CN1076869C - 形成半导体器件的旋涂玻璃膜的方法 - Google Patents

形成半导体器件的旋涂玻璃膜的方法 Download PDF

Info

Publication number: CN1076869C
Authority: CN; China
Prior art keywords: sog film; film; sog; semiconductor device; annealing
Prior art date: 1995-05-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CN96110029A

Other languages

English (en)

Chinese (zh)

Other versions

CN1140898A (zh

Inventor

辛东善

金民载

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

SK Hynix Inc

Original Assignee

Hyundai Electronics Industries Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-05-22

Filing date

1996-05-22

Publication date

2001-12-26

1996-05-22 Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd

1997-01-22 Publication of CN1140898A publication Critical patent/CN1140898A/zh

2001-12-26 Application granted granted Critical

2001-12-26 Publication of CN1076869C publication Critical patent/CN1076869C/zh

2016-05-22 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims abstract description 19
239000004065 semiconductor Substances 0.000 title claims description 10
238000000137 annealing Methods 0.000 claims description 9
239000011229 interlayer Substances 0.000 claims description 7
238000004528 spin coating Methods 0.000 claims description 6
239000000463 material Substances 0.000 claims description 5
239000011521 glass Substances 0.000 claims description 4
150000002500 ions Chemical class 0.000 abstract description 4
230000015572 biosynthetic process Effects 0.000 abstract 1
229910052751 metal Inorganic materials 0.000 description 8
239000002184 metal Substances 0.000 description 8
238000010521 absorption reaction Methods 0.000 description 4
239000007789 gas Substances 0.000 description 4
MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
230000000694 effects Effects 0.000 description 3
238000009832 plasma treatment Methods 0.000 description 3
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
229910008284 Si—F Inorganic materials 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
229910052731 fluorine Inorganic materials 0.000 description 2
239000011737 fluorine Substances 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
239000000758 substrate Substances 0.000 description 2
208000036829 Device dislocation Diseases 0.000 description 1
229910018557 Si O Inorganic materials 0.000 description 1
229910007991 Si-N Inorganic materials 0.000 description 1
229910008051 Si-OH Inorganic materials 0.000 description 1
229910006294 Si—N Inorganic materials 0.000 description 1
229910006358 Si—OH Inorganic materials 0.000 description 1
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
239000002253 acid Substances 0.000 description 1
239000004411 aluminium Substances 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
239000002800 charge carrier Substances 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
230000006378 damage Effects 0.000 description 1
238000011982 device technology Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
230000005611 electricity Effects 0.000 description 1
238000009413 insulation Methods 0.000 description 1
238000010849 ion bombardment Methods 0.000 description 1
238000001459 lithography Methods 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000009304 pastoral farming Methods 0.000 description 1
230000000717 retained effect Effects 0.000 description 1
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment

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Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Formation Of Insulating Films (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Drying Of Semiconductors (AREA)

CN96110029A 1995-05-22 1996-05-22 形成半导体器件的旋涂玻璃膜的方法 Expired - Fee Related CN1076869C (zh)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
KR1019950012711A KR0172539B1 (ko)	1995-05-22	1995-05-22	반도체 소자의 에스.오.지막 형성방법
KR12711/95		1995-05-22
KR12711/1995		1995-05-22

Publications (2)

Publication Number	Publication Date
CN1140898A CN1140898A (zh)	1997-01-22
CN1076869C true CN1076869C (zh)	2001-12-26

Family

ID=19415020

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN96110029A Expired - Fee Related CN1076869C (zh)	1995-05-22	1996-05-22	形成半导体器件的旋涂玻璃膜的方法

Country Status (6)

Country	Link
JP (1)	JPH08330301A (ja)
KR (1)	KR0172539B1 (ja)
CN (1)	CN1076869C (ja)
DE (1)	DE19620677B4 (ja)
GB (1)	GB2301224B (ja)
TW (1)	TW299467B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR970052338A (ko) *	1995-12-23	1997-07-29	김주용	반도체 소자의 제조방법
GB2322734A (en) *	1997-02-27	1998-09-02	Nec Corp	Semiconductor device and a method of manufacturing the same
KR100458081B1 (ko) *	1997-06-26	2005-02-23	주식회사 하이닉스반도체	반도체장치의비아홀형성방법
KR100459686B1 (ko) *	1997-06-27	2005-01-17	삼성전자주식회사	반도체장치의콘택홀형성방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH04158519A (ja) *	1990-10-22	1992-06-01	Seiko Epson Corp	半導体装置の製造方法
US5270267A (en) *	1989-05-31	1993-12-14	Mitel Corporation	Curing and passivation of spin on glasses by a plasma process wherein an external polarization field is applied to the substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2823878B2 (ja) *	1989-03-09	1998-11-11	触媒化成工業株式会社	半導体集積回路の製造方法
JP2913918B2 (ja) *	1991-08-26	1999-06-28	日本電気株式会社	半導体装置の製造方法
JPH0778816A (ja) *	1993-06-30	1995-03-20	Kawasaki Steel Corp	半導体装置の製造方法

1995
- 1995-05-22 KR KR1019950012711A patent/KR0172539B1/ko not_active IP Right Cessation
1996
- 1996-05-04 TW TW085105671A patent/TW299467B/zh active
- 1996-05-15 GB GB9610103A patent/GB2301224B/en not_active Expired - Fee Related
- 1996-05-20 JP JP8124131A patent/JPH08330301A/ja active Pending
- 1996-05-22 CN CN96110029A patent/CN1076869C/zh not_active Expired - Fee Related
- 1996-05-22 DE DE19620677A patent/DE19620677B4/de not_active Expired - Fee Related

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5270267A (en) *	1989-05-31	1993-12-14	Mitel Corporation	Curing and passivation of spin on glasses by a plasma process wherein an external polarization field is applied to the substrate
JPH04158519A (ja) *	1990-10-22	1992-06-01	Seiko Epson Corp	半導体装置の製造方法

Also Published As

Publication number	Publication date
GB9610103D0 (en)	1996-07-24
CN1140898A (zh)	1997-01-22
GB2301224B (en)	1999-07-14
TW299467B (ja)	1997-03-01
KR960043018A (ko)	1996-12-21
JPH08330301A (ja)	1996-12-13
DE19620677B4 (de)	2007-06-14
DE19620677A1 (de)	1996-11-28
GB2301224A (en)	1996-11-27
KR0172539B1 (ko)	1999-03-30

Legal Events

Date	Code	Title	Description
1997-01-01	C10	Entry into substantive examination
1997-01-01	SE01	Entry into force of request for substantive examination
1997-01-22	C06	Publication
1997-01-22	PB01	Publication
2001-12-26	C14	Grant of patent or utility model
2001-12-26	GR01	Patent grant
2011-07-27	C17	Cessation of patent right
2011-07-27	CF01	Termination of patent right due to non-payment of annual fee	Granted publication date: 20011226 Termination date: 20100522

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