KR0172539B1 - 반도체 소자의 에스.오.지막 형성방법 - Google Patents

반도체 소자의 에스.오.지막 형성방법 Download PDF

Info

Publication number: KR0172539B1
Authority: KR; South Korea
Prior art keywords: film; semiconductor device; sog; forming; formation method
Prior art date: 1995-05-22

Application number

KR1019950012711A

Other languages

English (en)

Korean (ko)

Other versions

KR960043018A (ko

Inventor

신동선

김민재

Original Assignee

김주용

현대전자산업주식회사

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-05-22

Filing date

1995-05-22

Publication date

1999-03-30

1995-05-22 Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용

1995-05-22 Priority to KR1019950012711A priority Critical patent/KR0172539B1/ko

1996-05-04 Priority to TW085105671A priority patent/TW299467B/zh

1996-05-15 Priority to GB9610103A priority patent/GB2301224B/en

1996-05-20 Priority to JP8124131A priority patent/JPH08330301A/ja

1996-05-22 Priority to DE19620677A priority patent/DE19620677B4/de

1996-05-22 Priority to CN96110029A priority patent/CN1076869C/zh

1996-12-21 Publication of KR960043018A publication Critical patent/KR960043018A/ko

1999-03-30 Application granted granted Critical

1999-03-30 Publication of KR0172539B1 publication Critical patent/KR0172539B1/ko

Links

238000000034 method Methods 0.000 title claims abstract description 26
239000004065 semiconductor Substances 0.000 title claims abstract description 17
150000002500 ions Chemical class 0.000 claims abstract description 12
230000015572 biosynthetic process Effects 0.000 claims abstract description 8
229910052751 metal Inorganic materials 0.000 claims description 12
239000002184 metal Substances 0.000 claims description 12
239000011229 interlayer Substances 0.000 claims description 8
238000010438 heat treatment Methods 0.000 claims description 6
238000000137 annealing Methods 0.000 abstract description 2
230000015556 catabolic process Effects 0.000 abstract 1
238000006731 degradation reaction Methods 0.000 abstract 1
230000008595 infiltration Effects 0.000 abstract 1
238000001764 infiltration Methods 0.000 abstract 1
239000010410 layer Substances 0.000 description 11
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
238000010521 absorption reaction Methods 0.000 description 6
229910008284 Si—F Inorganic materials 0.000 description 3
238000000151 deposition Methods 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
239000010703 silicon Substances 0.000 description 3
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
230000006866 deterioration Effects 0.000 description 2
230000000694 effects Effects 0.000 description 2
229910052731 fluorine Inorganic materials 0.000 description 2
239000011737 fluorine Substances 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
238000009832 plasma treatment Methods 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
239000000758 substrate Substances 0.000 description 2
229910018557 Si O Inorganic materials 0.000 description 1
229910007991 Si-N Inorganic materials 0.000 description 1
229910008051 Si-OH Inorganic materials 0.000 description 1
229910006294 Si—N Inorganic materials 0.000 description 1
229910006358 Si—OH Inorganic materials 0.000 description 1
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
230000009172 bursting Effects 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
239000004020 conductor Substances 0.000 description 1
238000005336 cracking Methods 0.000 description 1
230000000593 degrading effect Effects 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
230000035515 penetration Effects 0.000 description 1
LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
238000001179 sorption measurement Methods 0.000 description 1
238000004528 spin coating Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Formation Of Insulating Films (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Drying Of Semiconductors (AREA)

KR1019950012711A 1995-05-22 1995-05-22 반도체 소자의 에스.오.지막 형성방법 KR0172539B1 (ko)

Priority Applications (6)

Application Number	Priority Date	Filing Date	Title
KR1019950012711A KR0172539B1 (ko)	1995-05-22	1995-05-22	반도체 소자의 에스.오.지막 형성방법
TW085105671A TW299467B (ja)	1995-05-22	1996-05-04
GB9610103A GB2301224B (en)	1995-05-22	1996-05-15	Method of forming a sog film in a semiconductor device
JP8124131A JPH08330301A (ja)	1995-05-22	1996-05-20	半導体素子のｓｏｇ膜の形成方法
DE19620677A DE19620677B4 (de)	1995-05-22	1996-05-22	Verfahren zur Bildung eines SOG-Films bei einem Halbleiterbauelement und Halbleiterbauelement mit einem SOG-Film
CN96110029A CN1076869C (zh)	1995-05-22	1996-05-22	形成半导体器件的旋涂玻璃膜的方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019950012711A KR0172539B1 (ko)	1995-05-22	1995-05-22	반도체 소자의 에스.오.지막 형성방법

Publications (2)

Publication Number	Publication Date
KR960043018A KR960043018A (ko)	1996-12-21
KR0172539B1 true KR0172539B1 (ko)	1999-03-30

Family

ID=19415020

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019950012711A KR0172539B1 (ko)	1995-05-22	1995-05-22	반도체 소자의 에스.오.지막 형성방법

Country Status (6)

Country	Link
JP (1)	JPH08330301A (ja)
KR (1)	KR0172539B1 (ja)
CN (1)	CN1076869C (ja)
DE (1)	DE19620677B4 (ja)
GB (1)	GB2301224B (ja)
TW (1)	TW299467B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR970052338A (ko) *	1995-12-23	1997-07-29	김주용	반도체 소자의 제조방법
GB2322734A (en) *	1997-02-27	1998-09-02	Nec Corp	Semiconductor device and a method of manufacturing the same
KR100458081B1 (ko) *	1997-06-26	2005-02-23	주식회사 하이닉스반도체	반도체장치의비아홀형성방법
KR100459686B1 (ko) *	1997-06-27	2005-01-17	삼성전자주식회사	반도체장치의콘택홀형성방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2823878B2 (ja) *	1989-03-09	1998-11-11	触媒化成工業株式会社	半導体集積回路の製造方法
US5270267A (en) *	1989-05-31	1993-12-14	Mitel Corporation	Curing and passivation of spin on glasses by a plasma process wherein an external polarization field is applied to the substrate
JPH04158519A (ja) *	1990-10-22	1992-06-01	Seiko Epson Corp	半導体装置の製造方法
JP2913918B2 (ja) *	1991-08-26	1999-06-28	日本電気株式会社	半導体装置の製造方法
JPH0778816A (ja) *	1993-06-30	1995-03-20	Kawasaki Steel Corp	半導体装置の製造方法

1995
- 1995-05-22 KR KR1019950012711A patent/KR0172539B1/ko not_active IP Right Cessation
1996
- 1996-05-04 TW TW085105671A patent/TW299467B/zh active
- 1996-05-15 GB GB9610103A patent/GB2301224B/en not_active Expired - Fee Related
- 1996-05-20 JP JP8124131A patent/JPH08330301A/ja active Pending
- 1996-05-22 CN CN96110029A patent/CN1076869C/zh not_active Expired - Fee Related
- 1996-05-22 DE DE19620677A patent/DE19620677B4/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
GB9610103D0 (en)	1996-07-24
CN1140898A (zh)	1997-01-22
GB2301224B (en)	1999-07-14
TW299467B (ja)	1997-03-01
KR960043018A (ko)	1996-12-21
JPH08330301A (ja)	1996-12-13
DE19620677B4 (de)	2007-06-14
CN1076869C (zh)	2001-12-26
DE19620677A1 (de)	1996-11-28
GB2301224A (en)	1996-11-27

Legal Events

Date	Code	Title	Description
1995-05-22	A201	Request for examination
1998-04-28	E902	Notification of reason for refusal
1998-09-05	E701	Decision to grant or registration of patent right
1998-10-24	GRNT	Written decision to grant
2009-09-22	FPAY	Annual fee payment	Payment date: 20090922 Year of fee payment: 12
2010-10-25	LAPS	Lapse due to unpaid annual fee

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KR100266428B1 (ko)	2000-09-15	반도체장치 및 그의 제조방법
JP3250518B2 (ja)	2002-01-28	半導体装置及びその製造方法
US6432843B1 (en)	2002-08-13	Methods of manufacturing integrated circuit devices in which a spin on glass insulation layer is dissolved so as to recess the spin on glass insulation layer from the upper surface of a pattern
KR100195246B1 (ko)	1999-06-15	Sog를 이용한 반도체장치에서의 콘택홀 제조방법
KR970052338A (ko)	1997-07-29	반도체 소자의 제조방법
KR0172539B1 (ko)	1999-03-30	반도체 소자의 에스.오.지막 형성방법
KR100391992B1 (ko)	2003-07-22	저유전율 층간절연막을 가지는 반도체 장치 형성 방법
US6350673B1 (en)	2002-02-26	Method for decreasing CHC degradation
KR19990009557A (ko)	1999-02-05	배선 형성 방법
KR100626740B1 (ko)	2006-09-22	반도체 소자의 층간절연막 형성 방법
KR100476371B1 (ko)	2005-07-05	금속층간의평탄화절연막형성방법
KR100459686B1 (ko)	2005-01-17	반도체장치의콘택홀형성방법
KR19980030940A (ko)	1998-07-25	반도체소자의 금속층간절연막 형성방법
KR0138124B1 (ko)	1998-06-15	반도체 소자의 금속층간절연막 형성 방법
KR100199344B1 (ko)	1999-06-15	반도체 소자의 제조방법
KR100193888B1 (ko)	1999-06-15	반도체 소자의 층간 절연막 형성 방법
KR100277181B1 (ko)	2001-01-15	다층 금속 배선용 절연막을 구비한 반도체 장치의 제조 방법
KR0172529B1 (ko)	1999-03-30	반도체 소자의 에스.오.지막 형성방법
KR0121562B1 (ko)	1997-11-11	반도체 장치의 비아홀 형성방법
KR100297105B1 (ko)	2001-11-01	반도체 소자의 층간 절연막 형성 방법
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