FR2399772B1 - - Google Patents
Info
- Publication number
- FR2399772B1 FR2399772B1 FR7822663A FR7822663A FR2399772B1 FR 2399772 B1 FR2399772 B1 FR 2399772B1 FR 7822663 A FR7822663 A FR 7822663A FR 7822663 A FR7822663 A FR 7822663A FR 2399772 B1 FR2399772 B1 FR 2399772B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52091362A JPS605108B2 (ja) | 1977-08-01 | 1977-08-01 | 固体擦像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2399772A1 FR2399772A1 (fr) | 1979-03-02 |
FR2399772B1 true FR2399772B1 (fr) | 1984-07-06 |
Family
ID=14024260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7822663A Granted FR2399772A1 (fr) | 1977-08-01 | 1978-08-01 | Dispositif de formation d'image a semi-conducteur |
Country Status (7)
Country | Link |
---|---|
US (1) | US4209806A (fr) |
JP (1) | JPS605108B2 (fr) |
CA (1) | CA1111131A (fr) |
DE (1) | DE2833218C2 (fr) |
FR (1) | FR2399772A1 (fr) |
GB (1) | GB2002956B (fr) |
NL (1) | NL7807987A (fr) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6017196B2 (ja) * | 1978-01-23 | 1985-05-01 | 株式会社日立製作所 | 固体撮像素子 |
FR2433871A1 (fr) * | 1978-08-18 | 1980-03-14 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
JPS5822901B2 (ja) * | 1978-12-01 | 1983-05-12 | 株式会社日立製作所 | 固体撮像装置 |
JPS5850030B2 (ja) * | 1979-03-08 | 1983-11-08 | 日本放送協会 | 光電変換装置およびそれを用いた固体撮像板 |
JPS568968A (en) * | 1979-07-05 | 1981-01-29 | Matsushita Electric Ind Co Ltd | Solid-state image pickup unit |
JPS5630773A (en) * | 1979-08-20 | 1981-03-27 | Matsushita Electronics Corp | Semiconductor integrated circuit device |
DE2936704A1 (de) * | 1979-09-11 | 1981-03-26 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte schaltung mit einem zweidimensionalen bildsensor |
AU6578280A (en) * | 1979-12-09 | 1981-07-22 | Commonwealth Scientific And Industrial Research Organisation | Signal processing apparatus and method |
FR2487566A1 (fr) * | 1980-07-25 | 1982-01-29 | Thomson Csf | Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice |
US4432017A (en) * | 1981-07-20 | 1984-02-14 | Xerox Corporation | Adjacent bilinear photosite imager |
US4712137A (en) * | 1981-07-20 | 1987-12-08 | Xerox Corporation | High density CCD imager |
DE3138294A1 (de) * | 1981-09-25 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler halbleiter-bildsensor mit steuerung oder regelung der integrationszeit |
JPS58125872A (ja) * | 1982-01-21 | 1983-07-27 | Nec Corp | 電荷結合素子 |
JPS58171850A (ja) * | 1982-03-31 | 1983-10-08 | Sony Corp | 固体撮像素子 |
JPS58177086A (ja) * | 1982-04-10 | 1983-10-17 | Sony Corp | 固体撮像素子 |
EP0105386B1 (fr) * | 1982-04-17 | 1986-10-08 | Sony Corporation | Element de prise de vues a semi-conducteurs |
JPS58211677A (ja) * | 1982-06-02 | 1983-12-09 | Nissan Motor Co Ltd | 光レ−ダ装置 |
JPS60111568A (ja) * | 1983-11-21 | 1985-06-18 | Fuji Photo Film Co Ltd | 放射線画像情報読取装置 |
JPS60115260A (ja) * | 1983-11-28 | 1985-06-21 | Nec Corp | 固体撮像装置とその使用方法 |
JPS60161664A (ja) * | 1984-02-01 | 1985-08-23 | Sharp Corp | 密着型二次元画像読取装置 |
US4602290A (en) * | 1984-03-26 | 1986-07-22 | Fuji Photo Film Co., Ltd. | MOS-type image sensor with branch readout |
JPS6228423U (fr) * | 1985-08-05 | 1987-02-20 | ||
JPH04484Y2 (fr) * | 1986-09-10 | 1992-01-09 | ||
JP2642750B2 (ja) * | 1988-10-20 | 1997-08-20 | キヤノン株式会社 | 半導体装置及びそれを搭載した信号処理装置 |
JPH03163813A (ja) * | 1989-08-25 | 1991-07-15 | Elna Co Ltd | 電子部品および電子部品連 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL155155B (nl) * | 1968-04-23 | 1977-11-15 | Philips Nv | Inrichting voor het omzetten van een fysisch patroon in een elektrisch signaal als functie van de tijd, daarmede uitgevoerde televisiecamera, alsmede halfgeleiderinrichting voor toepassing daarin. |
JPS5226974B2 (fr) * | 1973-02-14 | 1977-07-18 | ||
FR2288373A1 (fr) * | 1974-10-18 | 1976-05-14 | Thomson Csf | Dispositif image a transfert de charges |
JPS5310433B2 (fr) * | 1975-03-10 | 1978-04-13 | ||
US4052229A (en) * | 1976-06-25 | 1977-10-04 | Intel Corporation | Process for preparing a substrate for mos devices of different thresholds |
US4055836A (en) * | 1976-08-26 | 1977-10-25 | Rca Corporation | Charge transfer readout circuits |
-
1977
- 1977-08-01 JP JP52091362A patent/JPS605108B2/ja not_active Expired
-
1978
- 1978-07-27 US US05/928,734 patent/US4209806A/en not_active Expired - Lifetime
- 1978-07-27 NL NL787807987A patent/NL7807987A/xx unknown
- 1978-07-28 DE DE2833218A patent/DE2833218C2/de not_active Expired
- 1978-07-28 CA CA308,326A patent/CA1111131A/fr not_active Expired
- 1978-07-31 GB GB7831662A patent/GB2002956B/en not_active Expired
- 1978-08-01 FR FR7822663A patent/FR2399772A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
GB2002956A (en) | 1979-02-28 |
DE2833218C2 (de) | 1982-11-04 |
DE2833218A1 (de) | 1979-02-08 |
JPS605108B2 (ja) | 1985-02-08 |
US4209806A (en) | 1980-06-24 |
FR2399772A1 (fr) | 1979-03-02 |
NL7807987A (nl) | 1979-02-05 |
JPS5427311A (en) | 1979-03-01 |
CA1111131A (fr) | 1981-10-20 |
GB2002956B (en) | 1982-06-16 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |