FR2433868A1 - Dispositif de formation d'image a semi-conducteur - Google Patents

Dispositif de formation d'image a semi-conducteur

Info

Publication number
FR2433868A1
FR2433868A1 FR7920462A FR7920462A FR2433868A1 FR 2433868 A1 FR2433868 A1 FR 2433868A1 FR 7920462 A FR7920462 A FR 7920462A FR 7920462 A FR7920462 A FR 7920462A FR 2433868 A1 FR2433868 A1 FR 2433868A1
Authority
FR
France
Prior art keywords
vertical
analysis
photodiodes
photodiode
image forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7920462A
Other languages
English (en)
Other versions
FR2433868B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2433868A1 publication Critical patent/FR2433868A1/fr
Application granted granted Critical
Publication of FR2433868B1 publication Critical patent/FR2433868B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Description d'un dispositif de formation d'image à semi-conducteur comprenant, sur un même substrat semi-conducteur, une pluralité de photodiodes réparties de façon bi-dimensionnelle, des MOSFET de commutation verticale et horizontale qui choisissent les positions des photodiodes, et des circuits d'analyse verticale et horizontale qui fournissent des impulsions d'analyse pour commander le fonctionnement des MOSFET de commutation verticale et horizontale. L'amélioration apportée à ce dispositif consiste en un circuit à verrouillage fait d'une diode, d un MOSFET ou analogues et disposé entre la photodiode et une ligne d'analyse verticale de l'étage suivant, de manière à ce que les charges en excès débordant la photodiode sont extraites de la ligne d'analyse verticale par l'intermédiaire du circuit à verrouillage, empêchant de ce fait l'apparition d'un flou.
FR7920462A 1978-08-17 1979-08-10 Dispositif de formation d'image a semi-conducteur Granted FR2433868A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11197478 1978-08-17

Publications (2)

Publication Number Publication Date
FR2433868A1 true FR2433868A1 (fr) 1980-03-14
FR2433868B1 FR2433868B1 (fr) 1981-08-14

Family

ID=14574787

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7920462A Granted FR2433868A1 (fr) 1978-08-17 1979-08-10 Dispositif de formation d'image a semi-conducteur

Country Status (6)

Country Link
US (1) US4267469A (fr)
CA (1) CA1124843A (fr)
DE (1) DE2933412C3 (fr)
FR (1) FR2433868A1 (fr)
GB (1) GB2030026B (fr)
NL (1) NL184592C (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4412236A (en) * 1979-08-24 1983-10-25 Hitachi, Ltd. Color solid-state imager
FR2487566A1 (fr) * 1980-07-25 1982-01-29 Thomson Csf Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice
JPS57178479A (en) * 1981-04-27 1982-11-02 Sony Corp Solid image pickup element
DE3138294A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit steuerung oder regelung der integrationszeit
JPS5945779A (ja) * 1982-09-09 1984-03-14 Olympus Optical Co Ltd 固体撮像装置
DE3236073A1 (de) * 1982-09-29 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit einer anordnung zur reduzierung des ueberstrahlens
JPS5963568U (ja) * 1982-10-21 1984-04-26 大日本スクリ−ン製造株式会社 画像走査記録装置における画像信号の検出器
NL8500337A (nl) * 1985-02-07 1986-09-01 Philips Nv Ladingsgekoppelde beeldopneeminrichting.
US4654683A (en) * 1985-08-23 1987-03-31 Eastman Kodak Company Blooming control in CCD image sensors
US6008687A (en) * 1988-08-29 1999-12-28 Hitachi, Ltd. Switching circuit and display device using the same
ATE114390T1 (de) * 1989-09-23 1994-12-15 Vlsi Vision Ltd I.c. sensor.
US5808676A (en) * 1995-01-03 1998-09-15 Xerox Corporation Pixel cells having integrated analog memories and arrays thereof
US6683646B2 (en) * 1997-11-24 2004-01-27 Xerox Corporation CMOS image sensor array having charge spillover protection for photodiodes
US6986216B2 (en) * 2003-04-30 2006-01-17 Esco Corporation Wear assembly for the digging edge of an excavator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715485A (en) * 1971-10-12 1973-02-06 Rca Corp Radiation sensing and signal transfer circuits

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345119A (en) * 1976-10-06 1978-04-22 Hitachi Ltd Solid state pickup element
GB2008889B (en) * 1977-11-07 1982-08-04 Hitachi Ltd Solid state image pickup device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715485A (en) * 1971-10-12 1973-02-06 Rca Corp Radiation sensing and signal transfer circuits

Also Published As

Publication number Publication date
NL184592B (nl) 1989-04-03
US4267469A (en) 1981-05-12
NL7906225A (nl) 1980-02-19
GB2030026A (en) 1980-03-26
NL184592C (nl) 1989-09-01
CA1124843A (fr) 1982-06-01
FR2433868B1 (fr) 1981-08-14
DE2933412A1 (de) 1980-02-21
DE2933412B2 (de) 1981-07-02
DE2933412C3 (de) 1982-03-04
GB2030026B (en) 1982-10-27

Similar Documents

Publication Publication Date Title
FR2433868A1 (fr) Dispositif de formation d'image a semi-conducteur
FR2624304B1 (fr) Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium
NO179492C (no) Festeinnretning med ramme for veggmontasje av sanitærutstyr
FR2593532B1 (fr) Dispositif pour amenager une tranchee essentiellement verticale dans le sol.
ITFI910034A1 (it) Apparecchiatura per analisi immunologiche.
FR2450012A1 (fr) Dispositif du type a l'etat solide pour l'analyse d'images
FR2415398A1 (fr) Dispositif de formation d'image a semi-conducteur
DE3688579D1 (de) Vorrichtung und verfahren zum verarbeiten von frueher verarbeiteten videosignalen.
FR2384151A1 (fr) Dispositif de fixation pour plaquettes de substrat
FR2386964A1 (fr) Appareil de controle de plaquettes de circuit
BE847689A (fr) Armature de decharge et de trop-plein avec cable bowden pour baignoires et analogues,
BE868788A (fr) Dispositif pour la fixation d'elements de commutation de circuit electrique sur un tableau de distribution
JPS57145368A (en) Semiconductor intergrated circuit
EP0179499A3 (fr) Panneau publicitaire amovible pour conteneurs et moyens de transport assimilés
IT1229135B (it) Copolimeri transesterificati dell'anidride maleica, particolarmente utili nel campo della detergenza.
JPS5423387A (en) Semiconductor integrated-circuit device
JPS53109353A (en) Device for installing elevator cage
IT7829521A0 (it) Dispositivo per ordinare la successione di servizio delle chiamate di ascensori.
FR2430130A1 (fr) Circuit generateur de niveaux electrique de reference dans un circuit logique
ES2001551A6 (es) Procedimiento para la realizacion de un rompe viento y dispositio de fijacion y carros para la realizacion de este procedimiento
FR2390850A1 (fr) Dispositif de commande et de reglage pour un moteur asynchrone a courant triphase
JPS53117389A (en) Semiconductor integrated circuit device
BE903573A (fr) Appareil de commande d'un reseau de connexion spatial a plusieurs etages
FR2599952B1 (fr) Dispositif de fixation d'une etagere sur un montant vertical.
FR2676818B1 (fr) Dispositif d'analyse de l'evolution de l'etat de surface d'au moins un substrat metallique en cours de decapage.

Legal Events

Date Code Title Description
ST Notification of lapse