DE3583115D1 - Halbleiterspeichervorrichtung. - Google Patents
Halbleiterspeichervorrichtung.Info
- Publication number
- DE3583115D1 DE3583115D1 DE8585402209T DE3583115T DE3583115D1 DE 3583115 D1 DE3583115 D1 DE 3583115D1 DE 8585402209 T DE8585402209 T DE 8585402209T DE 3583115 T DE3583115 T DE 3583115T DE 3583115 D1 DE3583115 D1 DE 3583115D1
- Authority
- DE
- Germany
- Prior art keywords
- storage device
- semiconductor storage
- semiconductor
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24120584 | 1984-11-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3583115D1 true DE3583115D1 (de) | 1991-07-11 |
Family
ID=17070763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585402209T Expired - Fee Related DE3583115D1 (de) | 1984-11-15 | 1985-11-15 | Halbleiterspeichervorrichtung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4695978A (de) |
EP (1) | EP0182712B1 (de) |
JP (1) | JPS61267994A (de) |
KR (1) | KR900006221B1 (de) |
DE (1) | DE3583115D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62192086A (ja) * | 1986-02-18 | 1987-08-22 | Matsushita Electronics Corp | 半導体記憶装置 |
DE3683056D1 (de) * | 1986-08-11 | 1992-01-30 | Philips Nv | Integrierter halbleiterspeicher und integrierter signalprozessor mit solchem speicher. |
US5014242A (en) * | 1987-12-10 | 1991-05-07 | Hitachi, Ltd. | Semiconductor device for a ram disposed on chip so as to minimize distances of signal paths between the logic circuits and memory circuit |
US5195053A (en) * | 1989-08-30 | 1993-03-16 | Nec Corporation | Semiconductor memory device wired to accommodate increased capacity without increasing the size of the semiconductor memory device |
JPH07114259B2 (ja) * | 1989-10-19 | 1995-12-06 | 株式会社東芝 | 半導体記憶装置 |
JP2894635B2 (ja) * | 1990-11-30 | 1999-05-24 | 株式会社東芝 | 半導体記憶装置 |
KR930008310B1 (ko) * | 1991-02-05 | 1993-08-27 | 삼성전자 주식회사 | 반도체 메모리장치의 워드라인드라이버단 배치방법 |
US5675501A (en) * | 1994-03-15 | 1997-10-07 | Kabushiki Kaisha Toshiba | Method of designing semiconductor integrated circuit apparatus having no dead space |
US5640338A (en) * | 1995-12-07 | 1997-06-17 | Hyundai Electronics Industries Co. Ltd. | Semiconductor memory device |
US5748549A (en) * | 1996-05-27 | 1998-05-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2216715B1 (de) * | 1973-01-31 | 1976-06-11 | Ibm France | |
JPS573289A (en) * | 1980-06-04 | 1982-01-08 | Hitachi Ltd | Semiconductor storing circuit device |
JPS5841597B2 (ja) * | 1980-12-24 | 1983-09-13 | 富士通株式会社 | 半導体メモリディスチャ−ジ回路 |
JPS5880189A (ja) * | 1981-11-05 | 1983-05-14 | Fujitsu Ltd | 半導体記憶装置 |
JPS59161061A (ja) * | 1983-02-10 | 1984-09-11 | Fujitsu Ltd | 半導体記憶装置 |
JPS6024058A (ja) * | 1983-07-20 | 1985-02-06 | Nec Corp | 半導体集積回路装置 |
-
1985
- 1985-11-14 KR KR1019850008526A patent/KR900006221B1/ko not_active IP Right Cessation
- 1985-11-14 US US06/798,186 patent/US4695978A/en not_active Expired - Lifetime
- 1985-11-15 DE DE8585402209T patent/DE3583115D1/de not_active Expired - Fee Related
- 1985-11-15 JP JP60254995A patent/JPS61267994A/ja active Pending
- 1985-11-15 EP EP85402209A patent/EP0182712B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR900006221B1 (ko) | 1990-08-25 |
EP0182712B1 (de) | 1991-06-05 |
US4695978A (en) | 1987-09-22 |
JPS61267994A (ja) | 1986-11-27 |
EP0182712A3 (en) | 1989-08-16 |
KR860004408A (ko) | 1986-06-20 |
EP0182712A2 (de) | 1986-05-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3576433D1 (de) | Halbleiterspeichervorrichtung. | |
DE3584189D1 (de) | Halbleiterspeichergeraet. | |
DE3581773D1 (de) | Halbleiterspeichervorrichtung. | |
DE3684509D1 (de) | Halbleiterspeichergeraet. | |
DE3681082D1 (de) | Halbleiterspeichervorrichtung. | |
DE3685361D1 (de) | Halbleiterspeichervorrichtung. | |
DE3584702D1 (de) | Halbleiterlaservorrichtung. | |
DE3177183D1 (de) | Halbleiterspeichergeraet. | |
DE3580953D1 (de) | Entladungsvorrichtung. | |
DE3584330D1 (de) | Halbleiterlaservorrichtung. | |
DE3484514D1 (de) | Halbleiterspeichergeraet. | |
DE3686994D1 (de) | Halbleiterspeicher. | |
DE3587748D1 (de) | Halbleiterlaseranordnung. | |
DE3484232D1 (de) | Halbleiterspeichervorrichtung. | |
DE3584799D1 (de) | Halbleitervorrichtung. | |
DE3687322D1 (de) | Halbleiterspeicheranordnung. | |
DE3770953D1 (de) | Halbleiterspeichervorrichtungen. | |
DE3585733D1 (de) | Halbleiterspeichereinrichtung mit lese-aenderung-schreib-konfiguration. | |
DE3575498D1 (de) | Halbleiter-fotodetektorvorrichtung. | |
DE3767579D1 (de) | Nichtfluechtige halbleiter-speichereinrichtung. | |
DE3581370D1 (de) | Halbleitervorrichtung. | |
DE3587052D1 (de) | Halbleiterspeichergeraet. | |
DE68920946D1 (de) | Halbleiter-Speichereinrichtung. | |
DE3675445D1 (de) | Halbleiterspeicheranordnung. | |
DE3680562D1 (de) | Halbleiterspeicheranordnung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |