FR2433871A1 - Dispositif de formation d'image a semi-conducteur - Google Patents

Dispositif de formation d'image a semi-conducteur

Info

Publication number
FR2433871A1
FR2433871A1 FR7920464A FR7920464A FR2433871A1 FR 2433871 A1 FR2433871 A1 FR 2433871A1 FR 7920464 A FR7920464 A FR 7920464A FR 7920464 A FR7920464 A FR 7920464A FR 2433871 A1 FR2433871 A1 FR 2433871A1
Authority
FR
France
Prior art keywords
image forming
forming device
substance
photoelectric
semiconductor image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7920464A
Other languages
English (en)
Other versions
FR2433871B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP53100060A external-priority patent/JPS5822899B2/ja
Priority claimed from JP10303179U external-priority patent/JPS5622862U/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2433871A1 publication Critical patent/FR2433871A1/fr
Application granted granted Critical
Publication of FR2433871B1 publication Critical patent/FR2433871B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Dispositif de formation d'image à semi-conducteur comportant une pluralité de parties photoélectriques et un substrat semi-conducteur qui comprend des moyens d'analyse pour choisir les parties photosensibles en série. Les parties photoélectriques comprennent une couche d'une substance photosensible recouvrant le substrat semi-conducteur et une pellicule conductrice transparente recouvrant la couche en substance photoélectrique. Ce dispositif est caractérisé en ce que la substance photosensible est une substance amorphe dont le constituant indispensable est le silicium et qui contient de l'hydrogène dont la teneur se situe entre 5 et 30 % atom., et plus particulièrement entre 10 et 25 % atom.
FR7920464A 1978-08-18 1979-08-10 Dispositif de formation d'image a semi-conducteur Granted FR2433871A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP53100060A JPS5822899B2 (ja) 1978-08-18 1978-08-18 固体撮像装置
JP10303179U JPS5622862U (fr) 1979-07-27 1979-07-27

Publications (2)

Publication Number Publication Date
FR2433871A1 true FR2433871A1 (fr) 1980-03-14
FR2433871B1 FR2433871B1 (fr) 1984-07-20

Family

ID=26441149

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7920464A Granted FR2433871A1 (fr) 1978-08-18 1979-08-10 Dispositif de formation d'image a semi-conducteur

Country Status (6)

Country Link
US (1) US4360821A (fr)
CA (1) CA1134932A (fr)
DE (1) DE2933411A1 (fr)
FR (1) FR2433871A1 (fr)
GB (1) GB2029642B (fr)
NL (1) NL180969C (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0036780A2 (fr) * 1980-03-24 1981-09-30 Hitachi, Ltd. Procédé de fabrication de transducteurs photoélectriques
EP0037244A2 (fr) * 1980-03-26 1981-10-07 Hitachi, Ltd. Procédé de fabrication d'un dispositif de formation d'image semiconducteur utilisant un film photoconducteur
EP0040076A2 (fr) * 1980-05-09 1981-11-18 Hitachi, Ltd. Convertisseur photoélectrique
EP0042773A1 (fr) * 1980-06-24 1981-12-30 Thomson-Csf Procédé de réalisation d'une couche contenant du silicium, et son application aux dispositifs de conversion photoélectrique
FR2490359A1 (fr) * 1980-09-12 1982-03-19 Canon Kk Element photoconducteur
EP0053946A2 (fr) * 1980-12-10 1982-06-16 Fuji Xerox Co., Ltd. Matrice linéaire de lecture en film mince
FR2523371A1 (fr) * 1982-03-10 1983-09-16 Contellec Michel Le Element photoconducteur en carbure de silicium amorphe hydrogene et cellule de retine video utilisant un tel element
EP0242647A2 (fr) * 1980-12-10 1987-10-28 Fuji Xerox Co., Ltd. Matrice linéaire de lecture en film mince

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
US4412236A (en) * 1979-08-24 1983-10-25 Hitachi, Ltd. Color solid-state imager
EP0035146B1 (fr) * 1980-02-15 1988-10-12 Matsushita Electric Industrial Co., Ltd. Dispositif semiconducteur photoélectrique
US4405915A (en) * 1980-03-28 1983-09-20 Canon Kabushiki Kaisha Photoelectric transducing element
JPS56152280A (en) * 1980-04-25 1981-11-25 Hitachi Ltd Light receiving surface
JPS5728368A (en) * 1980-07-28 1982-02-16 Hitachi Ltd Manufacture of semiconductor film
JPS5739588A (en) * 1980-08-22 1982-03-04 Fuji Photo Film Co Ltd Solid state image pickup device
GB2095030B (en) * 1981-01-08 1985-06-12 Canon Kk Photoconductive member
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
US4539283A (en) * 1981-01-16 1985-09-03 Canon Kabushiki Kaisha Amorphous silicon photoconductive member
JPS57132155A (en) * 1981-02-09 1982-08-16 Canon Inc Photoelectric transducer
JPS57177156A (en) * 1981-04-24 1982-10-30 Canon Inc Photoconductive material
US4443813A (en) * 1981-12-15 1984-04-17 Fuji Photo Film Co., Ltd. Solid-state color imager with two layer three story structure
JPS58105672A (ja) * 1981-12-17 1983-06-23 Fuji Photo Film Co Ltd 半導体撮像装置
DE3347997C2 (fr) * 1982-01-06 1991-01-24 Canon K.K., Tokio/Tokyo, Jp
DE3303266A1 (de) * 1982-02-01 1983-08-11 Canon K.K., Tokyo Fotoeleitfaehiges element
US4452875A (en) * 1982-02-15 1984-06-05 Canon Kabushiki Kaisha Amorphous photoconductive member with α-Si interlayers
DE3309240A1 (de) * 1982-03-15 1983-09-22 Canon K.K., Tokyo Fotoleitfaehiges aufzeichnungselement
US4617246A (en) * 1982-11-04 1986-10-14 Canon Kabushiki Kaisha Photoconductive member of a Ge-Si layer and Si layer
JPS59198084A (ja) * 1983-04-26 1984-11-09 Toshiba Corp 固体撮像装置の残像抑制方式
JPS6045057A (ja) * 1983-08-23 1985-03-11 Toshiba Corp 固体撮像装置の製造方法
US4572882A (en) * 1983-09-09 1986-02-25 Canon Kabushiki Kaisha Photoconductive member containing amorphous silicon and germanium
US4579797A (en) * 1983-10-25 1986-04-01 Canon Kabushiki Kaisha Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant
US4763189A (en) * 1984-08-31 1988-08-09 Canon Kabushiki Kaisha Color image sensor with three line sensors on different layers separated by electrically-insulating layers
US4760437A (en) * 1986-01-03 1988-07-26 American Telephone And Telegraph Company, At&T Bell Laboratories Neural networks
US4818651A (en) 1986-02-07 1989-04-04 Canon Kabushiki Kaisha Light receiving member with first layer of A-SiGe(O,N)(H,X) and second layer of A-SiC wherein the first layer has unevenly distributed germanium atoms and both layers contain a conductivity controller
US5101255A (en) * 1987-01-14 1992-03-31 Sachio Ishioka Amorphous photoelectric conversion device with avalanche
EP0542152B1 (fr) * 1991-11-08 1999-07-14 Canon Kabushiki Kaisha Appareil capteur d'images à l'état solide comprenant des couches et méthode de fabrication associée
EP0605972B1 (fr) * 1992-12-14 1999-10-27 Canon Kabushiki Kaisha Elément récepteur de lumière ayant une couche réceptrice de lumière à structure multiple avec une concentration améliorée en atomes d'hydrogène ou/et d'halogène à proximité de l'interface des couches adjacentes
SE520119C2 (sv) * 1998-10-13 2003-05-27 Ericsson Telefon Ab L M Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar
US6501109B1 (en) * 2001-08-29 2002-12-31 Taiwan Semiconductor Manufacturing Company Active CMOS pixel with exponential output based on the GIDL mechanism
JP2005012049A (ja) * 2003-06-20 2005-01-13 Shimadzu Corp 放射線検出器およびそれを備えた放射線撮像装置
JP2008525645A (ja) * 2004-12-27 2008-07-17 日本板硝子株式会社 円筒形揺動シールドターゲットアセンブリおよびその使用方法
US8299510B2 (en) 2007-02-02 2012-10-30 Rohm Co., Ltd. Solid state imaging device and fabrication method for the same
US9257590B2 (en) * 2010-12-20 2016-02-09 Industrial Technology Research Institute Photoelectric element, display unit and method for fabricating the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5130438B1 (fr) * 1970-04-06 1976-09-01
US3699375A (en) * 1971-09-27 1972-10-17 Zenith Radio Corp Image detector including sensor matrix of field effect elements
US3848261A (en) * 1972-06-19 1974-11-12 Trw Inc Mos integrated circuit structure
JPS5926154B2 (ja) 1974-07-05 1984-06-25 株式会社日立製作所 固体撮像装置
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4190851A (en) * 1975-09-17 1980-02-26 Hughes Aircraft Company Monolithic extrinsic silicon infrared detectors with charge coupled device readout
JPS5323224A (en) * 1976-08-16 1978-03-03 Hitachi Ltd Solid pickup unit
US4069492A (en) * 1976-08-23 1978-01-17 Rca Corporation Electroluminescent semiconductor device having a body of amorphous silicon
JPS5941351B2 (ja) * 1976-09-13 1984-10-06 株式会社日立製作所 カラ−用固体撮像素子
JPS5389617A (en) * 1977-01-19 1978-08-07 Hitachi Ltd Driving method of solid image pickup element
US4117506A (en) * 1977-07-28 1978-09-26 Rca Corporation Amorphous silicon photovoltaic device having an insulating layer
JPS605108B2 (ja) * 1977-08-01 1985-02-08 株式会社日立製作所 固体擦像装置
US4147667A (en) * 1978-01-13 1979-04-03 International Business Machines Corporation Photoconductor for GaAs laser addressed devices
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
US4202928A (en) * 1978-07-24 1980-05-13 Rca Corporation Updateable optical storage medium

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/74 *
EXBK/78 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0036780A3 (en) * 1980-03-24 1982-08-04 Hitachi, Ltd. Method of producing photoelectric transducers
EP0036780A2 (fr) * 1980-03-24 1981-09-30 Hitachi, Ltd. Procédé de fabrication de transducteurs photoélectriques
EP0037244A2 (fr) * 1980-03-26 1981-10-07 Hitachi, Ltd. Procédé de fabrication d'un dispositif de formation d'image semiconducteur utilisant un film photoconducteur
EP0037244A3 (en) * 1980-03-26 1982-09-08 Hitachi, Ltd. Method for fabricating a solid-state imaging device using photoconductive film
EP0040076A2 (fr) * 1980-05-09 1981-11-18 Hitachi, Ltd. Convertisseur photoélectrique
EP0040076A3 (en) * 1980-05-09 1982-09-22 Hitachi, Ltd. Photoelectric converter
EP0042773A1 (fr) * 1980-06-24 1981-12-30 Thomson-Csf Procédé de réalisation d'une couche contenant du silicium, et son application aux dispositifs de conversion photoélectrique
US4344984A (en) * 1980-06-24 1982-08-17 Thomson-Csf Process for producing a layer containing silicon
FR2485810A1 (fr) * 1980-06-24 1981-12-31 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede
FR2490359A1 (fr) * 1980-09-12 1982-03-19 Canon Kk Element photoconducteur
EP0053946A2 (fr) * 1980-12-10 1982-06-16 Fuji Xerox Co., Ltd. Matrice linéaire de lecture en film mince
EP0053946A3 (en) * 1980-12-10 1984-07-11 Fuji Xerox Co., Ltd. Elongate thin-film reader
EP0242647A2 (fr) * 1980-12-10 1987-10-28 Fuji Xerox Co., Ltd. Matrice linéaire de lecture en film mince
EP0242647A3 (en) * 1980-12-10 1988-03-02 Fuji Xerox Co., Ltd. Elongate thin-film reader
FR2523371A1 (fr) * 1982-03-10 1983-09-16 Contellec Michel Le Element photoconducteur en carbure de silicium amorphe hydrogene et cellule de retine video utilisant un tel element

Also Published As

Publication number Publication date
NL7906258A (nl) 1980-02-20
CA1134932A (fr) 1982-11-02
GB2029642A (en) 1980-03-19
FR2433871B1 (fr) 1984-07-20
NL180969C (nl) 1987-05-18
DE2933411A1 (de) 1980-03-20
NL180969B (nl) 1986-12-16
GB2029642B (en) 1983-03-02
US4360821A (en) 1982-11-23

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Legal Events

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