DE3484232D1 - Halbleiterspeichervorrichtung. - Google Patents

Halbleiterspeichervorrichtung.

Info

Publication number
DE3484232D1
DE3484232D1 DE8484402560T DE3484232T DE3484232D1 DE 3484232 D1 DE3484232 D1 DE 3484232D1 DE 8484402560 T DE8484402560 T DE 8484402560T DE 3484232 T DE3484232 T DE 3484232T DE 3484232 D1 DE3484232 D1 DE 3484232D1
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484402560T
Other languages
English (en)
Inventor
Yoshihiro Takemae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3484232D1 publication Critical patent/DE3484232D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE8484402560T 1983-12-13 1984-12-12 Halbleiterspeichervorrichtung. Expired - Lifetime DE3484232D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58233554A JPS60126861A (ja) 1983-12-13 1983-12-13 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3484232D1 true DE3484232D1 (de) 1991-04-11

Family

ID=16956879

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484402560T Expired - Lifetime DE3484232D1 (de) 1983-12-13 1984-12-12 Halbleiterspeichervorrichtung.

Country Status (5)

Country Link
US (1) US4646118A (de)
EP (1) EP0145606B1 (de)
JP (1) JPS60126861A (de)
KR (1) KR910002030B1 (de)
DE (1) DE3484232D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161441A (ja) * 1984-09-03 1986-03-29 Toshiba Corp 半導体装置の製造方法
US4791463A (en) * 1984-10-31 1988-12-13 Texas Instruments Incorporated Structure for contacting devices in three dimensional circuitry
JPH0650765B2 (ja) * 1985-08-28 1994-06-29 日本電気株式会社 半導体装置の製造方法
JPS61280651A (ja) * 1985-05-24 1986-12-11 Fujitsu Ltd 半導体記憶装置
JPS6239053A (ja) * 1985-08-14 1987-02-20 Nec Corp 半導体メモリセル及びその製造方法
US4679300A (en) * 1985-10-07 1987-07-14 Thomson Components-Mostek Corp. Method of making a trench capacitor and dram memory cell
JPH0691211B2 (ja) * 1986-03-07 1994-11-14 キヤノン株式会社 半導体記憶素子の製造方法
US5342792A (en) * 1986-03-07 1994-08-30 Canon Kabushiki Kaisha Method of manufacturing semiconductor memory element
KR900003262B1 (ko) * 1987-04-30 1990-05-12 삼성전자 주식회사 반도체 장치의 제조방법
JPH01143254A (ja) * 1987-11-28 1989-06-05 Mitsubishi Electric Corp 半導体記憶装置
US4896293A (en) * 1988-06-09 1990-01-23 Texas Instruments Incorporated Dynamic ram cell with isolated trench capacitors
US5208597A (en) * 1988-10-13 1993-05-04 Crystal Semiconductor Compensated capacitors for switched capacitor input of an analog-to-digital converter
US4918454A (en) * 1988-10-13 1990-04-17 Crystal Semiconductor Corporation Compensated capacitors for switched capacitor input of an analog-to-digital converter
US5057887A (en) * 1989-05-14 1991-10-15 Texas Instruments Incorporated High density dynamic ram cell
JPH0770618B2 (ja) * 1989-05-22 1995-07-31 三菱電機株式会社 半導体記憶装置およびその製造方法
JP2551203B2 (ja) * 1990-06-05 1996-11-06 三菱電機株式会社 半導体装置
KR970001894B1 (en) * 1991-09-13 1997-02-18 Nippon Electric Kk Semiconductor memory device
US5589847A (en) * 1991-09-23 1996-12-31 Xerox Corporation Switched capacitor analog circuits using polysilicon thin film technology
KR0157912B1 (ko) * 1995-11-28 1998-12-15 문정환 반도체 장치의 축전기 전극구조 및 제조 방법
US5614431A (en) * 1995-12-20 1997-03-25 International Business Machines Corporation Method of making buried strap trench cell yielding an extended transistor
US5793075A (en) * 1996-07-30 1998-08-11 International Business Machines Corporation Deep trench cell capacitor with inverting counter electrode
JP3749776B2 (ja) 1997-02-28 2006-03-01 株式会社東芝 半導体装置
US6222254B1 (en) * 1997-03-31 2001-04-24 Intel Corporation Thermal conducting trench in a semiconductor structure and method for forming the same
US7067406B2 (en) * 1997-03-31 2006-06-27 Intel Corporation Thermal conducting trench in a semiconductor structure and method for forming the same
US9431107B2 (en) 2012-12-14 2016-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices and methods of manufacture thereof
KR102279921B1 (ko) * 2014-02-12 2021-07-22 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2441385C3 (de) * 1974-08-29 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Vergrößern des Lesesignals bei einem Ein- Transistor-Speicherelement
JPS538581A (en) * 1976-07-12 1978-01-26 Nec Corp Semiconductor memory unit
JPS5394191A (en) * 1977-01-28 1978-08-17 Toshiba Corp Semiconductor device
US4163243A (en) * 1977-09-30 1979-07-31 Hewlett-Packard Company One-transistor memory cell with enhanced capacitance
JPS5524429A (en) * 1978-08-09 1980-02-21 Mitsubishi Electric Corp Punch-through type constant-voltage diode and its manufacturing method
JPS55146956A (en) * 1979-05-02 1980-11-15 Fujitsu Ltd Semiconductor element having function for avoiding generation of soft error due to alpha ray
JPS5632757A (en) * 1979-08-25 1981-04-02 Semiconductor Res Found Insulated gate type transistor and integrated circuit
JPS5643753A (en) * 1979-09-18 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory storage
US4466180A (en) * 1981-06-25 1984-08-21 Rockwell International Corporation Method of manufacturing punch through voltage regulator diodes utilizing shaping and selective doping
JPS583260A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 竪型埋め込みキヤパシタ
JPS582360A (ja) * 1981-06-30 1983-01-07 Toyota Central Res & Dev Lab Inc 耐糸状腐食性塗料組成物
US4507159A (en) * 1981-10-07 1985-03-26 Advanced Micro Devices, Inc. Method of manufacturing high capacity semiconductor capacitance devices
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ

Also Published As

Publication number Publication date
KR910002030B1 (en) 1991-03-30
JPH0562468B2 (de) 1993-09-08
EP0145606B1 (de) 1991-03-06
JPS60126861A (ja) 1985-07-06
EP0145606A2 (de) 1985-06-19
EP0145606A3 (en) 1986-01-29
KR850004875A (ko) 1985-07-27
US4646118A (en) 1987-02-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition