KR920020735A - 고체촬상장치 - Google Patents

고체촬상장치 Download PDF

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Publication number
KR920020735A
KR920020735A KR1019920005726A KR920005726A KR920020735A KR 920020735 A KR920020735 A KR 920020735A KR 1019920005726 A KR1019920005726 A KR 1019920005726A KR 920005726 A KR920005726 A KR 920005726A KR 920020735 A KR920020735 A KR 920020735A
Authority
KR
South Korea
Prior art keywords
imaging device
state imaging
solid state
gate transistor
electrode
Prior art date
Application number
KR1019920005726A
Other languages
English (en)
Inventor
마사하루 하마사끼
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920020735A publication Critical patent/KR920020735A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/441—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음

Description

고체촬상장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 고체촬상장치의 일실시예의 요부를 도시한 회로도.
제2도는 1유니트셀의 구조를 도시한 평면도.
제3도는 1유니트셀의 구조를 도시한 단면도.

Claims (1)

  1. 수평 및 수직방향으로 화소단위로 2차원적으로 배열된 복수개의 포트센서부의 각각이, 게이트전극 및 소스전극이 수직신호선에 공통접속된 피드백게이트트랜지스터 와, 상기 피드백게이트트랜지스터와 직렬 접속되고, 또한 게이트전극이 수평선택선에 접속된 수직선택트랜지스터와, 상기 피드백게이트트랜지스터 및 상기 수직선택트랜지스터의 각 채널영역하에 설치된 광전변환소자로 이루어지는 것을 특징으로 하는 고체촬상장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920005726A 1991-04-10 1992-04-07 고체촬상장치 KR920020735A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-106668 1991-04-10
JP3106668A JPH04313268A (ja) 1991-04-10 1991-04-10 固体撮像装置

Publications (1)

Publication Number Publication Date
KR920020735A true KR920020735A (ko) 1992-11-21

Family

ID=14439458

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920005726A KR920020735A (ko) 1991-04-10 1992-04-07 고체촬상장치

Country Status (3)

Country Link
US (1) US5274459A (ko)
JP (1) JPH04313268A (ko)
KR (1) KR920020735A (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05316438A (ja) * 1992-05-11 1993-11-26 Sony Corp 固体撮像装置
KR970001879B1 (ko) * 1994-03-30 1997-02-18 닛신 고오교오 가부시끼가이샤 차량용 안티록브레이크 제어장치
EP0725535B1 (en) * 1995-02-01 2003-04-23 Canon Kabushiki Kaisha Solid-state image pickup device and method of operating the same
JP3838665B2 (ja) * 1995-08-11 2006-10-25 株式会社 東芝 Ｍｏｓ型固体撮像装置
WO1997017800A1 (en) 1995-11-07 1997-05-15 California Institute Of Technology An image sensor with high dynamic range linear output
JP4035194B2 (ja) * 1996-03-13 2008-01-16 キヤノン株式会社 Ｘ線検出装置及びｘ線検出システム
JP3544084B2 (ja) * 1996-12-10 2004-07-21 シャープ株式会社 増幅型固体撮像装置
JP2000287130A (ja) * 1999-03-31 2000-10-13 Sharp Corp 増幅型固体撮像装置
FR2795586B1 (fr) * 1999-06-23 2002-09-13 Ecole Nale Sup Artes Metiers Dispositif electronique de lecture de pixels notamment pour capteur d'images matriciel a pixels actifs cmos
US6867806B1 (en) * 1999-11-04 2005-03-15 Taiwan Advanced Sensors Corporation Interlace overlap pixel design for high sensitivity CMOS image sensors
US7388183B2 (en) * 2002-08-23 2008-06-17 Micron Technology, Inc. Low dark current pixel with a guard drive active photodiode
JP4154268B2 (ja) 2003-03-27 2008-09-24 キヤノン株式会社 撮像装置
JP4135594B2 (ja) * 2003-08-19 2008-08-20 ソニー株式会社 固体撮像装置
US7247898B2 (en) * 2004-06-15 2007-07-24 Dialog Imaging Systems Gmbh Self adjusting transfer gate APS
JP4485371B2 (ja) * 2005-01-06 2010-06-23 パナソニック株式会社 固体撮像装置
KR100863972B1 (ko) * 2007-09-13 2008-10-16 삼성에스디아이 주식회사 음극선관
US20100123077A1 (en) * 2008-11-18 2010-05-20 Gatan, Inc. Passive pixel direct detection sensor
US20120019496A1 (en) * 2009-03-30 2012-01-26 Sharp Kabushiki Kaisha Optical sensor circuit, display device and method for driving optical sensor circuit
US9735188B2 (en) 2015-01-15 2017-08-15 Hoon Kim Image sensor with solar cell function

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5813079A (ja) * 1981-07-16 1983-01-25 Olympus Optical Co Ltd イメ−ジセンサ
DE3236146A1 (de) * 1982-09-29 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor und verfahren zu seinem betrieb
JPS61128683A (ja) * 1984-11-28 1986-06-16 Hitachi Ltd 固体撮像装置
JPS61214870A (ja) * 1985-03-20 1986-09-24 Mitsubishi Electric Corp 固体撮像装置
JP2510501B2 (ja) * 1985-11-21 1996-06-26 株式会社日立製作所 固体撮像装置
US5016108A (en) * 1987-07-02 1991-05-14 Hitachi, Ltd. Solid-state imaging device having series-connected pairs of switching MOS transistors for transferring signal electric charges therethrough
US4974093A (en) * 1987-12-22 1990-11-27 Fuji Photo Film Co., Ltd. Solid state image-pickup device with expanded dynamic range
JP2539244B2 (ja) * 1988-02-12 1996-10-02 富士通株式会社 二次元撮像装置

Also Published As

Publication number Publication date
JPH04313268A (ja) 1992-11-05
US5274459A (en) 1993-12-28

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