CN1790692A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN1790692A CN1790692A CNA2005101186437A CN200510118643A CN1790692A CN 1790692 A CN1790692 A CN 1790692A CN A2005101186437 A CNA2005101186437 A CN A2005101186437A CN 200510118643 A CN200510118643 A CN 200510118643A CN 1790692 A CN1790692 A CN 1790692A
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Abstract
本发明的目的在于不改变传递模的电力用半导体装置的整体的大小就可使散热性提高。半导体装置备有:具有第1主面(16)与第2主面(18)的金属块(4);形成于上述第1主面(16)上的凹部(20、22、24);在上述凹部的内侧固定于上述金属块(4)上的半导体元件(6);与上述第1主面(16)接触并将上述第1主面(16)覆盖的第1绝缘层(38);与上述第2主面(18)接触并将上述第2主面(18)覆盖的第2绝缘层(38)。
Description
技术领域
本发明涉及半导体装置,特别地,可以作为传递模(transfermold)的电力用半导体装置而优选地利用的半导体装置及其制造方法。
背景技术
在现有的传递模的电力用半导体装置中,功率半导体元件通过焊料而连接固定于金属块的一个表面上,并且信号端子或者主电极端子使用金属细线而与该功率半导体元件电连接,这些功率半导体元件、主电极端子、信号端子与装载有这些部件的金属块表面一起以树脂来进行模塑。
也有在未装载功率半导体元件等的相反侧的金属块的表面(背面)上备有绝缘层的半导体装置。该绝缘层,备有与金属块表面接触的树脂层和配置于该树脂层上的金属层,并在与该金属层接触的状态下安装有散热器(散热片)。作为其它的电力用半导体装置,也有以不夹着绝缘层的方式而将散热器直接设置于金属块背面上的电力用半导体装置。根据这样构成的现有的电力用半导体装置,功率半导体元件产生的热,在金属块中扩散,并通过绝缘层或者从金属块直接,传递到散热器(散热片)而散热。
另外,从电力用半导体装置向散热器的热传递性能,与金属块和散热器的接触面积(对置面积)、金属块和散热器之间的温度差成比例。因而,为了提高散热性能,可以考虑使温度差较大的方法、以及使金属块与散热器较大从而增大两者的接触面积的方法。
不过,如果使外气温度(具体地,散热器的周边温度)为一定,则使温度差较大就会提高半导体元件的工作温度。这样做会产生可靠性降低这一问题。另一方面,增大接触面积就会使半导体装置变大,这与小型化的要求相悖。又,即使增大金属块,因为金属块内部的温度随着远离功率半导体元件而下降,所以散热效率也并不一定提高。
专利文献1、专利文献2、专利文献3以及专利文献4中所记载的半导体装置均是在半导体芯片的两面上设置散热部件从而从两面进行散热的半导体装置。
【专利文献1】特开2001-156225号公报
【专利文献2】特开2003-046036号公报
【专利文献3】特开2002-329804号公报
【专利文献4】特开平10-098140号公报
发明内容
本发明的目的在于,在半导体装置、例如传递模的电力用半导体装置中,不改变装置整体的大小就可使散热性提高。
本发明是为了达成上述目的而作出的。本发明的半导体装置的特征在于,备有:
具有第1主面与第2主面的金属块;
形成于上述第1主面上的凹部;
在上述凹部的内侧固定于上述金属块上的半导体元件;
与上述第1主面接触并覆盖上述第1主面的第1绝缘层;
与上述第2主面接触并覆盖上述第2主面的第2绝缘层。
通过利用本发明,在电力用半导体装置中,金属块的大小与半导体元件的发热量为已知的情况下,可以降低半导体元件的工作温度。又,相反地,如果将半导体元件的工作温度作成为固定的条件,则可以在半导体元件中流过更大的电流。进而,如果将电流与半导体元件的工作温度作成为固定的条件,则可以使装置整体小型化。
附图说明
图1是本发明的实施方式1的功率半导体装置的横剖视图[图1(A)],纵剖视图[图1(B)]以及俯视图[图1(C)]。横剖视图[图1(A)]是沿着俯视图[图1(C)]的虚线A-A的横剖视图。纵剖视图[图1(B)]是沿着俯视图[图1(C)]的虚线B-B的纵剖视图。在俯视图[图1(C)]中,为了明确地表示各部件的位置关系,除掉了一部分的部件。
图2是接合有散热片的实施方式1的功率半导体装置的横剖视图。
图3是本发明的实施方式1的功率半导体装置的变形例的俯视图。
图4是本发明的实施方式2的功率半导体装置的横剖视图[图4(A)],纵剖视图[图4(B)]以及俯视图[图4(C)]。横剖视图[图4(A)]是沿着俯视图[图4(C)]的虚线A-A的横剖视图。纵剖视图[图4(B)]是沿着俯视图[图4(C)]的虚线B-B的纵剖视图。在俯视图[图4(C)]中,为了明确地表示各部件的位置关系,除掉了一部分的部件。
图5是本发明的实施方式3的功率半导体装置的纵剖视图[图5(A)]以及俯视图[图5(B)]。纵剖视图[图5(A)]是沿着俯视图[图5(B)]的虚线A-A的纵剖视图。在俯视图[图5(B)]中,为了明确地表示各部件的位置关系,除掉了一部分的部件。
图6是本发明的实施方式4的功率半导体装置的在树脂密封前的状态下的横剖视图[图6(A)]以及在树脂密封后的状态下的横剖视图[图6(B)]。
图7是本发明的实施方式5的功率半导体装置的横剖视图[图7(A)],纵剖视图[图7(B)]以及俯视图[图7(C)]。横剖视图[图7(A)]是沿着俯视图[图7(C)]的虚线A-A的横剖视图。纵剖视图[图7(B)]是沿着俯视图[图7(C)]的虚线B-B的纵剖视图。在俯视图[图7(C)]中,为了明确地表示各部件的位置关系,除掉了一部分的部件。
图8接合有散热片的实施方式5的功率半导体装置的横剖视图。
图9是本发明的实施方式5的功率半导体装置的变形例的俯视图。
图10是本发明的实施方式6的功率半导体装置的俯视图[图10(A)]、以及纵剖视图[图10(B)]。在俯视图[图10(A)]中,为了明确地表示各部件的位置关系,除掉了一部分的部件。纵剖视图[图10(B)]是沿着俯视图[图10(A)]的虚线B-B的纵剖视图。
具体实施方式
以下,参照附图来说明本发明的优选实施方式。另外,在以下的说明中,适当使用了表示特定的方向的用语「上」、「下」、「左」、「右」以及包含有这些用语的其它用语(例如「上表面」、「下表面」、「右侧」、「左侧」),不过它们的使用是为了容易理解参照了附图的发明,本发明的技术范围并不因这些用语而被限定。因而,将以下说明的具体的发明实施方式上下翻转、或者在任意方向(例如,顺时针方向或者逆时针方向)上90°旋转的方式当然也包含于本发明的技术范围内。
【实施方式1】
图1表示本发明的实施方式1的电力用功率半导体装置的横剖面[图1(A)],纵剖面[图1(B)]以及将其一部分切除的俯视面[图1(C)],图示的功率半导体装置大致由金属块4、功率半导体元件6、第1主电极端子8、第2主电极端子10、信号端子12、以及模塑树脂(包覆部件)14构成。
金属块4是由铜或者铝等的导电性金属材料构成的四角形的板或者块,具有在图1(A)、1(B)中位于上方的第1主面16、与在该图中位于下方的第2主面18。以下,称第1主面为「金属块上表面」,第2主面为「金属块下表面」。
金属块上表面16具有槽19。如图1(C)所示那样,槽19在附图的上下方向将金属块上表面16的大致中央部分横截。又,如图1(A)、1(B)所示那样,槽19具有四角形的横截面。这样形成的槽19以与配置于该槽19中的多个部件相对应的方式具有多个收容部分。在实施方式中,这多个收容部分由用于将功率半导体元件6连接固定于金属块4上的第1凹部20、用于配置信号端子12的第2凹部22、与用于配置第1主电源端子8的第3凹部24构成,且在第1凹部20的两侧上配置第2凹部22与第3凹部24。如图1(C)最佳所示那样,在金属块上表面16上,以将出现于附图的右上的角部领域切除的方式形成有规定深度的第4凹部26,该第4凹部26作为第2主电极端子10的收容部分而利用。
另外,在本实施方式中,通过形成有一定深度的槽19,第1凹部20、第2凹部22以及第3凹部24的各自的底面就配置为相同的高度(参照图1(B)),不过这些凹部20、22、24的底面的高度即使不同亦可。又,如图1(C)所示那样,第2凹部22,比第1凹部20以及第3凹部24宽度要窄,不过各自的凹部的宽度以与配置于此处的部件的大小相对应的方式适当决定即可。第4凹部26的宽度以及深度也以与收容于此处的第2主电极端子10的大小相对应的方式适当决定即可。
相对于这样构成的金属块4,在第1凹部20的底面上,通过焊料28接合有设置于功率半导体元件6的背面上的电极用端子(未图示出)。取代焊料,利用导电性粘接材料亦可。另外,并不限定于本实施方式,即使在以下说明的其它实施方式的说明中,利用有焊料的部位也可以取代焊料而使用导电性粘接材料。
如图1(B)、1(C)所示那样,第1主电极端子8,以将一片金属板弯折的方式形成,具有一端侧的第1平坦部30与另一端侧的第2平坦部32,这两平坦部30、32以连接部(弯曲部)34来连接,且第1平坦部30与第2平坦部32作成为平行。这样构成的第1主电极端子8,在收容于第1凹部20与第3凹部24中并使第2平坦部32突出于外侧的状态下将第1平坦部30载置于半导体元件6上,并通过焊料28而与半导体元件6的主电极部(未图示出)接合。在该种状态下,如图1(A)所示那样,第1平坦部30的上表面,与金属块上表面1位于相同的高度,并以可以得到这样的高度关系(即,处于相同面上的关系)的方式决定槽19(第1凹部20的深度)。
信号端子12由细长的板状的导电性金属板材构成,并以在使一端侧位于第2凹部22上的状态下另一端端侧突出于外部的方式配置,配置于第2凹部22中的一端侧以由铝等构成的导电引线36而与功率半导体元件6的对应信号电极(未图示出)电连接。如图1(A)、1(B)所示那样,信号端子12,以在将树脂模塑于金属块4中之际埋入于该模塑树脂14中的方式保持。
第2主电极端子10由导电性金属的细长板构成,第2主电极端子10以一端部与其附近接合于第4凹部26中、另一端部突出于外部的方式配置。如图1(A)所示那样,第2主电极端子10的上表面位于比金属块上表面16低的位置,第4凹部26的深度比第2主电极端子的厚度大。因此,在将金属块4树脂模塑之际,该第2主电极端子上表面通过树脂而被覆盖。又,在第2主电极端子10的向第2主电极配置凹部26的底面上的接合中,除了焊料或者导电性粘接材料以外,也可以使用超声波接合的技术。
在金属块上表面16与金属块下表面18上配置有第1与第2绝缘层38。具体地,将金属块上表面16覆盖的第1绝缘层38,沿着金属块上表面16而在槽19(第1~第3凹部)上与第4凹部26上延伸,也将配置于金属块上的主电极端子部分以及信号端子部分覆盖,并从金属块上表面16的整个周缘突出规定长度。又,配置为与金属块上表面16相同高度的第1主电极端子8的上表面部分与绝缘层38接触。覆盖金属块下表面18的第2绝缘层38将金属块下表面18的整体覆盖,周缘部从金属块下表面18突出规定长度。
绝缘层38包含有电绝缘性的树脂层40与导电性的金属层42。构成树脂层40的材料可以使用环氧树脂。又,为了对树脂层40以及包含有它的绝缘层38赋予比模塑树脂14更高的热传导性,适当地混入有氧化铝、氮化铝、氮化硅或者氮化硼等的高热传导性的陶瓷粉末中的一种或者多种。构成金属层42的材料可以使用铜或者铝。具有这样构成的绝缘层38中,树脂层40配置于内侧(金属块侧),金属层42配置于外侧。
模塑树脂(molded resin)14由电绝缘性的树脂材料构成,在使上下的绝缘层38露出、使主电极端子8、10与信号端子12突出的状态下,成型于金属块4的周围。此时,突出于外部的主电极端子8、10与信号端子12通过上下的模具(未图示出)而保持。
相对于这样构成的功率半导体装置2,如图2所示那样,在上下的绝缘层38上设置有散热器(散热片)44。以此,由功率半导体元件6产生的热量,其一部分被金属块4吸收。被金属块4吸收的热,在金属块4中传递,通过下部绝缘层38从下部散热器44排放到大气中,并且通过上部绝缘层38从上部散热器44排放到大气中。又,由功率半导体元件6产生的热的残余部分从由功率半导体元件6支承的第1主电极端子8通过上部绝缘层38而从上部散热器44排放到大气中。此时,构成上下的绝缘层38的树脂层40具有较高的热传导性,所以与形成散热路径的其它部件(金属块4、主电极端子8、10以及金属层42)同样地良好地传递热,所以不会妨害由功率半导体元件6产生的热的流动。
因而,根据实施方式1的功率半导体装置2,因为由功率半导体元件6产生的热从上下的散热面高效地排放到大气中,所以结果是可以得到可靠性较高的功率半导体装置。又,可以在功率半导体元件6中流过较大的电流。进而,因为散热效率较高,所以金属块4的小型化,进而半导体装置的小型化成为可能。
另外,在上述功率半导体装置2中,第1主电极端子8与功率半导体元件6以焊料28来连接,不过以与引线36同样的引线来将两者电连接亦可。又,如图1所示的实施方式1的半导体装置2只具有一个半导体元件6,不过本发明也可以应用于备有多个半导体元件的半导体装置中。该情况下,多个半导体元件分别配置于形成在金属块上表面上的多个凹部中即可,分别配置于形成在金属块下表面上的多个凹部中亦可,分别配置于形成在金属块的上表面与下表面上的多个凹部中亦可。
进而,如图3所示那样,以一个树脂将多个金属块4a、4b模塑从而一体化,并且将从一个金属块4a引出的主电极端子8a与从另一个金属块4b引出的另一个主电极端子8b以配置于模塑树脂14内的接线端子46电连接亦可。
【实施方式2】
图4表示本发明的实施方式2的电力用功率半导体装置的横剖面[图4(A)]、纵剖面[图4(B)]以及将其一部分切除的俯视面[图4(C)],图示的功率半导体装置大致由金属块4、功率半导体元件6、第1主电极端子8、第2主电极端子10、信号端子12、以及模塑树脂(包覆部件)14构成。
实施方式2的功率半导体装置2是与实施方式1的功率半导体装置1大致相同的功率半导体装置。因而,对于相同的部位,使用相同的标记,省略其说明。
在通过图1来说明的实施方式1的半导体装置2的金属块4中,第2凹部22与第3凹部24配置于第1凹部20的两侧。在构成如图4所示的实施方式2的半导体装置2的金属块4中,第3凹部24以兼为第2凹部的方式形成,第2凹部并不单独地形成。进而,第3凹部24作成为比第1凹部20大的深度(参照图4(B))。
第1主电极端子8由第1平坦部30、第2平坦部32、以及连续部(弯曲部)34构成,如图4(C)所示那样,第1平坦部30与第2平坦部32作成为平行,连续部(弯曲部)34以与各自的平坦部正交的方式将2个平坦部连接。又,第1主电极端子8在第1平坦部30与连续部34的分界线、以及连续部34与第2平坦部32的分界线上弯折,第2平坦部32以比第1平坦部30低的方式作成。
在第3凹部24中,第1主电极端子8的第1平坦部30、信号端子12以及导电缆索36,如图4(B)所示那样,上下配置。第1主电极端子8与半导体元件6,与实施方式1同样地,通过焊料28来接合。第1主电极端子8的第2平坦部32,与实施方式1的半导体装置的情况位置相异,突出于外侧。第1主电极端子8的上表面部分,与实施方式1同样地,与绝缘层38接触。
信号端子12以在一端侧位于第3凹部24中的状态下另一端侧突出于外侧的方式配置,配置于第3凹部24中的一端侧以导电引线36来与功率半导体元件6的对应信号电极(未图示出)连接。
通过在第3凹部24中收容第1主电极端子8与信号端子12,就如图4(C)所示那样,可以将从金属块4的第1主面16除去了凹部(第1凹部20、第3凹部24)的面进一步扩大。因而,可以进一步提高来自于第1主面16侧的散热量。
在如图4所示的实施方式2的功率半导体装置2中,为了进行将信号端子12连接于功率半导体元件6上这一打线接合(wire bond)的配线作业,优选为可以在第1主电极端子8的第1平坦部30上开设有贯通孔。这样,就容易使用固定夹具或者打线接合工具。
【实施方式3】
图5表示本发明的实施方式3的电力用功率半导体装置的纵剖面[图5(A)]以及将其一部分切除的俯视面[图5(B)],图示的功率半导体装置大致由金属块4、功率半导体元件6、第1主电极端子8、第2主电极端子10、信号端子12、控制电路基板48、以及模塑树脂(包覆部件)14构成。
实施方式3的功率半导体装置2是与实施方式1的功率半导体装置大致相同的功率半导体装置。因而,对于相同的部位,使用相同的标记,省略其说明。
在如图5所示的功率半导体装置2中,与实施方式1的功率半导体装置同样地,在金属块4的单侧的主面上形成有槽19。在金属块4的第2凹部22的一部分上装载有控制电路基板48。
控制电路基板48的背面通过粘接材料(未图示出)而接合于金属块4的第2凹部22的底面上。控制电路基板48与半导体元件6的信号电极之间、以及信号端子12与控制电路基板48之间,以导电引线36来接线。用于接线的金属细线的材料并不限定于铝,其它的导电金属(例如,金)亦可。
通过装载有控制电路基板48,功率半导体装置2就具有控制功能,从而可以实现功率半导体装置2的高功能化。
【实施方式4】
图6表示本发明的实施方式4的电力用功率半导体装置的在树脂密封前的状态下的横剖面[图6(A)]以及在树脂密封后的状态下的横剖面[图6(B)],图示的功率半导体装置大致由金属块4、功率半导体元件6、第1主电极端子8、第2主电极端子10、信号端子12、以及模塑树脂(包覆部件)14构成。
实施方式4的功率半导体装置2是与实施方式1至实施方式3的功率半导体装置大致相同的功率半导体装置。因而,对于相同的部位,使用相同的标记,省略其说明。
如图6(A)所示那样,在实施方式4的半导体装置2中,第1主电极端子8,取代第1平坦部,而以将薄板(薄金属板)弯曲为2个卷状而形成的第1卷板部50构成。第1卷板部50的2个卷的一部分通过焊料28而向半导体元件6接合。该第1卷板部50以一个卷构成亦可。
在第1卷板部50接合于半导体元件6上的时刻,第1卷板部50的平坦的上表面部分以从金属块4的第1主面16稍微地(在图6(A)中,仅为“h”)伸出到上方的方式作成。之后,在通过模塑树脂14进行密封时,第1卷板部50通过绝缘层38被模具加压。这样,原本备有挠性的卷构造的卷板部适当挠曲,第1卷板部50的平坦的外面(上表面)部分以对绝缘层38施加压力的方式与其接触。这之后模塑树脂14固化,则第1卷板部50的平坦的部分保持为与第1主面16处于相同面的状态。因而,通过第1卷板部50的平坦的部分以压力接触于绝缘层38并保持该状态,就可以作成为使高散热特性更加稳定的半导体装置。
【实施方式5】
图7表示本发明的实施方式5的电力用功率半导体装置的横剖面[图7(A)]、纵剖面[图7(B)]以及将其一部分切除的俯视面[图7(C)],图示的功率半导体装置大致由金属块4、功率半导体元件6、第1主电极端子8、第2主电极端子10、信号端子12、以及模塑树脂(包覆部件)14构成。
实施方式5的功率半导体装置2是与实施方式1的功率半导体装置大致相同的功率半导体装置。因而,对于相同的部位,使用相同的标记,省略其说明。
在实施方式5的半导体装置2中,也与实施方式1同样地,形成有由第1凹部20、第2凹部22以及第3凹部24构成的槽19与第4凹部26,功率半导体元件6、信号端子12、第1主电极端子8、以及第2主电极端子10接合。在此,第1主电极端子8的第1平坦部30,与实施方式1同样地,与半导体元件6的主电极部(未图示出)接合,不过第1平坦部30的上表面位于比金属块4的第1主面16低的高度,并以可以得到这样关系的方式决定槽19(第1凹部20)的深度。在第1凹部20、第2凹部22以及第3凹部24内封入模塑树脂14,则第1主电极端子8的上表面就被模塑树脂14完全地覆盖。
在实施方式5的半导体装置2中,未备有如图1所示那样的绝缘层。因而,如图8所示那样,在安装散热器(散热片)44之际,在散热器44与功率半导体装置2之间,夹入有层状的绝缘材料52。以与金属块上表面16接触的方式配置的第1绝缘材料52从金属块上表面16的整个周缘突出规定的长度。以与金属块下表面18接触的方式配置的第2绝缘材料52,其周缘部从金属块下表面18突出规定的长度。构成绝缘材料52的材料可以是陶瓷,也可以是适当混入有高热传导性的陶瓷粉末的硅树脂。
实施方式5的功率半导体装置是与未备有绝缘层(参照图1)的规格的制品相对应的功率半导体装置。因而,如果以夹入有绝缘材料52的方式设置散热器(散热片)44,则实施方式5的功率半导体装置就同样地实现实施方式1的功率半导体装置所备有的效果。
散热器(散热片)44,如图8所示那样,相对于功率半导体装置2而上下地设定。以此,由功率半导体元件6产生的热,其一部分被金属块4吸收。被金属块4吸收的热,在金属块4中传递,通过下部绝缘材料52从下部散热器44排放到大气中,并且通过上部绝缘材料52从上部散热器44排放到大气中。此时,上下的绝缘材料52具有高热传导性,所以与构成散热路径的其它部件(金属块4、主电极端子8、10以及金属层42)同样地良好地传递热,所以不会妨害由功率半导体元件6产生的热的流动。
因而,根据实施方式5的功率半导体装置2,因为由功率半导体元件6产生的热可以从上下的散热面高效地排放到大气中,所以结果是可以得到可靠性较高的功率半导体装置。又,可以在功率半导体元件6中流过较大的电流。进而,因为散热效率较高,所以金属块4的小型化,进而半导体装置的小型化成为可能。
又,如图7所示的实施方式5的半导体装置2只具有一个半导体元件6,不过本发明也可以应用于备有多个半导体元件的半导体装置中。该情况下,多个半导体元件可以分别配置于形成在金属块上表面上的多个凹部中,分别配置于形成在金属块下表面上的多个凹部中亦可,分别配置于形成在金属块的上表面与下表面上的凹部中亦可。
进而,如图9所示那样,以一个树脂将多个金属块4a、4b模塑从而一体化,并且将从一个金属块4a引出的主电极端子10a与从另一个金属块4b引出的另一个主电极端子8b以配置于模塑树脂14内的接线端子46电连接亦可。
【实施方式6】
图10表示本发明的实施方式6的电力用功率半导体装置的将一部分切除的俯视面[图10(A)]以及纵剖面[图10(B)],图示的功率半导体装置大致由金属块4、功率半导体元件6、第1主电极端子8、第2主电极端子10、信号端子12、以及模塑树脂(包覆部件)14构成。
实施方式6的功率半导体装置2是与实施方式5的功率半导体装置大致相同的功率半导体装置。因而,对于相同的部位,使用相同的标记,省略其说明。
在通过图7说明的实施方式5的半导体装置2的金属块4中,第2凹部22与第3凹部24配置于第1凹部20的两侧。在如图10所示的实施方式6的半导体装置所包含的金属块4中,第3凹部24以兼为第2凹部的方式形成,第2凹部并不单独地形成。进而,第3凹部24作成为比第1凹部20大的深度(参照图10(B))。
第1主电极端子8由第1平坦部30、第2平坦部32、以及连续部(弯曲部)34构成,如图10(A)所示那样,第1平坦部30与第2平坦部32作成为平行,连续部(弯曲部)34以与各自的平坦部正交的方式将2个平坦部连接。又,第1主电极端子8在第1平坦部30与连续部34的分界线、以及连续部34与第2平坦部32的分界线上弯折,第2平坦部32以比第1平坦部30低的方式作成。
在第3凹部24中,第1主电极端子8的第1平坦部30、信号端子12以及导电引线36,如图10(B)所示那样,上下配置。第1主电极端子8与半导体元件6,与实施方式5同样地,通过焊料28来接合。第1主电极端子8的第2平坦部32,与实施方式5的半导体装置的情况位置相异,突出于外侧。
信号端子12以在一端侧位于第3凹部24中的状态下另一端侧突出于外侧的方式配置,配置于第3凹部24中的一端侧以导电引线36来与功率半导体元件6的对应信号电极(未图示出)连接。
通过在第3凹部24中将第1主电极端子8与信号端子12收容,就如图10(A)所示那样,可以将从金属块4的第1主面16除去了凹部(第1凹部20、第3凹部24)的面进一步扩大。因而,可以进一步提高来自于第1主面16侧的散热量。
在如图10所示的实施方式6的功率半导体装置中,为了进行将信号端子12连接于功率半导体元件6上这一打线接合的配线作业,优选为可以在第1主电极端子8的第1平坦部30上开设有贯通孔。这样,就容易使用固定夹具或者打线接合工具。
Claims (14)
1.一种半导体装置,其特征在于,备有:
具有第1主面与第2主面、且在该第1主面上形成有凹部的金属块;
配置于上述凹部内、且安装于上述第1主面上的半导体元件;
与上述半导体元件电连接的第1端子;
与上述金属块电连接的第2端子。
2.如权利要求1所述的半导体装置,其特征在于,备有:
抵接于上述第1主面上、且沿着上述第1主面在上述凹部上延伸的第1绝缘部件;
抵接于上述第2主面上的第2绝缘部件。
3.如权利要求2所述的半导体装置,其特征在于,还具有至少将上述凹部内填充并使上述第1绝缘部件与上述第2绝缘部件露出的、由绝缘性材料构成的填充部件。
4.如权利要求3所述的半导体装置,其特征在于,上述第1端子夹持于上述半导体元件与上述绝缘部件之间。
5.如权利要求4所述的半导体装置,其特征在于,上述第1端子,具有形成于上述半导体元件与上述绝缘部件之间并对该半导体元件施力的卷板部。
6.如权利要求1所述的半导体装置,其特征在于,上述凹部包含有以将上述第1主面横截的方式延伸的槽。
7.如权利要求1所述的半导体装置,其特征在于,还具有与上述半导体元件电连接的第3端子,
上述第3端子配置于上述第1端子与上述金属块之间。
8.如权利要求3所述的半导体装置,其特征在于,还具有固定于第1绝缘部件以及第2绝缘部件上的一对散热器。
9.如权利要求1所述的半导体装置,其特征在于,还具有至少将上述凹部内填充并使上述金属块的上述第1主面与上述第2主面露出的、由绝缘性材料构成的填充部件。
10.如权利要求9所述的半导体装置,其特征在于,上述填充部件,至少在上述凹部的上方覆盖上述第1端子。
11.如权利要求9所述的半导体装置,其特征在于,还具有经由一对绝缘膜而固定于上述第1主面以及上述第2主面上的一对散热器。
12.如权利要求1所述的半导体装置,其特征在于,在上述第2主面上还形成有凹部。
13.一种半导体装置的制造方法,其特征在于,具有以下步骤:
准备包含有第1主面以及第2主面的金属块的步骤;
在金属块的第1主面上形成凹部的步骤;
将半导体元件安装于上述凹部内的步骤;
将第1端子配置于上述凹部内,并使其与上述半导体元件电连接的步骤;
将第2端子配置于上述凹部内,并使其与上述金属块电连接的步骤;
形成抵接于上述第1主面上、并沿着上述第1主面在上述凹部上延伸的第1绝缘部件的步骤;
形成抵接于上述第2主面上的第2绝缘部件的步骤;
以使第1绝缘部件以及第2绝缘部件露出的方式将树脂封入于上述凹部内并使之固化的步骤。
14.一种半导体装置的制造方法,其特征在于,具有以下步骤:
准备包含有形成有凹部的第1主面与第2主面的金属块的步骤;
将半导体元件安装于上述凹部内的步骤;
将第1端子配置于上述凹部内,并使其与上述半导体元件电连接的步骤;
将第2端子配置于上述凹部内,并使其与上述金属块电连接的步骤;
以上述金属块的上述第1主面以及上述第2主面露出的方式将树脂封入于上述凹部内并使之固化的步骤。
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US20060091512A1 (en) | 2006-05-04 |
JP2006128555A (ja) | 2006-05-18 |
DE102005050330B4 (de) | 2015-03-12 |
US7642640B2 (en) | 2010-01-05 |
CN100594602C (zh) | 2010-03-17 |
JP4338620B2 (ja) | 2009-10-07 |
DE102005050330A1 (de) | 2006-06-08 |
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