FR2415398A1 - Dispositif de formation d'image a semi-conducteur - Google Patents
Dispositif de formation d'image a semi-conducteurInfo
- Publication number
- FR2415398A1 FR2415398A1 FR7901200A FR7901200A FR2415398A1 FR 2415398 A1 FR2415398 A1 FR 2415398A1 FR 7901200 A FR7901200 A FR 7901200A FR 7901200 A FR7901200 A FR 7901200A FR 2415398 A1 FR2415398 A1 FR 2415398A1
- Authority
- FR
- France
- Prior art keywords
- transistors
- switching
- field effect
- mis
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 230000005669 field effect Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Dispositif de formation d'image semi-conducteur qui comprend dans une région de surface principale d'un substrat semi-conducteur, des éléments photo-électriques de conversion répartis en ensemble bi-dimensionnel, des transistors MIS (métalisolateur-semi-conducteur) à effet de champ de commutation verticale et de commutation horizontale qui sélectionnent les éléments photo-électriques de conversion, et des circuits d'analyse verticale et horizontale qui ouvrent et ferment les transistors de commutation. Ce dispositif est caractérisé en ce que les transistors MIS à effet de champ de commutation verticale non sélectionnés sont mis dans un état hors-circuit plus profond, c'est-à-dire que les régions de surface principale du substrat semi-conducteur correspondant aux électrodes de commande de ces transistors MIS à effet de champ de commutation verticale sont mises en niveau d'accumulation.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53005224A JPS6017196B2 (ja) | 1978-01-23 | 1978-01-23 | 固体撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2415398A1 true FR2415398A1 (fr) | 1979-08-17 |
FR2415398B1 FR2415398B1 (fr) | 1984-07-20 |
Family
ID=11605214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7901200A Granted FR2415398A1 (fr) | 1978-01-23 | 1979-01-18 | Dispositif de formation d'image a semi-conducteur |
Country Status (7)
Country | Link |
---|---|
US (1) | US4223330A (fr) |
JP (1) | JPS6017196B2 (fr) |
CA (1) | CA1129081A (fr) |
DE (1) | DE2901735C2 (fr) |
FR (1) | FR2415398A1 (fr) |
GB (1) | GB2013026B (fr) |
NL (1) | NL7900496A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2449377A1 (fr) * | 1979-02-19 | 1980-09-12 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5822901B2 (ja) * | 1978-12-01 | 1983-05-12 | 株式会社日立製作所 | 固体撮像装置 |
JPS6033342B2 (ja) * | 1979-06-04 | 1985-08-02 | 株式会社日立製作所 | 固体撮像装置 |
DE3005956A1 (de) * | 1980-02-16 | 1981-09-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Anordnung zur darstellung von bildinhalten mit lichtemittierenden dioden |
DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
DE3138294A1 (de) * | 1981-09-25 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler halbleiter-bildsensor mit steuerung oder regelung der integrationszeit |
US4433343A (en) * | 1981-12-22 | 1984-02-21 | Levine Michael A | Extrinsic infrared detector with dopant site charge-neutralization |
US4727406A (en) * | 1982-02-12 | 1988-02-23 | Rockwell International Corporation | Pre-multiplexed detector array |
US4862237A (en) * | 1983-01-10 | 1989-08-29 | Seiko Epson Corporation | Solid state image sensor |
JP2601271B2 (ja) * | 1987-04-28 | 1997-04-16 | オリンパス光学工業株式会社 | 固体撮像装置 |
JPH03181282A (ja) * | 1989-12-11 | 1991-08-07 | Fuji Photo Film Co Ltd | 固体撮像デバイス |
US5045680A (en) * | 1990-01-18 | 1991-09-03 | International Business Machines Corporation | Integrated circuit optoelectronic toggle F/F |
JPH05267695A (ja) * | 1991-11-06 | 1993-10-15 | Mitsubishi Electric Corp | 赤外線撮像装置 |
US5587596A (en) * | 1995-09-20 | 1996-12-24 | National Semiconductor Corporation | Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range |
JP4200545B2 (ja) | 1998-06-08 | 2008-12-24 | ソニー株式会社 | 固体撮像素子およびその駆動方法、並びにカメラシステム |
US6359293B1 (en) * | 1999-08-17 | 2002-03-19 | Agere Systems Guardian Corp. | Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3931465A (en) * | 1975-01-13 | 1976-01-06 | Rca Corporation | Blooming control for charge coupled imager |
FR2378412A1 (fr) * | 1977-01-24 | 1978-08-18 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteurs |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660667A (en) * | 1970-06-22 | 1972-05-02 | Rca Corp | Image sensor array in which each element employs two phototransistors one of which stores charge |
US3683193A (en) * | 1970-10-26 | 1972-08-08 | Rca Corp | Bucket brigade scanning of sensor array |
JPS5310433B2 (fr) * | 1975-03-10 | 1978-04-13 | ||
JPS5345119A (en) * | 1976-10-06 | 1978-04-22 | Hitachi Ltd | Solid state pickup element |
JPS5389617A (en) * | 1977-01-19 | 1978-08-07 | Hitachi Ltd | Driving method of solid image pickup element |
JPS5396720A (en) * | 1977-02-04 | 1978-08-24 | Hitachi Ltd | Solid image pickup element |
JPS605108B2 (ja) * | 1977-08-01 | 1985-02-08 | 株式会社日立製作所 | 固体擦像装置 |
GB2008889B (en) * | 1977-11-07 | 1982-08-04 | Hitachi Ltd | Solid state image pickup device |
CN1047835C (zh) * | 1994-11-04 | 1999-12-29 | 拜尔公司 | 隔热体 |
-
1978
- 1978-01-23 JP JP53005224A patent/JPS6017196B2/ja not_active Expired
-
1979
- 1979-01-16 CA CA319,704A patent/CA1129081A/fr not_active Expired
- 1979-01-17 DE DE2901735A patent/DE2901735C2/de not_active Expired
- 1979-01-18 FR FR7901200A patent/FR2415398A1/fr active Granted
- 1979-01-22 NL NL7900496A patent/NL7900496A/xx not_active Application Discontinuation
- 1979-01-22 US US06/005,567 patent/US4223330A/en not_active Expired - Lifetime
- 1979-01-22 GB GB792245A patent/GB2013026B/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3931465A (en) * | 1975-01-13 | 1976-01-06 | Rca Corporation | Blooming control for charge coupled imager |
FR2378412A1 (fr) * | 1977-01-24 | 1978-08-18 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteurs |
Non-Patent Citations (1)
Title |
---|
EXBK/76 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2449377A1 (fr) * | 1979-02-19 | 1980-09-12 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
Also Published As
Publication number | Publication date |
---|---|
JPS6017196B2 (ja) | 1985-05-01 |
JPS5498521A (en) | 1979-08-03 |
GB2013026A (en) | 1979-08-01 |
GB2013026B (en) | 1982-05-19 |
FR2415398B1 (fr) | 1984-07-20 |
DE2901735C2 (de) | 1983-10-27 |
DE2901735A1 (de) | 1979-07-26 |
NL7900496A (nl) | 1979-07-25 |
US4223330A (en) | 1980-09-16 |
CA1129081A (fr) | 1982-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |