CN1574286A - 切割芯片焊接薄膜,固定碎片工件的方法及半导体器件 - Google Patents
切割芯片焊接薄膜,固定碎片工件的方法及半导体器件 Download PDFInfo
- Publication number
- CN1574286A CN1574286A CNA2004100464021A CN200410046402A CN1574286A CN 1574286 A CN1574286 A CN 1574286A CN A2004100464021 A CNA2004100464021 A CN A2004100464021A CN 200410046402 A CN200410046402 A CN 200410046402A CN 1574286 A CN1574286 A CN 1574286A
- Authority
- CN
- China
- Prior art keywords
- sensitive adhesive
- adhesive layer
- pressure sensitive
- workpiece
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000000034 method Methods 0.000 title claims description 30
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 134
- 239000010410 layer Substances 0.000 claims abstract description 117
- 239000000463 material Substances 0.000 claims abstract description 41
- 239000000853 adhesive Substances 0.000 claims description 123
- 230000001070 adhesive effect Effects 0.000 claims description 123
- 238000003466 welding Methods 0.000 claims description 120
- 238000005520 cutting process Methods 0.000 claims description 38
- 239000004821 Contact adhesive Substances 0.000 claims description 36
- 238000003847 radiation curing Methods 0.000 claims description 35
- 239000012634 fragment Substances 0.000 claims description 33
- 238000013461 design Methods 0.000 claims description 14
- 229920001187 thermosetting polymer Polymers 0.000 claims description 12
- 230000003760 hair shine Effects 0.000 claims description 2
- 239000012790 adhesive layer Substances 0.000 abstract 4
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 79
- -1 polyethylene Polymers 0.000 description 43
- 235000012431 wafers Nutrition 0.000 description 28
- 239000000178 monomer Substances 0.000 description 27
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 22
- 229920000058 polyacrylate Polymers 0.000 description 22
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 150000002148 esters Chemical class 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 13
- 125000006850 spacer group Chemical group 0.000 description 12
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 229920005601 base polymer Polymers 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 125000000524 functional group Chemical group 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 229920001577 copolymer Polymers 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 238000001723 curing Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000003431 cross linking reagent Substances 0.000 description 5
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000010186 staining Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- 241001050985 Disco Species 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000007334 copolymerization reaction Methods 0.000 description 4
- 239000000975 dye Substances 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 239000012948 isocyanate Substances 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000005060 rubber Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229920000800 acrylic rubber Polymers 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 150000002513 isocyanates Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920006267 polyester film Polymers 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Natural products CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- 239000004971 Cross linker Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 125000005250 alkyl acrylate group Chemical group 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 2
- 125000002843 carboxylic acid group Chemical group 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 125000004494 ethyl ester group Chemical group 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 229920001903 high density polyethylene Polymers 0.000 description 2
- 239000004700 high-density polyethylene Substances 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 229920001684 low density polyethylene Polymers 0.000 description 2
- 239000004702 low-density polyethylene Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920001083 polybutene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- LIZLYZVAYZQVPG-UHFFFAOYSA-N (3-bromo-2-fluorophenyl)methanol Chemical compound OCC1=CC=CC(Br)=C1F LIZLYZVAYZQVPG-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- FGTYTUFKXYPTML-UHFFFAOYSA-N 2-benzoylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 FGTYTUFKXYPTML-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- LRRQSCPPOIUNGX-UHFFFAOYSA-N 2-hydroxy-1,2-bis(4-methoxyphenyl)ethanone Chemical compound C1=CC(OC)=CC=C1C(O)C(=O)C1=CC=C(OC)C=C1 LRRQSCPPOIUNGX-UHFFFAOYSA-N 0.000 description 1
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- YRNDGUSDBCARGC-UHFFFAOYSA-N 2-methoxyacetophenone Chemical compound COCC(=O)C1=CC=CC=C1 YRNDGUSDBCARGC-UHFFFAOYSA-N 0.000 description 1
- AUZRCMMVHXRSGT-UHFFFAOYSA-N 2-methylpropane-1-sulfonic acid;prop-2-enamide Chemical compound NC(=O)C=C.CC(C)CS(O)(=O)=O AUZRCMMVHXRSGT-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical compound OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 description 1
- HOSGXJWQVBHGLT-UHFFFAOYSA-N 6-hydroxy-3,4-dihydro-1h-quinolin-2-one Chemical group N1C(=O)CCC2=CC(O)=CC=C21 HOSGXJWQVBHGLT-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- JPIYZTWMUGTEHX-UHFFFAOYSA-N auramine O free base Chemical compound C1=CC(N(C)C)=CC=C1C(=N)C1=CC=C(N(C)C)C=C1 JPIYZTWMUGTEHX-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical class OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229930006711 bornane-2,3-dione Natural products 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 238000004807 desolvation Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- MKPXKNNHBMTVFM-UHFFFAOYSA-N ethenylperoxyethane Chemical class CCOOC=C MKPXKNNHBMTVFM-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- FWQHNLCNFPYBCA-UHFFFAOYSA-N fluoran Chemical compound C12=CC=CC=C2OC2=CC=CC=C2C11OC(=O)C2=CC=CC=C21 FWQHNLCNFPYBCA-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229920001179 medium density polyethylene Polymers 0.000 description 1
- 239000004701 medium-density polyethylene Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- CJTMNDMKZBYLNA-UHFFFAOYSA-N n,n-dimethyl-1,1,1-triphenylmethanamine Chemical class C=1C=CC=CC=1C(C=1C=CC=CC=1)(N(C)C)C1=CC=CC=C1 CJTMNDMKZBYLNA-UHFFFAOYSA-N 0.000 description 1
- RMWHEYSKPOGJRK-UHFFFAOYSA-N n-methyl-n-trityloxymethanamine Chemical class C=1C=CC=CC=1C(C=1C=CC=CC=1)(ON(C)C)C1=CC=CC=C1 RMWHEYSKPOGJRK-UHFFFAOYSA-N 0.000 description 1
- LFJIAQOELDZMAR-UHFFFAOYSA-N n-methylprop-2-enamide;propane-1-sulfonic acid Chemical compound CNC(=O)C=C.CCCS(O)(=O)=O LFJIAQOELDZMAR-UHFFFAOYSA-N 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical class C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- OPECTNGATDYLSS-UHFFFAOYSA-N naphthalene-2-sulfonyl chloride Chemical compound C1=CC=CC2=CC(S(=O)(=O)Cl)=CC=C21 OPECTNGATDYLSS-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000010680 novolac-type phenolic resin Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- WQDGUYZIAJKLAB-UHFFFAOYSA-N octan-2-yl nitrite Chemical compound CCCCCCC(C)ON=O WQDGUYZIAJKLAB-UHFFFAOYSA-N 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229940059574 pentaerithrityl Drugs 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 125000002270 phosphoric acid ester group Chemical group 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005629 polypropylene homopolymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 229920001862 ultra low molecular weight polyethylene Polymers 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01016—Sulfur [S]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
- Y10T156/107—Punching and bonding pressure application by punch
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
- Y10T156/1075—Prior to assembly of plural laminae from single stock and assembling to each other or to additional lamina
- Y10T156/1077—Applying plural cut laminae to single face of additional lamina
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
- Y10T428/218—Aperture containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31703—Next to cellulosic
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Abstract
本发明的切割芯片焊接薄膜包含在支持基材(1)上的压敏粘合剂层(2)和在所述压敏粘合剂层(2)上的芯片焊接粘合剂层(3),其中在所述压敏粘合剂层(2)和芯片焊接粘合剂层(3)之间的界面中的释放力在界面(A)和界面(B)之间是不同的,所述的界面(A)对应于芯片焊接粘合剂层(3)中的工件附着区域(3a),且所述的界面(B)对应于其它区域(3b)的部分或全部,并且界面(A)的释放力高于界面(B)的释放力。根据本发明,可以提供在切割工件的保持力和在将切割碎片工件与芯片焊接粘合剂层一起释放的释放力之间的平衡方面优异的切割芯片焊接薄膜。
Description
技术领域
本发明涉及一种切割芯片焊接薄膜(dicing die-bonding film)。切割芯片焊接薄膜用于以这样一种状态将工件进行切割,即将用于将碎片工件(chipped work)(半导体芯片等)与电极材料粘接的粘合剂在切割前安置在工件(半导体晶片等)上。而且,本发明涉及一种通过使用切割芯片焊接薄膜而固定碎片工件的方法。此外,本发明涉及一种具有通过该固定方法粘合剂粘接的碎片工件的半导体器件。
背景技术
根据需要,其上形成电路图案的半导体晶片进行背面磨光以调节厚度之后,将其切割成为碎片工件(切割步骤)。在此切割步骤中,通常在适宜的流体压力(通常,约2kg/cm2)下清洗半导体晶片,以除去切割层。然后,向粘附物如引线框上粘合剂粘接该碎片工件(安装步骤),然后在粘接步骤中加工。在安装步骤中,常规地向引线框或碎片工件上涂布粘合剂。但是,在该方法中,难以形成均匀的粘合剂层,并且粘合剂的涂布需要特殊的装置和长时间。因而,提出了一种切割芯片焊接薄膜,其在切割步骤中具有在那里粘合半导体晶片的粘合剂层并且提供安装步骤所必须的芯片安装(参见,例如JP-A 60-57642)。
在上面的JP-A 60-57642中描述的切割芯片焊接薄膜包含在支持基材上以可脱离方式安置的粘合剂层。即,切割保留在粘合剂层上的半导体晶片,并且拉出支持基材,以将每块碎片工件与粘合剂层一起移走,并且回收每块工件且通过粘合剂层将其固定至粘附物如引线框上。
为了防止诸如不能切割和尺寸错误的问题,需要该切割芯片焊接薄膜的粘合剂层具有足够保持半导体晶片的能力和足够在切割后从支持基材将碎片工件与粘合剂层一起释放的能力。但是,这两种能力并不容易平衡。当特别是在用具有旋转圆弧齿切割半导体晶片的体系中,要求粘合剂层足够的保持力时,很难得到满足上面所述特性的切割芯片焊接薄膜。
为了克服所述的难题,提出了各种改进方法(参见,例如JP-A2-248064)。上面的JP-A 2-248064提出了一种方法,其包含使UV固化压敏粘合剂层存在于支持基材和粘合剂层之间,然后在切割后由UV射线将其固化,以降低压敏粘合剂层和粘合剂层之间的粘合力,由此使各层相互脱离,以有利于碎片工件的捡拾。
在许多情况下,由于生产方法的限制,在压敏粘合剂层(压敏粘合剂薄膜)的整个区域上要安置此种切割芯片焊接薄膜的芯片焊接(die-bonding)粘合剂层。但是,在此情况下,向芯片焊接粘合剂层粘接切割环,由此在某些情况下玷污了切割环。一方面,还有一种已知的方法,其中在压敏粘合剂层上形成芯片焊接粘合剂层,所述的芯片焊接粘合剂层的形状适应于工件的形状,以便与工件相同。但是,在这种情况下,芯片分散可能在切割期间发生。
发明内容
本发明的目的在于提供一种包含在支持基材上的压敏粘合剂层和在压敏粘合剂层上以可释放方式安置的芯片焊接粘合剂层的切割芯片焊接薄膜,其可以防止切割环的玷污并且可以同时防止在切割期间芯片的分散。
本发明的另一目的在于提供通过使用切割芯片焊接薄膜固定碎片工件的方法。本发明的再一目的在于提供一种包含通过该固定方法粘合剂粘接的碎片工件的半导体器件。
本发明人进行了深入细致研究以解决所述的难题,结果,他们发现下面所述的切割芯片焊接,由此得到了本发明:
即,本发明涉及一种切割芯片焊接薄膜,其包含在支持基材(1)上的压敏粘合剂层(2)和在所述压敏粘合剂层(2)上的芯片焊接粘合剂层(3),
其中所述芯片焊接粘合剂层(3)作为工件附着区域(3a)安置在部分所述压敏粘合剂层(2)上,
所述工件附着区域(3a)可以附着待附着的工件的表面的整个面积,并且大于工件表面的面积,和
设计所述工件附着区域(3a),以便将其保持于在所述压敏粘合剂层(2)上附着的切割环的内径之内。
在上面所述的发明中,设计在部分压敏粘合剂层(2)上作为工件附着区域(3a)的芯片焊接粘合剂层(3),以便将其保持于切割环的内径之内。因而,可以在工件附着区域(3a)周围在压敏粘合剂层(2)上安置切割环,并且可以防止切割环被芯片焊接粘合剂层(3)玷污。可以在压敏粘合剂层上没有玷污的条件下容易地回收切割环,并且可以重复地使用以改善再次加工。
一方面,工件附着区域(3a)可以附着待附着的工件的表面的整个面积,并且被设计为比工件表面的面积大。如此设计工件附着区域(3a)的原因在于,发现当工件附着区域(3a)的尺寸等于或小于工件表面时,在切割期间发生芯片分散(chip scattering),这是因为芯片焊接粘合剂层(3)从压敏粘合剂层(2)上的高度可释放性。即,根据本发明的设计,通过使工件附着区域(3a)的尺寸大于附着的工件表面,可以防止在切割期间芯片分散。设计工件附着区域(3a),以将其保持于切割环的内径之内,以便不与切割环接触。
在上面所述的切割芯片焊接薄膜中,优选所述压敏粘合剂层(2)的粘合力在相应于所述工件附着区域(3a)的区域(2a)和其它区域(2b)是不同的,并且满足下面的关系:
所述压敏粘合剂层(2a)的粘合力低于所述压敏粘合剂层(2b)的粘合力。
通过下面的方法,可以设计压敏粘合剂层(2)为容易释放的,即这样设计压敏粘合剂层(2),以便相应于所述工件附着区域(3a)的区域(2a)的粘合力和其它区域(2b)的粘合力满足如下关系:所述压敏粘合剂层(2a)的粘合力低于所述压敏粘合剂层(2b)的粘合力。一方面,晶片环可以粘接至压敏粘合剂(2b)上,并且可固定在那里,以便不在切割期间释放或膨胀。因此,可以得到能容易释放和捡拾作为没有劣级切割的切割碎片工件得到的10mm×10mm或更大的大芯片的切割芯片焊接薄膜。因此,切割焊接芯片薄膜可以很好平衡切割步骤期间的保持力和捡拾步骤期间的释放力。
在切割芯片焊接薄膜中,可以由辐射固化压敏粘合剂形成压敏粘合剂层(2),并且可以通过用辐照能照射它来形成相应于工件附着区域(3a)的压敏粘合剂层(2a)。
优选由热固性芯片粘合剂形成芯片焊接粘合剂层(3)。优选芯片焊接粘合剂层(3)不是导电性的。
此外,本发明涉及一种固定碎片工件的方法,该方法包含如下步骤:
向所述的切割芯片焊接薄膜中的芯片焊接粘合剂层(3a)上挤压工件,
将切割环压到所述压敏粘合剂层(2)上,
切割所述工件成为芯片(chips),
将碎片工件与芯片焊接粘合剂层(3a)一起从所述压敏粘合剂层(2)释放,和
通过所述的芯片焊接粘合剂层(3a)固定所述碎片工件至半导体元件。
此外,本发明涉及一种半导体器件,其包含通过向基材或芯片固定碎片工件的方法,通过由芯片焊接粘合剂(3a)固定在半导体元件上的碎片工件上。
附图简述
图1是本发明切割芯片焊接薄膜(1)的剖视图的一个实例。
图2是本发明另一种切割芯片焊接薄膜(1)的剖视图的一个实例。
具体实施方式
以下,通过参考附图描述本发明的切割芯片焊接薄膜。图1和2是本发明的切割芯片焊接薄膜的剖视图,它们都包含在支持基材(1)上的压敏粘合剂层(2)和在部分所述压敏粘合剂层(2)上作为芯片焊接粘合剂层(3)的工件(W)附着区域(3a)。
工件附着区域(3a)的表面(A)可以附着将附着的工件表面(B)的整个区域,并且被设计为比工件表面的区域大。通常优选这样设计工件附着区域(3a),以便其形状类似于并且大于工作表面。设计工件附着区域(3a),以便将其保持于切割环(WR)的内径所确定的框体内。所使用的切割环(WR)的大小取决于工件(W)的大小。
例如,当工件(W)的表面为直径(m1)的圆形时,设计工件附着区域(3a)为直径(m2)的圆形,其满足关系m2>m1。根据工件表面(B)的大小,适宜地确定宽度差(m2-m1),并且当工件表面的直径为1至12英寸(约300mm)时,优选设计宽度差通常为0.1mm或更大,特别优选为0.5mm或更大。在与切割环(WR)的内径(m3)的关系中,设计工件附着区域(3a)满足关系m3>m2。不特别限制差(m3-m2),但优选其为5mm或更大,特别优选为10mm或更大。当将工件(W)附着至工件附着区域(3a)时,优选在工件附着区域(3a)的整个外周边和工件表面的整个外周边之间的外周边宽度差(s)在沿着整个外周边接近于一致。即,优选这样附着工件,以便外周边宽度差(s)≈(m2-m1)/2。
图2所示为这样的实例,其中在粘合剂层(2)中,调节对应于工件(W)附着区域(3a)的部分(2a)的粘合力和其它区域(2b)的粘合力,以满足压敏粘合剂层(2a)的粘合力小于压敏粘合剂层(2b)的粘合力。
对于调节图2所示的压敏粘合剂层(2)的粘合力的方法,提及的有例如,一种由辐射固化压敏粘合剂形成压敏粘合剂层(2)且用辐照能照射对应于工件(W)附着区域(3a)的区域(2a)的方法。在此情况下,未用辐照能照射的压敏粘合剂层(2b)的粘合力大于压敏粘合剂层(2a)的粘合力。当晶片环应用于压敏粘合剂层(2b)时,在切割等时或切割后粘合剂固定晶片环,通过用辐照能照射可以容易地释放晶片环。
图2所示为这样的实例,其中建立压敏粘合剂层(2a)使其具有与工件(W)相同的大小,因此压敏粘合剂层(2a)的直径(m4)与工件(W)的直径(m1)相同。在此情况下,工件附着区域(3a)可以固定于宽度差(m2-m4)的区域,以便在切割等时不释放压敏粘合剂层(2b)。优选调节压敏粘合剂层(2a)的直径(m4)为m3≥m4≥m1。
支持基材(1)作为在切割焊接芯片薄膜上提供强度的材料。其实例包括聚烯烃如低密度聚乙烯,线性聚乙烯,中密度聚乙烯,高密度聚乙烯,超低密度聚乙烯,聚丙烯的无规共聚物,聚丙烯的嵌段共聚物,均聚丙烯,聚丁烯和聚甲基戊烯;乙烯-乙酸乙烯酯共聚物,离聚物树脂,乙烯/(甲基)丙烯酸共聚物,乙烯/(甲基)丙烯酸酯(无规,交替)共聚物,乙烯-丁烯共聚物,乙烯-己烯共聚物,聚氨酯,聚酯如聚对苯二甲酸乙二醇酯和聚苊,聚碳酸酯,聚酰亚胺,聚醚醚酮,聚酰亚胺,聚醚酰亚胺,聚酰胺,芳族聚酰胺,聚二苯硫醚(polyphenyl sulfide),芳族聚酰胺(纸),玻璃,玻璃布,氟树脂,聚氯乙烯,聚偏1,1-二氯乙烯,纤维素树脂,硅树脂,金属(箔片),纸等。
支持基材的材料包括聚合物如交联树脂。塑料薄膜可以是非拉伸的,或者根据需要,可以进行单轴或双轴拉伸处理。通过拉伸处理给予热收缩的树脂片可以使切割后的支持基材热收缩,由此减少压敏粘合剂层(2a)和粘合剂层(3a)之间的接触面积,有利于碎片工件的回收。
支持基材的表面可以进行常规改善与相邻层的粘合力和维持力的表面处理,例如化学或物理处理,如用铬酸盐的处理,接触臭氧的处理,接触火焰的处理,接触高压电击的处理,和用离子化辐照能的处理,或用底涂层(例如,下面所述的粘着材料)涂布处理。
支持基材的材料可以是相同的材料或不同材料的适宜混合物,并且如果需要,还可以使用几种材料的掺混物。此外,支持基材之上可以提供由金属、合金或它们的氧化物组成的厚度为30至500的导电性沉积物,以给予抗静电性能。支持基材可以由一层,两层或多层组成。当压敏粘合剂层(2)为辐射固化型时,使用部分传送辐照能如X射线,UV射线和电子射线的支持基材。
可以在没有特别限制的条件下,适宜地确定支持基材(1)的厚度,但其通常为约5至200μm。
对用于形成压敏粘合剂层(2)的压敏粘合剂没有特别限制,只要其可以以可释放的方式调节芯片焊接粘合剂层(3a)即可。例如,可以使用的压敏粘合剂有普通的压敏粘合剂如丙烯酸压敏粘合剂和橡胶压敏粘合剂。考虑到用超纯水或有机溶剂如醇对无污染物的电子部件如半导体晶片和玻璃的清洁和洗涤,优选压敏粘合剂为基于丙烯酸类聚合物的丙烯酸类压敏粘合剂。
丙烯酸类聚合物为例如使用一种或多种单体组分的丙烯酸类聚合物,所述的单体组分选自(甲基)丙烯酸烷基酯(例如,C1-30烷基,特别是C4-18直链或支链烷基酯,如甲酯,乙酯,丙酯,异丙酯,丁酯,异丁酯,仲丁酯,叔丁酯,戊酯,异戊酯,己酯,庚酯,辛酯,2-乙基己酯,异辛酯,壬酯,癸酯,异癸酯,十一烷基酯,十二烷基基酯,十三烷基酯,十四烷基酯,十六烷基酯,十八烷基酯,二十烷基酯等)和环烷基(甲基)丙烯酸酯(例如,环戊酯,环己酯等)。(甲基)丙烯酸酯是指丙烯酸酯和/或甲基丙烯酸酯,并且(甲基)按此含义用于本发明中。
为了改善内聚力和耐热性,丙烯酸类聚合物可以含有对应于可与上面所述的(甲基)丙烯酸酯和环烷基酯共聚合的其它单体组分的单元。这种单体组分包括,例如含有羧基的单体如丙烯酸,甲基丙烯酸,(甲基)丙烯酸羧乙酯,(甲基)丙烯酸羧戊酯,衣康酸,马来酸,富马酸和巴豆酸;酸酐单体如马来酸酐和衣康酸酐;含羟基的单体如(甲基)丙烯酸(2-羟乙)酯,(甲基)丙烯酸(2-羟丙)酯,(甲基)丙烯酸(4-羟丁)酯,(甲基)丙烯酸(6-羟己)酯,(甲基)丙烯酸(8-羟辛)酯,(甲基)丙烯酸(10-羟癸)酯,(甲基)丙烯酸(12-羟月桂)酯和(甲基)丙烯酸(4-羟甲基环己基)甲酯;含磺酸基的单体如对苯乙烯磺酸,烯丙基磺酸,2-(甲基)丙烯酰胺-2-甲基丙烷磺酸,(甲基)丙烯酰胺丙烷磺酸和(甲基)丙烯酸磺基丙酯,(甲基)丙烯酰基氧基萘磺酸;含磷酸酯基的单体如磷酸(2-羟乙基丙烯酰基)酯;和丙烯酰胺,丙烯腈等。可以使用这些可聚合单体组分中的一种或多种。优选基于所有单体组分,这些可聚合单体组分的量为40重量%或以下。
如果需要,丙烯酸类聚合物可以含有作为可共聚单体组分的待交联的多官能单体。多官能单体包括例如,二(甲基)丙烯酸己二醇酯,(多)乙二醇二(甲基)丙烯酸酯,(多)丙二醇二(甲基)丙烯酸酯,二(甲基)丙烯酸新戊二醇酯,季戊四醇二(甲基)丙烯酸酯,三羟甲基丙烷三(甲基)丙烯酸酯,季戊四醇三(甲基)丙烯酸酯,二季戊四醇六(甲基)丙烯酸酯,环氧(甲基)丙烯酸酯,聚酯(甲基)丙烯酸酯,氨基甲酸乙酯(甲基)丙烯酸酯等。可以使用这些多官能单体中的一种或多种。考虑到粘合性能等,优选基于所有的单体组分,多官能单体的量为30重量%或以下。
通过使单种单体或两种或多种单体的混合物进行聚合,得到丙烯酸类聚合物。可以在溶液聚合,乳液聚合,本体聚合和悬浮聚合的任何一种体系中进行聚合。考虑到防止清洁的粘附物受到污染,优选在丙烯酸类聚合物中低分子量的物质的含量低。在这方面,优选丙烯酸类聚合物的数均分子量为300,000或以上,更优选为约400,000至3,000,000。
为了增加作为基础聚合物的丙烯酸类等聚合物的数均分子量,压敏粘合剂可以适宜地使用外交联剂。外交联方法的具体手段包括一种通过加入交联剂如聚异氰酸酯化合物,环氧化合物和氮丙啶化合物,三聚氰胺基交联剂而使单体反应的方法。当使用外交联剂时,适宜地根据与将要交联的基础聚合物和压敏粘合剂的使用之平衡确定交联剂的量。一般而言,基于100重量份的基础聚合物,优选以5重量份或以下,更优选以0.1至5重量份的量混合外交联剂。如果需要,压敏粘合剂可以包括各种常规的添加剂如增粘剂,抗氧化剂等。
压敏粘合剂层(2)可以由辐射固化压敏粘合剂形成。辐射固化压敏粘合剂可以容易地通过下面的方法降低粘合力:通过用辐照能如UV射线的照射而增加交联度,并且可以用辐照能只照射压敏粘合剂层(2a),以提供与压敏粘合剂层(2b)的粘合力差。
此外,可以固化配备有工件附着区域(3a)的辐射固化压敏粘合剂层(2),以容易地提供粘合力显著降低的压敏粘合剂层(2a)。由于粘合剂层(3a)附着在其粘合力由于固化而降低的压敏粘合剂层(2a)中,在捡拾步骤自然容易分离压敏粘合剂层(2a)和粘合剂层(3a)之间的界面。另一方面,未用辐照能照射的区域具有足够的粘合力,并且形成压敏粘合剂层(2b)。
图2的切割芯片焊接薄膜中,由未固化的辐射固化压敏粘合剂制成的压敏粘合剂层(2b)可以固定如上所述的晶片环等。
可以在没有特别限制的条件下使用辐射固化压敏粘合剂,只要它具有辐射固化官能团如碳碳双键并且同时显示粘合力即可。辐射固化压敏粘合剂的实例包括:与普通压敏粘合剂如上面所述的丙烯酸类压敏粘合剂或橡胶压敏粘合剂复合的、包含辐射固化单体组分或低聚物组分的加成型辐射固化压敏粘合剂。
掺混的辐射固化单体组分包括例如,氨基甲酸乙酯低聚物,氨基甲酸乙酯(甲基)丙烯酸酯,三羟甲基丙烷三(甲基)丙烯酸酯,四羟甲基甲烷四(甲基)丙烯酸酯,季戊四醇三(甲基)丙烯酸酯,季戊四醇四(甲基)丙烯酸酯,二季戊四醇单羟基五(甲基)丙烯酸酯,二季戊四醇六(甲基)丙烯酸酯,1,4-丁二醇二(甲基)丙烯酸酯等。辐射固化低聚物组分包括各种低聚物,如基于氨基甲酸酯,聚醚,聚酯,聚碳酸酯和聚丁烯的那些低聚物,并且优选其分子量为约100至30000。根据压敏粘合剂层的类型,掺混的辐射固化单体组分和低聚物组分的量可以适宜地确定,以便降低压敏粘合剂层的粘合力。通常,基于100重量份构成压敏粘合剂的基础聚合物如丙烯酸类聚合物,其量为例如5至500重量份,优选为40至150重量份。
辐射固化压敏粘合剂不仅包括上面成述的加成型辐射固化压敏粘合剂,而且还包括内在型辐射固化压敏粘合剂,其使用在聚合物的侧链或主链或在主链的端部含有碳碳双键的基础聚合物。优选内在型辐射固化压敏粘合剂,原因在于它不需要结合低分子量组分如低聚物组分或者不含有大量的低聚物组分,从而可以形成具有稳定层结构的压敏粘合剂层,而在压敏粘合剂中没有低聚物组分等随着时间而移动。
可以没有特别限制地使用含有碳碳双键的基础聚合物,只要它含有碳碳双键并且同时具有粘合力。优选基础聚合物具有作为基本骨架的丙烯酸类聚合物。对于丙烯酸类聚合物的基本骨架,提及的有上面所示例的丙烯酸类聚合物。
不特别限制向丙烯酸类聚合物中引入碳碳双键的方法,并且可以使用各种方法,但是在分子设计中容易地向聚合物的侧链中引入碳碳双键。例如,可以提及一种其中含有官能团的单体与丙烯酸类聚合物共聚,然后使一种化合物与共聚物进行缩合或加成反应,所述的化合物含有碳碳双键和可以与上面所述的官能团反应、同时保持碳碳双键的辐射固化性能的官能团。
这些官能团的组合包括例如,羧酸基和环氧基,羧酸基和丫丙啶基(aziridyl),羟基和异氰酸酯基。在这些官能团的组合物中,为了容易监控反应,优选羟基和异氰酸酯基的组合。此外,如果这种官能团的组合是一种形成含有碳碳双键的聚丙烯酸类聚合物的组合,则官能团可以存在于丙烯酸类聚合物或上面所述的化合物中,并且在上面所述的优选组合中,优选丙烯酸类聚合物含有羟基,上面所述的化合物含有异氰酸酯基。在这样的情况下,含有碳碳双键的异氰酸酯化合物包括例如:甲基丙烯酰基异氰酸酯,2-甲基丙烯酰基乙氧基异氰酸酯,间-异丙烯基-α,α-二甲基苄基异氰酸酯等。对于丙烯酸类聚合物,使用的是通过共聚上面所示例的含有羟基的单体或醚化合物如2-羟乙基乙烯基醚、4-羟丁基乙烯基醚或二甘醇一乙烯基醚而制备的聚合物。
对于内在型辐射固化压敏粘合剂,可以单独使用含有碳碳双键的基础聚合物(尤其是丙烯酸类聚合物)。也可以复合辐射固化单体组分和低聚物组分至所述的特征不被劣化的程度。基于100重量份的基础聚合物,辐射固化低聚物组分的量通常为0至30重量份,优选为0至10重量份。
对于用UV射线等的固化,辐射固化压敏粘合剂掺混有光聚引发剂。光聚引发剂包括,例如α-酮醇化合物如4-(2-羟乙氧基)苯基(2-羟基-2-丙基)酮,α-羟基-α,α′-二甲基苯乙酮,2-甲基-2-羟苯丙酮和1-羟基环己基苯基酮;苯乙酮化合物如甲氧基苯乙酮,2,2-二甲氧基-2-苯基苯乙酮,2,2-二乙氧基苯乙酮和2-甲基-1-[4-(甲硫基)-苯基]-2-吗啉代丙烷-1;苯偶姻醚化合物如苯偶姻***,苯偶姻异丙醚和茴香偶姻甲醚;缩酮化合物如苄基二甲基缩酮;芳族磺酰氯化合物如2-萘磺酰氯;光学活性肟化合物如1-苯基酮-1,1-丙二酮-2-(邻-乙氧羰基)肟;苯甲酮化合物如苯甲酮,苯甲酰基苯甲酸和3,3’-二甲基-4-甲氧基苯甲酮;噻吨酮化合物如噻吨酮,2-氯噻吨酮,2-甲基噻吨酮,2,4-二甲基噻吨酮,异丙基噻吨酮,2,4-二氯噻吨酮,2,4-二乙基噻吨酮和2,4-二异丙基噻吨酮;樟脑醌;卤化酮;酰基氧化膦;和酰基膦酸酯。基于100重量份构成压敏粘合剂的的基础聚合物如丙烯酸类聚合物,掺混的光聚引发剂的量为0.05至20重量份。
辐射固化压敏粘合剂包括在JP-A60-196956中公开的压敏粘合剂,例如橡胶基压敏粘合剂和丙烯酸类压敏粘合剂,其包括:含有两个或多个不饱和键的可加聚化合物或含有环氧基的可光聚化合物如烷氧基硅烷和光聚引发剂如羰基化合物,有机硫化合物,过氧化物,胺或鎓盐基化合物。
如果需要,辐射固化压敏粘合剂层(2)还可以含有将通过辐照能照射而着色的化合物。通过将通过辐照能照射而着色的化合物结合入辐射固化压敏粘合剂层(2)中,可以仅将用辐照能照射的区域着色。即,可以将对应于工件附着区域(3a)的压敏粘合剂层(2a)着色。因而,可以用肉眼立即判断出压敏粘合剂层(2)是否已经用辐照照射,并且可以容易地识别工件附着区域(3a),以有利于工件的附着。此外,当得到的半导体元件通过光学传感器等检测时,提高了检测的准确度,由此防止在半导体元件的捡拾中的错误工作。
将通过辐照能照射而着色的化合物在用辐照能照射前是无色的或浅色的,但通过辐照能照射而着色。这种化合物的优选实例包括无色染料。优选所使用的无色染料是基于三苯基甲烷、荧烷(fluoran)、吩噻嗪、金胺和螺吡喃的常规染料。具体地,提及的有3-[N-(对-甲苯基氨基)]-7-苯胺基荧烷,3-[N-(对-甲苯基)-N-甲氨基]-7-苯胺基荧烷,3-[N-(对-甲苯基)-N-乙氨基]-7-苯胺基荧烷,3-二乙氨基-6-甲基-7-苯胺基荧烷,结晶紫内酯,4,4′,4″-三二甲氨基三苯基 甲醇和4,4′,4″-三二甲氨基三苯基 甲烷等。
优选与这些无色染料一起使用的显影剂包括电子受体,例如常规使用的苯酚甲醛树脂的初始聚合物,芳族羧酸衍生物,活性粘土等,并且可以与各种改变色调用的着色剂组合使用。
可以首先将通过辐照能照射而着色的化合物溶解于有机溶剂等中,然后结合入辐射固化压敏粘合剂中,或者首先细细地粉碎,然后结合入压敏粘合剂中。基于压敏粘合剂层(2),所使用的该化合物的比率为10重量%或以下,优选为0.01至10重量%,更优选为0.5至5重量%。当化合物的比率高于10重量%时,将太多施加给压敏粘合剂层(2)的辐照能吸收到该化合物中,因而压敏粘合剂层(2a)几乎不固化,由此不能充分地降低粘合力。另一方面,为了适宜地着色,优选该化合物的比率为0.01重量%或以上。
当由辐射固化压敏粘合剂形成压敏粘合剂层(2)时,优选这样用辐照能照射部分压敏粘合剂层(2),以便压敏粘合剂层(2a)的粘合力低于压敏粘合剂层(2b)的粘合力。在图2的切割芯片焊接薄膜中,压敏粘合剂层(2a)与作为粘附物的SUS304板(#2000抛光)的粘合力低于压敏粘合剂层(2b)与该板的粘合力。
对于形成压敏粘合剂层(2a)的方法,提及的有这样一种方法,其中在支持基材(1)上形成辐射固化压敏粘合剂层(2),并且通过辐照能的部分照射而固化对应于工件附着区域(3a)的区域,以形成压敏粘合剂层(2a)。辐照能的部分照射可以通过具有对应于除工件附着区域(3a)的区域外的区域(3b等)图案的光掩模而进行。还提及的有,一种通过UV射线的点照射而固化压敏粘合剂层的方法。可以通过将在隔离物上安置的层转移至支持基材(1),而进行辐射固化压敏粘合剂层(2)的形成。安置在隔离物上的辐射固化压敏粘合剂层(2)可以进行部分辐照能照射。
备选地,当由辐射固化压敏粘合剂形成压敏粘合剂层(2)时,可以使用这样的方法:其中支持基材(1)(其至少一侧除对应于工件附着区域(3a)的区域的全部或部分外被光屏蔽)提供有辐射固化压敏粘合剂层(2),然后在对应于工件附着区域(3a)的区域中固化,以形成其粘合力被降低的压敏粘合剂层(2a)。在支持薄膜上印刷或沉积可以作为光掩膜的材料可以制备光屏蔽材料。根据这种生产方法,可以有效地制备本发明的切割芯片焊接薄膜。
当在用辐照能照射过程中发生由于氧的固化抑制作用时,优选通过某些方法使辐射固化压敏粘合剂层(2)的表面与氧气(空气)隔离。这些方法包括用隔离物覆盖压敏粘合剂层(2)的表面,或者在氮气气氛中用辐照能如UV射线等照射。
不特别限制压敏粘合剂层(2)的厚度,但考虑到防止芯片的切割表面破裂并且同时保留粘合剂层,优选其为约1至50μm。更优选厚度为2至30μm,再更优选为5至25μm。
在将接触粘合在芯片焊接粘合剂层(3)上的工件(半导体晶片等)切割成为芯片时,粘合剂层(3)附着于并且支持工件,并且当被形成为切割碎片(半导体芯片等)的碎片工件将要安装时,粘合剂层用于固定碎片工件到半导体元件(基片,芯片等)上。特别重要的是芯片焊接粘合剂层(3)具有的粘合力不会使切割碎片在工件切割期间散开。在切割芯片焊接薄膜中,芯片焊接粘合剂层(3)安置在预先形成的工件附着区域(3a)中。
芯片焊接粘合剂层(3)可以由普通芯片粘合剂形成。优选芯片粘合剂是一种可以形成为薄片的粘合剂。芯片粘合剂的优选实例包括由热塑性或热固性树脂制成的芯片粘合剂。考虑到可以使粘合剂至工件的温度低并且耐热性由于固化而优异,优选压敏粘合剂是由热固化性树脂制成的芯片粘合剂。可以单独或者更多地其组合使用芯片粘合剂。优选芯片焊接粘合剂层是一种在70℃或更低可以附着至工件如半导体晶片或至切割环的层。更优选芯片焊接粘合剂层是一种可以在常温下附着的层。
用作芯片粘合剂(热塑性芯片粘合剂)的热塑性树脂包括例如饱和聚酯树脂,热塑性聚氨酯基树脂,酰胺基树脂(尼龙基树脂),酰亚胺基树脂等。热固性树脂(热固性芯片粘合剂)包括例如,环氧树脂,不饱和聚酯树脂,热固性丙烯酸类树脂,酚树脂等。优选热固性树脂为B段中的热固性树脂,其被去溶剂化并且形成为薄片。可以使用热固性树指和热塑性树脂的B段混合物。本发明中,还可以将例如基于硅氧烷,橡胶,氨基甲酸乙酯,酰亚胺和丙烯酰基的具有高玻璃化转变温度的那些树脂用作芯片粘合剂。
通过适宜地组合玻璃化转变温度不同的热塑性树脂或热固性温度不同的热固性树脂,芯片焊接粘合剂层(3)可以具有两层或以上的多层结构。由于切割工件(半导体晶片等)的步骤中使用切割用的水,芯片焊接粘合剂层(3)吸湿,得到比普通状态更高的水含量。当使具有这种高水含量的粘合剂层(3)与基片等粘结时,在后固化阶段水蒸汽可以保持于粘合剂的界面中,以导致提升作用。因而,如下构成芯片焊接粘合剂,以致于高度吸湿的薄膜夹在芯片粘合剂的中间,由此水蒸汽在后固化阶段扩散通过薄膜,以克服此问题。因而,芯片焊接粘合剂层(3)可以由具有按此顺序层压的粘合剂层,薄膜和粘合剂层的多层结构组成。
尽管不特别限制,但芯片焊接粘合剂层(3)的厚度例如为约5至100μm,优选为约10至50μm。
以此方式,得到切割芯片焊接薄膜(1)和(2),所述切割芯片焊接薄膜(1)和(2)包含在支持基材(1)上的压敏粘合剂层(2)和在所述压敏粘合剂层(2)上的芯片焊接粘合剂层(3)。
为了防止通过附着或释放产生静电,或由这种静电起电的工件(半导体晶片等)导致的电路破损,可以赋予芯片焊接粘合薄膜抗静电性能。可以以适宜的***,例如通过向支持基材(1),压敏粘合剂层(2)或粘合剂层(3a)添加抗静电剂或导电性材料,或通过为支持基材(1)提供由电荷转移复合体制成的静电层或金属薄膜,给予抗静电性能。优选该方式为一种不产生可以使半导体晶片变性的污染离子的***。为了赋予导电性,导热性等而加入的导电性材料(导电性填料)包括银、铝、金、铜、镍、导电性合金等的球形,针形或片状金属粉末,金属氧化物如氧化铝,无定形炭黑,石墨等。但是,考虑到防止漏电,优选芯片焊接粘合剂层(3a)是非导电性的。
在芯片焊接薄膜中,芯片焊接粘合剂层(3a)可以由隔离物(未示于图中)保护。即,可以任意地安置隔离物。隔离物作为保护使用前的芯片焊接粘合剂层(3)和(3a)的保护材料。此外,还可以将隔离物用作将芯片焊接粘合剂层(3a)转移至压敏粘合剂层(2)的支持基材。刚好在将工件粘着在切割芯片焊接薄膜中的芯片焊接粘合剂层(3a)上之前,除去隔离物。隔离物包括聚乙烯或聚丙烯薄膜,或涂布有脱离剂如氟脱离剂或长链烷基丙烯酸酯脱离剂的塑料薄膜和纸。
在除去粘合剂层(3a)上任意安置的隔离物之后,以下面的方式使用本发明的切割芯片焊接薄膜。即,向在切割芯片焊接薄膜中的芯片焊接粘合剂层(3a)挤压工件,并且将工件粘合剂粘接至粘合剂层(3a)上。此外,将切割环与压敏粘合剂层(2)接触粘接。以通常的方式进行本发明中的挤压。优选用于本发明中的工件是半导体晶片。然后,将工件切割成为芯片。工件包括例如半导体晶片,多层基片,同时密封的模具等。优选用于本发明中的工件是半导体晶片。通过切割,通过使用旋转圆弧齿的适宜装置,将具有粘合剂层(3a)的工件形成为碎片工件(半导体芯片等)。
然后,将碎片工件与芯片焊接粘合剂层(3a)一起与压敏粘合剂层(2a)分离。如此捡拾的碎片工件通过芯片焊接粘合剂层(3a)粘合剂粘接至作为粘附物的半导体元件上。半导体元件包括引线框,TAB薄膜,基片或单独制备的碎片工件。例如,粘附物可以是容易变形的变形粘附物,或难以形变的不变形附着物(半导体晶片等)。优选粘附物是半导体晶片。当粘合剂层(3a)是热固性时,通过热固化将工件粘合剂粘接至粘附物上,以改善耐热性。例如,可以将通过粘合剂层(3a)粘合剂粘接至基片上的碎片工件进行软熔处理。
实施例
以下,通过参考实施例将更详细地描述本发明。在下面的描述中,“份”是指重量份。对于用紫外线的照射,使用紫外(UV)照射装置(NEL UM-110(Nitto Seiki Co.,Ltd.))。
制备实施例(芯片焊接粘合剂层的制备)
以下表1中所示的比率混合表中所示的组分,即,环氧树脂,酚树脂,丙烯酸橡胶,二氧化硅和固化促进剂,以制备用于芯片粘合剂的组合物(A)至(C),并且将每一种组合物与甲苯混合且溶解在甲苯中。将混合的溶液涂布在用脱离剂处理的聚酯薄膜(隔离物)上。然后,于120℃干燥涂布有混合溶液的聚酯薄膜,以除去甲苯,由此得到20μm厚的在聚酯薄膜上的B段中芯片焊接粘合剂层A至C中的每一种。
表1
组合物 | 芯片焊接粘合剂(重量份) | ||
A | B | C | |
环氧树脂(a1) | 24.9 | 24.9 | 15.5 |
环氧树脂(a2) | 24.9 | 24.9 | 15.5 |
酚树脂 | 29.2 | 29.2 | 18 |
丙烯酸橡胶 | 20 | 20 | 50 |
二氧化硅 | 0 | 100 | 100 |
固化促进剂 | 1 | 1 | 1 |
表1中,
<环氧树脂(a1)>为双酚A型环氧树脂(环氧当量,186g/eq.;粘度,10Pa·s/25℃),
<环氧树脂(a2)>为三苯酚甲烷型环氧树脂(环氧当量,170g/eq.;软化点,80℃;粘度,0.08Pa·s/150℃),
<酚树脂>为线型酚醛清漆型苯酚树脂(羟基当量,104g/eq.;软化点,80℃;粘度,0.1Pa·s/150℃),
<丙烯酸橡胶>(门尼粘度:50),
<球形二氧化硅>平均颗粒直径,1μm,最大颗粒直径,10μm,和
<固化促进剂>为三苯膦。
实施例1
(辐射固化丙烯酸压敏粘合剂的制备)
在甲苯溶剂中共聚由100份的丙烯酸丁酯,5份的丙烯腈和5份的丙烯酸组成的组合物,得到含有浓度为35重量%、重均分子量为800,000的丙烯酸聚合物的溶液。向100重量份(固含量)的该丙烯酸聚合物溶液中加入5重量份的聚异氰酸酯基交联剂(由Nippon Polyurethane Industry Co.,Ltd.制备的Coronate L)。将它们均匀地溶解于甲苯中,以制备含有浓度为25重量%的丙烯酸压敏粘合剂溶液。
(切割芯片焊接薄膜的制备)
向厚度为60μm作为支持基材的聚乙烯薄膜上涂布上面所述的丙烯酸压敏粘合剂溶液并且干燥,以形成5μm厚的压敏粘合剂层。以下,将得到的产品称作压敏粘合剂薄膜A。然后,向压敏粘合剂薄膜A的压敏粘合剂层上转移芯片焊接粘合剂层A,得到切割芯片焊接薄膜。转移的芯片焊接粘合剂层A比工件表面(直径6英寸)的直径大0.5mm。
实施例2
以与实施例1相同的方式制备切割芯片焊接薄膜,不同之处在于使用的是芯片焊接粘合剂B而不是实施例1中的芯片焊接粘合剂A。转移的芯片焊接粘合剂层B比工件表面(直径6英寸)的直径大20mm。
实施例3
(辐射固化丙烯酸压敏粘合剂的制备)
在乙酸乙酯中以普通的方式共聚由70份的丙烯酸丁酯,30份的丙烯酸乙酯和5份的丙烯酸组成的组合物,得到含有浓度为30重量%、重均分子量为400,000的丙烯酸聚合物的溶液。其中100重量份(固含量)的该丙烯酸聚合物溶液中混合50重量份作为可光聚化合物的二季戊四醇一羟基五丙烯酸酯和3重量份作为光聚引发剂的α-羟基环己基苯基酮。将它们均匀地溶解于甲苯中,以制备含有浓度为25重量%的辐射固化丙烯酸压敏粘合剂溶液的溶液。
(切割芯片焊接薄膜的制备)
向厚度为80μm作为支持基材的聚乙烯薄膜上涂布上面所述的辐射固化丙烯酸压敏粘合剂溶液并且干燥,以形成5μm厚的压敏粘合剂层。以下,将得到的产品称作压敏粘合剂薄膜(B)。在压敏粘合剂薄膜(B)中,只有压敏粘合剂层的晶片附着区域(直径为6英寸的圆周),才用500mJ/cm2的UV射线(UV射线总强度)照射,得到具有其晶片附着区域被UV射线固化过的压敏粘合剂层的薄膜。然后,向压敏粘合剂薄膜(B)的压敏粘合剂层上转移芯片焊接粘合剂层(B),得到切割芯片焊接薄膜。转移的芯片焊接粘合剂层B比工件表面(直径6英寸)的直径大20mm。
实施例4
以与实施例3相同的方式制备切割芯片焊接薄膜,不同之处在于使用的是芯片焊接粘合剂层(C)而不是实施例3中的芯片焊接粘合剂(B)。
实施例5
以与实施例3相同的方式制备切割芯片焊接薄膜,不同之处在于使用的是芯片焊接粘合剂层(A)而不是实施例3中的芯片焊接粘合剂(B)。
比较例1
以与实施例1相同的方式制备切割芯片焊接薄膜,不同之处在于使用的是具有和工件表面(直径6英寸)相同的尺寸的芯片焊接粘合剂层A。
比较例2
以与实施例1相同的方式制备切割芯片焊接薄膜,不同之处在于使用的是具有与工件表面(直径6英寸)直径小2mm的芯片焊接粘合剂层A。
比较例3
以与实施例1相同的方式制备切割芯片焊接薄膜,不同之处在于将芯片焊接粘合薄膜A转移至压敏粘合剂薄膜A中的压敏粘合剂层的整个区域上。
对于实施例和比较例中得到的切割芯片焊接薄膜,对用于相应的实例中的压敏粘合剂薄膜和芯片焊接粘合剂层,根据JIS Z 0237,测量它们的粘合力如下。结果示于表2中。
(1)压敏粘合剂薄膜与SUS304板(#2000抛光)的粘合力测量
(晶片附着区域)
在没有用UV射线照射的条件下,将压敏粘合剂薄膜A切割成为10mm宽的矩形条。将压敏粘合剂薄膜B在其支持基材侧用UV射线(500mJ/cm2)照射,然后切割成为10mm宽的矩形条。然后,于23℃(室温),将压敏粘合剂薄膜(10mm宽)附着在SUS304板(#2000抛光)上,并且在室温的大气中放置30分钟,并且在23℃的恒温室中,在90°的剥离角剥离时,测量压敏粘合剂薄膜的粘合力(压敏粘合剂薄膜的应力速度(stress rate):300mm/分钟)。
(除晶片附着区域外的区域)
将压敏粘合剂薄膜A和B切割成为10mm宽的矩形条。然后,于23℃(室温),将压敏粘合剂薄膜(10mm宽)附着在SUS304板(#2000抛光)上,并且在室温的大气中放置30分钟,并且在23℃的恒温室中,在90°的剥离角剥离时,测量压敏粘合剂薄膜的粘合力(压敏粘合剂薄膜的应力速度:300mm/分钟)。
在半导体晶片中的实际切割芯片焊接中,对实施例1至5和比较例1至3的切割芯片焊接薄膜,按照下面的方法评价它们的性能。结果示于表2中。
<切割过程中芯片的分散>
使用的是0.15mm厚的具有电路图案形成其上的镜面晶片(mirrorwafer),它是通过研磨直径为6英寸的半导体晶片的背面而得到的。将隔离物与切割芯片焊接薄膜分离,并且通过于40℃挤压辊子而向暴露的粘合剂层接触粘接镜面晶片,然后进行完全切割成为1×1mm的方形芯片。检查在切割过程中芯片是否分散。在此过程中,实施例和比较例中的切割芯片焊接薄膜都没有引起故障如芯片在切割期间的分散。
<切割环的玷污>
用肉眼观察切割后切割环玷污与否。
(切割条件)
切割装置:由Disco制备的DFD-651
切割速度:80mm/秒
切割刀片:由Disco制备的2050HECC
旋转次数:40,000rpm
切割深度:20μm
切割方式:完全切割/模式(mole)A
芯片尺寸:任意(1×1mm至15×15mm平方)
(晶片研磨条件)
研磨装置:由Disco制备的DFG-840
晶片:6英寸直径(从背面0.6mm研磨至0.15μm)
晶片附着装置:DR-8500II(Nitto Seiki Co.,Ltd.)
(扩张条件)
切割环:2-6-1(内径19.5cm,由Disco制造)
向下移:5mm
芯片粘合器:CPS-100(NEC Kikai)
表2
实施例1 | 实施例2 | 实施例3 | 实施例4 | 实施例5 | 比较例1 | 比较例2 | 比较例3 | ||
芯片焊接粘合剂 | 类型 | A | B | B | C | A | A | A | A |
厚度(μm) | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | |
压敏粘合剂薄膜 | 类型 | A | A | B | B | B | A | A | A |
厚度(μm) | 65 | 65 | 85 | 85 | 85 | 85 | 65 | 65 | |
粘合剂层(3a)与工件的大小差 | +0.5 | +20 | +20 | +20 | +20 | 0 | -2.0 | 整个面积 | |
用UV射线照射晶片附着区域 | 晶片附着前 | 无 | 无 | 有 | 有 | 有 | 无 | 无 | 无 |
晶片附着后 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | |
压敏粘合剂薄膜与SUS304的粘合力(N/10mm) | 晶片附着区域 | 0.15 | 0.14 | 0.09 | 0.08 | 0.065 | 0.15 | 0.15 | 0.15 |
除晶片附着区域外的区域 | 0.15 | 0.14 | 3.8 | 4.8 | 3.55 | 0.15 | 0.15 | 0.15 | |
切割环的玷污 | 肉眼 | 无 | 无 | 无 | 无 | 无 | 无 | 无 | 有 |
芯片分散 | 切割/1×1mm平方 | 无 | 无 | 无 | 无 | 无 | 有 | 有 | 无 |
实施例1至5和比较例3中的切割芯片焊接薄膜没有显示故障如芯片在切割期间的分散。另一方面,比较例1和2中的切割芯片焊接薄膜显示出芯片的分散。在实施例1至5和比较例1和2中,没有发现切割环的玷污。另一方面,在比较例3中,粘合剂层与切割环的接触区域的整个面积接触,玷污了切割环。从这些测试结果清楚看出,在支持基材和粘合剂层之间具有压敏粘合剂层的切割芯片焊接薄膜,其中粘合剂层具有预定尺寸,可以防止切割环的玷污,并且同时抑制芯片的分散。
Claims (7)
1.一种切割芯片焊接薄膜,其包含在支持基材(1)上的压敏粘合剂层(2)和在所述压敏粘合剂层(2)上的芯片焊接粘合剂层(3),
其中所述芯片焊接粘合剂层(3)作为工件附着区域(3a)安置在部分所述压敏粘合剂层(2)上,
所述工件附着区域(3a)可以附着待附着的工件表面的整个面积,并且大于工件表面的面积,和
设计所述工件附着区域(3a),以便将其保持于在所述压敏粘合剂层(2)上粘着的切割环的内径之内。
2.根据权利要求1所述的切割芯片焊接薄膜,其中所述压敏粘合剂层(2)的粘合力在相应于所述工件附着区域(3a)的区域(2a)和其它区域(2b)是不同的,并且满足于下面的关系:
所述压敏粘合剂层(2a)的粘合力低于所述压敏粘合剂层(2b)的粘合力。
3.根据权利要求2所述的切割芯片焊接薄膜,其中所述的压敏粘合剂层(2)是由辐射固化压敏粘合剂形成的,并且对应于所述工件附着区域(3a)的所述压敏粘合剂层(2a)是用辐照能照射的。
4.根据权利要求1至3中任何一项所述的切割芯片焊接薄膜,其中所述的芯片焊接粘合剂层(3a)是由热固性芯片粘合剂形成的。
5.根据权利要求1至4中任何一项所述的切割芯片焊接薄膜,其中所述的芯片焊接粘合剂层(3a)不是导电性的。
6.一种固定碎片工件的方法,该方法包含如下步骤:
将工件压到权利要求1至5中任何一项所述的切割芯片焊接薄膜中的芯片焊接粘合剂层(3a)上,
将切割环压到压敏粘合剂层(2)上,
切割所述工件成为芯片,
将碎片工件和芯片焊接粘合剂层(3a)一起从所述压敏粘合剂层(2)中释放,和
通过所述的芯片焊接粘合剂层(3a)固定所述碎片工件至半导体元件上。
7.一种半导体器件,其包含由权利要求6所述的固定碎片工件的方法通过芯片焊接粘合剂(3a)固定在半导体元件上的碎片工件。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003152659 | 2003-05-29 | ||
JP2003152659A JP4283596B2 (ja) | 2003-05-29 | 2003-05-29 | チップ状ワークの固定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1574286A true CN1574286A (zh) | 2005-02-02 |
CN100337322C CN100337322C (zh) | 2007-09-12 |
Family
ID=33128276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100464021A Expired - Lifetime CN100337322C (zh) | 2003-05-29 | 2004-05-28 | 切割芯片焊接薄膜及固定碎片工件的方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7449226B2 (zh) |
EP (1) | EP1482546A3 (zh) |
JP (1) | JP4283596B2 (zh) |
KR (1) | KR100921855B1 (zh) |
CN (1) | CN100337322C (zh) |
SG (1) | SG116547A1 (zh) |
TW (1) | TWI323022B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102376611A (zh) * | 2010-07-28 | 2012-03-14 | 日东电工株式会社 | 半导体背面用膜、半导体背面用切割带集成膜、用于生产半导体器件的方法和半导体器件 |
CN102533173A (zh) * | 2010-12-30 | 2012-07-04 | 第一毛织株式会社 | 光学透明粘结剂、切割芯片接合膜和半导体器件 |
CN102653661A (zh) * | 2011-03-01 | 2012-09-05 | 古河电气工业株式会社 | 晶片加工用胶带 |
CN102714489A (zh) * | 2010-03-04 | 2012-10-03 | 株式会社大真空 | 电子器件封装体用密封部件、电子器件封装体、以及电子器件封装体用密封部件的制造方法 |
US8912665B2 (en) | 2009-06-15 | 2014-12-16 | Nitto Denko Corporation | Dicing tape-integrated film for semiconductor back surface |
CN113131890A (zh) * | 2019-12-30 | 2021-07-16 | 中芯集成电路(宁波)有限公司 | 封装结构的制造方法 |
CN113172684A (zh) * | 2021-04-26 | 2021-07-27 | 中国五冶集团有限公司 | 一种预铺式tpo防水卷材的自动切割装置 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4107417B2 (ja) * | 2002-10-15 | 2008-06-25 | 日東電工株式会社 | チップ状ワークの固定方法 |
EP1591504B1 (en) * | 2003-02-05 | 2012-05-23 | The Furukawa Electric Co., Ltd. | Pressure-sensitive adhesive tape for pasting wafer thereto |
JP4283596B2 (ja) * | 2003-05-29 | 2009-06-24 | 日東電工株式会社 | チップ状ワークの固定方法 |
JP4275522B2 (ja) * | 2003-12-26 | 2009-06-10 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4443962B2 (ja) * | 2004-03-17 | 2010-03-31 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4800694B2 (ja) * | 2005-07-26 | 2011-10-26 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
US7908874B2 (en) * | 2006-05-02 | 2011-03-22 | Raytheon Company | Method and apparatus for cooling electronics with a coolant at a subambient pressure |
KR101370245B1 (ko) * | 2006-05-23 | 2014-03-05 | 린텍 가부시키가이샤 | 점접착제 조성물, 점접착 시트 및 반도체장치의 제조방법 |
US20100019365A1 (en) * | 2006-09-12 | 2010-01-28 | Nitto Denko Corporation | Dicing/die bonding film |
EP2068352A4 (en) * | 2006-10-06 | 2010-04-28 | Sumitomo Bakelite Co | FILM FOR A SEMICONDUCTOR, METHOD FOR PRODUCING A FILM FOR A SEMICONDUCTOR AND SEMICONDUCTOR COMPONENT |
KR20080047990A (ko) * | 2006-11-27 | 2008-05-30 | 린텍 가부시키가이샤 | 점접착제 조성물, 점접착 시트 및 반도체 장치의 제조방법 |
JP5000321B2 (ja) * | 2007-02-05 | 2012-08-15 | 日東電工株式会社 | 粘着剤層の製造方法 |
JP4430085B2 (ja) | 2007-03-01 | 2010-03-10 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP2008247936A (ja) * | 2007-03-29 | 2008-10-16 | Lintec Corp | 粘接着剤組成物、粘接着シートおよび半導体装置の製造方法 |
JP4717051B2 (ja) * | 2007-11-08 | 2011-07-06 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4717052B2 (ja) * | 2007-11-08 | 2011-07-06 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4717085B2 (ja) * | 2008-01-18 | 2011-07-06 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4717086B2 (ja) * | 2008-01-18 | 2011-07-06 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4553400B2 (ja) * | 2008-02-18 | 2010-09-29 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP2009246216A (ja) * | 2008-03-31 | 2009-10-22 | Sumitomo Bakelite Co Ltd | 半導体加工用粘着テープ |
JP4801127B2 (ja) * | 2008-09-01 | 2011-10-26 | 日東電工株式会社 | ダイシング・ダイボンドフィルムの製造方法 |
TW201043674A (en) * | 2009-04-17 | 2010-12-16 | Furukawa Electric Co Ltd | Adhesive thin film and wafer processing tape |
JP5842317B2 (ja) * | 2009-04-21 | 2016-01-13 | 日立化成株式会社 | 半導体装置の製造方法、及び半導体装置 |
JP5743110B2 (ja) | 2009-06-15 | 2015-07-01 | エルジー・ケム・リミテッド | ウェーハ加工用シート |
WO2011132647A1 (ja) * | 2010-04-19 | 2011-10-27 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム |
WO2012008491A1 (ja) * | 2010-07-13 | 2012-01-19 | 日立化成工業株式会社 | ダイシング・ダイボンディング一体型フィルム、ダイシング・ダイボンディング一体型フィルムの製造方法、及び半導体チップの製造方法 |
EP2671249A4 (en) | 2011-02-01 | 2015-10-07 | Henkel IP & Holding GmbH | FILLING FILM APPLIED TO A PRE-CUTTING WAFER |
JP2014511560A (ja) | 2011-02-01 | 2014-05-15 | ヘンケル コーポレイション | プレカットされウェハに塗布されるダイシングテープ上のアンダーフィル膜 |
JP5807340B2 (ja) * | 2011-02-18 | 2015-11-10 | 日立化成株式会社 | ダイシングテープ一体型接着シート |
JP5807341B2 (ja) * | 2011-02-18 | 2015-11-10 | 日立化成株式会社 | ダイシングテープ一体型接着シート |
CN102842541A (zh) * | 2011-06-22 | 2012-12-26 | 日东电工株式会社 | 层叠膜及其使用 |
JP2013021109A (ja) * | 2011-07-11 | 2013-01-31 | Disco Abrasive Syst Ltd | 粘着シート及び粘着シートを用いた円板状被加工物の加工方法 |
JP5598865B2 (ja) * | 2011-12-16 | 2014-10-01 | 古河電気工業株式会社 | ウエハ加工用テープ |
JP6021433B2 (ja) * | 2012-05-23 | 2016-11-09 | 株式会社ディスコ | テープ |
KR101635265B1 (ko) * | 2013-06-19 | 2016-07-01 | 주식회사 엘지화학 | 점착 필름 |
WO2015178369A1 (ja) * | 2014-05-23 | 2015-11-26 | 日立化成株式会社 | ダイボンドダイシングシート |
WO2016006719A1 (ja) * | 2014-07-07 | 2016-01-14 | リンテック株式会社 | 表面保護フィルム |
JP6613516B2 (ja) * | 2014-07-07 | 2019-12-04 | リンテック株式会社 | 表面保護フィルム |
JP2018127518A (ja) * | 2017-02-07 | 2018-08-16 | 古河電気工業株式会社 | 接着シートおよびその製造方法 |
JP2020113678A (ja) * | 2019-01-15 | 2020-07-27 | 株式会社ディスコ | 被加工物ユニット |
Family Cites Families (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IE55238B1 (en) | 1983-08-03 | 1990-07-04 | Nat Starch Chem Corp | Carrier film with conductive adhesive for dicing of semiconductor wafers |
US4961804A (en) | 1983-08-03 | 1990-10-09 | Investment Holding Corporation | Carrier film with conductive adhesive for dicing of semiconductor wafers and dicing method employing same |
US4664739A (en) | 1983-12-19 | 1987-05-12 | Stauffer Chemical Company | Removal of semiconductor wafers from dicing film |
CA1222071A (en) | 1984-01-30 | 1987-05-19 | Joseph A. Aurichio | Conductive die attach tape |
JPH0616524B2 (ja) | 1984-03-12 | 1994-03-02 | 日東電工株式会社 | 半導体ウエハ固定用接着薄板 |
FR2580416B1 (fr) * | 1985-04-12 | 1987-06-05 | Radiotechnique Compelec | Procede et dispositif pour fabriquer une carte d'identification electronique |
JPS61263136A (ja) | 1985-05-15 | 1986-11-21 | Nitto Electric Ind Co Ltd | 薄板物品の支持テ−ブル |
US4687693A (en) | 1985-06-13 | 1987-08-18 | Stauffer Chemical Company | Adhesively mountable die attach film |
JPS6279649A (ja) | 1985-10-03 | 1987-04-13 | Mitsui Toatsu Chem Inc | 半導体ダイシング方法 |
JPH01268131A (ja) | 1988-04-20 | 1989-10-25 | Nitto Denko Corp | 半導体ウエハの保護部材 |
JP2678655B2 (ja) | 1989-03-20 | 1997-11-17 | 日東電工株式会社 | 半導体チップ固着キャリヤの製造方法及びウエハ固定部材 |
JPH02265258A (ja) | 1989-04-05 | 1990-10-30 | Fujitsu Ltd | ダイシング装置 |
EP0431637B1 (en) | 1989-12-08 | 1993-06-02 | Sumitomo Electric Industries, Ltd. | Pickup method and the pickup apparatus for a chip-type part |
JPH0442555A (ja) | 1990-06-08 | 1992-02-13 | Sumitomo Electric Ind Ltd | チップ状部品のピックアップ装置とピックアップ方法 |
JPH0578629A (ja) | 1991-09-18 | 1993-03-30 | Furukawa Electric Co Ltd:The | 放射線硬化性粘着テープ |
JPH05179211A (ja) | 1991-12-30 | 1993-07-20 | Nitto Denko Corp | ダイシング・ダイボンドフイルム |
EP0571649A1 (en) | 1992-05-26 | 1993-12-01 | Nitto Denko Corporation | Dicing-die bonding film and use thereof in a process for producing chips |
DE4230784A1 (de) | 1992-09-15 | 1994-03-17 | Beiersdorf Ag | Durch Strahlung partiell entklebendes Selbstklebeband (Dicing Tape) |
SE470501B (sv) * | 1992-10-07 | 1994-06-06 | Ericsson Telefon Ab L M | Förfarande vid montering på ett substrat av en TAB-krets, varvid TAB-strukturens anslutningar utgörs av ett elektriskt ledande anslutningsmönster som framställts på en filmremsa och vilket är anslutet till TAB-strukturens halvledarkretsbricka |
JPH07263382A (ja) | 1994-03-24 | 1995-10-13 | Kawasaki Steel Corp | ウェーハ固定用テープ |
JP3521099B2 (ja) | 1994-11-29 | 2004-04-19 | リンテック株式会社 | ダイシング用リングフレームへの接着剤の付着防止用粘着シートおよび該粘着シートを備えたウェハ加工用シート |
JP3186510B2 (ja) | 1995-06-09 | 2001-07-11 | 株式会社村田製作所 | 圧電共振部品及びその製造方法 |
MY118036A (en) | 1996-01-22 | 2004-08-30 | Lintec Corp | Wafer dicing/bonding sheet and process for producing semiconductor device |
US6007920A (en) * | 1996-01-22 | 1999-12-28 | Texas Instruments Japan, Ltd. | Wafer dicing/bonding sheet and process for producing semiconductor device |
TW340860B (en) | 1996-02-28 | 1998-09-21 | Nippon Chemicals Pharmaceutical Co Ltd | Liquid composition |
US6312800B1 (en) * | 1997-02-10 | 2001-11-06 | Lintec Corporation | Pressure sensitive adhesive sheet for producing a chip |
JPH10335271A (ja) | 1997-06-02 | 1998-12-18 | Texas Instr Japan Ltd | ウェハ貼着用シートおよび半導体装置の製造方法 |
JP3955659B2 (ja) | 1997-06-12 | 2007-08-08 | リンテック株式会社 | 電子部品のダイボンディング方法およびそれに使用されるダイボンディング装置 |
JP3097619B2 (ja) | 1997-10-02 | 2000-10-10 | 日本電気株式会社 | 電界放射冷陰極の製造方法 |
US6140151A (en) | 1998-05-22 | 2000-10-31 | Micron Technology, Inc. | Semiconductor wafer processing method |
JP3669196B2 (ja) | 1998-07-27 | 2005-07-06 | 日東電工株式会社 | 紫外線硬化型粘着シート |
JP3784202B2 (ja) | 1998-08-26 | 2006-06-07 | リンテック株式会社 | 両面粘着シートおよびその使用方法 |
JP2000223446A (ja) * | 1998-11-27 | 2000-08-11 | Denso Corp | 半導体装置およびその製造方法 |
JP3511929B2 (ja) | 1999-01-25 | 2004-03-29 | 株式会社村田製作所 | 電子部品の製造方法、圧電共振部品の製造方法、電子部品及び圧電共振部品 |
US7054161B1 (en) | 2000-04-19 | 2006-05-30 | James Stephen L | Slotted adhesive for die-attach in BOC and LOC packages |
EP1156521A3 (en) | 2000-04-24 | 2007-05-23 | Interuniversitair Microelektronica Centrum Vzw | Low cost electroless plating process for single chips and wafer parts and products obtained thereof |
US6938783B2 (en) | 2000-07-26 | 2005-09-06 | Amerasia International Technology, Inc. | Carrier tape |
JP3605009B2 (ja) * | 2000-08-03 | 2004-12-22 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP4109823B2 (ja) | 2000-10-10 | 2008-07-02 | 株式会社東芝 | 半導体装置の製造方法 |
JP2002158276A (ja) | 2000-11-20 | 2002-05-31 | Hitachi Chem Co Ltd | ウエハ貼着用粘着シートおよび半導体装置 |
JP2002226800A (ja) | 2001-02-05 | 2002-08-14 | Hitachi Chem Co Ltd | 接着シート、その使用方法及び半導体装置 |
JP4674836B2 (ja) | 2001-02-13 | 2011-04-20 | 日東電工株式会社 | ダイシング用粘着シート |
JP2002299378A (ja) | 2001-03-30 | 2002-10-11 | Lintec Corp | 導電体付接着シート、半導体装置製造方法および半導体装置 |
JP2003007646A (ja) | 2001-06-18 | 2003-01-10 | Nitto Denko Corp | ダイシング用粘着シートおよび切断片の製造方法 |
JP2003056248A (ja) | 2001-08-09 | 2003-02-26 | Koito Mfg Co Ltd | 窓昇降装置 |
JP4869517B2 (ja) * | 2001-08-21 | 2012-02-08 | リンテック株式会社 | 粘接着テープ |
JP3969994B2 (ja) | 2001-10-16 | 2007-09-05 | 電気化学工業株式会社 | 電子部材用粘着テープ |
US20030118071A1 (en) | 2001-12-20 | 2003-06-26 | Eastman Kodak Company | Laser array and method of making same |
JP2003206468A (ja) | 2002-01-16 | 2003-07-22 | Asahi Kasei Corp | ウエハー固定用粘着剤ならびに加工方法 |
JP2004231932A (ja) * | 2002-12-02 | 2004-08-19 | Nitto Denko Corp | 接着剤組成物、接着フィルムおよびこれを用いた半導体装置 |
JP2003316031A (ja) | 2002-04-24 | 2003-11-06 | Mejiro Precision:Kk | 基準部形成装置 |
US20050224978A1 (en) * | 2002-06-24 | 2005-10-13 | Kohichiro Kawate | Heat curable adhesive composition, article, semiconductor apparatus and method |
JP2004063953A (ja) | 2002-07-31 | 2004-02-26 | Ube Ind Ltd | ダイシングテ−プ |
JP4107417B2 (ja) | 2002-10-15 | 2008-06-25 | 日東電工株式会社 | チップ状ワークの固定方法 |
JP4219660B2 (ja) | 2002-11-18 | 2009-02-04 | 信越化学工業株式会社 | ウエハダイシング・ダイボンドシート |
JP3966808B2 (ja) | 2002-12-03 | 2007-08-29 | 古河電気工業株式会社 | 粘接着テープ |
SG116533A1 (en) * | 2003-03-26 | 2005-11-28 | Toshiba Kk | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device. |
JP3710457B2 (ja) | 2003-05-22 | 2005-10-26 | 住友ベークライト株式会社 | ダイシングシート機能付きダイアタッチフィルム、それを用いた半導体装置の製造方法及び半導体装置 |
JP4283596B2 (ja) | 2003-05-29 | 2009-06-24 | 日東電工株式会社 | チップ状ワークの固定方法 |
JP2005005355A (ja) | 2003-06-10 | 2005-01-06 | Nitto Denko Corp | ダイシング・ダイボンドフィルム |
JP4610168B2 (ja) * | 2003-08-06 | 2011-01-12 | スリーエム イノベイティブ プロパティズ カンパニー | 耐熱マスキングテープ |
JP2005159069A (ja) | 2003-11-27 | 2005-06-16 | Furukawa Electric Co Ltd:The | ダイシング用粘接着テープ |
JP4405246B2 (ja) * | 2003-11-27 | 2010-01-27 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体チップの製造方法 |
JP4472316B2 (ja) * | 2003-11-28 | 2010-06-02 | 日東電工株式会社 | 粘着テープ切断方法及び粘着テープ切断装置 |
JP4275522B2 (ja) * | 2003-12-26 | 2009-06-10 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4443962B2 (ja) | 2004-03-17 | 2010-03-31 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
US20070003758A1 (en) * | 2004-04-01 | 2007-01-04 | National Starch And Chemical Investment Holding Corporation | Dicing die bonding film |
US20050227064A1 (en) * | 2004-04-01 | 2005-10-13 | Hwail Jin | Dicing die bonding film |
JP4393934B2 (ja) | 2004-06-23 | 2010-01-06 | リンテック株式会社 | 半導体加工用粘着シート |
US20060252234A1 (en) * | 2004-07-07 | 2006-11-09 | Lintec Corporation | Hardenable pressure sensitive adhesive sheet for dicing/die-bonding and method for manufacturing semiconductor device |
USD549189S1 (en) | 2004-09-21 | 2007-08-21 | Nitto Denko Corporation | Dicing die-bonding film |
JP4800778B2 (ja) | 2005-05-16 | 2011-10-26 | 日東電工株式会社 | ダイシング用粘着シート及びそれを用いた被加工物の加工方法 |
JP5046366B2 (ja) * | 2005-10-20 | 2012-10-10 | 信越化学工業株式会社 | 接着剤組成物及び該接着剤からなる接着層を備えたシート |
JP2007150065A (ja) * | 2005-11-29 | 2007-06-14 | Shin Etsu Chem Co Ltd | ダイシング・ダイボンド用接着テープ |
JP4789663B2 (ja) * | 2006-03-17 | 2011-10-12 | 信越化学工業株式会社 | 熱硬化性組成物及び該組成物から得られる層を備えたフィルム |
KR100773634B1 (ko) * | 2006-10-26 | 2007-11-05 | 제일모직주식회사 | 아크릴 바인더 수지조성물를 포함하는 광경화형 점착조성물및 이를 이용한 점착테이프 |
-
2003
- 2003-05-29 JP JP2003152659A patent/JP4283596B2/ja not_active Expired - Fee Related
-
2004
- 2004-05-04 TW TW93112505A patent/TWI323022B/zh active
- 2004-05-14 SG SG200402611A patent/SG116547A1/en unknown
- 2004-05-19 US US10/849,414 patent/US7449226B2/en not_active Expired - Fee Related
- 2004-05-24 EP EP20040012260 patent/EP1482546A3/en not_active Withdrawn
- 2004-05-28 KR KR1020040038567A patent/KR100921855B1/ko active IP Right Grant
- 2004-05-28 CN CNB2004100464021A patent/CN100337322C/zh not_active Expired - Lifetime
-
2007
- 2007-02-06 US US11/671,982 patent/US7780811B2/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8912665B2 (en) | 2009-06-15 | 2014-12-16 | Nitto Denko Corporation | Dicing tape-integrated film for semiconductor back surface |
CN102714489A (zh) * | 2010-03-04 | 2012-10-03 | 株式会社大真空 | 电子器件封装体用密封部件、电子器件封装体、以及电子器件封装体用密封部件的制造方法 |
CN102714489B (zh) * | 2010-03-04 | 2015-06-03 | 株式会社大真空 | 电子器件封装体用密封部件、电子器件封装体、以及电子器件封装体用密封部件的制造方法 |
CN102376611A (zh) * | 2010-07-28 | 2012-03-14 | 日东电工株式会社 | 半导体背面用膜、半导体背面用切割带集成膜、用于生产半导体器件的方法和半导体器件 |
CN102533173A (zh) * | 2010-12-30 | 2012-07-04 | 第一毛织株式会社 | 光学透明粘结剂、切割芯片接合膜和半导体器件 |
US9133367B2 (en) | 2010-12-30 | 2015-09-15 | Cheil Industries, Inc. | Optically clear adhesive for dicing die bonding film |
CN102653661A (zh) * | 2011-03-01 | 2012-09-05 | 古河电气工业株式会社 | 晶片加工用胶带 |
CN102653661B (zh) * | 2011-03-01 | 2014-03-12 | 古河电气工业株式会社 | 晶片加工用胶带 |
CN113131890A (zh) * | 2019-12-30 | 2021-07-16 | 中芯集成电路(宁波)有限公司 | 封装结构的制造方法 |
CN113172684A (zh) * | 2021-04-26 | 2021-07-27 | 中国五冶集团有限公司 | 一种预铺式tpo防水卷材的自动切割装置 |
Also Published As
Publication number | Publication date |
---|---|
US20070137782A1 (en) | 2007-06-21 |
JP2004356412A (ja) | 2004-12-16 |
TW200504931A (en) | 2005-02-01 |
CN100337322C (zh) | 2007-09-12 |
KR100921855B1 (ko) | 2009-10-13 |
US20040241910A1 (en) | 2004-12-02 |
JP4283596B2 (ja) | 2009-06-24 |
KR20040103450A (ko) | 2004-12-08 |
EP1482546A3 (en) | 2005-03-02 |
SG116547A1 (en) | 2005-11-28 |
EP1482546A2 (en) | 2004-12-01 |
US7449226B2 (en) | 2008-11-11 |
TWI323022B (en) | 2010-04-01 |
US7780811B2 (en) | 2010-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100337322C (zh) | 切割芯片焊接薄膜及固定碎片工件的方法 | |
CN1169898C (zh) | 粘接带 | |
CN1497703A (zh) | 切割/冲模-结合膜,固定碎片机件和半导体设备的方法 | |
US8212345B2 (en) | Holding jig, semiconductor wafer grinding method, semiconductor wafer protecting structure and semiconductor wafer grinding method and semiconductor chip fabrication method using the structure | |
CN1137028C (zh) | 压敏粘合片及其使用方法 | |
CN1147555C (zh) | 双面涂覆的压敏粘合片及其使用方法 | |
CN1145202C (zh) | 用于晶片背磨的表面保护片及其使用方法 | |
CN1906737A (zh) | 晶片加工用带 | |
CN1098902C (zh) | 压敏粘合剂组合物及其应用 | |
CN1864248A (zh) | 晶片加工带及其制造方法 | |
CN1580168A (zh) | 再剥离型粘合片材 | |
CN1136283C (zh) | 用能量射束可固化的亲水性压敏粘合剂组合物及其用途 | |
CN1883044A (zh) | 半导体表面护板和方法 | |
JP6091954B2 (ja) | 粘着シート、保護膜形成用フィルム、保護膜形成用複合シート、およびマーキング方法 | |
CN1865376A (zh) | 用于切割的压敏粘合片以及使用其的工件的加工方法 | |
CN1309156A (zh) | 用于粘合晶片的压敏粘合剂片 | |
CN1927978A (zh) | 粘合片和使用该粘合片的制品的加工方法 | |
KR101558834B1 (ko) | 반도체 가공용 점착 테이프 | |
CN1670942A (zh) | 切割模片粘接膜 | |
KR20100138903A (ko) | 점착 시트 | |
KR20150048112A (ko) | 보호막 형성층이 부착된 다이싱 시트 및 칩의 제조 방법 | |
WO2013061925A1 (ja) | 半導体デバイス加工用粘着テープ | |
CN1643657A (zh) | 半导体晶片表面保护用粘结膜及用该粘结膜的半导体晶片的保护方法 | |
CN1827367A (zh) | 多层片材及其制造方法和使用这种多层片材的粘合片材 | |
WO2011125683A1 (ja) | 半導体ウエハ加工用粘着シート |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20070912 |