FR2399772A1 - Dispositif de formation d'image a semi-conducteur - Google Patents

Dispositif de formation d'image a semi-conducteur

Info

Publication number
FR2399772A1
FR2399772A1 FR7822663A FR7822663A FR2399772A1 FR 2399772 A1 FR2399772 A1 FR 2399772A1 FR 7822663 A FR7822663 A FR 7822663A FR 7822663 A FR7822663 A FR 7822663A FR 2399772 A1 FR2399772 A1 FR 2399772A1
Authority
FR
France
Prior art keywords
type
semiconductor
horizontal
impurity layers
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7822663A
Other languages
English (en)
Other versions
FR2399772B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2399772A1 publication Critical patent/FR2399772A1/fr
Application granted granted Critical
Publication of FR2399772B1 publication Critical patent/FR2399772B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Dispositif de formation d'image à semi-conducteur qui comprend plusieurs éléments de conversion photoélectrique excités par des circuits d'analyse horizontale et verticale et des transistors de commutation horizontale et verticale formée dans la plus grande partie d'une région de surface d'un semi-conducteur de type N ou P. Ce dispositif de formation d'image à semi-conducteur est caractérisé en ce que plusieurs couches d'impuretés de type P ou N isolées l'une de l'autre sont formées dans la région superficielle du semi-conducteur, les transistors de commutation et les éléments de conversion photoélectrique sont intégrés dans une des couches d'impuretés, le circuit d'analyse horizontale dans une autre couche d'impuretés et le circuit d'analyse verticale dans une troisième couche d'impuretés, et les tensions prédéterminées sont appliquées aux électrodes disposées sur les couches respectives d'impuretés.
FR7822663A 1977-08-01 1978-08-01 Dispositif de formation d'image a semi-conducteur Granted FR2399772A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52091362A JPS605108B2 (ja) 1977-08-01 1977-08-01 固体擦像装置

Publications (2)

Publication Number Publication Date
FR2399772A1 true FR2399772A1 (fr) 1979-03-02
FR2399772B1 FR2399772B1 (fr) 1984-07-06

Family

ID=14024260

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7822663A Granted FR2399772A1 (fr) 1977-08-01 1978-08-01 Dispositif de formation d'image a semi-conducteur

Country Status (7)

Country Link
US (1) US4209806A (fr)
JP (1) JPS605108B2 (fr)
CA (1) CA1111131A (fr)
DE (1) DE2833218C2 (fr)
FR (1) FR2399772A1 (fr)
GB (1) GB2002956B (fr)
NL (1) NL7807987A (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017196B2 (ja) * 1978-01-23 1985-05-01 株式会社日立製作所 固体撮像素子
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
JPS5822901B2 (ja) * 1978-12-01 1983-05-12 株式会社日立製作所 固体撮像装置
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
JPS568968A (en) * 1979-07-05 1981-01-29 Matsushita Electric Ind Co Ltd Solid-state image pickup unit
JPS5630773A (en) * 1979-08-20 1981-03-27 Matsushita Electronics Corp Semiconductor integrated circuit device
DE2936704A1 (de) * 1979-09-11 1981-03-26 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung mit einem zweidimensionalen bildsensor
WO1981001927A1 (fr) * 1979-12-09 1981-07-09 Commw Scient Ind Res Org Appareil et procede de traitement de signaux
FR2487566A1 (fr) * 1980-07-25 1982-01-29 Thomson Csf Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice
US4712137A (en) * 1981-07-20 1987-12-08 Xerox Corporation High density CCD imager
US4432017A (en) * 1981-07-20 1984-02-14 Xerox Corporation Adjacent bilinear photosite imager
DE3138294A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit steuerung oder regelung der integrationszeit
JPS58125872A (ja) * 1982-01-21 1983-07-27 Nec Corp 電荷結合素子
JPS58171850A (ja) * 1982-03-31 1983-10-08 Sony Corp 固体撮像素子
JPS58177086A (ja) * 1982-04-10 1983-10-17 Sony Corp 固体撮像素子
EP0105386B1 (fr) * 1982-04-17 1986-10-08 Sony Corporation Element de prise de vues a semi-conducteurs
JPS58211677A (ja) * 1982-06-02 1983-12-09 Nissan Motor Co Ltd 光レ−ダ装置
JPS60111568A (ja) * 1983-11-21 1985-06-18 Fuji Photo Film Co Ltd 放射線画像情報読取装置
JPS60115260A (ja) * 1983-11-28 1985-06-21 Nec Corp 固体撮像装置とその使用方法
JPS60161664A (ja) * 1984-02-01 1985-08-23 Sharp Corp 密着型二次元画像読取装置
US4602290A (en) * 1984-03-26 1986-07-22 Fuji Photo Film Co., Ltd. MOS-type image sensor with branch readout
JPS6228423U (fr) * 1985-08-05 1987-02-20
JPH04484Y2 (fr) * 1986-09-10 1992-01-09
JP2642750B2 (ja) * 1988-10-20 1997-08-20 キヤノン株式会社 半導体装置及びそれを搭載した信号処理装置
JPH03163813A (ja) * 1989-08-25 1991-07-15 Elna Co Ltd 電子部品および電子部品連

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2304234A1 (fr) * 1975-03-10 1976-10-08 Matsushita Electronics Corp Dispositif d'imagerie a etat solide

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL155155B (nl) * 1968-04-23 1977-11-15 Philips Nv Inrichting voor het omzetten van een fysisch patroon in een elektrisch signaal als functie van de tijd, daarmede uitgevoerde televisiecamera, alsmede halfgeleiderinrichting voor toepassing daarin.
JPS5226974B2 (fr) * 1973-02-14 1977-07-18
FR2288373A1 (fr) * 1974-10-18 1976-05-14 Thomson Csf Dispositif image a transfert de charges
US4052229A (en) * 1976-06-25 1977-10-04 Intel Corporation Process for preparing a substrate for mos devices of different thresholds
US4055836A (en) * 1976-08-26 1977-10-25 Rca Corporation Charge transfer readout circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2304234A1 (fr) * 1975-03-10 1976-10-08 Matsushita Electronics Corp Dispositif d'imagerie a etat solide

Also Published As

Publication number Publication date
GB2002956A (en) 1979-02-28
FR2399772B1 (fr) 1984-07-06
US4209806A (en) 1980-06-24
CA1111131A (fr) 1981-10-20
GB2002956B (en) 1982-06-16
DE2833218C2 (de) 1982-11-04
NL7807987A (nl) 1979-02-05
DE2833218A1 (de) 1979-02-08
JPS5427311A (en) 1979-03-01
JPS605108B2 (ja) 1985-02-08

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