DE3672360D1 - Verbindungshalbleiterbauelement. - Google Patents
Verbindungshalbleiterbauelement.Info
- Publication number
- DE3672360D1 DE3672360D1 DE8686103425T DE3672360T DE3672360D1 DE 3672360 D1 DE3672360 D1 DE 3672360D1 DE 8686103425 T DE8686103425 T DE 8686103425T DE 3672360 T DE3672360 T DE 3672360T DE 3672360 D1 DE3672360 D1 DE 3672360D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor component
- connecting semiconductor
- component
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5202185A JPS61210675A (ja) | 1985-03-15 | 1985-03-15 | 化合物半導体装置 |
JP5202485A JPS61210678A (ja) | 1985-03-15 | 1985-03-15 | 化合物半導体装置 |
JP5202285A JPS61210676A (ja) | 1985-03-15 | 1985-03-15 | 化合物半導体装置 |
JP5202385A JPS61210677A (ja) | 1985-03-15 | 1985-03-15 | 化合物半導体装置 |
JP11932885A JPS61278168A (ja) | 1985-05-31 | 1985-05-31 | 化合物半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3672360D1 true DE3672360D1 (de) | 1990-08-09 |
Family
ID=27522983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686103425T Expired - Fee Related DE3672360D1 (de) | 1985-03-15 | 1986-03-14 | Verbindungshalbleiterbauelement. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0196517B1 (de) |
KR (1) | KR860007745A (de) |
AU (1) | AU577934B2 (de) |
CA (1) | CA1256590A (de) |
DE (1) | DE3672360D1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0783108B2 (ja) * | 1986-07-25 | 1995-09-06 | 株式会社日立製作所 | 半導体装置 |
US4812886A (en) * | 1987-02-09 | 1989-03-14 | International Business Machines Corporation | Multilayer contact apparatus and method |
WO1992017908A1 (en) * | 1991-03-28 | 1992-10-15 | Asahi Kasei Kogyo Kabushiki Kaisha | Field effect transistor |
US6150680A (en) * | 1998-03-05 | 2000-11-21 | Welch Allyn, Inc. | Field effect semiconductor device having dipole barrier |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1614574A1 (de) * | 1967-08-04 | 1970-10-29 | Siemens Ag | Halbleiterbauelement,insbesondere Halbleiterbauelement mit pn-UEbergang |
BE793800A (fr) * | 1972-01-10 | 1973-05-02 | Rca Corp | Dispositif semiconducteur et son procede de fabrication |
US4032951A (en) * | 1976-04-13 | 1977-06-28 | Bell Telephone Laboratories, Incorporated | Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses |
US4136350A (en) * | 1977-07-14 | 1979-01-23 | Bell Telephone Laboratories, Incorporated | Epitaxial growth of dissimilar materials |
-
1986
- 1986-03-13 CA CA000504069A patent/CA1256590A/en not_active Expired
- 1986-03-14 DE DE8686103425T patent/DE3672360D1/de not_active Expired - Fee Related
- 1986-03-14 EP EP86103425A patent/EP0196517B1/de not_active Expired - Lifetime
- 1986-03-14 AU AU54742/86A patent/AU577934B2/en not_active Ceased
- 1986-03-15 KR KR1019860001897A patent/KR860007745A/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
AU577934B2 (en) | 1988-10-06 |
KR860007745A (ko) | 1986-10-17 |
CA1256590A (en) | 1989-06-27 |
AU5474286A (en) | 1986-09-18 |
EP0196517A1 (de) | 1986-10-08 |
EP0196517B1 (de) | 1990-07-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |