DE3767579D1 - Nichtfluechtige halbleiter-speichereinrichtung. - Google Patents
Nichtfluechtige halbleiter-speichereinrichtung.Info
- Publication number
- DE3767579D1 DE3767579D1 DE8787301563T DE3767579T DE3767579D1 DE 3767579 D1 DE3767579 D1 DE 3767579D1 DE 8787301563 T DE8787301563 T DE 8787301563T DE 3767579 T DE3767579 T DE 3767579T DE 3767579 D1 DE3767579 D1 DE 3767579D1
- Authority
- DE
- Germany
- Prior art keywords
- storage device
- semiconductor storage
- volatile semiconductor
- volatile
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61042383A JPS62217493A (ja) | 1986-02-27 | 1986-02-27 | 半導体不揮発性記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3767579D1 true DE3767579D1 (de) | 1991-02-28 |
Family
ID=12634540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787301563T Expired - Fee Related DE3767579D1 (de) | 1986-02-27 | 1987-02-24 | Nichtfluechtige halbleiter-speichereinrichtung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4799194A (de) |
EP (1) | EP0250060B1 (de) |
JP (1) | JPS62217493A (de) |
KR (1) | KR900008941B1 (de) |
DE (1) | DE3767579D1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4750155A (en) * | 1985-09-19 | 1988-06-07 | Xilinx, Incorporated | 5-Transistor memory cell which can be reliably read and written |
JPS6414798A (en) * | 1987-07-09 | 1989-01-18 | Fujitsu Ltd | Non-volatile memory device |
US4980859A (en) * | 1989-04-07 | 1990-12-25 | Xicor, Inc. | NOVRAM cell using two differential decouplable nonvolatile memory elements |
US5732015A (en) * | 1991-04-23 | 1998-03-24 | Waferscale Integration, Inc. | SRAM with a programmable reference voltage |
US5602776A (en) * | 1994-10-17 | 1997-02-11 | Simtek Corporation | Non-Volatile, static random access memory with current limiting |
US5998263A (en) * | 1996-05-16 | 1999-12-07 | Altera Corporation | High-density nonvolatile memory cell |
US5901079A (en) * | 1997-01-13 | 1999-05-04 | International Business Machines Corporation | Skewed memory cell apparatus and method |
US6424011B1 (en) | 1997-04-14 | 2002-07-23 | International Business Machines Corporation | Mixed memory integration with NVRAM, dram and sram cell structures on same substrate |
US5880991A (en) | 1997-04-14 | 1999-03-09 | International Business Machines Corporation | Structure for low cost mixed memory integration, new NVRAM structure, and process for forming the mixed memory and NVRAM structure |
US6075737A (en) | 1998-12-02 | 2000-06-13 | Micron Technology, Inc. | Row decoded biasing of sense amplifier for improved one's margin |
US6452856B1 (en) * | 1999-02-26 | 2002-09-17 | Micron Technology, Inc. | DRAM technology compatible processor/memory chips |
US6259126B1 (en) | 1999-11-23 | 2001-07-10 | International Business Machines Corporation | Low cost mixed memory integration with FERAM |
US6240009B1 (en) * | 2000-02-02 | 2001-05-29 | Hewlett-Packard Company | Asymmetric ram cell |
US6556487B1 (en) * | 2000-09-20 | 2003-04-29 | Cypress Semiconductor Corp. | Non-volatile static memory cell |
US6532169B1 (en) * | 2001-06-26 | 2003-03-11 | Cypress Semiconductor Corp. | SONOS latch and application |
US8072834B2 (en) * | 2005-08-25 | 2011-12-06 | Cypress Semiconductor Corporation | Line driver circuit and method with standby mode of operation |
GB2437989B (en) * | 2006-05-09 | 2009-09-09 | Micron Technology Inc | Method, apparatus, and system for providing initial state random access memory |
US20080151654A1 (en) | 2006-12-22 | 2008-06-26 | Allan James D | Method and apparatus to implement a reset function in a non-volatile static random access memory |
US7881118B2 (en) * | 2007-05-25 | 2011-02-01 | Cypress Semiconductor Corporation | Sense transistor protection for memory programming |
US8059458B2 (en) * | 2007-12-31 | 2011-11-15 | Cypress Semiconductor Corporation | 3T high density nvDRAM cell |
US8064255B2 (en) * | 2007-12-31 | 2011-11-22 | Cypress Semiconductor Corporation | Architecture of a nvDRAM array and its sense regime |
US8036032B2 (en) | 2007-12-31 | 2011-10-11 | Cypress Semiconductor Corporation | 5T high density NVDRAM cell |
US9779814B2 (en) * | 2011-08-09 | 2017-10-03 | Flashsilicon Incorporation | Non-volatile static random access memory devices and methods of operations |
FR3007186B1 (fr) * | 2013-06-12 | 2016-09-09 | Stmicroelectronics Rousset | Dispositif de memoire compact associant un plan memoire du type sram et un plan memoire du type non volatil, et procedes de fonctionnement |
FR3018944A1 (fr) | 2014-03-21 | 2015-09-25 | St Microelectronics Rousset | Dispositif de memoire associant un plan memoire du type sram et un plan-memoire du type non volatil, durci contre des basculements accidentels |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3949383A (en) * | 1974-12-23 | 1976-04-06 | Ibm Corporation | D. C. Stable semiconductor memory cell |
JPS5953637B2 (ja) * | 1978-09-20 | 1984-12-26 | 株式会社東芝 | 記憶回路 |
US4274012A (en) * | 1979-01-24 | 1981-06-16 | Xicor, Inc. | Substrate coupled floating gate memory cell |
JPS5856198B2 (ja) * | 1980-09-25 | 1983-12-13 | 株式会社東芝 | 半導体記憶装置 |
US4400799A (en) * | 1981-09-08 | 1983-08-23 | Intel Corporation | Non-volatile memory cell |
US4434478A (en) * | 1981-11-27 | 1984-02-28 | International Business Machines Corporation | Programming floating gate devices |
US4420821A (en) * | 1982-02-19 | 1983-12-13 | International Business Machines Corporation | Static RAM with non-volatile back-up storage and method of operation thereof |
US4510584A (en) * | 1982-12-29 | 1985-04-09 | Mostek Corporation | MOS Random access memory cell with nonvolatile storage |
FR2543726B1 (fr) * | 1983-03-31 | 1985-06-14 | Efcis | Cellule de memoire ram non volatile a transistors cmos a grille flottante commune |
US4630238A (en) * | 1983-10-14 | 1986-12-16 | Fujitsu Limited | Semiconductor memory device |
JPS6083374A (ja) * | 1983-10-14 | 1985-05-11 | Fujitsu Ltd | 半導体記憶装置 |
JPS60136995A (ja) * | 1983-12-26 | 1985-07-20 | Seiko Instr & Electronics Ltd | 不揮発性ram |
US4618943A (en) * | 1984-01-09 | 1986-10-21 | International Business Machines Corporation | Semiconductor static read/write memory having an additional read-only capability |
JPS61246995A (ja) * | 1985-04-24 | 1986-11-04 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
US4686652A (en) * | 1985-11-25 | 1987-08-11 | Rockwell International Corporation | Non-volatile RAM cell with single high voltage precharge |
US4706220A (en) * | 1986-02-14 | 1987-11-10 | Rockwell International Corporation | Non-volatile RAM cell with dual high voltage precharge |
US5839614A (en) * | 1991-12-06 | 1998-11-24 | Aptar Group, Inc. | Dispensing package |
WO2001016691A1 (en) * | 1999-08-30 | 2001-03-08 | Anoto Ab | Notepad |
GB0202233D0 (en) * | 2002-01-31 | 2002-03-20 | Smith & Nephew | Bioresorbable polymers |
US7364539B2 (en) * | 2003-10-21 | 2008-04-29 | General Electric Company | Telemetry sensing system for infant care apparatus |
-
1986
- 1986-02-27 JP JP61042383A patent/JPS62217493A/ja active Pending
-
1987
- 1987-02-20 US US07/016,729 patent/US4799194A/en not_active Expired - Fee Related
- 1987-02-21 KR KR8701464A patent/KR900008941B1/ko not_active IP Right Cessation
- 1987-02-24 DE DE8787301563T patent/DE3767579D1/de not_active Expired - Fee Related
- 1987-02-24 EP EP87301563A patent/EP0250060B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0250060B1 (de) | 1991-01-23 |
US4799194A (en) | 1989-01-17 |
EP0250060A1 (de) | 1987-12-23 |
JPS62217493A (ja) | 1987-09-24 |
KR900008941B1 (en) | 1990-12-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |