CN1734247A - Ⅲ-ⅴ族氮化物系半导体衬底及其制造方法和ⅲ-ⅴ族氮化物系半导体 - Google Patents
Ⅲ-ⅴ族氮化物系半导体衬底及其制造方法和ⅲ-ⅴ族氮化物系半导体 Download PDFInfo
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- CN1734247A CN1734247A CN200510064396.7A CN200510064396A CN1734247A CN 1734247 A CN1734247 A CN 1734247A CN 200510064396 A CN200510064396 A CN 200510064396A CN 1734247 A CN1734247 A CN 1734247A
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02612—Formation types
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
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Abstract
Description
Claims (33)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2004-233701 | 2004-08-10 | ||
JP2004233701 | 2004-08-10 | ||
JP2004233701A JP4720125B2 (ja) | 2004-08-10 | 2004-08-10 | Iii−v族窒化物系半導体基板及びその製造方法並びにiii−v族窒化物系半導体 |
Related Child Applications (1)
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CN201110064859.5A Division CN102174713B (zh) | 2004-08-10 | 2005-04-15 | Ⅲ-v族氮化物系半导体衬底及其制造方法和ⅲ-v族氮化物系半导体 |
Publications (2)
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CN1734247A true CN1734247A (zh) | 2006-02-15 |
CN1734247B CN1734247B (zh) | 2011-07-20 |
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CN201110064859.5A Active CN102174713B (zh) | 2004-08-10 | 2005-04-15 | Ⅲ-v族氮化物系半导体衬底及其制造方法和ⅲ-v族氮化物系半导体 |
CN200510064396.7A Active CN1734247B (zh) | 2004-08-10 | 2005-04-15 | Ⅲ-ⅴ族氮化物系半导体衬底及其制造方法和ⅲ-ⅴ族氮化物系半导体 |
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CN201110064859.5A Active CN102174713B (zh) | 2004-08-10 | 2005-04-15 | Ⅲ-v族氮化物系半导体衬底及其制造方法和ⅲ-v族氮化物系半导体 |
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US (2) | US7230282B2 (zh) |
JP (1) | JP4720125B2 (zh) |
CN (2) | CN102174713B (zh) |
Cited By (4)
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CN102137961A (zh) * | 2009-06-29 | 2011-07-27 | 住友电气工业株式会社 | Iii族氮化物晶体及其制造方法 |
CN101573480B (zh) * | 2006-12-26 | 2014-08-13 | 信越半导体股份有限公司 | 氮化物半导体自立基板及其制造方法 |
CN105026625A (zh) * | 2013-02-08 | 2015-11-04 | 并木精密宝石株式会社 | GaN衬底及GaN衬底的制造方法 |
CN113348155A (zh) * | 2019-02-28 | 2021-09-03 | 住友电工硬质合金株式会社 | 立方晶氮化硼多晶体及其制造方法 |
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FI20045482A0 (fi) * | 2004-12-14 | 2004-12-14 | Optogan Oy | Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi |
US20080035052A1 (en) * | 2005-02-23 | 2008-02-14 | Genesis Photonics Inc. | Method for manufacturing a semiconductor substrate |
WO2006101225A1 (ja) * | 2005-03-22 | 2006-09-28 | Sumitomo Chemical Company, Limited | 自立基板、その製造方法及び半導体発光素子 |
JP4849296B2 (ja) * | 2005-04-11 | 2012-01-11 | 日立電線株式会社 | GaN基板 |
JP2006290677A (ja) * | 2005-04-11 | 2006-10-26 | Hitachi Cable Ltd | 窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体基板の製造方法 |
JP5023318B2 (ja) * | 2005-05-19 | 2012-09-12 | 国立大学法人三重大学 | 3−5族窒化物半導体積層基板、3−5族窒化物半導体自立基板の製造方法、及び半導体素子 |
KR20060127743A (ko) * | 2005-06-06 | 2006-12-13 | 스미토모덴키고교가부시키가이샤 | 질화물 반도체 기판과 그 제조 방법 |
JP2007019318A (ja) * | 2005-07-08 | 2007-01-25 | Sumitomo Chemical Co Ltd | 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法 |
GB2444448A (en) * | 2005-09-29 | 2008-06-04 | Sumitomo Chemical Co | Method for producing group 3-5 nitride semiconductor and method for manufacturing light-emitting device |
JP4879614B2 (ja) * | 2006-03-13 | 2012-02-22 | 住友化学株式会社 | 3−5族窒化物半導体基板の製造方法 |
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2004
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2005
- 2005-02-09 US US11/052,764 patent/US7230282B2/en active Active
- 2005-04-15 CN CN201110064859.5A patent/CN102174713B/zh active Active
- 2005-04-15 CN CN200510064396.7A patent/CN1734247B/zh active Active
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2007
- 2007-04-23 US US11/790,005 patent/US7790489B2/en not_active Expired - Fee Related
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CN102137961B (zh) * | 2009-06-29 | 2014-09-03 | 住友电气工业株式会社 | Iii族氮化物晶体及其制造方法 |
US8847363B2 (en) | 2009-06-29 | 2014-09-30 | Sumitomo Electric Industries, Ltd. | Method for producing group III nitride crystal |
US9368568B2 (en) | 2009-06-29 | 2016-06-14 | Sumitomo Electric Industries, Ltd. | Group III nitride crystal substrates and group III nitride crystal |
CN105026625A (zh) * | 2013-02-08 | 2015-11-04 | 并木精密宝石株式会社 | GaN衬底及GaN衬底的制造方法 |
CN113348155A (zh) * | 2019-02-28 | 2021-09-03 | 住友电工硬质合金株式会社 | 立方晶氮化硼多晶体及其制造方法 |
Also Published As
Publication number | Publication date |
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CN1734247B (zh) | 2011-07-20 |
JP4720125B2 (ja) | 2011-07-13 |
US20070212803A1 (en) | 2007-09-13 |
CN102174713B (zh) | 2012-07-04 |
CN102174713A (zh) | 2011-09-07 |
US7230282B2 (en) | 2007-06-12 |
US20060033119A1 (en) | 2006-02-16 |
JP2006052102A (ja) | 2006-02-23 |
US7790489B2 (en) | 2010-09-07 |
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