DE3782748D1 - Feldeffekttransistor mit isoliertem gate. - Google Patents
Feldeffekttransistor mit isoliertem gate.Info
- Publication number
- DE3782748D1 DE3782748D1 DE8787100813T DE3782748T DE3782748D1 DE 3782748 D1 DE3782748 D1 DE 3782748D1 DE 8787100813 T DE8787100813 T DE 8787100813T DE 3782748 T DE3782748 T DE 3782748T DE 3782748 D1 DE3782748 D1 DE 3782748D1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- insulated gate
- insulated
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11898—Input and output buffer/driver structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61027431A JPH07112064B2 (ja) | 1986-02-10 | 1986-02-10 | 絶縁ゲート電界効果型トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3782748D1 true DE3782748D1 (de) | 1993-01-07 |
DE3782748T2 DE3782748T2 (de) | 1993-05-13 |
Family
ID=12220917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787100813T Expired - Lifetime DE3782748T2 (de) | 1986-02-10 | 1987-01-21 | Feldeffekttransistor mit isoliertem gate. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4821084A (de) |
EP (1) | EP0234276B1 (de) |
JP (1) | JPH07112064B2 (de) |
KR (1) | KR900003839B1 (de) |
DE (1) | DE3782748T2 (de) |
GR (1) | GR880300016T1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5200637A (en) * | 1988-12-15 | 1993-04-06 | Kabushiki Kaisha Toshiba | MOS transistor and differential amplifier circuit with low offset |
JPH0379059A (ja) * | 1989-08-22 | 1991-04-04 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH07112067B2 (ja) * | 1990-01-24 | 1995-11-29 | 株式会社東芝 | 半導体装置 |
US5412239A (en) * | 1993-05-14 | 1995-05-02 | Siliconix Incorporated | Contact geometry for improved lateral MOSFET |
US5355008A (en) * | 1993-11-19 | 1994-10-11 | Micrel, Inc. | Diamond shaped gate mesh for cellular MOS transistor array |
JP2800884B2 (ja) * | 1995-10-27 | 1998-09-21 | 日本電気株式会社 | 横型dsaパワーmosfetを備えた半導体装置 |
US6084266A (en) * | 1998-03-02 | 2000-07-04 | Vanguard International Semiconductor Corporation | Layout of semiconductor devices to increase the packing density of a wafer |
US6713823B1 (en) * | 2002-03-08 | 2004-03-30 | Volterra Semiconductor Corporation | Conductive routings in integrated circuits |
US7012020B2 (en) * | 2003-09-12 | 2006-03-14 | Taiwan Semiconductor Manufacturing Co. Ltd. | Multi-layered metal routing technique |
JP4800017B2 (ja) * | 2005-11-25 | 2011-10-26 | エルピーダメモリ株式会社 | 半導体記憶装置 |
US20090072314A1 (en) * | 2007-09-19 | 2009-03-19 | Texas Instruments Incorporated | Depletion Mode Field Effect Transistor for ESD Protection |
US8169081B1 (en) | 2007-12-27 | 2012-05-01 | Volterra Semiconductor Corporation | Conductive routings in integrated circuits using under bump metallization |
US9029866B2 (en) | 2009-08-04 | 2015-05-12 | Gan Systems Inc. | Gallium nitride power devices using island topography |
US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
KR20120041237A (ko) | 2009-08-04 | 2012-04-30 | 갠 시스템즈 인크. | 아일랜드 매트릭스 갈륨 나이트라이드 마이크로파 및 전력 트랜지스터 |
JP2011159755A (ja) * | 2010-01-29 | 2011-08-18 | Sanyo Electric Co Ltd | 半導体装置 |
AU2011241423A1 (en) * | 2010-04-13 | 2012-11-08 | Gan Systems Inc. | High density gallium nitride devices using island topology |
US9553048B1 (en) * | 2015-09-04 | 2017-01-24 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method of semiconductor device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4015278A (en) * | 1974-11-26 | 1977-03-29 | Fujitsu Ltd. | Field effect semiconductor device |
US4152714A (en) * | 1978-01-16 | 1979-05-01 | Honeywell Inc. | Semiconductor apparatus |
JPS6053085A (ja) * | 1983-09-02 | 1985-03-26 | Hitachi Ltd | 接合形電界効果トランジスタ |
US4603341A (en) * | 1983-09-08 | 1986-07-29 | International Business Machines Corporation | Stacked double dense read only memory |
JPS6092667A (ja) * | 1983-10-27 | 1985-05-24 | Fujitsu Ltd | Mis型トランジスタ |
JPS60145655A (ja) * | 1984-01-09 | 1985-08-01 | Toshiba Corp | 半導体記憶装置 |
JPS60241257A (ja) * | 1984-05-16 | 1985-11-30 | Hitachi Ltd | リ−ド・オンリ−・メモリ |
US4636825A (en) * | 1985-10-04 | 1987-01-13 | Fairchild Semiconductor Corporation | Distributed field effect transistor structure |
-
1986
- 1986-02-10 JP JP61027431A patent/JPH07112064B2/ja not_active Expired - Lifetime
-
1987
- 1987-01-21 DE DE8787100813T patent/DE3782748T2/de not_active Expired - Lifetime
- 1987-01-21 EP EP87100813A patent/EP0234276B1/de not_active Expired - Lifetime
- 1987-01-21 US US07/005,668 patent/US4821084A/en not_active Expired - Lifetime
- 1987-02-10 KR KR1019870001084A patent/KR900003839B1/ko not_active IP Right Cessation
-
1988
- 1988-05-20 GR GR88300016T patent/GR880300016T1/el unknown
Also Published As
Publication number | Publication date |
---|---|
US4821084A (en) | 1989-04-11 |
JPS62185373A (ja) | 1987-08-13 |
EP0234276A2 (de) | 1987-09-02 |
EP0234276B1 (de) | 1992-11-25 |
EP0234276A3 (en) | 1988-07-13 |
KR900003839B1 (ko) | 1990-06-02 |
JPH07112064B2 (ja) | 1995-11-29 |
KR870008395A (ko) | 1987-09-26 |
GR880300016T1 (en) | 1988-10-18 |
DE3782748T2 (de) | 1993-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3686971D1 (de) | Lateraler transistor mit isoliertem gate mit latch-up-festigkeit. | |
DE3679971D1 (de) | Modulationsdotierter feldeffekttransistor. | |
DE3856480D1 (de) | MOS-Feldeffekt-Transistor mit Leitfähigkeitsmodulation | |
DE69027832D1 (de) | Feld-Effekt-Transistor mit Gate-Abstandsstück | |
DE69021177D1 (de) | Halbleiteranordnung mit isolierter Gateelektrode. | |
DE3684400D1 (de) | Verteilte feldeffekttransistorstruktur. | |
DE3382717D1 (de) | Torschaltung mit Feldeffekt- und Bipolartransistoren. | |
DE3788525D1 (de) | Feldeffekttransistoranordnungen. | |
DE3856545D1 (de) | Halbleiterbauelement mit isoliertem Gatter | |
DE3768854D1 (de) | Lateraltransistor. | |
DE3583119D1 (de) | Bipolartransistor mit heterouebergang. | |
DE3689433D1 (de) | Feldeffekttransistor. | |
DE3782748D1 (de) | Feldeffekttransistor mit isoliertem gate. | |
DE3854677D1 (de) | Komplementäre Feldeffekttransistorstruktur. | |
DE3381069D1 (de) | Feldeffekttransistor mit modulierter beweglichkeit. | |
DE3751098D1 (de) | Feldeffekttransistor. | |
DE3689782D1 (de) | Anordnung mit isoliertem Gate. | |
DE68923629D1 (de) | MIS Bauelement mit zusätzlichem Gate. | |
DE3576612D1 (de) | Halbleiteranordnung mit mos-transistoren. | |
DE3689931D1 (de) | Schnell schaltende laterale Transistoren mit isoliertem Gate. | |
DE3882304D1 (de) | Mikrowellentransistor mit doppelheterouebergang. | |
DE3683597D1 (de) | Torschaltung. | |
DE3860836D1 (de) | Bipolarer transistor mit heterouebergang. | |
DE3677141D1 (de) | Feldeffekttransistoranordnung. | |
DE3855533D1 (de) | Halbleiteranordnung mit isoliertem Gate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP T |