TW299467B - - Google Patents

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Info

Publication number: TW299467B
Authority: TW; Taiwan
Prior art keywords: patent application; item; sog; film; plasma
Prior art date: 1995-05-22

Application number

TW085105671A

Other languages

English (en)

Chinese (zh)

Original Assignee

Hyundai Electronics Ind

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-05-22

Filing date

1996-05-04

Publication date

1997-03-01

1996-05-04 Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind

1997-03-01 Application granted granted Critical

1997-03-01 Publication of TW299467B publication Critical patent/TW299467B/zh

Links

238000000034 method Methods 0.000 claims description 15
150000002500 ions Chemical class 0.000 claims description 12
238000005496 tempering Methods 0.000 claims description 9
239000004065 semiconductor Substances 0.000 claims description 7
239000000463 material Substances 0.000 claims description 4
239000011229 interlayer Substances 0.000 claims description 3
239000011248 coating agent Substances 0.000 claims description 2
238000000576 coating method Methods 0.000 claims description 2
239000010410 layer Substances 0.000 claims description 2
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
239000010931 gold Substances 0.000 claims 1
229910052737 gold Inorganic materials 0.000 claims 1
229910052751 metal Inorganic materials 0.000 description 9
239000002184 metal Substances 0.000 description 9
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
239000012528 membrane Substances 0.000 description 4
MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
230000000694 effects Effects 0.000 description 3
239000007789 gas Substances 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
239000010703 silicon Substances 0.000 description 3
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
229910008284 Si—F Inorganic materials 0.000 description 2
238000010521 absorption reaction Methods 0.000 description 2
239000006117 anti-reflective coating Substances 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
238000005336 cracking Methods 0.000 description 2
229910052731 fluorine Inorganic materials 0.000 description 2
239000011737 fluorine Substances 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
238000009832 plasma treatment Methods 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
239000000758 substrate Substances 0.000 description 2
229910007991 Si-N Inorganic materials 0.000 description 1
229910008051 Si-OH Inorganic materials 0.000 description 1
229910006294 Si—N Inorganic materials 0.000 description 1
229910006358 Si—OH Inorganic materials 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
239000000969 carrier Substances 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
210000004709 eyebrow Anatomy 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
125000003010 ionic group Chemical group 0.000 description 1
238000001459 lithography Methods 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
238000003892 spreading Methods 0.000 description 1
239000010936 titanium Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Formation Of Insulating Films (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Drying Of Semiconductors (AREA)

TW085105671A 1995-05-22 1996-05-04 TW299467B (ja)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019950012711A KR0172539B1 (ko)	1995-05-22	1995-05-22	반도체 소자의 에스.오.지막 형성방법

Publications (1)

Publication Number	Publication Date
TW299467B true TW299467B (ja)	1997-03-01

Family

ID=19415020

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW085105671A TW299467B (ja)	1995-05-22	1996-05-04

Country Status (6)

Country	Link
JP (1)	JPH08330301A (ja)
KR (1)	KR0172539B1 (ja)
CN (1)	CN1076869C (ja)
DE (1)	DE19620677B4 (ja)
GB (1)	GB2301224B (ja)
TW (1)	TW299467B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR970052338A (ko) *	1995-12-23	1997-07-29	김주용	반도체 소자의 제조방법
GB2322734A (en) *	1997-02-27	1998-09-02	Nec Corp	Semiconductor device and a method of manufacturing the same
KR100458081B1 (ko) *	1997-06-26	2005-02-23	주식회사 하이닉스반도체	반도체장치의비아홀형성방법
KR100459686B1 (ko) *	1997-06-27	2005-01-17	삼성전자주식회사	반도체장치의콘택홀형성방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2823878B2 (ja) *	1989-03-09	1998-11-11	触媒化成工業株式会社	半導体集積回路の製造方法
US5270267A (en) *	1989-05-31	1993-12-14	Mitel Corporation	Curing and passivation of spin on glasses by a plasma process wherein an external polarization field is applied to the substrate
JPH04158519A (ja) *	1990-10-22	1992-06-01	Seiko Epson Corp	半導体装置の製造方法
JP2913918B2 (ja) *	1991-08-26	1999-06-28	日本電気株式会社	半導体装置の製造方法
JPH0778816A (ja) *	1993-06-30	1995-03-20	Kawasaki Steel Corp	半導体装置の製造方法

1995
- 1995-05-22 KR KR1019950012711A patent/KR0172539B1/ko not_active IP Right Cessation
1996
- 1996-05-04 TW TW085105671A patent/TW299467B/zh active
- 1996-05-15 GB GB9610103A patent/GB2301224B/en not_active Expired - Fee Related
- 1996-05-20 JP JP8124131A patent/JPH08330301A/ja active Pending
- 1996-05-22 CN CN96110029A patent/CN1076869C/zh not_active Expired - Fee Related
- 1996-05-22 DE DE19620677A patent/DE19620677B4/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
GB9610103D0 (en)	1996-07-24
CN1140898A (zh)	1997-01-22
GB2301224B (en)	1999-07-14
KR960043018A (ko)	1996-12-21
JPH08330301A (ja)	1996-12-13
DE19620677B4 (de)	2007-06-14
CN1076869C (zh)	2001-12-26
DE19620677A1 (de)	1996-11-28
GB2301224A (en)	1996-11-27
KR0172539B1 (ko)	1999-03-30

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