DE69610970D1 - Halbleiterbauelement mit Bipolarstruktur und dessen Herstellungsverfahren - Google Patents
Halbleiterbauelement mit Bipolarstruktur und dessen HerstellungsverfahrenInfo
- Publication number
- DE69610970D1 DE69610970D1 DE69610970T DE69610970T DE69610970D1 DE 69610970 D1 DE69610970 D1 DE 69610970D1 DE 69610970 T DE69610970 T DE 69610970T DE 69610970 T DE69610970 T DE 69610970T DE 69610970 D1 DE69610970 D1 DE 69610970D1
- Authority
- DE
- Germany
- Prior art keywords
- production process
- semiconductor component
- bipolar structure
- bipolar
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32189895A JP3325752B2 (ja) | 1995-12-11 | 1995-12-11 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69610970D1 true DE69610970D1 (de) | 2000-12-21 |
DE69610970T2 DE69610970T2 (de) | 2001-06-28 |
Family
ID=18137642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69610970T Expired - Fee Related DE69610970T2 (de) | 1995-12-11 | 1996-07-10 | Halbleiterbauelement mit Bipolarstruktur und dessen Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0779662B1 (de) |
JP (1) | JP3325752B2 (de) |
KR (1) | KR100221800B1 (de) |
DE (1) | DE69610970T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6239466B1 (en) * | 1998-12-04 | 2001-05-29 | General Electric Company | Insulated gate bipolar transistor for zero-voltage switching |
DE10001128C1 (de) * | 2000-01-13 | 2001-09-27 | Infineon Technologies Ag | Halbleiterbauelement |
JP4904625B2 (ja) * | 2001-02-14 | 2012-03-28 | 富士電機株式会社 | 半導体装置 |
DE10207522B4 (de) | 2001-02-23 | 2018-08-02 | Fuji Electric Co., Ltd. | Halbleiterbauelement und Verfahren zu dessen Herstellung |
DE102004005084B4 (de) * | 2004-02-02 | 2013-03-14 | Infineon Technologies Ag | Halbleiterbauelement |
JP2005354031A (ja) * | 2004-05-13 | 2005-12-22 | Mitsubishi Electric Corp | 半導体装置 |
JP4575713B2 (ja) * | 2004-05-31 | 2010-11-04 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JP2006173297A (ja) * | 2004-12-15 | 2006-06-29 | Denso Corp | Igbt |
JP2007184486A (ja) * | 2006-01-10 | 2007-07-19 | Denso Corp | 半導体装置 |
JP5036327B2 (ja) * | 2007-01-23 | 2012-09-26 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP5286706B2 (ja) | 2007-07-10 | 2013-09-11 | 三菱電機株式会社 | 電力用半導体装置とその製造方法 |
JP5609087B2 (ja) * | 2009-12-04 | 2014-10-22 | 富士電機株式会社 | 内燃機関点火装置用半導体装置 |
JP6092760B2 (ja) * | 2013-12-05 | 2017-03-08 | 株式会社豊田中央研究所 | 縦型半導体装置 |
WO2017130416A1 (ja) * | 2016-01-29 | 2017-08-03 | サンケン電気株式会社 | 半導体装置 |
JP2017188569A (ja) | 2016-04-06 | 2017-10-12 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CN110571264B (zh) * | 2019-09-17 | 2023-03-24 | 重庆邮电大学 | 一种具有多通道电流栓的sa-ligbt器件 |
CN118216005A (zh) * | 2022-05-18 | 2024-06-18 | 富士电机株式会社 | 半导体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59219963A (ja) * | 1983-05-30 | 1984-12-11 | Meidensha Electric Mfg Co Ltd | ゲ−トタ−ンオフサイリスタ |
JPH01235272A (ja) * | 1988-03-15 | 1989-09-20 | Matsushita Electric Works Ltd | 半導体装置 |
DE59003052D1 (de) * | 1989-05-18 | 1993-11-18 | Asea Brown Boveri | Halbleiterbauelement. |
JP3081739B2 (ja) * | 1992-10-20 | 2000-08-28 | 三菱電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
-
1995
- 1995-12-11 JP JP32189895A patent/JP3325752B2/ja not_active Expired - Lifetime
-
1996
- 1996-07-10 EP EP96111115A patent/EP0779662B1/de not_active Expired - Lifetime
- 1996-07-10 DE DE69610970T patent/DE69610970T2/de not_active Expired - Fee Related
- 1996-08-02 KR KR1019960032362A patent/KR100221800B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0779662B1 (de) | 2000-11-15 |
EP0779662A3 (de) | 1997-11-05 |
JPH09162398A (ja) | 1997-06-20 |
DE69610970T2 (de) | 2001-06-28 |
EP0779662A2 (de) | 1997-06-18 |
JP3325752B2 (ja) | 2002-09-17 |
KR100221800B1 (ko) | 1999-10-01 |
KR970053278A (ko) | 1997-07-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |