FR2943178B1 - Capteur matriciel a faible consommation - Google Patents
Capteur matriciel a faible consommationInfo
- Publication number
- FR2943178B1 FR2943178B1 FR0951596A FR0951596A FR2943178B1 FR 2943178 B1 FR2943178 B1 FR 2943178B1 FR 0951596 A FR0951596 A FR 0951596A FR 0951596 A FR0951596 A FR 0951596A FR 2943178 B1 FR2943178 B1 FR 2943178B1
- Authority
- FR
- France
- Prior art keywords
- low consumption
- matrix sensor
- matrix
- sensor
- consumption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0951596A FR2943178B1 (fr) | 2009-03-13 | 2009-03-13 | Capteur matriciel a faible consommation |
CN201080011880.2A CN102379120B (zh) | 2009-03-13 | 2010-03-10 | 低功耗矩阵传感器 |
KR1020117024094A KR101361743B1 (ko) | 2009-03-13 | 2010-03-10 | 저 소비 매트릭스 센서 |
JP2011553584A JP5791523B2 (ja) | 2009-03-13 | 2010-03-10 | 低消費マトリックスセンサ |
US13/256,351 US8884205B2 (en) | 2009-03-13 | 2010-03-10 | Low consumption matrix sensor |
PCT/IB2010/051025 WO2010103464A1 (fr) | 2009-03-13 | 2010-03-10 | Capteur matriciel a faible consommation |
EP10710668A EP2406944A1 (fr) | 2009-03-13 | 2010-03-10 | Capteur matriciel a faible consommation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0951596A FR2943178B1 (fr) | 2009-03-13 | 2009-03-13 | Capteur matriciel a faible consommation |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2943178A1 FR2943178A1 (fr) | 2010-09-17 |
FR2943178B1 true FR2943178B1 (fr) | 2011-08-26 |
Family
ID=41131221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0951596A Active FR2943178B1 (fr) | 2009-03-13 | 2009-03-13 | Capteur matriciel a faible consommation |
Country Status (7)
Country | Link |
---|---|
US (1) | US8884205B2 (fr) |
EP (1) | EP2406944A1 (fr) |
JP (1) | JP5791523B2 (fr) |
KR (1) | KR101361743B1 (fr) |
CN (1) | CN102379120B (fr) |
FR (1) | FR2943178B1 (fr) |
WO (1) | WO2010103464A1 (fr) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2943178B1 (fr) * | 2009-03-13 | 2011-08-26 | New Imaging Technologies Sas | Capteur matriciel a faible consommation |
FR2997596B1 (fr) | 2012-10-26 | 2015-12-04 | New Imaging Technologies Sas | Structure d'un pixel actif de type cmos |
US9373655B2 (en) | 2014-01-21 | 2016-06-21 | Sony Corporation | Imaging device and electronic apparatus |
JP6171997B2 (ja) | 2014-03-14 | 2017-08-02 | ソニー株式会社 | 固体撮像素子およびその駆動方法、並びに電子機器 |
EP2924979B1 (fr) * | 2014-03-25 | 2023-01-18 | IMEC vzw | Améliorations de ou associées aux capteurs d'image |
FR3022397B1 (fr) | 2014-06-13 | 2018-03-23 | New Imaging Technologies | Cellule photoelectrique de type c-mos a transfert de charge, et capteur matriciel comprenant un ensemble de telles cellules |
FR3027730B1 (fr) | 2014-10-22 | 2017-12-22 | New Imaging Tech | Dispositif d'acquisition d'empreintes digitales |
WO2016090144A1 (fr) * | 2014-12-03 | 2016-06-09 | Robert Bosch Gmbh | Système d'imagerie pour l'imagerie et la récupération d'énergie simultanées |
WO2016112204A1 (fr) | 2015-01-07 | 2016-07-14 | Nayar Shree K | Circuits destinés à des capteurs d'images auto-alimentés |
FR3031623B1 (fr) * | 2015-01-09 | 2018-02-16 | New Imaging Technologies | Capteur matriciel a reponse logarithmique et plage de fonctionnement etendue en temperature |
CN104796634B (zh) * | 2015-04-20 | 2018-02-16 | 中国航天科技集团公司第九研究院第七七一研究所 | 一种用于超大面阵cmos图像传感器的像元偏置电路及控制方法 |
JP7006268B2 (ja) | 2015-06-05 | 2022-01-24 | ソニーグループ株式会社 | 撮像素子、電子機器、並びに、製造装置および方法 |
CN109075753B (zh) * | 2016-04-25 | 2022-04-15 | 三菱电机株式会社 | 半导体集成电路、传感器读取装置及传感器读取方法 |
US10687003B2 (en) | 2016-08-04 | 2020-06-16 | Omnivision Technologies, Inc. | Linear-logarithmic image sensor |
US9960844B1 (en) * | 2017-03-30 | 2018-05-01 | Xilinx, Inc. | Electrically testing an optical receiver |
FR3084553B1 (fr) | 2018-07-30 | 2020-09-04 | New Imaging Tech | Capteur optique |
US11196947B2 (en) | 2019-09-17 | 2021-12-07 | New Imaging Technologies | Optical sensor |
CN111142571B (zh) * | 2019-12-19 | 2023-05-05 | 杭州友邦演艺设备有限公司 | 一种舞台灯朝向识别方法 |
KR102301243B1 (ko) * | 2020-06-15 | 2021-09-13 | 주식회사 스틸리언 | 화이트박스 암호를 이용한 데이터 암호화/복호화 방법 및 장치 |
CN114323270B (zh) * | 2021-12-23 | 2023-12-05 | 武汉华星光电半导体显示技术有限公司 | 主动像素传感器 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05300432A (ja) | 1992-04-24 | 1993-11-12 | Matsushita Electric Ind Co Ltd | イメージセンサ |
JP4174106B2 (ja) | 1998-08-31 | 2008-10-29 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像装置 |
US6542190B1 (en) * | 1999-01-12 | 2003-04-01 | Silicon Tough Technology Inc. | Image sensor with function of electronic shutter |
KR100429571B1 (ko) * | 1999-12-28 | 2004-05-03 | 주식회사 하이닉스반도체 | 저전력화 및 화질 개선을 위한 단위 화소 회로 및 판독 회로를 갖는 이미지센서 |
FR2819941B1 (fr) | 2001-01-25 | 2003-06-20 | Get Int | Element photoelectrique a tres grande dynamique de fonctionnement |
JP3890207B2 (ja) * | 2001-06-25 | 2007-03-07 | キヤノン株式会社 | 撮像装置および撮像システム |
JP4551588B2 (ja) * | 2001-07-03 | 2010-09-29 | キヤノン株式会社 | 撮像装置および撮像システム |
US6914227B2 (en) * | 2001-06-25 | 2005-07-05 | Canon Kabushiki Kaisha | Image sensing apparatus capable of outputting image by converting resolution by adding and reading out a plurality of pixels, its control method, and image sensing system |
JP4187502B2 (ja) * | 2002-07-25 | 2008-11-26 | 富士通マイクロエレクトロニクス株式会社 | 画質を向上させたイメージセンサ |
JP4071157B2 (ja) * | 2003-05-27 | 2008-04-02 | セイコーインスツル株式会社 | イメージセンサー |
EP1652307A4 (fr) * | 2003-07-14 | 2006-11-22 | Univ Rochester | Conception de convertisseur analogique / numerique sigma-delta a separation d'entrees multiplexees destinee a la conversion analogique / numerique du niveau de pixels |
TWI264086B (en) * | 2004-06-04 | 2006-10-11 | Via Tech Inc | Method and apparatus for image sensor |
JP2006014316A (ja) * | 2004-06-22 | 2006-01-12 | Samsung Electronics Co Ltd | サブサンプリングされたアナログ信号を平均化する改善された固体撮像素子及びその駆動方法 |
US7616231B2 (en) * | 2005-01-06 | 2009-11-10 | Goodrich Corporation | CMOS active pixel sensor with improved dynamic range and method of operation for object motion detection |
US7220953B2 (en) * | 2005-03-18 | 2007-05-22 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Photodiode circuit with improved response time |
KR100718786B1 (ko) * | 2005-12-29 | 2007-05-16 | 매그나칩 반도체 유한회사 | 시모스 이미지 센서 |
JP2008017288A (ja) * | 2006-07-07 | 2008-01-24 | Rohm Co Ltd | 光電変換回路及びこれを用いた固体撮像装置 |
FR2920590B1 (fr) | 2007-08-28 | 2009-11-20 | New Imaging Technologies Sas | Pixel actif cmos a tres grande dynamique de fonctionnement |
US7876249B2 (en) * | 2009-02-17 | 2011-01-25 | Advis, Inc. | Image sensing system |
FR2943178B1 (fr) * | 2009-03-13 | 2011-08-26 | New Imaging Technologies Sas | Capteur matriciel a faible consommation |
-
2009
- 2009-03-13 FR FR0951596A patent/FR2943178B1/fr active Active
-
2010
- 2010-03-10 EP EP10710668A patent/EP2406944A1/fr not_active Withdrawn
- 2010-03-10 CN CN201080011880.2A patent/CN102379120B/zh not_active Expired - Fee Related
- 2010-03-10 KR KR1020117024094A patent/KR101361743B1/ko active IP Right Grant
- 2010-03-10 US US13/256,351 patent/US8884205B2/en not_active Expired - Fee Related
- 2010-03-10 WO PCT/IB2010/051025 patent/WO2010103464A1/fr active Application Filing
- 2010-03-10 JP JP2011553584A patent/JP5791523B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101361743B1 (ko) | 2014-02-21 |
US20120074299A1 (en) | 2012-03-29 |
JP5791523B2 (ja) | 2015-10-07 |
KR20110125272A (ko) | 2011-11-18 |
CN102379120A (zh) | 2012-03-14 |
FR2943178A1 (fr) | 2010-09-17 |
CN102379120B (zh) | 2014-07-23 |
EP2406944A1 (fr) | 2012-01-18 |
US8884205B2 (en) | 2014-11-11 |
JP2012520599A (ja) | 2012-09-06 |
WO2010103464A1 (fr) | 2010-09-16 |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 8 |
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PLFP | Fee payment |
Year of fee payment: 9 |
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PLFP | Fee payment |
Year of fee payment: 10 |
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PLFP | Fee payment |
Year of fee payment: 12 |
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PLFP | Fee payment |
Year of fee payment: 13 |
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PLFP | Fee payment |
Year of fee payment: 14 |
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PLFP | Fee payment |
Year of fee payment: 15 |
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PLFP | Fee payment |
Year of fee payment: 16 |