DE3588041D1 - Lichtlöschbare Thyristor-Vorrichtung. - Google Patents

Lichtlöschbare Thyristor-Vorrichtung.

Info

Publication number
DE3588041D1
DE3588041D1 DE3588041T DE3588041T DE3588041D1 DE 3588041 D1 DE3588041 D1 DE 3588041D1 DE 3588041 T DE3588041 T DE 3588041T DE 3588041 T DE3588041 T DE 3588041T DE 3588041 D1 DE3588041 D1 DE 3588041D1
Authority
DE
Germany
Prior art keywords
light
thyristor device
erasable
erasable thyristor
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3588041T
Other languages
English (en)
Other versions
DE3588041T2 (de
Inventor
Jun-Ichi Nishizawa
Takashige Tamamushi
Ken-Ichi Nonaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE3588041D1 publication Critical patent/DE3588041D1/de
Application granted granted Critical
Publication of DE3588041T2 publication Critical patent/DE3588041T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
DE3588041T 1984-03-22 1985-03-21 Lichtlöschbare Thyristor-Vorrichtung. Expired - Fee Related DE3588041T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59054937A JPH0779159B2 (ja) 1984-03-22 1984-03-22 光トリガ・光クエンチ可能なサイリスタ装置

Publications (2)

Publication Number Publication Date
DE3588041D1 true DE3588041D1 (de) 1995-08-24
DE3588041T2 DE3588041T2 (de) 1996-01-18

Family

ID=12984544

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3588041T Expired - Fee Related DE3588041T2 (de) 1984-03-22 1985-03-21 Lichtlöschbare Thyristor-Vorrichtung.

Country Status (5)

Country Link
US (1) US5017991A (de)
EP (1) EP0158186B1 (de)
JP (1) JPH0779159B2 (de)
CA (1) CA1302521C (de)
DE (1) DE3588041T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2659931B2 (ja) 1985-06-29 1997-09-30 財団法人 半導体研究振興会 光制御電力変換装置
CH670528A5 (de) * 1986-03-20 1989-06-15 Bbc Brown Boveri & Cie
JPS6384066A (ja) * 1986-09-26 1988-04-14 Semiconductor Res Found 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法
US5814841A (en) * 1988-03-18 1998-09-29 Nippon Sheet Glass Co., Ltd. Self-scanning light-emitting array
DE58903790D1 (de) * 1988-08-19 1993-04-22 Asea Brown Boveri Abschaltbares halbleiterbauelement.
JPH02109366A (ja) * 1988-10-18 1990-04-23 Yazaki Corp 集積化光トリガ・光クエンチ静電誘導サイリスタ
JPH0723968Y2 (ja) * 1989-06-26 1995-05-31 矢崎総業株式会社 集積化光トリガ・光クエンチ静電誘導サイリスタ
DE69034136T2 (de) * 1989-08-31 2005-01-20 Denso Corp., Kariya Bipolarer transistor mit isolierter steuerelektrode
JPH04115992U (ja) * 1991-03-28 1992-10-15 新明和工業株式会社 貨物自動車の荷箱
JP3023858B2 (ja) * 1991-03-29 2000-03-21 矢崎総業株式会社 光静電誘導サイリスタの駆動回路
JPH0793426B2 (ja) * 1992-04-07 1995-10-09 東洋電機製造株式会社 静電誘導バッファ構造を有する半導体素子
JPH0779147A (ja) * 1993-07-12 1995-03-20 Yazaki Corp 光ｓｉサイリスタ駆動回路及びその保護回路
CN1191394A (zh) * 1997-02-20 1998-08-26 杨泰和 藉前置光－电转换元件驱动的绝缘栅双极晶体管
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch
US6218682B1 (en) * 1997-09-19 2001-04-17 Optiswitch Technology Corporation Optically controlled thyristor
DE19909105A1 (de) 1999-03-02 2000-09-14 Siemens Ag Symmetrischer Thyristor mit verringerter Dicke und Herstellungsverfahren dafür
US7075593B2 (en) * 2003-03-26 2006-07-11 Video Display Corporation Electron-beam-addressed active-matrix spatial light modulator
US7057214B2 (en) * 2003-07-01 2006-06-06 Optiswitch Technology Corporation Light-activated semiconductor switches
US7582917B2 (en) * 2006-03-10 2009-09-01 Bae Systems Information And Electronic Systems Integration Inc. Monolithically integrated light-activated thyristor and method
US8536617B2 (en) * 2011-12-16 2013-09-17 General Electric Company Optically triggered semiconductor device and method for making the same
JP2012109601A (ja) * 2012-02-01 2012-06-07 Ngk Insulators Ltd 半導体装置
US9633998B2 (en) 2012-09-13 2017-04-25 General Electric Company Semiconductor device and method for making the same
US9735188B2 (en) * 2015-01-15 2017-08-15 Hoon Kim Image sensor with solar cell function
EP3430723A4 (de) * 2016-03-15 2019-03-06 Ideal Power Inc. Doppelbasisverbundene bipolare transistoren mit passiven komponenten zum schutz vor versehentlichem einschalten
CN105811963B (zh) * 2016-03-16 2019-01-01 西安电炉研究所有限公司 电子放大式晶闸管驱动器及其控制方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3708672A (en) * 1971-03-29 1973-01-02 Honeywell Inf Systems Solid state relay using photo-coupled isolators
JPS5320885A (en) * 1976-08-11 1978-02-25 Semiconductor Res Found Electrostatic induction type semiconductor device
JPS5437461A (en) * 1977-08-29 1979-03-19 Hitachi Ltd Optical coupling switch circuit
JPS54112157A (en) * 1978-02-23 1979-09-01 Hitachi Ltd Control circuit for field effect thyristor
JPS5524406A (en) * 1978-08-09 1980-02-21 Hitachi Ltd Photosemiconductor switch circuit
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
JPS55151825A (en) * 1979-05-15 1980-11-26 Mitsubishi Electric Corp Electromagnetic wave coupled semiconductor switch device
DE2922301C2 (de) * 1979-05-31 1985-04-25 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
JPS5640537A (en) * 1979-09-12 1981-04-16 Toyoda Gosei Co Ltd Vulcanization of tubular body
JPS60819B2 (ja) * 1979-09-28 1985-01-10 株式会社日立製作所 半導体スイツチ回路
JPS57183128A (en) * 1981-05-06 1982-11-11 Hitachi Ltd Optically driven electronic switch
JPH077844B2 (ja) * 1981-11-30 1995-01-30 財団法人半導体研究振興会 静電誘導型半導体光電変換装置
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ

Also Published As

Publication number Publication date
EP0158186A3 (en) 1988-06-22
CA1302521C (en) 1992-06-02
JPS60198779A (ja) 1985-10-08
JPH0779159B2 (ja) 1995-08-23
EP0158186B1 (de) 1995-07-19
EP0158186A2 (de) 1985-10-16
DE3588041T2 (de) 1996-01-18
US5017991A (en) 1991-05-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee