JPS5630773A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5630773A
JPS5630773A JP10637479A JP10637479A JPS5630773A JP S5630773 A JPS5630773 A JP S5630773A JP 10637479 A JP10637479 A JP 10637479A JP 10637479 A JP10637479 A JP 10637479A JP S5630773 A JPS5630773 A JP S5630773A
Authority
JP
Japan
Prior art keywords
transistors
type
mos transistors
depletion type
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10637479A
Other languages
Japanese (ja)
Inventor
Toru Takamura
Sumio Terakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP10637479A priority Critical patent/JPS5630773A/en
Publication of JPS5630773A publication Critical patent/JPS5630773A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve remarkably an S/N ratio of a semiconductor integrated circuit device by employing a depletion type FET as a signal-passing-switching element for reading information in an IC for reading the information by scanning signals. CONSTITUTION:A plurality of horizontal MOS transistors 3, phototransistors 1 corresponding to the transistors 3, and vertical MOS transistors 2 corresponding thereto are arranged in M rows and N columns along with unit picture elements between horizontal scanning pulse generating means 4, vertical scanning pulse generating means 5, power source 6, video signal output terminal 7, output load resistor 8 and the like to form an optical image detector or memory device. In this configuration a depletion type FET is used as horizontal MOS transistors 3 for passing signal. That is, n<+> type source and drain regions are formed in a P type Si substrate, shallow n<-> type region is formed in the channel region surrounded by these regions, the transistors 3 are of depletion type, and its S/N ratio can be improved by approx. 20dB.
JP10637479A 1979-08-20 1979-08-20 Semiconductor integrated circuit device Pending JPS5630773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10637479A JPS5630773A (en) 1979-08-20 1979-08-20 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10637479A JPS5630773A (en) 1979-08-20 1979-08-20 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5630773A true JPS5630773A (en) 1981-03-27

Family

ID=14431936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10637479A Pending JPS5630773A (en) 1979-08-20 1979-08-20 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5630773A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104259A1 (en) * 1982-03-31 1984-04-04 Sony Corporation Solid-state image pickup element
EP0105383A1 (en) * 1982-04-10 1984-04-18 Sony Corporation Solid-state image pickup element
JPS63136944A (en) * 1986-11-28 1988-06-09 Ozen Corp Miniature dc motor for toys

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427311A (en) * 1977-08-01 1979-03-01 Hitachi Ltd Solid state pickup element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427311A (en) * 1977-08-01 1979-03-01 Hitachi Ltd Solid state pickup element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104259A1 (en) * 1982-03-31 1984-04-04 Sony Corporation Solid-state image pickup element
EP0105383A1 (en) * 1982-04-10 1984-04-18 Sony Corporation Solid-state image pickup element
JPS63136944A (en) * 1986-11-28 1988-06-09 Ozen Corp Miniature dc motor for toys

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