CN1581482A - 电路模块 - Google Patents
电路模块 Download PDFInfo
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- CN1581482A CN1581482A CNA2004100549123A CN200410054912A CN1581482A CN 1581482 A CN1581482 A CN 1581482A CN A2004100549123 A CNA2004100549123 A CN A2004100549123A CN 200410054912 A CN200410054912 A CN 200410054912A CN 1581482 A CN1581482 A CN 1581482A
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Abstract
一种电路模块,其具有引线,并且内部具有微细的图案。本发明的电路模块(10A)具有:与外部进行电输入输出的端子的引线(11)、与引线(11)电连接的通过第一密封树脂(23)密封第一电路元件(22)的电路装置(20A)、在引线(11)上形成的岛形区(12)上安装的第二电路元件(16)、密封电路装置(20A)及第二电路元件(16)的第二密封树脂(15)。其中,电路装置(20A)具有间隔比引线(11)间间隔还狭窄的导电图案(21)。
Description
技术领域
本发明涉及一种电路模块,特别是具有作为外部端子的引线的电路模块。
背景技术
参照图9说明现有的电路装置100的结构。图9(A)是电路装置100的平面图,图9(B)是其剖面图(参照专利文献1)。
电路装置100的中央部上形成由导电材料构成的接合区102,接合区102的周围接近有多个引线101的一端。引线101的一端通过金属细线105与半导体元件104电连接,另一端从密封树脂103露出。密封树脂103具有密封半导体104、接合区102以及引线101并整体地支持的作用。
另外,半导体元件104是高功率时,为了使从半导体元件104发生的热高效地放到外部,也为了确保电流容量,引线101形成较粗。
一方面,一种称为SIP(System In Package)的薄型的封装件最近正在开发。在该SIP中,一般,以弹性片为基板,在其上安装元件,全体模制而成。并且,在该封装件背面上形成很多外部连接电极,并安装有焊球。
专利文献1特开平11-340257号公报
发明内容
但是,在引线框型的封装件中,存在无法一次安装LSI以及TR等的有源元件、片状电容等的无源元件的问题。这是因为在电连接各个元件时,在引线框是困难的。
一方面,SIP型的封装件中,可将LSI以及TR等的有源元件、片状电容等的无源元件安装一个封装件中。但因为是薄型小型,焊球小。因此存在这样的问题,若在印刷基板等上安装SIP,由于安装基板和封装件的热膨胀***数的不同,在焊球上发生裂化现象。并且,在车载等热发生的环境中,若采用作为高性能的半导体元件SIP,在放热和电连接上会出现问题。
另外,在如上述的电路装置100中,通过加工厚金属板,较粗地形成每个引线101。由此,形成具有0.5mm程度厚度的引线101时,引线101间的间隔也成为0.5mm以上。因此,使用引线101,存在不能在电路装置内部构成复杂电路的问题。
本发明是鉴于上述问题点而研发成的,其主要目的在于提供具有引线并且内部具有微细图案的电路模块。并且,本发明目的在于提供一种电路模块,其采用引线框,在吸收该安装基板的应力的同时又内置高性能***统。
本发明的电路模块特征在于具有:构成与外部进行电输入输出的端子的引线、与所述引线电连接的通过第一密封树脂密封第一电路元件的电路装置、安装在所述引线上形成的岛形区上的第二电路元件、密封所述电路装置及所述第二电路元件的第二密封树脂。所述电路装置,具有间隔比所述引线间间隔还狭窄的导电图案。
另外,本发明电路模块特征在于具有:构成与外部进行电输入输出的端子的引线、与所述引线电连接的安装有第一电路元件的安装基板、在由所述引线形成的岛形区上安装的第二电路元件、密封所述安装基板和所述第一电路元件及所述第二电路元件的密封树脂。所述安装基板,具有间隔比所述引线间间隔还狭窄的导电图案。
另外,本发明的电路模块特征在于具有:由第一密封树脂密封电路元件的电路装置、密封所述电路装置的第二密封树脂、与所述电路装置电连接并从所述第二密封树脂导至外部的引线。所述第二密封树脂的热膨胀***数比所述第一密封树脂热膨胀***数还大。
本发明的电路模块具有作为外部端子功能的引线和与该引线电连接的电路装置。具有所述电路装置的导电图案间的间隔比所述引线间的间隔狭窄。由此,本发明的电路模块,由于具有形成较粗的引线而具有大的电流容量和良好的放热性,并且,可通过所述导电图案构成微细的电路。
另外,本发明的电路模块,使密封整体的第二密封树脂的热膨胀***数大于构成内部的电路装置的第一密封树脂。从而,电路模块整体的热膨胀***数与安装模块的基板近似。由此,可减小热应力,可提高电路模块的连接可靠性。
附图说明
图1(A)是表示本发明的电路模块的平面图,图1(B)是剖面图、图1(C)是剖面图;
图2(A)~图2(D)是表示本发明的电路模块的剖面图;
图3(A)是表示本发明的电路模块的平面图,图3(B)是剖面图;
图4(A)~图4(D)是表示本发明的电路模块的剖面图;
图5是表示本发明的电路模块的剖面图;
图6是表示本发明的电路模块的平面图;
图7(A)是表示本发明的电路模块的平面图,图7(B)是剖面图;
图8(A)~图8(C)是表示本发明的电路模块的剖面图;
图9(A)是表示现有的电路装置的平面图,图9(B)是剖面图。
具体实施方式
参照图1说明本发明的电路模块10A的构成。图1(A)是电路模块10A的平面图,图1(B)是其剖面图。
由图可知,本发明的电路模块10A,将设置外部连接电极的SIP等的薄型电路装置安装于引线框并进行树脂密封。通过该结构,可一次安装很多元件,可作为采用引线的模块实现只在背面设置外部电极的电路装置。该电路模块10A即使安装在印刷基板、陶瓷基板、或者金属基板上(以下,称为安装基板),也可通过引线11减小热应力,提高散热性。
电路模块10A在引线11上安装有电路装置20A。并且,功率***的半导体元件(功率MOS、IGBT、功率IC)不同于电路装置20A,另外通过裸片安装在岛形区12上。
例如,考虑变换器的六个开关晶体管和驱动这些的驱动电路内设于电路模块10A的情况。这时,六个晶体管安装在岛形区12上。并且,由多个元件构成的复杂的驱动电路,作为电路装置20A被封装。通过该结构,作为电路装置20A可实现只在引线框中无法实现的复杂的高性能电路,必须散热的元件通过采用引线可散热。并且,即使在安装基板上安装电路模块10A,因为电路装置20A电连接在引线上,所以也不至导致连接不良等可靠性降低的问题。
具体地,有在背面形成连接部14的电路装置20A。而且,在相当于该电路装置20A背面的部分上设有多个引线11。并且,为必须散热的第二电路元件16而设有岛形区12。而且,在该岛形区12周围设有引线11。在此,岛形区12,和引线11成一体,也起到地线的作用。
引线11一端从第二密封树脂15导至外部,作为与外部进行电输入输出的端子发挥作用。引线11另一端附近与内设于电路模块的元件电连接。另外,引线11为使从内设于模块的元件发生的热充分放至外部,且还为确保大的电流容量,其剖面形成较大。例如,假设引线11的剖面为0.5mm×0.5mm,可以充分地确保电流容量和提高放热性能。另外,引线11通过加工厚金属板形成加工它的方法,可列举使用模具的冲压加工或者蚀刻加工。由此,很难使引线11间的间隔比其厚度非常小。实际上,引线11间的间隔形成为与该厚度相同程度(如:0.5mm以上)。引线11的材料可全面采用铜、铁、镍、铝或者它们的合金。在此,引线11虽然从模块的相对边导至外部,但也可在四个方向或在一个方向导出。
进而,引线11可以延伸到电路装置20A的下方。具体地,参照图1(A),引线11E一个端部在纸面上从第二密封树脂15的上方的侧边导至外部。并且,引线11E的另一个端部延伸到电路装置20A的下方,连接在与引线11E导出方向相反方向(纸面的下方)的、形成在电路装置20A的周边部的连接部14A上。
另外,参照图1(A),引线11F和引线11G从电路模块10A的相对的边导出,但两引线也可在电路装置20A的下方连结。这样,在电路装置20A的下方,通过延伸到引线11,可以提高引线11的配线设计的自由度。
连接部14,由焊剂等钎焊焊料构成,起到既有机械连接又有电连接电路装置20A和引线11的作用。而且,连接部14的材料可采用Ag糊、Cu糊等导电性糊。电路装置20A的引线11的安装,可以采用熔融形成于电路装置20A的背面的连接部14的反射流焊接工序进行。具体地,在连接部14接触地方的引线11的表面涂布助焊剂,将电路装置20A放置于希望的位置,通过进行反射流焊接,可以连接电路装置20A和引线11。
第二密封树脂15覆盖引线11、电路装置20A、第二电路元件16以及金属细线13。并且,从第二密封树脂15导出引线11,作为与外部的电输入输出的端子发挥作用。
电路装置20A内设于电路模块10A,通过焊剂等钎焊焊料构成的连接部14与引线11机械并且电连接。电路装置20A呈不要支承基板的形状,是薄型的封装件。在此,电路装置20A主要由以下部分构成:导电图案21、放置于导电图案21上的第一电路元件22、使导电图案21的背面露出而密封第一电路元件22的第一密封树脂23。在此,第一电路元件22采用作为LSI芯片的半导体元件,通过金属细线25,第一电路元件22和导电图案21电连接。由此,第一电路元件22与金属细线25、导电图案21以及通过连接部14与引线11电连接。
导电图案21,可采用与上述引线11使用的金属相同的材料。在此,导电图案21形成放置作为半导体元件第一电路元件22的小焊盘和焊金属细线25的焊盘。并且,用于将希望的电路构成于电路装置20A内部的配线部也可通过导电图案21形成。并且,与引线11的连接的连接部14形成于导电图案21的背面。在此,导电图案21间的间隔,例如是150μm左右,也可能形成其以下的微细图案。
电路装置20A的背面除形成连接部14的位置,由抗蚀剂26覆盖。由此,通过该抗蚀剂26可限制由焊剂等钎焊焊料构成的连接部14的平面的大小。进而,可通过该抗蚀剂26进行导电图案21的背面与引线11的电绝缘。
第二电路元件16安装在形成于引线11A的岛形区上。如上所述,因为引线11A形成较大,所以第二电路元件16采用功率***的半导体元件时侯,也有可能处理大电流,而且,可向外部放出第二电路元件16发生的热。并且,第二电路元件16也可采用半导体元件以外的元件,采用片状电阻、片状电容以外,也可全面地采用无源元件和有源元件。第二电路元件16,其背面安装在岛形区上,其表面形成的电极和另一个引线11通过金属细线13连接。
另外,在图1(A)中,岛形区12和引线11A连结,但也可以使岛形区12与引线11A分离。由此,可以使安装在岛形区12上的第二电路元件16的背面独立于引线11。
另外,第二电路元件16采用比内设于电路装置20A的第一电路元件22发热多的元件。例如,第二电路元件16采用功率***半导体元件,作为第一电路元件22也可采用控制该第二电路元件的LSI芯片。
本发明的要点在于将SIP型的封装件的背面具有外部连接电极的电路装置20A安装于引线框11上。由此,因为电路装置20A未直接安装在安装基板上,所以可防止由于安装基板的热膨胀引起的焊料裂纹等可靠性降低的现象。并且,作为功率***元件的第二电路元件16安装在与引线框11连接到岛形区12上,由第二密封树脂15密封。结果,从第二电路元件16发生的热可良好地散热。并且,可在电路装置20A中实现在引线框无法实现的复杂的导电图案。
并且,电路装置20A通过作为钎焊焊料的连接部14安装在引线11上时,该连接部14由第二密封树脂15包围。第二密封树脂15,例如为高温密封,向连接部14连续施加压缩力。由此,也具有防止连接部14裂化现象的效果。
并且,本发明的要点在于电路装置20A内部的导电图案1间的间隔比引线11间的间隔还要狭窄。具体地,引线11形成较粗,导电图案21形成较细。即,由于引线11形成较粗,可确保电流容量以及提高发热性。并且,由于导电图案21形成较细,可环绕形成用于构成复杂电路的图案和实现交叉配线。具体是导电图案21之间距离为150μm以下.并且,也可以将连接引线11之间的配线部内设于电路装置20A。例如,参照图1(A),可将电连接引线11B和引线11D的配线部形成于该图所示的虚线路径。
进而,参照图1(C),在此,于电路装置20A的内部以倒装片方式安装第一电路元件22。即,第一电路元件22通过补片电极25B,与导电图案21电连接。
参照图2,说明另一实施例的电路模块10A的结构。图2(A)~图2(D)是说明各实施例的电路模块10A的结构的剖面图。由于这些电路模块的基本结构与参照图1说明的相同,所以以下以其不同点为中心进行说明。
参照图2(A),在此,电路装置20B具有支撑基板28。具体地,在支撑基板28表面形成导电图案21,与导电图案21电连接的第一电路元件22由第一密封树脂23覆盖。并且,导电图案21延伸至支撑基板28的背面,通过连接部14与引线11电连接。支撑基板28可全面采用树脂制基板、陶瓷制基板等。
参照图2(B),在此,电路装置20C,具有由第一导电图案21A以及第二导电图案21B构成的多层配线结构。第一导电图案21A和第二导电图案21B通过绝缘层层积,在希望的位置贯通绝缘层连接。第一导电图案21A通过金属细线25与第一电路元件22连接,第二导电图案21B通过连接部14与引线11安装。特别是第一导电图案21A,导电图案21A间的间隔可达到50μm左右,可形成微细的图案。
参照图2(C),在此,第一电路元件22采用半导体元件22A和片元件22B。即,可将多个元件内设于电路装置20D中,作为内设的元件可全面采用有源元件和无源元件。作为有源元件可采用晶体管、二极管、IC芯片等。并且,无源元件可采用片状电阻、片状电容等。而且,也可把电路装置20D作为通过电连接的多个第一电路元件22构筑***统的SIP(System InPackage)。
并且,在电路模块10A内设多个元件时,将流通大电流的元件作为第二电路元件16安装在引线22A的岛形区12上,将其它元件作为第一电路元件22内设于电路装置20A中。
参照图2(D),在此的电路模块具有:成为与外部进行电输入输出的端子的引线11、与引线11电连接的安装第一电路元件22的安装基板27、在引线11A上形成的岛形区12上安装的第二电路元件16.另外,安装基板27和第一电路元件22及第二电路元件16由密封树脂密封。
然后,安装基板27具有间隔比引线11间间隔还狭窄的导电图案21。
如上所述,该图表示的电路模块的基本结构与图1相同,不同点在于作为第一电路元件22的半导体元件22A及片元件22B安装在安装基板27上。
即,在形成于安装基板27的表面的微细导电图案21上,安装作为第一电路元件22的半导体元件22A以及片元件22B。并且,贯通安装基板27、延伸至安装基板27背面的导电图案21通过连接部14与引线11电连接。由此,安装第一电路元件22的安装基板27相当于图1所示电路装置20A。作为安装基板27可全面采用树脂制基板、陶瓷制基板等。并且,在安装基板27内部也可形成多层配线结构。
参照图3说明另一实施例的电路模块10B的结构。图3(A)是电路模块10B的平面图,图3(B)是其剖面图。
参照图3(A)以及图3(B),电路装置20A,以露出导电图案21背面的面朝上的方式,内设于电路模块10B。并且,导电图案21的背面和引线11通过金属细线13电连接。并且,电路装置20A,通过粘接剂等安装在接合区29上。该接合区29的尺寸较之电路装置20A可大可小。
金属细线13的材料采用铝时,导电图案21的背面以及引线11的表面未形成镀膜,可直接进行引线结合。由此,可简化制造工序及结构。
并且,参照图3(A),通过金属细线13A,电路装置20A的导电图案21的背面和第二电路元件16电连接。通过本发明的结构可这样直接连接电路装置20A和第二电路元件16。
参照图4,说明另一实施例的电路模块10B的结构。图4(A)~图4(D)是说明各实施例的电路模块10B的结构的剖面图。这些电路模块的基本结构与参照图3说明的一样。
参照图4(A),在此,具有支撑基板28的电路装置20B内设于电路模块10B。并且,支撑基板28的背面(在此为上面)的导电图案21和引线11通过金属细线13电连接。
参照图4(B),在此,具有由第一导电图案21A以及第二导电图案21B构成的多层配线结构的电路装置20C,内设于模块10B中。在电路装置20C上面露出的第二导电图案21B和引线11通过金属细线13电连接。
参照图4(C),多个第一电路元件22内设于电路装置20D中,在此,内设有半导体元件22A及片元件22B。
参照图4(D),在此,在形成于安装基板27表面的导电图案21上,安装作为第一电路元件22的半导体元件22A以及片元件22B。并且,安装基板27的周边部的导电图案21和引线11通过金属细线13电连接。
参照图5剖面图,说明其它实施例的电路模块的结构。
该图所示的电路模块中,在安装基板27表面安装电路元件,安装基板27和引线11通过金属细线25连接。并且,安装基板27上安装的片元件22B也通过金属细线25连接。即,电连接只通过金属细线25进行。从而,因为形成排除钎焊焊料、导电性粘接剂的结构,所以提高了连接可靠性。
具体地,安装基板27的周边部,形成由导电图案21形成的焊盘21A。并且,通过金属细线25,电连接焊盘21A和引线11。在安装基板27表面,形成密封电路元件的第一密封树脂23。在此,第一密封树脂23,在除去形成焊盘21A的安装基板27的周边部形成。并且,安装基板27和引线11通过粘接剂34机械地安装。
一般地,片元件22B通过焊料连接,但在此,使用金属细线25连接。具体地,金属细线25连接在位于片元件22B两端的电极部上面。由此,片元件22B的电极部上面也可施加为进行引线结合的镀金工艺。并且,片元件22B通过绝缘性粘接剂等安装在安装基板27表面。
片元件22B,例如在片状电容时,其热膨胀***数为10×10-6/℃,与安装基板比较其值小。由此,使用焊料将片元件22B安装在安装基板27上时,存在焊料上发生裂化的问题。本实施例中,因为是省去焊料而构成的结构,所以提高了连接可靠性。
参照图6,说明具有电路装置20的导电图案21的具体配线结构的一实施例。在此,说明具有多层配线结构的电路装置20C的配线结构。
参照该图,用实线表示与金属细线25电连接的第一导电图案21,用虚线表示通过绝缘层层积于第一导电图案下方的第二导电图案21B。
第一导电图案21A在内设于电路装置20C的第一电路装置22周边部形成点焊盘部,通过金属细线25,电连接第一电路元件22。并且,第一导电图案21A间的间隔是50μm左右,可形成非常微细的图案。在此,第一导电图案21A在周边部形成点焊盘部延伸到多层连接部30。并且,多层连接部30贯通绝缘层,电连接第一导电图案21A和第二导电图案21B.
第二导电图案21B主要形成外部电极。即,如图1所示的连接结构的情况,第二导电图案21B成为由钎焊焊料形成的连接部14形成的位置。并且,如图3所示的连接结构的情况,第二导电图案21B成为点焊金属细线13的位置。并且,也可通过第二导电图案21B,形成用于连接引线11之间的配线部。并且,在电路装置20C内部,也可通过第二导电图案21B形成用于使配线交叉的配线部。
其次,参照图7,说明另一实施例的电路模块10C的形成。图7(A)是电路模块10C的平面图,图7(B)是其剖面图。
参照图7(A),在电路模块10C的相对边设有多个引线11。并且,电路装置20A以倒装的方式通过连接部14安装在引线11上。引线11A和引线11B,通过延伸到电路装置20A的下方的配线部11C连接。
参照图7(B),如上所述,配线部11C延伸到电路装置20A的下方。并且,在电路装置20A,导电图案21的背面从第一密封树脂23露出。但是,露出的导电图案21,除形成连接部14的位置,由抗蚀剂26覆盖。由此,通过抗蚀剂26,可防止电路装置的导电图案21和配线部11C的接触。
其次,参照图8说明另一实施例的电路模块。
参照图8(A),在电路模块10D中,内设第一电路元件22的电路装置20B由第二密封树脂15密封。并且,电连接在电路装置20B的引线11从第二密封树脂15导至外部。在外部露出的引线11安装在形成于基板31的表面的导电路32上,由此进行电路模块10D的安装。
在此,通过使密封电路模块10D的全体的第二密封树脂15的热膨胀***数,比构成电路装置20B的第一密封树脂23的大而提高连接可靠性。具体地,第一密封树脂23的热膨胀***数,考虑到与内设元件的热膨胀***数的匹配,向小调整其值。如,第一密封树脂23的热膨胀***数为9~15×10-6/℃。对此,基板31由玻璃环氧树脂构成时,其热膨胀***数是20×10-6/℃左右。因此,第一密封树脂23和基板31的热膨胀***数差异大。从而,若考虑直接将电路装置20B安装在安装基板21上的情况,温度变化时,两者间可能发生较大的拉应力和压应力。本实施例中,通过将第二密封树脂15的热膨胀***数调整到20~25×10-6/℃左右,使得电路模块10D全体的热膨胀***数近似于基板31。由此,可减小拉应力和压应力。从而,可提高引线11和基板31的连接部的连接可靠性。
第二密封树脂15的热膨胀***数的调整,可通过改变混入的填充物的填充量进行。例如,通过减少热膨胀***数小的SiO2等填充物的混入量,可增大第二密封树脂15的热膨胀***数。
而且,本实施例中,通过引线11吸收应力。具体地,引线11的一端,在电路模块10D内部与电路装置20B安装。并且,导至外部的引线11的另一端,通过焊料等的连接部33A,与形成于基板31表面的导电路32安装。并且,引线11的中间部上,施行弯曲加工而形成倾斜部。从而,即使电路模块10D和基板31的热膨胀***数不同,通过引线11的倾斜部的弯曲,吸收热应力。
参照图8(B),说明电路模块10E。在此,在安装基板27的表面上形成导电图案21,该导电图案21上安装有电路装置20D、20E。而且,安装基板27的周边部上配置的导电图案21上安装引线11。在此,通过对照基板31增加安装基板27的热膨胀***数,提高连接可靠性。具体地,将基板31的热膨胀***数调整至20~25×10-6/℃左右。并且,在内设多个电路装置20时,也可以通过增大密封全体的第二密封树脂15的热膨胀***数,进一步提高连接可靠性。
而且,在此,可将功率***的元件的第二电路元件16内设于树脂密封的电路装置20中。由此,可将内设的全部电路元件作为树脂密封的封装件品进行安装。从而,可简化安装的工序。另外,第二电路元件16可采用功率MOSFET、功率晶体管、IGBT等。另外,也可能以裸片的形式将第二电路元件16安装在接连引线11的岛形区上。例如,在图1(A)所示的状态,可安装第二电路元件16。
参照图8(C),说明电路模块10F。在此,安装基板27表面上安装多个电路装置20,全体通过第二密封树脂15密封。而且,形成于安装基板27背面的第二导电图案21B在外部露出。
在安装基板27表面上形成有第一导电图案21A,在背面形成有第二导电图案21B。第一导电图案21A和第二导电图案21B通过贯通安装基板27的通孔连接。形成在表面的第一导电图案21A上安装电路装置20。形成在背面的第二导电图案21B在外部露出作为外部端子发挥作用。
第二导电图案21B在外部露出形成外部电极。第二导电图案21B,例如以0.2mm左右的狭小间距,成矩阵状形成于安装基板27的背面。通过该结构,可形成多个(数百个左右)的外部端子。并且,第二导电图案21B通过连接部33B,安装在形成于安装基板2表面的导电路32上。
在电路模块10F中,通过引线11减小拉应力和压应力,可确保连接部33B的连接可靠性。具体地,与第二导电图案21B比较,引线11牢固地与基板31安装。从而,因为连接强度强的引线11位于周边部,可减小作用于第二导电图案21B的连接部33B的拉应力和压应力。并且,引线11,不一定作为输入输出端子发挥作用,也可使用虚设的引线11。
Claims (16)
1.一种电路模块,其特征在于,
具有:构成与外部进行电输入输出的端子的引线、与所述引线电连接的由第一密封树脂密封第一电路元件的电路装置、在所述引线上形成的岛形区上安装的第二电路元件、密封所述电路装置及所述第二电路元件的第二密封树脂,
所述电路装置,具有间隔比所述引线间间隔还狭窄的导电图案。
2.如权利要求1所述的电路模块,其特征在于,所述电路装置通过钎料焊料构成的连接部与所述引线电连接。
3.如权利要求1所述的电路模块,其特征在于,所述电路装置的电极露出面朝上放置,并通过金属细线与所述引线电连接。
4.如权利要求1所述的电路模块,其特征在于,所述引线延伸到所述电路装置的下方。
5.如权利要求1所述的电路模块,其特征在于,所述导电图案具有多层配线结构。
6.如权利要求1所述的电路模块,其特征在于,所述第二电路元件是比所述第一电路元件发热量大的半导体元件。
7.一种电路模块,其特征在于,
具有:构成与外部进行电输入输出的端子的引线、与所述引线电连接的安装第一电路元件的安装基板、在所述引线上形成的岛形区上安装的第二电路元件、密封所述安装基板和所述第一电路元件及所述第二电路元件的密封树脂,
所述安装基板,具有间隔比所述引线间间隔还狭窄的导电图案。
8.如权利要求7所述的电路模块,其特征在于,所述安装基板的导电图案通过钎料焊料构成的连接部与所述引线电连接。
9.如权利要求7所述的电路模块,其特征在于,所述安装基板的导电图案通过金属细线与所述引线电连接。
10.如权利要求7所述的电路模块,其特征在于,所述引线延伸到所述安装基板的下方。
11.如权利要求7所述的电路模块,其特征在于,所述安装基板形成多层。
12.如权利要求7所述的电路模块,其特征在于,所述第二电路元件是比所述第一电路元件发热量还大的半导体元件。
13.一种电路模块,其特征在于,具有:由第一密封树脂密封电路元件的电路装置、密封所述电路装置的第二密封树脂、与所述电路装置电连接并从所述第二密封树脂导至外部的引线,
所述第二密封树脂的热膨胀***数比所述第一密封树脂热膨胀***数还大。
14.如权利要求13所述的电路模块,其特征在于,所述引线的一端,在所述第二密封树脂内部与所述电路装置连接,
所述引线的另一端从所述第二树脂导至外部并安装在外部的基板上。
15.如权利要求13所述的电路模块,其特征在于,具有在表面形成导电图案的安装基板,
所述电路装置电连接在所述安装基板的所述导电图案上,
所述引线通过所述导电图案与所述电路装置连接。
16.如权利要求15所述的电路模块,其特征在于,在所述安装基板的表面以及背面形成第一导电图案以及第二导电图案,
所述第一导电图案电连接在上述电路装置,
所述第二导电图案从所述第二密封树脂露至外部。
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JP (1) | JP2005064479A (zh) |
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CN104392969A (zh) * | 2014-10-13 | 2015-03-04 | 华东光电集成器件研究所 | 一种多芯片集成电路抗冲击封装结构 |
CN106206468A (zh) * | 2015-05-29 | 2016-12-07 | 三星电机株式会社 | 封装基板 |
CN111599769A (zh) * | 2019-12-31 | 2020-08-28 | 矽磐微电子(重庆)有限公司 | 半导体模块封装方法及半导体模块 |
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TW503496B (en) | 2001-12-31 | 2002-09-21 | Megic Corp | Chip packaging structure and manufacturing process of the same |
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JP2005268404A (ja) * | 2004-03-17 | 2005-09-29 | Sanyo Electric Co Ltd | 回路モジュール |
JP2006080333A (ja) * | 2004-09-10 | 2006-03-23 | Toshiba Corp | 半導体装置 |
JP4545022B2 (ja) * | 2005-03-10 | 2010-09-15 | 三洋電機株式会社 | 回路装置およびその製造方法 |
JP4758678B2 (ja) * | 2005-05-17 | 2011-08-31 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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JP6790372B2 (ja) * | 2016-02-05 | 2020-11-25 | 富士電機株式会社 | 半導体装置 |
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- 2004-07-13 JP JP2004205793A patent/JP2005064479A/ja active Pending
- 2004-07-20 TW TW93121570A patent/TWI241698B/zh not_active IP Right Cessation
- 2004-07-21 CN CNB2004100549123A patent/CN100562999C/zh not_active Expired - Fee Related
- 2004-07-23 KR KR20040057437A patent/KR100606295B1/ko not_active IP Right Cessation
- 2004-07-28 US US10/900,524 patent/US20050116322A1/en not_active Abandoned
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101878524B (zh) * | 2007-11-30 | 2012-10-03 | 夏普株式会社 | 源极驱动器、源极驱动器的制造方法和液晶模块 |
CN104392969A (zh) * | 2014-10-13 | 2015-03-04 | 华东光电集成器件研究所 | 一种多芯片集成电路抗冲击封装结构 |
CN106206468A (zh) * | 2015-05-29 | 2016-12-07 | 三星电机株式会社 | 封装基板 |
CN111599769A (zh) * | 2019-12-31 | 2020-08-28 | 矽磐微电子(重庆)有限公司 | 半导体模块封装方法及半导体模块 |
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KR100606295B1 (ko) | 2006-08-01 |
TW200515563A (en) | 2005-05-01 |
TWI241698B (en) | 2005-10-11 |
CN100562999C (zh) | 2009-11-25 |
US20050116322A1 (en) | 2005-06-02 |
KR20050014676A (ko) | 2005-02-07 |
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