DE3679108D1 - Halbleiteranordnungen. - Google Patents

Halbleiteranordnungen.

Info

Publication number: DE3679108D1
Authority: DE; Germany
Prior art keywords: semiconductor arrangements; arrangements; semiconductor
Prior art date: 1985-06-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8686200991T

Other languages

English (en)

Inventor

Stephen John C O Mullard Mundy

John Martin C O Philip Shannon

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Gloeilampenfabrieken NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-06-10

Filing date

1986-06-09

Publication date

1991-06-13

1986-06-09 Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV

1991-06-13 Application granted granted Critical

1991-06-13 Publication of DE3679108D1 publication Critical patent/DE3679108D1/de

2006-06-10 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Electrodes Of Semiconductors (AREA)

DE8686200991T 1985-06-10 1986-06-09 Halbleiteranordnungen. Expired - Lifetime DE3679108D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB08514628A GB2176339A (en)	1985-06-10	1985-06-10	Semiconductor device with schottky junctions

Publications (1)

Publication Number	Publication Date
DE3679108D1 true DE3679108D1 (de)	1991-06-13

Family

ID=10580473

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8686200991T Expired - Lifetime DE3679108D1 (de)	1985-06-10	1986-06-09	Halbleiteranordnungen.

Country Status (5)

Country	Link
US (1)	US4862229A (de)
EP (1)	EP0205217B1 (de)
JP (1)	JPH0734479B2 (de)
DE (1)	DE3679108D1 (de)
GB (1)	GB2176339A (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5027166A (en) *	1987-12-04	1991-06-25	Sanken Electric Co., Ltd.	High voltage, high speed Schottky semiconductor device and method of fabrication
JPH0817229B2 (ja) *	1988-03-31	1996-02-21	サンケン電気株式会社	半導体装置
JPH0618276B2 (ja) *	1988-11-11	1994-03-09	サンケン電気株式会社	半導体装置
CH676402A5 (en) *	1988-11-29	1991-01-15	Asea Brown Boveri	Solid state pinch diode - has three zone structure with channel form and schottky electrode regions
JP2667477B2 (ja) *	1988-12-02	1997-10-27	株式会社東芝	ショットキーバリアダイオード
JP2513010B2 (ja) *	1988-12-27	1996-07-03	日本電気株式会社	半導体集積回路の入力保護装置
JPH0750791B2 (ja) *	1989-09-20	1995-05-31	株式会社日立製作所	半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機
US5256889A (en) *	1989-09-20	1993-10-26	Hitachi, Ltd.	Semiconductor rectifying diode with PN geometry
JP2829067B2 (ja) *	1989-12-11	1998-11-25	株式会社東芝	半導体装置
JPH065736B2 (ja) *	1989-12-15	1994-01-19	株式会社東芝	ショットキー・ダイオード
JP2590284B2 (ja) *	1990-02-28	1997-03-12	株式会社日立製作所	半導体装置及びその製造方法
US5278443A (en) *	1990-02-28	1994-01-11	Hitachi, Ltd.	Composite semiconductor device with Schottky and pn junctions
US5262669A (en) *	1991-04-19	1993-11-16	Shindengen Electric Manufacturing Co., Ltd.	Semiconductor rectifier having high breakdown voltage and high speed operation
JP2809253B2 (ja) *	1992-10-02	1998-10-08	富士電機株式会社	注入制御型ショットキーバリア整流素子
DE19737360C1 (de) *	1997-08-27	1999-01-21	Siemens Ag	Hochfrequenzdiode und Verfahren zu deren Herstellung
DE19740195C2 (de) *	1997-09-12	1999-12-02	Siemens Ag	Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
US6066884A (en) *	1999-03-19	2000-05-23	Lucent Technologies Inc.	Schottky diode guard ring structures
US6717229B2 (en)	2000-01-19	2004-04-06	Fabtech, Inc.	Distributed reverse surge guard
WO2001054197A1 (en) *	2000-01-19	2001-07-26	Fabtech, Inc.	Distributed reverse surge guard
US6699775B2 (en) *	2000-02-22	2004-03-02	International Rectifier Corporation	Manufacturing process for fast recovery diode
US6486524B1 (en) *	2000-02-22	2002-11-26	International Rectifier Corporation	Ultra low Irr fast recovery diode
US6525389B1 (en) *	2000-02-22	2003-02-25	International Rectifier Corporation	High voltage termination with amorphous silicon layer below the field plate
DE10015884A1 (de) *	2000-03-30	2001-10-11	Philips Corp Intellectual Pty	Schottky-Diode
US6653707B1 (en) *	2000-09-08	2003-11-25	Northrop Grumman Corporation	Low leakage Schottky diode
US6462393B2 (en)	2001-03-20	2002-10-08	Fabtech, Inc.	Schottky device
US20020195613A1 (en) *	2001-04-02	2002-12-26	International Rectifier Corp.	Low cost fast recovery diode and process of its manufacture
US6740951B2 (en) *	2001-05-22	2004-05-25	General Semiconductor, Inc.	Two-mask trench schottky diode
DE102004056663A1 (de) *	2004-11-24	2006-06-01	Robert Bosch Gmbh	Halbleitereinrichtung und Gleichrichteranordnung
JP4803211B2 (ja) *	2008-05-27	2011-10-26	トヨタ自動車株式会社	半導体装置
TW201034205A (en) *	2009-03-04	2010-09-16	Actron Technology Corp	Rectifier used in high temperature application
US9263598B2 (en) *	2014-02-14	2016-02-16	Semiconductor Components Industries, Llc	Schottky device and method of manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4463366A (en) *	1980-06-20	1984-07-31	Nippon Telegraph & Telephone Public Corp.	Field effect transistor with combination Schottky-junction gate
GB2151844A (en) *	1983-12-20	1985-07-24	Philips Electronic Associated	Semiconductor devices
JPS60143496A (ja) *	1983-12-29	1985-07-29	Fujitsu Ltd	半導体記憶装置
US4670764A (en) *	1984-06-08	1987-06-02	Eaton Corporation	Multi-channel power JFET with buried field shaping regions

1985
- 1985-06-10 GB GB08514628A patent/GB2176339A/en not_active Withdrawn
1986
- 1986-06-09 DE DE8686200991T patent/DE3679108D1/de not_active Expired - Lifetime
- 1986-06-09 JP JP61131991A patent/JPH0734479B2/ja not_active Expired - Lifetime
- 1986-06-09 EP EP19860200991 patent/EP0205217B1/de not_active Expired
1989
- 1989-02-06 US US07/309,017 patent/US4862229A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
GB8514628D0 (en)	1985-07-10
US4862229A (en)	1989-08-29
EP0205217A3 (en)	1988-01-13
JPH0734479B2 (ja)	1995-04-12
JPS61287266A (ja)	1986-12-17
GB2176339A (en)	1986-12-17
EP0205217B1 (de)	1991-05-08
EP0205217A2 (de)	1986-12-17

Legal Events

Date	Code	Title	Description
1992-06-04	8364	No opposition during term of opposition
1995-06-22	8327	Change in the person/name/address of the patent owner	Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL
1999-08-12	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3684557D1 (de)	1992-04-30	Waferintegrierte halbleiteranordnung.
DE3683316D1 (de)	1992-02-20	Halbleiteranordnung.
DE3679108D1 (de)	1991-06-13	Halbleiteranordnungen.
DE3671570D1 (de)	1990-06-28	Soi-typ-halbleiteranordnung.
DE3481957D1 (de)	1990-05-17	Halbleiteranordnung.
DE3650613D1 (de)	1997-05-22	Halbleiteranordnung
DE3583302D1 (de)	1991-08-01	Halbleiteranordnung.
DE3650012D1 (de)	1994-09-08	Halbleitervorrichtung.
DE3685612D1 (de)	1992-07-16	Mehrschicht-halbleiteranordnung.
NL189326C (nl)	1993-03-01	Halfgeleiderinrichting.
DE3683492D1 (de)	1992-02-27	Reinraum.
DE3676867D1 (de)	1991-02-21	Halbleiterlaser.
DE3686994D1 (de)	1992-11-26	Halbleiterspeicher.
DE3688064D1 (de)	1993-04-22	Halbleitervorrichtung.
DE3667879D1 (de)	1990-02-01	Halbleiteranordnung.
DE3584799D1 (de)	1992-01-16	Halbleitervorrichtung.
DE3582653D1 (de)	1991-05-29	Halbleiteranordnung.
DE3674959D1 (de)	1990-11-22	Halbleiterlaser.
DE3684184D1 (de)	1992-04-16	Verkapselte halbleiteranordnung.
DE3680774D1 (de)	1991-09-12	Integriertes halbleiterbauelement.
DE3682421D1 (de)	1991-12-19	Feldeffekt-halbleiteranordnung.
DE3687102D1 (de)	1992-12-17	Halbleiterlaser.
DE3581370D1 (de)	1991-02-21	Halbleitervorrichtung.
DE3688002D1 (de)	1993-04-22	Halbleiter-laser.
DE3680265D1 (de)	1991-08-22	Halbleiterschaltungsanordnung.