DE102006062963B3 - Ausrichtmarke für Lithografie mit polarisiertem Licht, zugehörige Verwendung und Verfahren zum Finden derselben - Google Patents

Ausrichtmarke für Lithografie mit polarisiertem Licht, zugehörige Verwendung und Verfahren zum Finden derselben Download PDF

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Publication number
DE102006062963B3
DE102006062963B3 DE102006062963.9A DE102006062963A DE102006062963B3 DE 102006062963 B3 DE102006062963 B3 DE 102006062963B3 DE 102006062963 A DE102006062963 A DE 102006062963A DE 102006062963 B3 DE102006062963 B3 DE 102006062963B3
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Prior art keywords
alignment
section
alignment mark
components
component
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DE102006062963.9A
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German (de)
English (en)
Inventor
Chandrasekhar Sarma
Alois Gutmann
Sajan Marokkey
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Infineon Technologies AG
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Infineon Technologies AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE102006062963.9A 2005-09-07 2006-08-29 Ausrichtmarke für Lithografie mit polarisiertem Licht, zugehörige Verwendung und Verfahren zum Finden derselben Active DE102006062963B3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/221,202 US7687925B2 (en) 2005-09-07 2005-09-07 Alignment marks for polarized light lithography and method for use thereof
US11/221,202 2005-09-07

Publications (1)

Publication Number Publication Date
DE102006062963B3 true DE102006062963B3 (de) 2017-11-16

Family

ID=37763305

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102006062963.9A Active DE102006062963B3 (de) 2005-09-07 2006-08-29 Ausrichtmarke für Lithografie mit polarisiertem Licht, zugehörige Verwendung und Verfahren zum Finden derselben
DE102006040275A Active DE102006040275B4 (de) 2005-09-07 2006-08-29 Ausrichtmarken für Lithografie mit polarisiertem Licht und Verfahren zur Verwendung derselben

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE102006040275A Active DE102006040275B4 (de) 2005-09-07 2006-08-29 Ausrichtmarken für Lithografie mit polarisiertem Licht und Verfahren zur Verwendung derselben

Country Status (3)

Country Link
US (3) US7687925B2 (ja)
JP (1) JP4594280B2 (ja)
DE (2) DE102006062963B3 (ja)

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US7532305B2 (en) * 2006-03-28 2009-05-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using overlay measurement
US7898662B2 (en) * 2006-06-20 2011-03-01 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
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US20140240705A1 (en) * 2013-02-27 2014-08-28 Kabushiki Kaisha Toshiba Semiconductor device, reticle method for checking position misalignment and method for manufacturing position misalignment checking mark
JP6465540B2 (ja) * 2013-07-09 2019-02-06 キヤノン株式会社 形成方法及び製造方法
KR102119290B1 (ko) * 2014-02-12 2020-06-05 케이엘에이 코포레이션 부정확도를 감소시키고 콘트라스트를 유지하는 충전 요소를 갖는 계측 타겟
US20150276382A1 (en) * 2014-03-27 2015-10-01 United Microelectronics Corp. Measurement mark structure
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US9653404B1 (en) * 2016-08-23 2017-05-16 United Microelectronics Corp. Overlay target for optically measuring overlay alignment of layers formed on semiconductor wafer
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Also Published As

Publication number Publication date
JP2007073970A (ja) 2007-03-22
US20100128270A1 (en) 2010-05-27
US20070052113A1 (en) 2007-03-08
US8183129B2 (en) 2012-05-22
US20120208341A1 (en) 2012-08-16
US8377800B2 (en) 2013-02-19
US7687925B2 (en) 2010-03-30
DE102006040275A1 (de) 2007-03-15
JP4594280B2 (ja) 2010-12-08
DE102006040275B4 (de) 2013-03-07

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