DE19620677B4 - Verfahren zur Bildung eines SOG-Films bei einem Halbleiterbauelement und Halbleiterbauelement mit einem SOG-Film - Google Patents
Verfahren zur Bildung eines SOG-Films bei einem Halbleiterbauelement und Halbleiterbauelement mit einem SOG-Film Download PDFInfo
- Publication number
- DE19620677B4 DE19620677B4 DE19620677A DE19620677A DE19620677B4 DE 19620677 B4 DE19620677 B4 DE 19620677B4 DE 19620677 A DE19620677 A DE 19620677A DE 19620677 A DE19620677 A DE 19620677A DE 19620677 B4 DE19620677 B4 DE 19620677B4
- Authority
- DE
- Germany
- Prior art keywords
- sog film
- semiconductor device
- sog
- plasma
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000011282 treatment Methods 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 239000011229 interlayer Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 4
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- -1 N + Chemical class 0.000 description 2
- 229910008284 Si—F Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950012711A KR0172539B1 (ko) | 1995-05-22 | 1995-05-22 | 반도체 소자의 에스.오.지막 형성방법 |
| KR95-12711 | 1995-05-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE19620677A1 DE19620677A1 (de) | 1996-11-28 |
| DE19620677B4 true DE19620677B4 (de) | 2007-06-14 |
Family
ID=19415020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19620677A Expired - Fee Related DE19620677B4 (de) | 1995-05-22 | 1996-05-22 | Verfahren zur Bildung eines SOG-Films bei einem Halbleiterbauelement und Halbleiterbauelement mit einem SOG-Film |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH08330301A (ja) |
| KR (1) | KR0172539B1 (ja) |
| CN (1) | CN1076869C (ja) |
| DE (1) | DE19620677B4 (ja) |
| GB (1) | GB2301224B (ja) |
| TW (1) | TW299467B (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970052338A (ko) * | 1995-12-23 | 1997-07-29 | 김주용 | 반도체 소자의 제조방법 |
| GB2322734A (en) * | 1997-02-27 | 1998-09-02 | Nec Corp | Semiconductor device and a method of manufacturing the same |
| KR100458081B1 (ko) * | 1997-06-26 | 2005-02-23 | 주식회사 하이닉스반도체 | 반도체장치의비아홀형성방법 |
| KR100459686B1 (ko) * | 1997-06-27 | 2005-01-17 | 삼성전자주식회사 | 반도체장치의콘택홀형성방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2823878B2 (ja) * | 1989-03-09 | 1998-11-11 | 触媒化成工業株式会社 | 半導体集積回路の製造方法 |
| US5270267A (en) * | 1989-05-31 | 1993-12-14 | Mitel Corporation | Curing and passivation of spin on glasses by a plasma process wherein an external polarization field is applied to the substrate |
| JPH04158519A (ja) * | 1990-10-22 | 1992-06-01 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP2913918B2 (ja) * | 1991-08-26 | 1999-06-28 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH0778816A (ja) * | 1993-06-30 | 1995-03-20 | Kawasaki Steel Corp | 半導体装置の製造方法 |
-
1995
- 1995-05-22 KR KR1019950012711A patent/KR0172539B1/ko not_active IP Right Cessation
-
1996
- 1996-05-04 TW TW085105671A patent/TW299467B/zh active
- 1996-05-15 GB GB9610103A patent/GB2301224B/en not_active Expired - Fee Related
- 1996-05-20 JP JP8124131A patent/JPH08330301A/ja active Pending
- 1996-05-22 CN CN96110029A patent/CN1076869C/zh not_active Expired - Fee Related
- 1996-05-22 DE DE19620677A patent/DE19620677B4/de not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| JP 04174520 A (Patent Abstracts of Japan) * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9610103D0 (en) | 1996-07-24 |
| CN1140898A (zh) | 1997-01-22 |
| GB2301224B (en) | 1999-07-14 |
| TW299467B (ja) | 1997-03-01 |
| KR960043018A (ko) | 1996-12-21 |
| JPH08330301A (ja) | 1996-12-13 |
| CN1076869C (zh) | 2001-12-26 |
| DE19620677A1 (de) | 1996-11-28 |
| GB2301224A (en) | 1996-11-27 |
| KR0172539B1 (ko) | 1999-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: HOEFER & PARTNER, 81543 MUENCHEN |
|
| 8339 | Ceased/non-payment of the annual fee |