DE69021177D1 - Halbleiteranordnung mit isolierter Gateelektrode. - Google Patents
Halbleiteranordnung mit isolierter Gateelektrode.Info
- Publication number
- DE69021177D1 DE69021177D1 DE69021177T DE69021177T DE69021177D1 DE 69021177 D1 DE69021177 D1 DE 69021177D1 DE 69021177 T DE69021177 T DE 69021177T DE 69021177 T DE69021177 T DE 69021177T DE 69021177 D1 DE69021177 D1 DE 69021177D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- gate electrode
- insulated gate
- insulated
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1314031A JP2994670B2 (ja) | 1989-12-02 | 1989-12-02 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69021177D1 true DE69021177D1 (de) | 1995-08-31 |
DE69021177T2 DE69021177T2 (de) | 1996-01-11 |
Family
ID=18048383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69021177T Expired - Fee Related DE69021177T2 (de) | 1989-12-02 | 1990-11-30 | Halbleiteranordnung mit isolierter Gateelektrode. |
Country Status (4)
Country | Link |
---|---|
US (2) | US6242783B1 (de) |
EP (1) | EP0431855B1 (de) |
JP (1) | JP2994670B2 (de) |
DE (1) | DE69021177T2 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2948985B2 (ja) * | 1992-06-12 | 1999-09-13 | 三菱電機株式会社 | 半導体装置 |
FR2720191B1 (fr) * | 1994-05-18 | 1996-10-18 | Michel Haond | Transistor à effet de champ à grille isolée, et procédé de fabrication correspondant. |
JP3169775B2 (ja) * | 1994-08-29 | 2001-05-28 | 株式会社日立製作所 | 半導体回路、スイッチ及びそれを用いた通信機 |
JPH1127116A (ja) | 1997-07-02 | 1999-01-29 | Tadahiro Omi | 半導体集積回路、電圧コントロールディレイライン、ディレイロックドループ、自己同期パイプライン式デジタルシステム、電圧制御発振器、およびフェーズロックドループ |
US6448615B1 (en) * | 1998-02-26 | 2002-09-10 | Micron Technology, Inc. | Methods, structures, and circuits for transistors with gate-to-body capacitive coupling |
US6107663A (en) * | 1998-03-30 | 2000-08-22 | Micron Technology, Inc. | Circuit and method for gate-body structures in CMOS technology |
US6075272A (en) * | 1998-03-30 | 2000-06-13 | Micron Technology, Inc. | Structure for gated lateral bipolar transistors |
US6049496A (en) * | 1998-03-30 | 2000-04-11 | Micron Technology, Inc. | Circuit and method for low voltage, current sense amplifier |
US6229342B1 (en) | 1998-03-30 | 2001-05-08 | Micron Technology, Inc. | Circuits and method for body contacted and backgated transistors |
US6097065A (en) * | 1998-03-30 | 2000-08-01 | Micron Technology, Inc. | Circuits and methods for dual-gated transistors |
US6104066A (en) | 1998-03-30 | 2000-08-15 | Micron Technology, Inc. | Circuit and method for low voltage, voltage sense amplifier |
US6307235B1 (en) | 1998-03-30 | 2001-10-23 | Micron Technology, Inc. | Another technique for gated lateral bipolar transistors |
US6218701B1 (en) * | 1999-04-30 | 2001-04-17 | Intersil Corporation | Power MOS device with increased channel width and process for forming same |
US6483156B1 (en) * | 2000-03-16 | 2002-11-19 | International Business Machines Corporation | Double planar gated SOI MOSFET structure |
US20020011612A1 (en) * | 2000-07-31 | 2002-01-31 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
US6960806B2 (en) * | 2001-06-21 | 2005-11-01 | International Business Machines Corporation | Double gated vertical transistor with different first and second gate materials |
US6800905B2 (en) * | 2001-12-14 | 2004-10-05 | International Business Machines Corporation | Implanted asymmetric doped polysilicon gate FinFET |
US20040036131A1 (en) * | 2002-08-23 | 2004-02-26 | Micron Technology, Inc. | Electrostatic discharge protection devices having transistors with textured surfaces |
JP4355807B2 (ja) * | 2002-08-28 | 2009-11-04 | 独立行政法人産業技術総合研究所 | 二重ゲート型mos電界効果トランジスタ及びその作製方法 |
JP2004214413A (ja) | 2002-12-27 | 2004-07-29 | Toshiba Corp | 半導体装置 |
KR100471189B1 (ko) * | 2003-02-19 | 2005-03-10 | 삼성전자주식회사 | 수직채널을 갖는 전계효과 트랜지스터 및 그 제조방법 |
JP4108537B2 (ja) * | 2003-05-28 | 2008-06-25 | 富士雄 舛岡 | 半導体装置 |
JP2005086024A (ja) * | 2003-09-09 | 2005-03-31 | Toshiba Corp | 半導体装置及びその製造方法 |
US6855588B1 (en) * | 2003-10-07 | 2005-02-15 | United Microelectronics Corp. | Method of fabricating a double gate MOSFET device |
KR100577562B1 (ko) * | 2004-02-05 | 2006-05-08 | 삼성전자주식회사 | 핀 트랜지스터 형성방법 및 그에 따른 구조 |
US7122412B2 (en) * | 2004-04-30 | 2006-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a necked FINFET device |
US20050263801A1 (en) * | 2004-05-27 | 2005-12-01 | Jae-Hyun Park | Phase-change memory device having a barrier layer and manufacturing method |
JP2006013303A (ja) * | 2004-06-29 | 2006-01-12 | Toshiba Corp | 半導体装置及びその製造方法 |
CN100570890C (zh) * | 2004-07-01 | 2009-12-16 | 精工电子有限公司 | 使用沟槽结构的横向半导体器件及其制造方法 |
JP5110776B2 (ja) * | 2004-07-01 | 2012-12-26 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
KR100585178B1 (ko) * | 2005-02-05 | 2006-05-30 | 삼성전자주식회사 | 금속 게이트 전극을 가지는 FinFET을 포함하는반도체 소자 및 그 제조방법 |
KR100680958B1 (ko) * | 2005-02-23 | 2007-02-09 | 주식회사 하이닉스반도체 | 피모스 트랜지스터의 제조방법 |
CN100428414C (zh) * | 2005-04-15 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | 形成低应力多层金属化结构和无铅焊料端电极的方法 |
US7053490B1 (en) | 2005-07-27 | 2006-05-30 | Semiconductor Manufacturing International (Shanghai) Corporation | Planar bond pad design and method of making the same |
KR100669353B1 (ko) * | 2005-10-14 | 2007-01-16 | 삼성전자주식회사 | 비휘발성 기억소자 및 그 형성방법 |
JP5172264B2 (ja) * | 2007-10-01 | 2013-03-27 | 株式会社東芝 | 半導体装置 |
JP5553276B2 (ja) * | 2013-02-26 | 2014-07-16 | 国立大学法人東北大学 | 相補型mis装置の製造方法 |
EP2889906B1 (de) * | 2013-12-30 | 2019-02-20 | IMEC vzw | Verbesserungen an oder im Zusammenhang mit elektrostatischem Entladungsschutz |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54136275A (en) | 1978-04-14 | 1979-10-23 | Agency Of Ind Science & Technol | Field effect transistor of isolation gate |
US4393391A (en) * | 1980-06-16 | 1983-07-12 | Supertex, Inc. | Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area |
FR2526586B1 (fr) * | 1982-05-04 | 1985-11-08 | Efcis | Transistor a effet de champ a grille profonde et procede de fabrication |
JPH077826B2 (ja) * | 1983-08-25 | 1995-01-30 | 忠弘 大見 | 半導体集積回路 |
DE3570557D1 (en) * | 1984-11-27 | 1989-06-29 | American Telephone & Telegraph | Trench transistor |
JP2582794B2 (ja) * | 1987-08-10 | 1997-02-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
SE461490B (sv) * | 1987-08-24 | 1990-02-19 | Asea Ab | Mos-transistor utbildad paa ett isolerande underlag |
JP2579954B2 (ja) | 1987-09-25 | 1997-02-12 | 株式会社東芝 | Mosトランジスタ |
JPH0214578A (ja) | 1988-07-01 | 1990-01-18 | Fujitsu Ltd | 半導体装置 |
US5115289A (en) * | 1988-11-21 | 1992-05-19 | Hitachi, Ltd. | Semiconductor device and semiconductor memory device |
US5331197A (en) * | 1991-04-23 | 1994-07-19 | Canon Kabushiki Kaisha | Semiconductor memory device including gate electrode sandwiching a channel region |
-
1989
- 1989-12-02 JP JP1314031A patent/JP2994670B2/ja not_active Expired - Lifetime
-
1990
- 1990-11-30 DE DE69021177T patent/DE69021177T2/de not_active Expired - Fee Related
- 1990-11-30 EP EP90313070A patent/EP0431855B1/de not_active Expired - Lifetime
-
1993
- 1993-09-27 US US08/126,757 patent/US6242783B1/en not_active Expired - Fee Related
-
1995
- 1995-04-14 US US08/421,931 patent/US6316813B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6316813B1 (en) | 2001-11-13 |
US6242783B1 (en) | 2001-06-05 |
DE69021177T2 (de) | 1996-01-11 |
JP2994670B2 (ja) | 1999-12-27 |
EP0431855A1 (de) | 1991-06-12 |
JPH03245573A (ja) | 1991-11-01 |
EP0431855B1 (de) | 1995-07-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |