JP2006128555A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2006128555A JP2006128555A JP2004317929A JP2004317929A JP2006128555A JP 2006128555 A JP2006128555 A JP 2006128555A JP 2004317929 A JP2004317929 A JP 2004317929A JP 2004317929 A JP2004317929 A JP 2004317929A JP 2006128555 A JP2006128555 A JP 2006128555A
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- Prior art keywords
- semiconductor device
- main surface
- recess
- metal block
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 105
- 239000002184 metal Substances 0.000 claims abstract description 105
- 229920005989 resin Polymers 0.000 claims description 37
- 239000011347 resin Substances 0.000 claims description 37
- 238000004804 winding Methods 0.000 claims description 13
- 239000011810 insulating material Substances 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 4
- 229920001187 thermosetting polymer Polymers 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 description 11
- 230000017525 heat dissipation Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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Abstract
【解決手段】 半導体装置は、第1の主面16と第2の主面18を有する金属ブロック4と、上記第1の主面16に形成された凹部(20、22、24)と、上記凹部の内側で上記金属ブロック4に固定された半導体素子6と、上記第1の主面16に接して上記第1の主面16を覆う第1の絶縁層38と、上記第2の主面18に接して上記第2の主面18を覆う第2の絶縁層38を有する。
【選択図】図1
Description
第1の主面と第2の主面を有する金属ブロックと、
上記第1の主面に形成された凹部と、
上記凹部の内側で上記金属ブロックに固定された半導体素子と、
上記第1の主面に接して上記第1の主面を覆う第1の絶縁層と、
上記第2の主面に接して上記第1の主面を覆う第2の絶縁層を備えたことを特徴とする半導体装置である。
Claims (12)
- 第1の主面と第2の主面を有する金属ブロックと、
上記第1の主面に形成された凹部と、
上記凹部の内側で上記金属ブロックに固定された半導体素子と、
上記第1の主面に接して上記第1の主面を覆う第1の絶縁層と、
上記第2の主面に接して上記第2の主面を覆う第2の絶縁層を備えたことを特徴とする半導体装置。 - 上記第1の絶縁層は上記第1の主面に沿って上記凹部上に延在していることを特徴とする請求項1に記載の半導体装置。
- 上記半導体素子と電気的に接続された第1の端子を有し、上記第1の端子の一部が上記凹部の内側で上記半導体素子と上記絶縁層に挟まれて配置されていることを特徴とする請求項2に記載の半導体装置。
- 上記第1の絶縁層と第2の絶縁層を露出させた状態で上記金属ブロックの少なくとも一部を覆う電気的に絶縁性の被覆部材を備えたことを特徴とする請求項1〜3のいずれかに記載の半導体装置。
- 第1の端子は、少なくとも一方向に撓む第1の巻板部を有し、
上記第1の巻板部が絶縁層に押圧力をもって接するように第1の端子が配置されることを特徴とする請求項1〜4のうちのいずれか一つに記載の半導体装置。 - 第1の主面と第2の主面を有する金属ブロックと、
上記第1の主面に形成された凹部と、
上記凹部の内側で上記金属ブロックに固定された半導体素子を備えたことを特徴とする半導体装置。 - 上記半導体素子と電気的に接続された第1の端子を有し、上記第1の端子の一部が上記凹部の内側で上記半導体素子と上記第1の主面との間に配置されていることを特徴とする請求項6に記載の半導体装置。
- 上記半導体素子と電気的に接続された第2の端子を有し、上記第2の端子の一部が上記凹部の内側で上記金属ブロック底面と上記第1の端子との間に配置されていることを特徴とする請求項7に記載の半導体装置。
- 上記第1の主面と第2の主面を露出させた状態で上記金属ブロックの少なくとも一部を覆う電気的に絶縁性の被覆部材を備えたことを特徴とする請求項6〜8のいずれか一つに記載の半導体装置。
- 第1の絶縁層及び第2の絶縁層のそれぞれの露出する面を覆って、放熱器が接合していることを特徴とする請求項1〜5のうちのいずれか一つに記載の半導体装置。
- 第1の主面及び第2の主面のそれぞれを覆って、薄い絶縁材を挟んで放熱器が接合していることを特徴とする請求項6〜9のうちのいずれか一つに記載の半導体装置。
- 第1の主面及び第2の主面を備え、第1の主面又は第2の主面に凹部が形成された金属ブロックを準備する工程と、
表面と裏面に所定の端子を有する半導体素子の裏面の端子を凹部の底面に接続する工程と、
一端面を半導体素子の表面の端子に接続した主電極端子の他端面を、凹部の形成された第1の主面又は第2の主面に接して覆う絶縁層を介して押圧して凹部内に配設する工程と、
前記押圧状態において凹部内に熱硬化性樹脂を封入し硬化させる工程と、
前記絶縁層を介し、凹部の形成された第1の主面又は第2の主面に放熱器の接合面を圧接して放熱器を接合させる工程とからなる半導体装置の製造方法。
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US11/258,213 US7642640B2 (en) | 2004-11-01 | 2005-10-26 | Semiconductor device and manufacturing process thereof |
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Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8198709B2 (en) * | 2006-10-18 | 2012-06-12 | Vishay General Semiconductor Llc | Potted integrated circuit device with aluminum case |
US7800208B2 (en) * | 2007-10-26 | 2010-09-21 | Infineon Technologies Ag | Device with a plurality of semiconductor chips |
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TWI727861B (zh) * | 2020-07-23 | 2021-05-11 | 朋程科技股份有限公司 | 晶片封裝結構及其製造方法 |
US11404359B2 (en) * | 2020-10-19 | 2022-08-02 | Infineon Technologies Ag | Leadframe package with isolation layer |
JP2022179872A (ja) * | 2021-05-24 | 2022-12-06 | 富士電機株式会社 | 半導体装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1098140A (ja) * | 1996-09-24 | 1998-04-14 | Hitachi Ltd | マルチチップ型半導体装置 |
JPH11126858A (ja) * | 1997-10-23 | 1999-05-11 | Sanken Electric Co Ltd | 薄型半導体装置 |
JP2001156225A (ja) * | 1999-11-24 | 2001-06-08 | Denso Corp | 半導体装置 |
JP2001308237A (ja) * | 2000-04-19 | 2001-11-02 | Denso Corp | 両面冷却型半導体カ−ドモジュ−ル及びそれを用いた冷媒間接冷却型半導体装置 |
JP2002329804A (ja) * | 2001-04-27 | 2002-11-15 | Denso Corp | 半導体装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3364400A (en) * | 1964-10-22 | 1968-01-16 | Texas Instruments Inc | Microwave transistor package |
US3820153A (en) * | 1972-08-28 | 1974-06-25 | Zyrotron Ind Inc | Plurality of semiconductor elements mounted on common base |
US4012768A (en) * | 1975-02-03 | 1977-03-15 | Motorola, Inc. | Semiconductor package |
US4639760A (en) * | 1986-01-21 | 1987-01-27 | Motorola, Inc. | High power RF transistor assembly |
JP2725952B2 (ja) * | 1992-06-30 | 1998-03-11 | 三菱電機株式会社 | 半導体パワーモジュール |
US5315155A (en) * | 1992-07-13 | 1994-05-24 | Olin Corporation | Electronic package with stress relief channel |
DE4300516C2 (de) * | 1993-01-12 | 2001-05-17 | Ixys Semiconductor Gmbh | Leistungshalbleitermodul |
US5710695A (en) * | 1995-11-07 | 1998-01-20 | Vlsi Technology, Inc. | Leadframe ball grid array package |
JP2755252B2 (ja) * | 1996-05-30 | 1998-05-20 | 日本電気株式会社 | 半導体装置用パッケージ及び半導体装置 |
KR100420793B1 (ko) * | 1996-10-10 | 2004-05-31 | 삼성전자주식회사 | 파워마이크로웨이브하이브리드집적회로 |
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
US6693350B2 (en) | 1999-11-24 | 2004-02-17 | Denso Corporation | Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure |
JP4218193B2 (ja) * | 2000-08-24 | 2009-02-04 | 三菱電機株式会社 | パワーモジュール |
JP3923258B2 (ja) | 2001-01-17 | 2007-05-30 | 松下電器産業株式会社 | 電力制御系電子回路装置及びその製造方法 |
JP2003046036A (ja) | 2001-08-01 | 2003-02-14 | Denso Corp | 半導体装置 |
JP3740116B2 (ja) | 2002-11-11 | 2006-02-01 | 三菱電機株式会社 | モールド樹脂封止型パワー半導体装置及びその製造方法 |
US7149088B2 (en) * | 2004-06-18 | 2006-12-12 | International Rectifier Corporation | Half-bridge power module with insert molded heatsinks |
US7221042B2 (en) * | 2004-11-24 | 2007-05-22 | Agere Systems Inc | Leadframe designs for integrated circuit plastic packages |
DE102005016650B4 (de) * | 2005-04-12 | 2009-11-19 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit stumpf gelöteten Anschluss- und Verbindungselementen |
-
2004
- 2004-11-01 JP JP2004317929A patent/JP4338620B2/ja active Active
-
2005
- 2005-10-20 DE DE102005050330.6A patent/DE102005050330B4/de active Active
- 2005-10-26 US US11/258,213 patent/US7642640B2/en active Active
- 2005-11-01 CN CN200510118643A patent/CN100594602C/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1098140A (ja) * | 1996-09-24 | 1998-04-14 | Hitachi Ltd | マルチチップ型半導体装置 |
JPH11126858A (ja) * | 1997-10-23 | 1999-05-11 | Sanken Electric Co Ltd | 薄型半導体装置 |
JP2001156225A (ja) * | 1999-11-24 | 2001-06-08 | Denso Corp | 半導体装置 |
JP2001308237A (ja) * | 2000-04-19 | 2001-11-02 | Denso Corp | 両面冷却型半導体カ−ドモジュ−ル及びそれを用いた冷媒間接冷却型半導体装置 |
JP2002329804A (ja) * | 2001-04-27 | 2002-11-15 | Denso Corp | 半導体装置 |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008277654A (ja) * | 2007-05-02 | 2008-11-13 | Mitsubishi Materials Corp | ヒートシンク付パワーモジュール用基板及びパワーモジュール |
JP2010161131A (ja) * | 2009-01-07 | 2010-07-22 | Mitsubishi Electric Corp | パワーモジュール及びパワー半導体装置 |
JP2010161188A (ja) * | 2009-01-08 | 2010-07-22 | Mitsubishi Electric Corp | パワーモジュール及びパワー半導体装置 |
JP2011029589A (ja) * | 2009-06-30 | 2011-02-10 | Denso Corp | 半導体装置およびその製造方法 |
JP2012227532A (ja) * | 2009-06-30 | 2012-11-15 | Denso Corp | 半導体装置およびその製造方法 |
JP2011134949A (ja) * | 2009-12-25 | 2011-07-07 | Mitsubishi Electric Corp | 半導体装置 |
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JP2013073964A (ja) * | 2011-09-26 | 2013-04-22 | Hitachi Automotive Systems Ltd | パワーモジュール |
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WO2013099545A1 (ja) * | 2011-12-26 | 2013-07-04 | 三菱電機株式会社 | 電力用半導体装置及びその製造方法 |
JP5175989B1 (ja) * | 2012-03-09 | 2013-04-03 | 福島双羽電機株式会社 | 平板形状の半導体装置 |
JP2014007209A (ja) * | 2012-06-22 | 2014-01-16 | Hitachi Automotive Systems Ltd | 半導体装置及びその製造方法 |
JP2013093631A (ja) * | 2013-02-19 | 2013-05-16 | Mitsubishi Electric Corp | パワーモジュールの製造方法 |
JP2015145626A (ja) * | 2014-01-31 | 2015-08-13 | 株式会社鶴見製作所 | 自動運転型片水路水中ポンプ |
JP2018195751A (ja) * | 2017-05-19 | 2018-12-06 | アイシン精機株式会社 | 半導体装置 |
JP2019212809A (ja) * | 2018-06-06 | 2019-12-12 | トヨタ自動車株式会社 | 半導体装置 |
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DE102005050330B4 (de) | 2015-03-12 |
US7642640B2 (en) | 2010-01-05 |
DE102005050330A1 (de) | 2006-06-08 |
CN100594602C (zh) | 2010-03-17 |
US20060091512A1 (en) | 2006-05-04 |
CN1790692A (zh) | 2006-06-21 |
JP4338620B2 (ja) | 2009-10-07 |
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