DE3584799D1 - Halbleitervorrichtung. - Google Patents

Halbleitervorrichtung.

Info

Publication number
DE3584799D1
DE3584799D1 DE8585107441T DE3584799T DE3584799D1 DE 3584799 D1 DE3584799 D1 DE 3584799D1 DE 8585107441 T DE8585107441 T DE 8585107441T DE 3584799 T DE3584799 T DE 3584799T DE 3584799 D1 DE3584799 D1 DE 3584799D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585107441T
Other languages
English (en)
Inventor
Alan Bicksler Fowler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3584799D1 publication Critical patent/DE3584799D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8585107441T 1984-06-29 1985-06-19 Halbleitervorrichtung. Expired - Fee Related DE3584799D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/626,499 US4550330A (en) 1984-06-29 1984-06-29 Semiconductor interferometer

Publications (1)

Publication Number Publication Date
DE3584799D1 true DE3584799D1 (de) 1992-01-16

Family

ID=24510621

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585107441T Expired - Fee Related DE3584799D1 (de) 1984-06-29 1985-06-19 Halbleitervorrichtung.

Country Status (4)

Country Link
US (1) US4550330A (de)
EP (1) EP0170023B1 (de)
JP (1) JPS6118182A (de)
DE (1) DE3584799D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942437A (en) * 1986-04-22 1990-07-17 International Business Machines Corporation Electron tuned quantum well device
JPS62254469A (ja) * 1986-04-22 1987-11-06 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 量子ウエル装置
JP2550375B2 (ja) * 1987-12-28 1996-11-06 株式会社日立製作所 半導体装置
US4977435A (en) * 1987-10-30 1990-12-11 Hitachi, Ltd. Semiconductor device with a split conduction channel
CA1315865C (en) * 1988-02-09 1993-04-06 Elyahou Kapon Semiconductor super lattice heterostructure fabrication methods, structures and devices
JPH0226077A (ja) * 1988-07-15 1990-01-29 Fujitsu Ltd 半導体機能素子
US5130766A (en) * 1988-08-04 1992-07-14 Fujitsu Limited Quantum interference type semiconductor device
US5497015A (en) * 1988-11-12 1996-03-05 Sony Corporation Quantum interference transistor
US4982248A (en) * 1989-01-11 1991-01-01 International Business Machines Corporation Gated structure for controlling fluctuations in mesoscopic structures
EP0381591A3 (de) * 1989-02-03 1991-09-04 Fujitsu Limited Halbleiteranordnung mit Quanten-Interferenz-Effekt
DE59010851D1 (de) * 1989-04-27 1998-11-12 Max Planck Gesellschaft Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
EP0394757B1 (de) * 1989-04-27 1998-10-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
EP0416198A1 (de) * 1989-08-30 1991-03-13 International Business Machines Corporation Elektronenwellenablenkung in modulationsdotierten und anderen dotierten Halbleiterstrukturen
US5426311A (en) * 1989-12-18 1995-06-20 International Business Machines Corporation Solid-state variable-conductance device
JP3194941B2 (ja) * 1990-03-19 2001-08-06 富士通株式会社 半導体装置
US5385865A (en) * 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
EP0471288B1 (de) * 1990-08-09 2002-02-13 Canon Kabushiki Kaisha Anordnungen zum Kuppeln oder Entkuppeln von Elektronenwellen und Anordnungen mit Quanten-Interferenz-Effekt
SE468694B (sv) * 1991-06-28 1993-03-01 Ericsson Telefon Ab L M Kvantvaagledande elektronisk omkopplare
EP0537889A2 (de) * 1991-10-14 1993-04-21 Fujitsu Limited Halbleiteranordnung mit Quanten-Interferenz-Effekt und Verfahren zu ihrer Herstellung
JP2546128B2 (ja) * 1993-04-09 1996-10-23 日本電気株式会社 電子波干渉素子
US5903010A (en) * 1997-10-29 1999-05-11 Hewlett-Packard Company Quantum wire switch and switching method
US6687447B2 (en) 2001-04-30 2004-02-03 Agilent Technologies, Inc. Stub-tuned photonic crystal waveguide
US7547907B2 (en) * 2004-12-29 2009-06-16 Intel Corporation Non-blocking switch having carbon nanostructures and Mach-Zehnder interferometer
US20110140088A1 (en) * 2009-10-20 2011-06-16 Christopher Search Phase coherent solid state electron gyroscope array
JP6289856B2 (ja) 2013-10-16 2018-03-07 株式会社東芝 ガス遮断器
CA2976395C (en) 2015-02-20 2023-04-11 Forta Corporation Compositions and methods for the introduction of elastomeric reinforcement fibers in asphalt cement concrete

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4205329A (en) * 1976-03-29 1980-05-27 Bell Telephone Laboratories, Incorporated Periodic monolayer semiconductor structures grown by molecular beam epitaxy
US4111521A (en) * 1977-01-21 1978-09-05 Xerox Corporation Semiconductor light reflector/light transmitter
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
DE3072175D1 (de) * 1979-12-28 1990-04-26 Fujitsu Ltd Halbleitervorrichtungen mit heterouebergang.
FR2489045A1 (fr) * 1980-08-20 1982-02-26 Thomson Csf Transistor a effet de champ gaas a memoire non volatile

Also Published As

Publication number Publication date
EP0170023B1 (de) 1991-12-04
US4550330A (en) 1985-10-29
EP0170023A3 (en) 1989-08-23
EP0170023A2 (de) 1986-02-05
JPH0431194B2 (de) 1992-05-25
JPS6118182A (ja) 1986-01-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee