FR3027730B1 - Dispositif d'acquisition d'empreintes digitales - Google Patents

Dispositif d'acquisition d'empreintes digitales

Info

Publication number
FR3027730B1
FR3027730B1 FR1460155A FR1460155A FR3027730B1 FR 3027730 B1 FR3027730 B1 FR 3027730B1 FR 1460155 A FR1460155 A FR 1460155A FR 1460155 A FR1460155 A FR 1460155A FR 3027730 B1 FR3027730 B1 FR 3027730B1
Authority
FR
France
Prior art keywords
acquiring digital
digital impressions
impressions
acquiring
digital
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1460155A
Other languages
English (en)
Other versions
FR3027730A1 (fr
Inventor
Yang Ni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Imaging Technologies SAS
Original Assignee
New Imaging Technologies SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Imaging Technologies SAS filed Critical New Imaging Technologies SAS
Priority to FR1460155A priority Critical patent/FR3027730B1/fr
Priority to EP15786904.1A priority patent/EP3210162A1/fr
Priority to PCT/EP2015/074521 priority patent/WO2016062822A1/fr
Priority to US15/520,810 priority patent/US20170316244A1/en
Priority to CN201580057299.7A priority patent/CN107078146A/zh
Publication of FR3027730A1 publication Critical patent/FR3027730A1/fr
Application granted granted Critical
Publication of FR3027730B1 publication Critical patent/FR3027730B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14678—Contact-type imagers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Human Computer Interaction (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Image Input (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR1460155A 2014-10-22 2014-10-22 Dispositif d'acquisition d'empreintes digitales Expired - Fee Related FR3027730B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1460155A FR3027730B1 (fr) 2014-10-22 2014-10-22 Dispositif d'acquisition d'empreintes digitales
EP15786904.1A EP3210162A1 (fr) 2014-10-22 2015-10-22 Dispositif d'acquisition d'empreintes digitales
PCT/EP2015/074521 WO2016062822A1 (fr) 2014-10-22 2015-10-22 Dispositif d'acquisition d'empreintes digitales
US15/520,810 US20170316244A1 (en) 2014-10-22 2015-10-22 Device for acquiring digital fingerprints
CN201580057299.7A CN107078146A (zh) 2014-10-22 2015-10-22 用于获取数字指纹的设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1460155A FR3027730B1 (fr) 2014-10-22 2014-10-22 Dispositif d'acquisition d'empreintes digitales

Publications (2)

Publication Number Publication Date
FR3027730A1 FR3027730A1 (fr) 2016-04-29
FR3027730B1 true FR3027730B1 (fr) 2017-12-22

Family

ID=52627305

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1460155A Expired - Fee Related FR3027730B1 (fr) 2014-10-22 2014-10-22 Dispositif d'acquisition d'empreintes digitales

Country Status (5)

Country Link
US (1) US20170316244A1 (fr)
EP (1) EP3210162A1 (fr)
CN (1) CN107078146A (fr)
FR (1) FR3027730B1 (fr)
WO (1) WO2016062822A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105956584A (zh) * 2016-06-30 2016-09-21 京东方科技集团股份有限公司 指纹识别模组及其制作方法和驱动方法、显示装置
US10332929B2 (en) * 2016-09-07 2019-06-25 Mei-Yen Lee Integrated sensing module and integrated sensing assembly using the same
KR102430318B1 (ko) * 2017-06-21 2022-08-10 삼성디스플레이 주식회사 표시 장치 및 그의 동작 방법
CN109585596B (zh) * 2017-09-29 2020-09-15 致伸科技股份有限公司 光学指纹感测单元及其制造方法、触控屏幕
CN107728979A (zh) * 2017-09-30 2018-02-23 联想(北京)有限公司 一种处理方法及电子设备
US10777122B2 (en) * 2017-12-27 2020-09-15 Lg Display Co., Ltd. Electroluminescence display device and driving method thereof
KR101944059B1 (ko) * 2018-04-19 2019-01-30 실리콘 디스플레이 (주) 광학 모드 및 정전 용량 모드에 따라 동작하는 센서 화소 및 이를 포함하는 이미지 센서
CN110443204A (zh) * 2018-10-11 2019-11-12 神盾股份有限公司 发光信号强度控制方法及电子装置
CN113163087B (zh) * 2020-07-23 2022-11-08 神盾股份有限公司 影像感测装置及其曝光时间调整方法
KR20220031402A (ko) 2020-09-04 2022-03-11 삼성전자주식회사 전자 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259108B1 (en) * 1998-10-09 2001-07-10 Kinetic Sciences Inc. Fingerprint image optical input apparatus
FR2819941B1 (fr) * 2001-01-25 2003-06-20 Get Int Element photoelectrique a tres grande dynamique de fonctionnement
JP2003006627A (ja) 2001-06-18 2003-01-10 Nec Corp 指紋入力装置
JP3858263B2 (ja) * 2001-11-09 2006-12-13 日本電気株式会社 指紋画像入力装置及びそれを用いた電子機器
TWI243339B (en) * 2002-03-19 2005-11-11 Casio Computer Co Ltd Image reading apparatus and drive control method
US20060102974A1 (en) 2004-11-12 2006-05-18 Chen Neng C Contact image capturing structure
US20070076923A1 (en) * 2005-10-05 2007-04-05 Aimgene Technology Co., Ltd. Press-trigger fingerprint sensor module
US7859526B2 (en) * 2006-05-01 2010-12-28 Konicek Jeffrey C Active matrix emissive display and optical scanner system, methods and applications
FR2920590B1 (fr) * 2007-08-28 2009-11-20 New Imaging Technologies Sas Pixel actif cmos a tres grande dynamique de fonctionnement
JP4466707B2 (ja) * 2007-09-27 2010-05-26 ミツミ電機株式会社 指離れ検出装置、指離れ検出方法及びこれを用いた指紋読取装置、指紋読取方法
FR2943178B1 (fr) 2009-03-13 2011-08-26 New Imaging Technologies Sas Capteur matriciel a faible consommation
US9632344B2 (en) * 2010-07-09 2017-04-25 Lester F. Ludwig Use of LED or OLED array to implement integrated combinations of touch screen tactile, touch gesture sensor, color image display, hand-image gesture sensor, document scanner, secure optical data exchange, and fingerprint processing capabilities
CN104051368A (zh) * 2014-07-01 2014-09-17 苏州晶方半导体科技股份有限公司 指纹识别芯片封装结构和封装方法

Also Published As

Publication number Publication date
CN107078146A (zh) 2017-08-18
US20170316244A1 (en) 2017-11-02
EP3210162A1 (fr) 2017-08-30
FR3027730A1 (fr) 2016-04-29
WO2016062822A1 (fr) 2016-04-28

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