FR2779870B1 - Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procede pour la fabrication de ce detecteur et de cette photodiode - Google Patents

Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procede pour la fabrication de ce detecteur et de cette photodiode

Info

Publication number
FR2779870B1
FR2779870B1 FR9910601A FR9910601A FR2779870B1 FR 2779870 B1 FR2779870 B1 FR 2779870B1 FR 9910601 A FR9910601 A FR 9910601A FR 9910601 A FR9910601 A FR 9910601A FR 2779870 B1 FR2779870 B1 FR 2779870B1
Authority
FR
France
Prior art keywords
detector
photodiode
manufacturing
type
cmos image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9910601A
Other languages
English (en)
Other versions
FR2779870A1 (fr
Inventor
Yang Woodward
Ju Il Lee
Nan Yi Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19534037&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FR2779870(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of FR2779870A1 publication Critical patent/FR2779870A1/fr
Application granted granted Critical
Publication of FR2779870B1 publication Critical patent/FR2779870B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
FR9910601A 1998-02-28 1999-08-18 Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procede pour la fabrication de ce detecteur et de cette photodiode Expired - Fee Related FR2779870B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19980006687 1998-02-28

Publications (2)

Publication Number Publication Date
FR2779870A1 FR2779870A1 (fr) 1999-12-17
FR2779870B1 true FR2779870B1 (fr) 2005-05-13

Family

ID=19534037

Family Applications (2)

Application Number Title Priority Date Filing Date
FR9902509A Expired - Lifetime FR2775541B1 (fr) 1998-02-28 1999-03-01 Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procedes pour la fabrication de ce detecteur et de cette photodiode
FR9910601A Expired - Fee Related FR2779870B1 (fr) 1998-02-28 1999-08-18 Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procede pour la fabrication de ce detecteur et de cette photodiode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR9902509A Expired - Lifetime FR2775541B1 (fr) 1998-02-28 1999-03-01 Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procedes pour la fabrication de ce detecteur et de cette photodiode

Country Status (9)

Country Link
US (2) US6180969B1 (fr)
JP (1) JP4390896B2 (fr)
KR (1) KR100278285B1 (fr)
CN (2) CN100377362C (fr)
DE (1) DE19908457B4 (fr)
FR (2) FR2775541B1 (fr)
GB (1) GB2334817B (fr)
NL (2) NL1011381C2 (fr)
TW (1) TW457644B (fr)

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FR2779870A1 (fr) 1999-12-17
GB2334817B (en) 2003-07-30
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