by a carrier gas |
US20070254100A1 (en) * | 2006-04-26 | 2007-11-01 | Applied Materials, Inc. | MOCVD reactor without metalorganic-source temperature control |
US20070254093A1 (en) * | 2006-04-26 | 2007-11-01 | Applied Materials, Inc. | MOCVD reactor with concentration-monitor feedback |
KR20140075019A (ko) * | 2006-05-30 | 2014-06-18 | 우베 고산 가부시키가이샤 | 유기금속 화합물의 공급 장치 |
GB2444143B (en) * | 2006-11-27 | 2009-10-28 | Sumitomo Chemical Co | Apparatus of supplying organometallic compound |
JP5262083B2 (ja) * | 2007-11-26 | 2013-08-14 | 宇部興産株式会社 | 固体有機金属化合物の供給装置 |
US9034105B2 (en) | 2008-01-10 | 2015-05-19 | American Air Liquide, Inc. | Solid precursor sublimator |
KR101765734B1 (ko) | 2009-11-02 | 2017-08-07 | 시그마-알드리치 컴퍼니., 엘엘씨 | 고형 전구체 전달 어셈블리 및 관련 방법 |
JP2013115208A (ja) * | 2011-11-28 | 2013-06-10 | Tokyo Electron Ltd | 気化原料供給装置、これを備える基板処理装置、及び気化原料供給方法 |
DE102012021527A1 (de) | 2012-10-31 | 2014-04-30 | Dockweiler Ag | Vorrichtung zur Erzeugung eines Gasgemisches |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US20150079283A1 (en) * | 2013-09-13 | 2015-03-19 | LGS Innovations LLC | Apparatus and method to deposit doped films |
WO2016025367A1 (en) * | 2014-08-11 | 2016-02-18 | Veeco Instruments Inc. | Enhanced enclosures for acoustical gas concentration sensing and flow control |
DE102015108430A1 (de) * | 2015-05-28 | 2016-12-01 | Dockweiler Ag | Vorrichtung zur Erzeugung eines Gases mit einer ringzylindrischen Reaktionskammer |
CN105063570A (zh) * | 2015-08-31 | 2015-11-18 | 清远先导材料有限公司 | 一种提高三甲基铟利用率的方法 |
US10876205B2 (en) | 2016-09-30 | 2020-12-29 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
US11926894B2 (en) | 2016-09-30 | 2024-03-12 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
US11168394B2 (en) | 2018-03-14 | 2021-11-09 | CeeVeeTech, LLC | Method and apparatus for making a vapor of precise concentration by sublimation |
JP7376278B2 (ja) | 2018-08-16 | 2023-11-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | 固体原料昇華器 |
US11624113B2 (en) | 2019-09-13 | 2023-04-11 | Asm Ip Holding B.V. | Heating zone separation for reactant evaporation system |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB404005A (en) | 1932-06-30 | 1934-01-01 | Holmes W C & Co Ltd | New or improved process for bringing mutually immiscible liquids of different specific gravity into intimate contact |
US4506815A (en) * | 1982-12-09 | 1985-03-26 | Thiokol Corporation | Bubbler cylinder and dip tube device |
FR2569207B1 (fr) * | 1984-08-14 | 1986-11-14 | Mellet Robert | Procede et dispositif d'obtention d'un courant gazeux contenant un compose a l'etat de vapeur, utilisable notamment pour introduire ce compose dans un reacteur d'epitaxie |
JPS61183195A (ja) | 1985-02-07 | 1986-08-15 | Nec Corp | 液体原料容器 |
JPS6211536A (ja) | 1985-07-09 | 1987-01-20 | Nec Corp | 有機金属バブラ−容器 |
JPS6311598A (ja) * | 1986-07-03 | 1988-01-19 | Toyo Sutoufuaa Chem:Kk | 有機金属気相成長用シリンダ− |
JPS6425523A (en) | 1987-07-22 | 1989-01-27 | Matsushita Electric Ind Co Ltd | Container of organic metal compound |
JPS6464314A (en) * | 1987-09-04 | 1989-03-10 | Mitsubishi Electric Corp | Sublimator |
JPH01168331A (ja) * | 1987-12-24 | 1989-07-03 | Mitsui Toatsu Chem Inc | 有機金属化合物の飽和方法 |
DE3801147A1 (de) * | 1988-01-16 | 1989-07-27 | Philips Patentverwaltung | Vorrichtung zum erzeugen eines mit dem dampf eines wenig fluechtigen stoffes angereicherten gasstroms |
JPH0269389A (ja) * | 1988-08-31 | 1990-03-08 | Toyo Stauffer Chem Co | 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法 |
GB2223509B (en) * | 1988-10-04 | 1992-08-05 | Stc Plc | Vapour phase processing |
ATE139580T1 (de) * | 1989-09-26 | 1996-07-15 | Canon Kk | Gasversorgungsvorrichtung und ihre verwendung für eine filmabscheidungsanlage |
JPH03181123A (ja) | 1989-12-11 | 1991-08-07 | Ricoh Co Ltd | 気相成長法 |
JP2943076B2 (ja) | 1990-06-07 | 1999-08-30 | アネルバ株式会社 | バブリング機構とこれを含む表面処理装置 |
JPH0499312A (ja) * | 1990-08-17 | 1992-03-31 | Mitsubishi Electric Corp | 有機金属気相成長装置 |
JPH04187232A (ja) * | 1990-11-17 | 1992-07-03 | Fujikura Ltd | 原料供給装置 |
GB9116381D0 (en) * | 1991-07-30 | 1991-09-11 | Shell Int Research | Method for deposition of a metal |
JPH05251348A (ja) | 1992-03-05 | 1993-09-28 | Mitsubishi Electric Corp | バブラおよびガス供給装置 |
GB9206552D0 (en) | 1992-03-26 | 1992-05-06 | Epichem Ltd | Bubblers |
JPH06151311A (ja) * | 1992-10-30 | 1994-05-31 | Tosoh Akzo Corp | 有機金属気相成長法における固体有機金属化合物供給装置 |
JPH06196415A (ja) | 1992-12-25 | 1994-07-15 | Kawasaki Steel Corp | 気相成長用ガス供給方法及びその装置 |
US5502227A (en) * | 1993-07-27 | 1996-03-26 | Cvd, Incorporated | Liquid indium source |
KR960010901A (ko) * | 1994-09-30 | 1996-04-20 | 김광호 | 고체 유기화합물 전용 버블러 장치 |
US5553395A (en) * | 1995-05-31 | 1996-09-10 | Hughes Aircraft Company | Bubbler for solid metal organic source material and method of producing saturated carrying gas |
TW322602B (zh) * | 1996-04-05 | 1997-12-11 | Ehara Seisakusho Kk | |
US6180190B1 (en) | 1997-12-01 | 2001-01-30 | President And Fellows Of Harvard College | Vapor source for chemical vapor deposition |
JP3998309B2 (ja) * | 1997-12-26 | 2007-10-24 | Dowaホールディングス株式会社 | Cvd法における有機アルカリ土類金属錯体の気化方法 |
US6444038B1 (en) * | 1999-12-27 | 2002-09-03 | Morton International, Inc. | Dual fritted bubbler |
DE10005820C1 (de) * | 2000-02-10 | 2001-08-02 | Schott Glas | Gasversorungsvorrichtung für Precursoren geringen Dampfdrucks |
JP2004509041A (ja) * | 2000-05-25 | 2004-03-25 | コーニング インコーポレイテッド | チタニアドープ石英ガラスプリフォームの作成方法 |
EP1160355B1 (en) * | 2000-05-31 | 2004-10-27 | Shipley Company LLC | Bubbler |
KR101027485B1 (ko) * | 2001-02-12 | 2011-04-06 | 에이에스엠 아메리카, 인코포레이티드 | 반도체 박막 증착을 위한 개선된 공정 |
JP3909022B2 (ja) | 2002-02-08 | 2007-04-25 | 東ソー・ファインケム株式会社 | 固体有機金属化合物用充填容器 |
US7031600B2 (en) * | 2003-04-07 | 2006-04-18 | Applied Materials, Inc. | Method and apparatus for silicon oxide deposition on large area substrates |
US6909839B2 (en) * | 2003-07-23 | 2005-06-21 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
US7258892B2 (en) * | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
-
2005
- 2005-05-17 IN IN3807KON2006 patent/IN266811B/en unknown
- 2005-05-17 AU AU2005245634A patent/AU2005245634B2/en not_active Ceased
- 2005-05-17 CN CN201410384907.2A patent/CN104152870A/zh active Pending
- 2005-05-17 PL PL05749586T patent/PL1747302T3/pl unknown
- 2005-05-17 WO PCT/EP2005/052247 patent/WO2005113857A1/en active Application Filing
- 2005-05-17 CA CA2566944A patent/CA2566944C/en not_active Expired - Fee Related
- 2005-05-17 CN CNA2005800159337A patent/CN1954094A/zh active Pending
- 2005-05-17 UA UAA200613504A patent/UA86810C2/ru unknown
- 2005-05-17 RU RU2006145280/02A patent/RU2384652C2/ru active
- 2005-05-17 JP JP2007517248A patent/JP5383038B2/ja active Active
- 2005-05-17 US US11/579,889 patent/US8170404B2/en active Active
- 2005-05-17 EP EP05749586A patent/EP1747302B1/en active Active
- 2005-05-20 TW TW094116492A patent/TWI402372B/zh active
-
2006
- 2006-11-16 IL IL179354A patent/IL179354A/en active IP Right Grant
-
2013
- 2013-02-21 JP JP2013032199A patent/JP5645985B2/ja active Active
-
2015
- 2015-01-21 HK HK15100671.9A patent/HK1200196A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
PL1747302T3 (pl) | 2013-05-31 |
EP1747302A1 (en) | 2007-01-31 |
TWI402372B (zh) | 2013-07-21 |
AU2005245634A1 (en) | 2005-12-01 |
IN266811B (zh) | 2015-06-03 |
IL179354A (en) | 2013-03-24 |
US8170404B2 (en) | 2012-05-01 |
AU2005245634B2 (en) | 2010-07-01 |
UA86810C2 (ru) | 2009-05-25 |
CN1954094A (zh) | 2007-04-25 |
CA2566944A1 (en) | 2005-12-01 |
EP1747302B1 (en) | 2012-12-26 |
RU2384652C2 (ru) | 2010-03-20 |
CN104152870A (zh) | 2014-11-19 |
TW200604373A (en) | 2006-02-01 |
RU2006145280A (ru) | 2008-07-10 |
JP2013138238A (ja) | 2013-07-11 |
IL179354A0 (en) | 2007-03-08 |
JP2007538393A (ja) | 2007-12-27 |
CA2566944C (en) | 2016-10-11 |
JP5383038B2 (ja) | 2014-01-08 |
WO2005113857A1 (en) | 2005-12-01 |
US20070221127A1 (en) | 2007-09-27 |
JP5645985B2 (ja) | 2014-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
HK1200196A1 (zh) | 用於固體化學製品持續蒸汽發送的起泡器 | |
GB2432371B (en) | Improved bubbler for the transportation of substances by a carrier gas | |
EP1713775A4 (en) | CHEMICAL COMPOUNDS | |
GB0412467D0 (en) | Chemical compounds | |
EP1793826A4 (en) | CHEMICAL COMPOUNDS | |
EP1708697A4 (en) | CHEMICAL COMPOUNDS | |
EP1799671A4 (en) | CHEMICAL COMPOUNDS | |
ZA200701282B (en) | Chemical compounds | |
IL181394A0 (en) | Atmospheric pressure chemical vapor deposition | |
EP1778231A4 (en) | CHEMICAL COMPOUNDS | |
GB0406280D0 (en) | Chemical compounds | |
EP1838312A4 (en) | CHEMICAL COMPOUNDS | |
GB0413389D0 (en) | Chemical compounds | |
GB0412072D0 (en) | Chemical compounds | |
GB0412468D0 (en) | Chemical compounds | |
GB0502446D0 (en) | Improved precursors for chemical vapour deposition | |
GB0411595D0 (en) | Chemical compounds | |
GB0306027D0 (en) | Precursors for chemical vapour deposition | |
GB0403781D0 (en) | Chemical compounds | |
GB0411592D0 (en) | Chemical compounds | |
GB0409567D0 (en) | Chemical compounds | |
GB0409494D0 (en) | Chemical compounds | |
GB0325752D0 (en) | Precursors for chemical vapour deposition | |
GB0321409D0 (en) | Precursors for chemical vapour deposition | |
ZA200410371B (en) | Chemical dispenser |