CN102376611A - 半导体背面用膜、半导体背面用切割带集成膜、用于生产半导体器件的方法和半导体器件 - Google Patents
半导体背面用膜、半导体背面用切割带集成膜、用于生产半导体器件的方法和半导体器件 Download PDFInfo
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Images
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
本发明涉及倒装芯片型半导体背面用膜、半导体背面用切割带集成膜、用于生产半导体器件的方法和倒装芯片型半导体器件。本发明涉及一种倒装芯片型半导体背面用膜,其在倒装芯片连接至被粘物上的半导体元件背面上形成,其中热固化前的倒装芯片型半导体背面用膜在其热固化时,在23℃-165℃范围内的体积收缩率为100ppm/℃-400ppm/℃。
Description
技术领域
本发明涉及倒装芯片型半导体背面用膜和半导体背面用切割带集成膜。所述倒装芯片型半导体背面用膜用于保护半导体元件如半导体芯片背面并增强其强度等目的。此外,本发明涉及采用半导体背面用切割带集成膜生产半导体器件的方法和倒装芯片型半导体器件。
背景技术
近来,日益要求半导体器件及其封装的薄型化和小型化。因此,作为半导体器件及其封装,已经广泛地利用其中通过倒装芯片接合将半导体元件例如半导体芯片安装(倒装芯片连接)于基板上的倒装芯片型半导体器件。在此类倒装芯片连接中,将半导体芯片以该半导体芯片的电路面与基板的电极形成面相对的形式固定至基板。在此类半导体器件等中,可以存在半导体芯片的背面用保护膜保护以防止半导体芯片损坏等的情况(参见,专利文献1至10)。
专利文献1:JP-A-2008-166451
专利文献2:JP-A-2008-006386
专利文献3:JP-A-2007-261035
专利文献4:JP-A-2007-250970
专利文献5:JP-A-2007-158026
专利文献6:JP-A-2004-221169
专利文献7:JP-A-2004-214288
专利文献8:JP-A-2004-142430
专利文献9:JP-A-2004-072108
专利文献10:JP-A-2004-063551
然而,采用保护膜的半导体芯片背面的保护需要将保护膜粘贴至在切割步骤中得到的半导体芯片背面的额外步骤。结果,工艺步骤数量增加,从而生产成本升高。另外,近来趋于薄型化的趋势会导致半导体芯片在拾取半导体芯片步骤中有时损坏。从而,直至拾取步骤(包含该步骤),需要增强半导体晶片和半导体芯片,以提高其机械强度。特别地,半导体芯片的薄型化有时会在半导体芯片上产生翘曲,从而需要抑制或防止翘曲的产生。
发明内容
考虑到前述问题进行本发明,其目的在于提供能够抑制或防止在倒装芯片连接至被粘物上的半导体元件上发生翘曲的倒装芯片型半导体背面用膜,和切割带集成晶片背面保护膜。
此外,本发明的另一目的在于提供一种能够在被粘物上倒装芯片连接半导体元件并抑制翘曲发生,从而能够改进生产率的生产半导体器件的方法。
为解决上述相关领域的问题,本发明人进行了广泛而深入的研究。结果,已经发现可通过控制倒装芯片型半导体背面用膜在热固化时的体积收缩率来降低倒装芯片连接至被粘物上的半导体上的翘曲发生,从而完成了本发明。
即,本发明提供一种在倒装芯片连接至被粘物上的半导体元件背面上形成的倒装芯片型半导体背面用膜,其中热固化前的倒装芯片型半导体背面用膜在其热固化时,在23℃-165℃范围内的体积收缩率为100ppm/℃-400ppm/℃。
在倒装芯片安装时,通常不使用包封全部半导体封装的成 型树脂(molding resin),仅采用称作底填料(underfill)的包封树脂来包封被粘物与半导体元件之间的凸块连接部。从而,裸露半导体元件的背面。例如,在当热固化包封树脂时,由于其固化和收缩而施加应力至半导体元件,并由于该应力,有时在半导体元件上会产生翘曲。特别地,在具有厚度300μm以下(进一步地,厚度200μm以下)的薄型半导体元件中,发生翘曲变得明显。
在半导体元件背面上形成膜时,本发明的倒装芯片型半导体背面用膜发挥了保护倒装芯片连接至被粘物上的半导体元件的功能。此外,本发明的倒装芯片型半导体背面用膜在包封树脂热固化时同时固化和收缩。此时,根据本发明的倒装芯片型半导体背面用膜,由于热固化前的倒装芯片型半导体背面用膜在热固化时,在23℃-165℃范围内的体积收缩率为100ppm/℃以上,因此相对于作用于半导体元件上的应力,所述膜可施加应力来抵消或减轻对半导体元件的应力。从而,可有效抑制或防止再流步骤前半导体元件的翘曲。另外,由于体积收缩率为400ppm/℃以下,所以可获得与包封材料收缩度(degree of contraction)相对应的适宜收缩度。此外,半导体元件的背面是指与其上形成电路的表面相对的表面。
在前述构造中,热固化后半导体背面用膜优选具有1GPa-5GPa的在23℃下的拉伸贮能模量。当热固化后的拉伸贮能模量为1GPa以上时,可更有效地抑制或防止翘曲。此外,当热固化后拉伸贮能模量为5GPa以下时,可抑制或防止向反面的翘曲产生。
在前述构造中,倒装芯片型半导体背面用膜优选具有10μm-40μm的厚度。通过控制厚度至10μm以上,可更有效地抑制或防止翘曲。另外,通过控制厚度至40μm以下,可抑制或防 止向反面翘曲的发生。此外,通过控制厚度为40μm以下,可薄化由倒装芯片安装于被粘物上的半导体元件组成的半导体器件。
本发明还提供一种半导体背面用切割带集成膜,其包含切割带和层压于切割带上的上述倒装芯片型半导体背面用膜,其中切割带包含基材和层压于基材上的压敏粘合剂层,所述倒装芯片型半导体背面用膜层压于切割带的压敏粘合剂层上。
根据具有上述构造的半导体背面用切割带集成膜,由于切割带和倒装芯片型半导体背面用膜以集成形式形成,所以还可提供半导体背面用切割带集成膜用于切割半导体晶片以制备半导体元件的切割步骤或随后的拾取步骤。即,当将切割带在切割步骤前粘贴至半导体晶片背面时,半导体背面用膜也可粘贴至其上,从而不需要单独粘贴半导体背面用膜的步骤(半导体背面用膜的粘贴步骤)。从而,可减少工艺步骤数。另外,由于半导体背面用膜保护了半导体晶片背面和通过切割形成的半导体元件的背面,从而可减少或防止切割步骤和随后的步骤(如拾取步骤)期间半导体元件的损坏。由此,可改进倒装芯片型半导体器件的生产率。
本发明进一步提供一种采用上述半导体背面用切割带集成膜生产半导体器件的方法,所述方法包括:将半导体晶片粘贴至半导体背面用切割带集成膜的倒装芯片型半导体背面用膜上,切割半导体晶片以形成半导体元件,将半导体元件与倒装芯片型半导体背面用膜一起从切割带的压敏粘合剂层剥离,将半导体元件连接至被粘物上。
在前述方法中,由于将半导体背面用切割带集成膜粘贴至半导体晶片的背面上,从而不需要单独粘贴半导体背面用膜的步骤(半导体背面用膜的粘贴步骤)。此外,由于在半导体晶片 的切割和通过切割形成的半导体元件的拾取期间,半导体背面用膜保护了半导体晶片和半导体元件的背面,从而可防止损坏等。由此,可以改进的生产率来生产倒装芯片型半导体器件。
前述倒装芯片连接步骤优选包括将包封树脂填充至被粘物与倒装芯片接合至被粘物上的半导体元件之间的间隙中,然后热固化包封树脂。
在当热固化包封树脂时,由于其固化和收缩,将应力施加至半导体元件,由于该应力,有时会在半导体元件上产生翘曲。特别地,在厚度300μm以下(进一步地,厚度200μm以下)的薄型半导体元件中,发生翘曲变得明显。然而,在前述工艺中,由于倒装芯片型半导体背面用膜在热固化前的倒装芯片型半导体背面用膜的热固化时,在23℃-165℃范围内,表现出100ppm/℃以上的体积收缩率,所以相对于作用于半导体元件上的应力,所述膜可施加应力来抵消或减轻对半导体元件的应力。从而,可有效抑制或防止再流步骤前半导体元件的翘曲。另外,由于体积收缩率为400ppm/℃以下,所以可获得与包封材料收缩度相对应的适宜收缩度。
本发明进一步提供一种倒装芯片型半导体器件,其通过上述方法生产。
根据本发明的倒装芯片型半导体背面用膜,由于所述膜在倒装芯片连接至被粘物上的半导体元件的背面上形成,从而所述膜发挥保护半导体元件的功能。另外,由于倒装芯片型半导体背面用膜热在热固化前的倒装芯片型半导体背面用膜的热固化时,在23℃-165℃范围内,表现出100ppm/℃-400ppm/℃的体积收缩率,从而可有效防止或抑制再流步骤前半导体元件的翘曲。
另外,根据本发明的半导体背面用切割带集成膜,切割带 和倒装芯片型半导体背面用膜以集成形式形成,从而,还可提供半导体背面用切割带集成膜用于切割半导体晶片以制备半导体元件的切割步骤或随后的拾取步骤。由此,不需要单独粘贴半导体背面用膜的步骤(半导体背面用膜的粘贴步骤)。此外,在后续切割步骤和拾取步骤中,由于半导体背面用膜粘贴至半导体晶片背面或通过切割形成的半导体元件背面,从而可有效保护半导体晶片和半导体元件,并可抑制或防止半导体元件的损坏。另外,倒装芯片连接半导体元件至被粘物上时,可防止半导体元件发生翘曲。
此外,根据本发明的生产半导体器件的方法,由于将半导体背面用切割带集成膜粘贴至半导体晶片背面,从而不需要单独粘贴半导体背面用膜的步骤。另外,由于在半导体晶片切割和通过切割形成的半导体元件的拾取期间,半导体背面用膜保护半导体晶片和半导体元件的背面,从而可防止损坏等。此外,在当半导体元件倒装芯片连接至被粘物上时,可防止半导体元件上发生翘曲。从而,可以改进的生产率来生产倒装芯片型半导体器件。
附图说明
图1为显示本发明的半导体背面用切割带集成膜的一个实施方案的截面示意图。
图2A-2D为显示采用本发明的半导体背面用切割带集成膜生产半导体器件的方法的一个实施方案的截面示意图。
附图标识说明
1 半导体背面用切割带集成膜
2 半导体背面用膜
3 切割带
31 基材
32 压敏粘合剂层
33 与半导体晶片粘贴部相对应的部分
4 半导体晶片
5 半导体芯片
51 在半导体芯片5的电路面侧上形成的凸块
6 被粘物
61 粘合至被粘物6的连接垫(connection pad)的连结用导电性材料
具体实施方式
参考图1描述本发明的实施方案,但本发明不限于这些实施方案。图1是显示根据本实施方案的半导体背面用切割带集成膜的一个实施方案的截面示意图。另外,在本说明书的图中,未给出对说明不必要的部分,和存在通过放大、缩小等显示的部分,以使得易于说明。
(半导体背面用切割带集成膜)
如图1所示,半导体背面用切割带集成膜1(以下有时也称作“切割带集成半导体背面保护膜”、“具有切割带的半导体背面用膜”或“具有切割带的半导体背面保护膜”)具有包括以下的构造:包含在基材31上形成的压敏粘合剂层32的切割带3,和在压敏粘合剂层32上形成的倒装芯片型半导体背面用膜2(以下有时称作“半导体背面用膜”或“半导体背面保护膜”)。同样如图1所示,本发明的半导体背面用切割带集成膜可设计为使得仅在与半导体晶片粘贴部相对应的部分33上形成半导体背面用膜2;然而,半导体背面用膜可在压敏粘合剂层32的全部表面上形成,或半导体背面用膜可在比与半导体晶片粘贴部相对应的部分33 大,但比压敏粘合剂层32的全部表面小的部分上形成。此外,半导体背面用膜2的表面(粘贴至晶片背面的表面)可采用隔离膜等保护,直至所述膜粘贴至晶片背面。
(倒装芯片型半导体背面用膜)
半导体背面用膜2具有膜形状。半导体背面用膜2在作为产品的半导体背面用切割带集成膜的实施方案中,通常处于未固化状态(包括半固化状态),并在将半导体背面用切割带集成膜粘贴至半导体晶片后热固化(细节描述于下文中)。
根据本实施方案的半导体背面用膜2具有如下性质:在热固化前的倒装芯片型半导体背面用膜的热固化时,在23℃-165℃范围内,体积收缩率为100ppm/℃-400ppm/℃。在体积收缩率为100ppm/℃以上的情况下,即使倒装芯片连接至被粘物上的半导体元件薄时(例如厚度为300μm以下,进一步地厚度为200μm以下),也可有效抑制或防止翘曲。在倒装芯片连接中,将半导体元件倒装芯片接合至被粘物上后,仅采用包封材料(如称作底填料的包封树脂)来包封被粘物与半导体元件之间的连接部分。进一步地,将包封树脂热固化,但由于此时包封材料的固化和收缩,使得应力作用于半导体元件,从而可能发生翘曲。然而,根据本实施方案的半导体背面用膜2与包封材料一起,在包封材料热固化时固化和收缩。此时,由于体积收缩率为100ppm/℃以上,从而变得可从半导体背面用膜2向半导体元件施加应力,因此可抵消或减轻源自包封材料固化和收缩的应力。结果,可抑制或防止半导体元件产生翘曲。另外,由于体积收缩率为400ppm/℃以下,所以可获得与包封材料收缩度相对应的适宜收缩度。上述半导体背面用膜2的体积收缩率优选为150ppm/℃-350ppm/℃,更优选200ppm/℃-350ppm/℃。
此处,尽管半导体背面用膜2可以是单层或层压多个层的层 压膜,但在半导体背面用膜为层压膜的情况下,作为层压膜整体的体积收缩率可以为100ppm/℃-400ppm/℃。前述半导体背面用膜的体积收缩率可通过适宜地设定热固性树脂的种类和含量等来控制。例如,其可通过线性热膨胀系数不同的热固性树脂的共混量来控制。此外,半导体背面用膜的体积收缩率可根据实施例中描述的方法测量。
半导体背面用膜至少由热固性树脂形成,但优选至少由热固性树脂和热塑性树脂形成。当膜至少由热固性树脂形成时,半导体背面用膜可有效地表现出作为粘合剂层的功能。
热塑性树脂的实例包括天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、聚酰胺树脂如6-尼龙和6,6-尼龙、苯氧基树脂、丙烯酸类树脂、饱和聚酯树脂如PET(聚对苯二甲酸乙二醇酯)或PBT(聚对苯二甲酸丁二醇酯)、聚酰胺酰亚胺树脂或氟化树脂。所述热塑性树脂可单独或两种以上组合采用。这些热塑性树脂中,特别优选包含少量离子杂质,具有高耐热性并能够保证半导体元件可靠性的丙烯酸类树脂。
对丙烯酸类树脂没有特别限制,其实例包括含有一种或两种以上具有30个以下碳原子,优选4-18个碳原子,更优选6-10个碳原子,特别是8或9个碳原子的直链或支化烷基的丙烯酸或甲基丙烯酸的酯作为组分的聚合物。即,在本发明中,丙烯酸类树脂具有还包括甲基丙烯酸类树脂的宽泛含义。烷基的实例包括甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基和十八烷基。
此外,对形成丙烯酸类树脂的其它单体(除烷基为具有30个以下碳原子的烷基的丙烯酸或甲基丙烯酸的烷基酯以外的单体)没有特别限制,其实例包括含羧基单体,如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸和巴豆酸;酸酐单体,如马来酸酐和衣康酸酐;含羟基单体,如(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、(甲基)丙烯酸4-羟丁酯、(甲基)丙烯酸6-羟己酯、(甲基)丙烯酸8-羟辛酯、(甲基)丙烯酸10-羟癸酯、(甲基)丙烯酸12-羟基月桂酯和(4-羟甲基环己基)-甲基丙烯酸酯;含磺酸基的单体,例如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸硫代丙酯和(甲基)丙烯酰氧基萘磺酸;和含磷酸单体,如2-羟乙基丙烯酰基磷酸酯。就此而言,(甲基)丙烯酸表示丙烯酸和/或甲基丙烯酸,(甲基)丙烯酸酯表示丙烯酸酯和/或甲基丙烯酸酯,(甲基)丙烯酰基表示丙烯酰基和/或甲基丙烯酰基,等等,其适用于整篇说明书。
此外,除环氧树脂和酚醛树脂以外,热固性树脂的实例还包括氨基树脂、不饱和聚酯树脂、聚氨酯树脂、硅酮树脂和热固性聚酰亚胺树脂。热固性树脂可单独或两种以上组合使用。作为热固性树脂,仅包含少量腐蚀半导体元件的离子杂质的环氧树脂是适宜的。此外,酚醛树脂适宜用作环氧树脂的固化剂。
对环氧树脂没有特别限制,可使用例如双官能环氧树脂或多官能环氧树脂,如双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、溴化双酚A型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂、联苯型环氧树脂、萘型环氧树脂、芴型环氧树脂、苯酚酚醛清漆型环氧树脂、邻甲酚酚醛清漆型环氧树脂、三羟基苯甲烷型环氧树脂和四苯酚乙烷型环氧树脂或环氧树脂如乙内酰脲型环氧树脂、三缩水甘油基异氰脲酸酯型 环氧树脂或缩水甘油基胺型环氧树脂。
作为环氧树脂,在上述列举的那些中,优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟基苯甲烷型环氧树脂和四苯酚乙烷型环氧树脂。这是因为这些环氧树脂具有与作为固化剂的酚醛树脂的高反应性,并且耐热性等优异。
此外,上述酚醛树脂起到环氧树脂固化剂的作用,其实例包括酚醛清漆型酚醛树脂,例如苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂和壬基苯酚酚醛清漆树脂;甲阶型酚醛树脂;和聚氧苯乙烯如聚对氧苯乙烯。所述酚醛树脂可单独或两种以上组合使用。这些酚醛树脂中,特别优选苯酚酚醛清漆树脂和苯酚芳烷基树脂。这是因为能够改进半导体器件的连接可靠性。
环氧树脂与酚醛树脂的混合比优选为使得例如酚醛树脂中的羟基相对于每当量环氧树脂组分中的环氧基为0.5当量-2.0当量。更优选0.8当量-1.2当量。即,当混合比在该范围外时,固化反应不能充分进行,环氧树脂固化产品的特性趋于劣化。
基于半导体背面用膜的全部树脂组分,热固性树脂的含量优选为5重量%-90重量%,更优选10重量%-85重量%,进一步优选15重量%-80重量%。通过控制含量为5重量%以上,可容易地使得热固化收缩度为2体积%以上。此外,在包封树脂热固化时,可充分热固化半导体背面用膜,从而可牢固粘贴并固定至半导体元件的背面,以不表现出剥离的生产倒装芯片型半导体器件。另一方面,通过控制含量为90重量%以下,可抑制封装(PKG:倒装芯片型半导体器件)的翘曲。
对环氧树脂和酚醛树脂用热固化促进催化剂没有特别限制,可由已知的热固化促进催化剂适宜地选择并使用。所述热固化促进催化剂可单独使用,或两种以上组合使用。作为热固 化促进催化剂,可使用例如胺类固化促进催化剂、磷类固化促进催化剂、咪唑类固化促进催化剂、硼类固化促进催化剂或磷-硼类固化促进催化剂。
半导体背面用膜由包含环氧树脂和酚醛树脂的树脂组合物,或包含环氧树脂、酚醛树脂和丙烯酸类树脂的树脂组合物形成是适宜的。由于这些树脂中离子杂质较少且耐热性高,因此能够保证半导体元件的可靠性。
半导体背面用膜2对半导体晶片背面(非电路形成面)具有粘合性(紧密粘合性)是重要的。半导体背面用膜2可例如由包含环氧树脂作为热固性树脂的树脂组合物形成。基于预先将半导体背面用膜2交联至一定程度的目的,优选在制备时添加能够与聚合物的分子链末端官能团等反应的多官能化合物作为交联剂。由此,可增强高温下的粘合性和改进耐热性。
半导体背面用膜对半导体晶片的粘合力(23℃,180°剥离角,300mm/min剥离速率)优选落入0.5N/20mm-15N/20mm,更优选0.7N/20mm-10N/20mm的范围内。通过控制粘合力为0.5N/20mm以上,可使所述膜粘贴至具有优异粘合性的半导体晶片和半导体元件上,并可防止发生浮起等。此外,在半导体晶片切割时,还可防止发生芯片飞散。另一方面,通过控制粘合力为15N/20mm以下,可容易地使膜从切割带上剥离。
对交联剂没有特别限制,可使用已知的交联剂。具体地,例如,不仅可提及异氰酸酯类交联剂、环氧类交联剂、三聚氰胺类交联剂和过氧化物类交联剂,而且还可提及脲类交联剂、金属醇盐类交联剂、金属螯合物类交联剂、金属盐类交联剂、碳二亚胺类交联剂、噁唑啉类交联剂、氮丙啶类交联剂和胺类交联剂等。作为交联剂,异氰酸酯类交联剂或环氧类交联剂是适宜的。所述交联剂可单独或以两种以上组合使用。
异氰酸酯类交联剂的实例包括低级脂肪族聚异氰酸酯,如1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯和1,6-六亚甲基二异氰酸酯;脂环族聚异氰酸酯,例如亚环戊基二异氰酸酯、亚环己基二异氰酸酯、异佛尔酮二异氰酸酯、氢化亚甲苯基二异氰酸酯和氢化亚二甲苯基二异氰酸酯;和芳香族聚异氰酸酯,如2,4-亚甲苯基二异氰酸酯、2,6-亚甲苯基二异氰酸酯、4,4’-二苯基甲烷二异氰酸酯和亚二甲苯基二异氰酸酯。另外,还可使用三羟甲基丙烷/亚甲苯基二异氰酸酯三聚体加合物[商品名“COLONATE L”,由Nippon Polyurethane Industry Co.,Ltd.制造]和三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加合物[商品名“COLONATE HL”,由Nippon Polyurethane Industry Co.,Ltd.制造]等。此外,环氧类交联剂的实例包括N,N,N’,N’-四缩水甘油基间亚二甲苯基二胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、脱水山梨糖醇多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三缩水甘油基-三(2-羟乙基)异氰脲酸酯、间苯二酚二缩水甘油醚和双酚-S-二缩水甘油醚以及分子中具有两个或多个环氧基的环氧类树脂。
对交联剂的使用量没有特别限制,可根据交联度适宜地选择。具体地,优选基于100重量份聚合物组分(特别地,在分子链末端具有官能团的聚合物),交联剂的使用量通常为7重量份以下(例如0.05-7重量份)。当基于100重量份聚合物组分,交联剂的量大于7重量份时,粘合力下降,从而该情况不是优选的。 基于改进内聚力的观点,基于100重量份聚合物组分,交联剂的量优选0.05重量份以上。
在本发明中,代替使用交联剂或与交联剂一起使用,还可通过用电子束或紫外光等照射实施交联处理。
半导体背面用膜优选是着色的。从而,可表现出优异的激光标识性和优异的外观性,且变得可以使半导体器件具有增值的外观性。如上所述,由于半导体背面用彩色膜具有优异的标识性,可利用各种标识法如印刷法和激光标识法,通过半导体背面用膜实施标识,以赋予各种信息如文字信息和图形信息至半导体元件或使用半导体元件的半导体器件的非电路侧上的面。特别地,通过控制着色的颜色,变得可以观察通过优良可见度地标识而赋予的信息(例如文字信息和图形信息)。另外,当着色半导体背面用膜时,可容易地彼此区分切割带和半导体背面用膜,从而可增强加工性等。此外,例如作为半导体器件,可以通过使用不同的颜色将其产物分类。在着色半导体背面用膜的情况下(所述膜既非无色也非透明的情况),对通过着色显示的颜色没有特别限制,但优选例如暗色如黑色、蓝色或红色,黑色是特别适宜的。
在本实施方案中,暗色主要是指在L*a*b*颜色空间中定义的L*为60以下(0-60),优选50以下(0-50),更优选40以下(0-40)的暗色。
此外,黑色主要是指在L*a*b*颜色空间中定义的L*为35以下(0-35),优选30以下(0-30),更优选25以下(0-25)的黑色系颜色。就此而言,在黑色中,在L*a*b*颜色空间中定义的各a*和b*可根据L*值适宜地选择。例如a*和b*均在优选-10至10,更优选-5至5,进一步优选-3至3(特别优选0或约0)的范围内。
在本实施方案中,在L*a*b*颜色空间中定义的L*、a*和b* 可通过采用色差仪(商品名“CR-200”,由Minolta Ltd制造;色差仪)测量来确定。L*a*b*颜色空间为由Commission Internationale de l’Eclairage(CIE)在1976年建议的颜色空间,是指称作CIE 1976(L*a*b*)颜色空间的颜色空间。此外,L*a*b*颜色空间定义于日本工业标准(Japanese Industrial Standards)JIS Z8729中。
在半导体背面用膜着色时,根据目标颜色,可使用着色剂(着色试剂)。作为此类着色剂,可适当使用各种暗色着色剂如黑色着色剂、蓝色着色剂和红色着色剂,黑色着色剂是更适宜的。着色剂可为任意颜料和染料。着色剂可单独使用或以两种以上的组合使用。在这点上,作为染料,可以使用任何形式的染料如酸性染料、反应性染料、直接染料、分散染料和阳离子染料。此外,同样关于颜料,其形式不特别限制,可在已知颜料中适当选择和使用。
特别地,当使用染料作为着色剂时,染料变为处于通过溶解于半导体背面用膜中而均匀或几乎均匀分散的状态,从而可容易地生产具有均匀或几乎均匀的颜色浓度的半导体背面用膜(结果,半导体背面用切割带集成膜)。因此,当使用染料作为着色剂时,在半导体背面用切割带集成膜中,半导体背面用膜可具有均匀或几乎均匀的颜色浓度,并可增强标识性和外观性。
对黑色着色剂没有特别限制,可例如适宜地选自无机黑色颜料和黑色染料。此外,黑色着色剂可以是其中混合了青色着色剂(蓝-绿着色剂)、品红色着色剂(红-紫着色剂)和黄色着色剂的着色剂混合物。所述黑色着色剂可单独或两种以上组合使用。当然,黑色着色剂可与除黑色以外其它颜色的着色剂组合使用。
黑色着色剂的具体实例包括炭黑(如炉黑、槽黑、乙炔黑、热裂炭黑或灯黑)、石墨、氧化铜、二氧化锰、偶氮型颜料(如 偶氮甲碱偶氮黑)、苯胺黑、苝黑、钛黑、花青黑、活性炭、铁素体(如非磁性铁素体或磁性铁素体)、磁铁矿、氧化铬、氧化铁、二硫化钼、铬络合物、复合氧化物型黑色颜料和蒽醌型有机黑色颜料。
在本发明中,作为黑色着色剂,还可使用黑色染料,如C.I溶剂黑3、7、22、27、29、34、43、70,C.I.直接黑17、19、22、32、38、51、71,C.I.酸性黑1、2、24、26、31、48、52、107、109、110、119、154和C.I.分散黑1、3、10、24;和黑色颜料,如C.I.颜料黑1、7等。
作为这类黑色着色剂,例如可商购获得商品名“Oil Black BY”、商品名“Oil Black BS”、商品名“Oil Black HBB”、商品名“Oil Black 803”、商品名“Oil Black 860”、商品名“Oil Black 5970”、商品名“Oil Black 5906”和商品名“Oil Black 5905”等(由Orient Chemical Industries Co.,Ltd.制造)。
除黑色着色剂以外的着色剂实例包括青色着色剂、品红色着色剂和黄色着色剂。青色着色剂的实例包括青色染料,如C.I.溶剂蓝25、36、60、70、93、95;C.I.酸性蓝6和45;青色颜料,如C.I.颜料蓝1、2、3、15、15:1、15:2、15:3、15:4、15:5、15:6、16、17、17:1、18、22、25、56、60、63、65、66;C.I.瓮蓝4、60;和C.I.颜料绿7。
此外,在品红色着色剂中,品红色染料的实例包括C.I.溶剂红1、3、8、23、24、25、27、30、49、52、58、63、81、82、83、84、100、109、111、121、122;C.I.分散红9;C.I.溶剂紫8、13、14、21、27;C.I.分散紫1;C.I.碱性红1、2、9、12、13、14、15、17、18、22、23、24、27、29、32、34、35、36、37、38、39、40;C.I.碱性紫1、3、7、10、14、15、21、25、26、27和28。
在品红色着色剂中,品红色颜料的实例包括C.I.颜料红1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、21、22、23、30、31、32、37、38、39、40、41、42、48:1、48:2、48:3、48:4、49、49:1、50、51、52、52:2、53:1、54、55、56、57:1、58、60、60:1、63、63:1、63:2、64、64:1、67、68、81、83、87、88、89、90、92、101、104、105、106、108、112、114、122、123、139、144、146、147、149、150、151、163、166、168、170、171、172、175、176、177、178、179、184、185、187、190、193、202、206、207、209、219、222、224、238、245;C.I.颜料紫3、9、19、23、31、32、33、36、38、43、50;C.I.瓮红1、2、10、13、15、23、29和35。
此外,黄色着色剂的实例包括黄色染料,如C.I.溶剂黄19、44、77、79、81、82、93、98、103、104、112和162;黄色颜料,如C.I.颜料橙31、43;C.I.颜料黄1、2、3、4、5、6、7、10、11、12、13、14、15、16、17、23、24、34、35、37、42、53、55、65、73、74、75、81、83、93、94、95、97、98、100、101、104、108、109、110、113、114、116、117、120、128、129、133、138、139、147、150、151、153、154、155、156、167、172、173、180、185、195;C.I.瓮黄1、3和20。
各种着色剂如青色着色剂、品红色着色剂和黄色着色剂可分别单独或两种以上组合使用。就此而言,在使用两种以上着色剂如青色着色剂、品红色着色剂和黄色着色剂的情况下,对这些着色剂的混合比(或共混比)没有特别限制,可根据各着色剂的种类和目标颜色等适宜地选择。
在着色半导体背面用膜2的情况下,对着色形式没有特别限制。半导体背面用膜可以是例如添加有着色剂的单层膜状制品。此外,该膜可为至少层压至少由热固性树脂组分形成的树脂层 与着色剂层的层压膜。就此而言,在半导体背面用膜2为树脂层和着色剂层的层压膜的情况下,以层压形式的半导体背面用膜2优选具有树脂层/着色剂层/树脂层的层压形式。在此情况下,在着色剂层两侧的两个树脂层可以是具有相同组成的树脂层,或可以是具有不同组成的树脂层。
向半导体背面用膜2内,根据需要可适宜地共混其它添加剂。其它添加剂的实例除了填料、阻燃剂、硅烷偶联剂和离子捕集剂之外,还包括增量剂、防老剂、抗氧化剂和表面活性剂。
填料可以是任意的无机填料和有机填料,但无机填料是适宜的。通过共混填料如无机填料,可实现赋予半导体背面用膜导电性、改进导热性和控制弹性模量等。就此而言,半导体背面用膜2可以是导电性或非导电性的。无机填料的实例包括由以下组成的各种无机粉末:二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、陶瓷如碳化硅和氮化硅、金属或合金如铝、铜、银、金、镍、铬、铅、锡、锌、钯和焊料以及碳等。填料可单独或两种以上组合使用。特别地,填料适宜地为二氧化硅,更适宜地为熔融二氧化硅。无机填料的平均粒径优选在0.1μm-80μm范围内。无机填料的平均粒径可通过激光衍射型粒度分布测量设备测量。
填料(特别是无机填料)的共混量基于100重量份有机树脂组分,优选为80重量份以下(0重量份-80重量份),更优选0重量份-70重量份。
阻燃剂的实例包括三氧化锑、五氧化锑和溴化环氧树脂。阻燃剂可单独或两种以上组合使用。硅烷偶联剂的实例包括β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧丙基三甲氧基硅烷和γ-环氧丙氧丙基甲基二乙氧基硅烷。硅烷偶联剂可单独或两种以上组合使用。离子捕捉剂的实例包括水滑石和氢氧 化铋。离子捕捉剂可单独或两种以上组合使用。
半导体背面用膜2例如可通过利用包括以下步骤的常规使用方法形成:将热固性树脂例如环氧树脂和如果需要的热塑性树脂如丙烯酸类树脂以及任选的溶剂和其它添加剂混合从而制备树脂组合物,接着将其成形为膜状层。具体地,作为半导体背面用膜的膜状层(粘合剂层)例如,能够通过以下方法形成:包括将树脂组合物施涂至切割带的压敏粘合剂层32上的方法;或者包括将树脂组合物施涂至适当的隔离膜(例如,剥离纸)上以形成树脂层(或粘合剂层),然后将其转移(转换)至压敏粘合剂层32上的方法;等等。在这点上,树脂组合物可为溶液或分散液。
此外,在半导体背面用膜2由包含热固性树脂如环氧树脂的树脂组合物形成的情况下,在将半导体背面用膜应用至半导体晶片之前的阶段,该膜处于热固性树脂组分未固化或部分固化的状态下。在此情况下,将其应用至半导体晶片后(具体地,通常在当倒装芯片接合步骤中固化包封材料时),将半导体背面用膜中的热固性树脂完全或几乎完全固化。
如上所述,由于即使当半导体背面用膜包含热固性树脂时,该膜也处于热固性树脂组分未固化或部分固化的状态下,从而对半导体背面用膜的凝胶分数没有特别限制,但例如适宜地选自50重量%以下(0-50重量%),优选30重量%以下(0-30重量%)和特别优选10重量%以下(0-10重量%)的范围内。半导体背面用膜的凝胶分数可通过以下测量方法测量。
<凝胶分数测量法>
从半导体背面用膜2取样约0.1g样品,并精确称重(样品重量),将样品包裹于网型片中后,将其在室温下浸入约50mL甲苯中1周。此后,从甲苯中取出溶剂不溶物(网型片内的内含物), 并在130℃下干燥约2小时,称重干燥后的溶剂不溶物(浸渍和干燥后的重量),然后根据以下表达式(a)计算凝胶分数(重量%)。
凝胶分数(重量%)=[(浸渍和干燥后的重量)/(样品重量)]×100 (a)
半导体背面用膜的凝胶分数能够通过树脂组分的种类和含量、交联剂的种类和含量以及除此以外的加热温度和加热时间等来控制。
在本发明中,在半导体背面用膜为由包含热固性树脂如环氧树脂的树脂组合物形成的膜状制品的情况下,可有效地表现出对半导体晶片的紧密粘合性。
此外,由于在半导体晶片切割步骤中使用切割水,半导体背面用膜吸收水分,从而在一些情况下具有常规状态以上的水分含量。当在仍维持此类高水分含量下进行倒装芯片接合时,水蒸气残留在半导体背面用膜2和半导体晶片或其加工体(半导体)之间的粘合界面处,并且在一些情况下产生浮起。因此,通过构成半导体背面用膜为将具有高透湿性的芯材设置于其各表面上的构造,水蒸气扩散,由此变得可以避免此类问题。基于此观点,可采用其中在芯材的一个或两个表面上形成半导体背面用膜2的多层结构作为半导体背面用膜。芯材的实例包括膜(如聚酰亚胺膜、聚酯膜、聚对苯二甲酸乙二醇酯膜、聚萘酸乙二醇酯膜、聚碳酸酯膜等)、采用玻璃纤维或塑料无纺纤维增强的树脂基板、硅基板和玻璃基板。
对半导体背面用膜2的厚度(在层压膜的情况下为总厚度)没有特别限制,但优选10μm-40μm,更优选20μm-30μm。通过控制半导体背面用膜2的厚度为10μm以上,可有效抑制或防止翘曲。另外,通过控制厚度为40μm以下,可进一步抑制或防止向反面翘曲的发生。此外,通过控制厚度为40μm以下,变得可 以薄化由倒装芯片安装至被粘物上的半导体元件组成的半导体器件。
未固化状态下,半导体背面用膜2在23℃下的拉伸贮能弹性模量优选为1GPa以上(例如1GPa-50GPa),更优选2GPa以上,特别地,3GPa以上是适宜的。当拉伸贮能弹性模量为1GPa以上时,在将半导体芯片与半导体背面用膜2一起从切割带的压敏粘合剂层32剥离之后将半导体背面用膜2放置在支承体上并进行输送等时,能够有效地抑制或防止半导体背面用膜粘贴至支承体。就此而言,支承体例如为载带中的顶带和底带等。
此处,半导体背面用膜2可为单层或层压多个层的层压膜。在层压膜的情况下,作为处于未固化状态下的整体层压膜,拉伸贮能弹性模量充分地为1GPa以上(例如1GPa-50GPa)。此外,未固化状态下的半导体背面用膜的拉伸贮能弹性模量(23℃)可通过适宜地设定树脂组分(热塑性树脂和/或热固性树脂)的种类和含量,或填料如二氧化硅填料的种类和含量来控制。在半导体背面用膜2为层压多个层的层压膜情况下(在半导体背面用膜具有层压层形式的情况下),作为层压层形式,例如可示例由晶片粘合剂层和激光标识层构成的层压形式。此外,在晶片粘合剂层与激光标识层之间,可设置其它层(中间层、遮光层、补强层、着色层、基材层、电磁波屏蔽层、导热层、压敏粘合剂层等)。就此而言,晶片粘合剂层为对晶片表现出优异的紧密粘合性(粘合性)并与晶片背面接触的层。另一方面,激光标识层为表现出优异的激光标识性的层,和在半导体芯片背面上激光标识时使用的层。
拉伸贮能弹性模量通过如下测定:制备不层压至切割带3上的处于未固化状态下的半导体背面用膜2,并使用由Rheometrics Co.,Ltd.制造的动态粘弹性测量设备“Solid Analyzer RS A2”,于规定温度(23℃)下,在氮气气氛中,在样品宽度10mm、样品长度22.5mm、样品厚度0.2mm、频率1Hz和升温速率10℃/分钟的条件下,以拉伸模式测量弹性模量,并将该测量的弹性模量作为所得拉伸贮能弹性模量的值。
热固化后半导体背面用膜2优选具有1GPa-5GPa的在23℃下的拉伸贮能模量,更优选1.5GPa-4.5GPa,进一步优选2.0GPa-4.0GPa。当热固化后的拉伸贮能模量为1GPa以上时,可有效抑制或防止翘曲。此外,当热固化后的拉伸贮能模量为5GPa以下时,可进一步抑制或防止向反面翘曲的发生。
此处,尽管半导体背面用膜2可以为单层,或可为层压多个层的层压膜,但在层压膜的情况下,作为层压膜整体热固化后的在23℃下的拉伸贮能模量可落入1GPa-5GPa范围内。此外,前述热固化后的半导体背面用膜在23℃下的拉伸贮能模量可通过适宜地设定树脂组分(热塑性树脂和/或热固性树脂)的种类和含量和填料如二氧化硅填料的种类和含量等来控制。
此外,热固化后的在23℃下的拉伸贮能模量通过如下测定:制备不层压至切割带3上的半导体背面用热固化膜2,并使用由Rheometrics Co.,Ltd.制造的动态粘弹性测量设备“Solid Analyzer RS A2”,于规定温度(23℃)下,在氮气气氛中,在样品宽度10mm、样品长度22.5mm、样品厚度0.2mm、频率1Hz和升温速率10℃/分钟的条件下,以拉伸模式测量弹性模量,并将其作为得到的拉伸贮能模量值。
优选地,在其至少一个表面上采用隔离膜(剥离衬垫)保护半导体背面用膜2(图中未显示)。例如,在半导体背面用切割带集成膜1中,可以在半导体背面用膜的至少一个表面上设置隔离膜。另一方面,在未集成有切割带的半导体背面用膜中,可在半导体背面用膜的一个或两个表面上设置隔离膜。隔离膜具有 作为保护半导体背面保护膜的保护材料的功能直至半导体背面保护膜实际使用。此外,半导体背面用切割带集成膜1中,所述隔离体可进一步用作将半导体背面用膜2转移至切割带基材的压敏粘合剂层32上时的支承基材。当将半导体晶片粘贴至半导体背面用膜上时,剥离隔离膜。作为隔离膜,还可使用聚乙烯或聚丙烯膜以及表面涂覆有脱模剂如氟类脱模剂或丙烯酸长链烷基酯类脱模剂的塑料膜(如聚对苯二甲酸乙二醇酯)或纸等。所述隔离膜可采用常规已知方法形成。此外,对隔离膜的厚度等没有特别限制。
在半导体背面用膜2未层压有切割带3的情况下,可将半导体背面用膜2与其两侧上具有剥离层的一个隔离膜一起卷绕至辊中,在所述辊中采用在其两侧上具有剥离层的隔离膜保护膜2;或可将膜2在其至少一个表面上采用具有剥离层的隔离膜保护。
此外,在半导体背面用膜2中的对于可见光的透光率(可见光透过率,波长:400nm-800nm)没有特别限定,但例如优选在20%以下(0-20%),更优选10%以下(0-10%),特别优选5%以下(0-5%)范围内。当半导体背面用膜2具有可见光透过率为大于20%时,存在光的透射可能不利地影响半导体元件的担忧。可见光透过率(%)能够通过半导体背面用膜2的树脂组分的种类和含量、着色剂(例如颜料或染料)的种类和含量以及无机填料的含量等来控制。
半导体背面用膜2的可见光透过率(%)可如下测定。即,制备本身具有厚度(平均厚度)为20μm的半导体背面用膜2。然后,将半导体背面用膜2用波长为400至800nm的可见光[设备:由Shimadzu Corporation制造的可见光产生设备[商品名″ABSORPTION SPECTRO PHOTOMETER″]在规定强度下照 射,并测量透过的可见光的强度。此外,可基于可见光透过半导体背面用膜2前后的强度变化来确定可见光透过率(%)。就此而言,也可以从厚度不是20μm的半导体背面用膜2的可见光透过率(%;波长:400至800nm)的值推导出厚度为20μm的半导体背面用膜2的可见光透过率(%;波长:400至800nm)。在本发明中,在厚度为20μm的半导体背面用膜2的情况下测定可见光透过率(%),但根据本发明的半导体背面用膜不限于厚度为20μm的半导体背面用膜。
此外,作为半导体背面用膜2,更优选具有较低吸湿度的半导体背面用膜。具体地,吸湿度优选1重量%以下,更优选0.8重量%以下。通过调整吸湿度至1重量%以下,可增强激光标识性。此外,例如,在再流步骤中,可抑制或防止半导体背面用膜2与半导体元件之间空隙的产生。吸湿度为由使半导体背面用膜2在温度85℃和湿度85%RH的气氛下静置168小时前后的重量变化计算的值。在半导体背面用膜2由包含热固性树脂的树脂组合物形成的情况下,吸湿度是指当使热固化后的膜在温度85℃和湿度85%RH的气氛下静置168小时时获得的值。此外,吸湿度例如可通过改变无机填料的添加量来调整。
此外,作为半导体背面用膜2,更优选具有较小比例的挥发性物质的半导体背面用膜2。具体地,热处理后半导体背面用膜2的重量减少的比例(重量减少率)优选为1重量%以下,更优选0.8重量%以下。热处理的条件例如为,加热温度为250℃,加热时间为1小时。通过将重量减少率调整至1重量%以下,能够提高激光标识性。此外,例如,在再流步骤中能够抑制或防止倒装芯片型半导体器件中裂纹的产生。重量减少率可例如通过添加在无铅焊料再流时能够减少裂纹产生的无机物质来调整。在半导体背面用膜2由包含热固性树脂组分的树脂组合物形成 的情况下,重量减少率为当将热固化后的半导体背面用膜在温度250℃和加热时间为1小时的条件下加热时获得的值。
(切割带)
切割带3包括基材31和形成于基材31上的压敏粘合剂层32。因而,切割带3充分具有层压基材31和压敏粘合剂层32的构造。基材(支承基材)可用作压敏粘合剂层等用支承材料。基材31优选具有放射线透过性(radiation ray-transmitting property)。作为基材31,例如,可使用合适的薄型材料,例如纸类基材如纸;纤维类基材如织物、无纺布、毡和网;金属类基材如金属箔和金属板;塑料基材如塑料膜和片;橡胶类基材如橡胶片;发泡体(foamed body)如发泡片;及其层压体[特别地,塑料类材料与其它基材的层压体,塑料膜(或片)彼此的层压体等]。在本发明中,作为基材,可适宜使用塑料基材如塑料膜和片。此类塑料材料的原料实例包括烯烃类树脂如聚乙烯(PE)、聚丙烯(PP)和乙烯-丙烯共聚物;使用乙烯作为单体组分的共聚物,如乙烯-乙酸乙烯酯共聚物(EVA)、离聚物树脂、乙烯-(甲基)丙烯酸共聚物和乙烯-(甲基)丙烯酸酯(无规,交替)共聚物;聚酯如聚对苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)和聚对苯二甲酸丁二醇酯(PBT);丙烯酸类树脂;聚氯乙烯(PVC);聚氨酯;聚碳酸酯;聚苯硫醚(PPS);酰胺类树脂如聚酰胺(尼龙)和全芳族聚酰胺(whole aromatic polyamides)(芳族聚酰胺);聚醚醚酮(PEEK);聚酰亚胺;聚醚酰亚胺;聚偏氯乙烯;ABS(丙烯腈-丁二烯-苯乙烯共聚物);纤维素类树脂;硅酮树脂;和氟化树脂。
另外,基材31的材料包括聚合物如前述树脂的交联材料。塑料膜可在不拉伸的情况下使用或者需要时可在进行单轴或双轴拉伸处理后使用。根据通过拉伸处理等赋予热收缩性的树脂 片,在切割后通过基材31的热收缩减小压敏粘合剂层32和半导体背面用膜2之间的粘合面积,从而可便于半导体芯片的回收。
为了提高与邻接层的紧密粘合性和保持性等,可在基材31的表面上实施常规使用的表面处理,例如化学或物理处理如铬酸盐处理、臭氧暴露、火焰暴露、暴露于高压电击或电离辐射处理,或用底漆剂(undercoating agent)例如稍后提及的压敏粘合剂物质的涂布处理。
作为基材31,可适当选择和使用相同种类或不同种类的材料,需要时,可将几种材料共混并使用。此外,为了赋予基材31以抗静电能力,可在基材31上形成由金属、合金或其氧化物组成的厚度为约30至500埃的导电性物质的气相沉积层。基材31可为单层或其两层以上的多层。
基材31的厚度(在层压层的情况下为总厚度)没有特别限定,可依赖于强度、屈挠性及预期的使用目的等适当选择。例如,厚度通常为1000μm以下(例如1μm至1000μm),优选10μm至500μm,进一步优选20μm至300μm,特别优选约30μm至200μm,但不限于此。
此外,在不损害本发明的优点等的范围内,基材31可包含多种添加剂(着色剂、填料、增塑剂、抗老化剂、抗氧化剂、表面活性剂、阻燃剂等)。
压敏粘合剂层32由压敏粘合剂形成,并具有压敏粘合性。没有特别限定,压敏粘合剂可适宜地选自已知压敏粘合剂。具体地,作为压敏粘合剂,例如,具有上述特性的那些可适宜地选自已知的压敏粘合剂,如丙烯酸类压敏粘合剂、橡胶类压敏粘合剂、乙烯基烷基醚类压敏粘合剂、硅酮类压敏粘合剂、聚酯类压敏粘合剂、聚酰胺类压敏粘合剂、聚氨酯类压敏粘合剂、氟类压敏粘合剂、苯乙烯-二烯嵌段共聚物类压敏粘合剂,和通 过向上述压敏粘合剂中引入熔点不大于200℃的热熔融性树脂制备的蠕变特性改进的压敏粘合剂(例如参见JP-A 56-61468、JP-A-61-174857、JP-A-63-17981、JP-A-56-13040,其在此引入作为参考),并用于此处。作为压敏粘合剂,也可使用照射固化型压敏粘合剂(或能量射线固化型压敏粘合剂)或热膨胀性压敏粘合剂。本文中,可单独或组合使用一种以上这类压敏粘合剂。
作为压敏粘合剂,本文优选使用丙烯酸类压敏粘合剂和橡胶类压敏粘合剂,更优选丙烯酸类压敏粘合剂。丙烯酸类压敏粘合剂的实例包括含有一种以上(甲基)丙烯酸烷基酯作为单体组分的丙烯酸类聚合物(均聚物或共聚物)作为基础聚合物的丙烯酸类压敏粘合剂。
丙烯酸类压敏粘合剂中的(甲基)丙烯酸烷基酯包括例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸仲丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸异壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸异癸酯、(甲基)丙烯酸十一烷酯、(甲基)丙烯酸十二烷酯、(甲基)丙烯酸十三烷酯、(甲基)丙烯酸十四烷酯、(甲基)丙烯酸十五烷酯、(甲基)丙烯酸十六烷酯、(甲基)丙烯酸十七烷酯、(甲基)丙烯酸十八烷酯、(甲基)丙烯酸十九烷酯、(甲基)丙烯酸二十烷酯等。作为(甲基)丙烯酸烷基酯,优选具有4-18个碳原子的烷基的那些。在(甲基)丙烯酸烷基酯中,烷基可以是线形或支化的。
基于改进其内聚力、耐热性和交联性的目的,若期望,丙烯酸类聚合物可包含对应于可与上述(甲基)丙烯酸烷基酯共聚的任意其它单体组分(可共聚合单体组分)对应的单元。可共聚 合单体组分包括例如含羧基单体,如(甲基)丙烯酸(丙烯酸、甲基丙烯酸)、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸;含酸酐基单体,如马来酸酐、衣康酸酐;含羟基单体,如(甲基)丙烯酸羟乙酯、(甲基)丙烯酸羟丙酯、(甲基)丙烯酸羟丁酯、(甲基)丙烯酸羟己酯、(甲基)丙烯酸羟辛酯、(甲基)丙烯酸羟癸酯、(甲基)丙烯酸羟基月桂酯、(甲基)丙烯酸(4-羟甲基环己基)甲酯;含磺酸基的单体,如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸;含磷酸基单体,如2-羟乙基丙烯酰基磷酸酯;(N-取代的)酰胺单体,如(甲基)丙烯酰胺、N,N-二甲基(甲基)丙烯酰胺、N-丁基(甲基)丙烯酰胺、N-羟甲基(甲基)丙烯酰胺、N-羟甲基丙烷(甲基)丙烯酰胺;(甲基)丙烯酸氨烷基酯单体,如(甲基)丙烯酸氨乙酯、(甲基)丙烯酸N,N-二甲基氨乙酯、(甲基)丙烯酸叔丁基氨乙酯;(甲基)丙烯酸烷氧基烷基酯单体,如(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯;氰基丙烯酸酯类单体,如丙烯腈、甲基丙烯腈;含环氧基的丙烯酸类单体,如(甲基)丙烯酸缩水甘油酯;苯乙烯单体,如苯乙烯、α-甲基苯乙烯;乙烯基酯单体,如醋酸乙烯酯、丙酸乙烯酯;烯烃单体,如异戊二烯、丁二烯、异丁烯;乙烯基醚单体,如乙烯基醚;含氮单体,如N-乙烯基吡咯烷酮、甲基乙烯基吡咯烷酮、乙烯基吡啶、乙烯基哌啶酮、乙烯基嘧啶、乙烯基哌嗪、乙烯基吡嗪、乙烯基吡咯、乙烯基咪唑、乙烯基噁唑、乙烯基吗啉、N-乙烯基碳酰胺、N-乙烯基己内酰胺;马来酰亚胺单体,如N-环己基马来酰亚胺、N-异丙基马来酰亚胺、N-月桂基马来酰亚胺、N-苯基马来酰亚胺;衣康酰亚胺单体,如N-甲基衣康酰亚胺、N-乙基衣康酰亚胺、N-丁基衣康酰亚胺、N-辛基衣康酰亚胺、N-2-乙基己基衣康酰亚 胺、N-环己基衣康酰亚胺、N-月桂基衣康酰亚胺;琥珀酰亚胺单体,如N-(甲基)丙烯酰氧基亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-6-氧杂六亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-8-氧杂八亚辛基琥珀酰亚胺;二醇类丙烯酸酯单体,如聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯、甲氧基乙二醇(甲基)丙烯酸酯、甲氧基丙二醇(甲基)丙烯酸酯;具有杂环、卤素原子或硅原子等的丙烯酸酯类单体,例如四氢糠基(甲基)丙烯酸酯、含氟(甲基)丙烯酸酯、硅酮(甲基)丙烯酸酯;多官能单体,例如己二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧丙烯酸酯、聚酯丙烯酸酯、聚氨酯丙烯酸酯、二乙烯基苯、二(甲基)丙烯酸丁酯、二(甲基)丙烯酸己酯等。可单独或组合使用一种以上这些可共聚合单体组分。
可用于本发明的照射固化型压敏粘合剂(或能量射线固化型压敏粘合剂)(组合物)包括例如内部型照射固化型压敏粘合剂,其包括作为基础聚合物的在聚合物侧链、主链或主链末端具有自由基反应性碳-碳双键的聚合物;和通过在压敏粘合剂中引入UV固化型单体组分或低聚物组分制备的照射固化型压敏粘合剂。此处还可使用热膨胀压敏粘合剂,其包括例如含有压敏粘合剂和发泡剂(特别是热膨胀微球)的那些。
在本发明中,在不损害本发明优点的范围内,压敏粘合剂层32可包含各种添加剂(例如,增粘剂、着色剂、增稠剂、增量剂、填料、增塑剂、防老剂、抗氧化剂、表面活性剂、交联剂等)。
对交联剂没有特别限制,可使用已知的交联剂。具体地, 作为交联剂,不仅可提及异氰酸酯类交联剂、环氧类交联剂、三聚氰胺类交联剂和过氧化物类交联剂,而且还可提及脲类交联剂、金属醇盐类交联剂、金属螯合物类交联剂、金属盐类交联剂、碳二亚胺类交联剂、噁唑啉类交联剂、氮丙啶类交联剂和胺类交联剂等,异氰酸酯类交联剂和环氧类交联剂是适宜的。交联剂可单独或两种以上组合使用。此外,对交联剂的使用量没有特别限制。
异氰酸酯类交联剂的实例包括低级脂肪族聚异氰酸酯,例如1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯和1,6-六亚甲基二异氰酸酯;脂环族聚异氰酸酯例如亚环戊基二异氰酸酯、亚环己基二异氰酸酯、异佛尔酮二异氰酸酯、氢化甲苯二异氰酸酯和氢化苯二甲撑二异氰酸酯;和芳香族聚异氰酸酯,例如2,4-亚甲苯基二异氰酸酯、2,6-亚甲苯基二异氰酸酯、4,4’-二苯甲烷二异氰酸酯和亚二甲苯基二异氰酸酯。另外,还可使用三羟甲基丙烷/亚甲苯基二异氰酸酯三聚体的加合物[商品名“COLONATE L”,由Nippon Polyurethane Industry Co.,Ltd.制造]和三羟甲基丙烷/六亚甲基二异氰酸酯三聚体的加合物[商品名“COLONATE HL”,由Nippon Polyurethane Industry Co.,Ltd.制造]等。另外,环氧基交联剂的实例包括N,N,N’,N’-四缩水甘油基间亚二甲苯基二胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨甲基)环己烷、1,6-己二醇二缩水甘油基、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、脱水山梨糖醇多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三缩水甘油基-三(2-羟乙基)异氰脲酸酯、间苯二酚二缩水甘油 醚和双酚-S-二缩水甘油醚以及分子中具有两个或多个环氧基的环氧类树脂。
本发明中代替使用交联剂或与交联剂一起使用,压敏粘合剂层可以通过用电子束或紫外线照射来交联。
压敏粘合剂层32可例如采用广泛使用的方法形成,所述方法包括将压敏粘合剂和任选的溶剂以及其它添加剂混合,然后将混合物成形为片状层。特别地,例如可提及包括在基材31上施涂包含压敏粘合剂和任选的溶剂以及其它添加剂的混合物的方法;或包括在适宜的隔离膜(如剥离纸)上施涂前述混合物,以形成压敏粘合剂层32,然后将其转移(转换)至基材31上的方法等。
没有特别限定,压敏粘合剂层32的厚度可为例如5μm-300μm(优选5μm-200μm,更优选5μm-100μm,甚至更优选7μm-50μm)左右。当压敏粘合剂层32的厚度落入该范围内时,所述层可表现出适宜的压敏粘合力。压敏粘合剂层32可以是单层或多层。
切割带3的压敏粘合剂层32对倒装芯片型半导体背面用膜2的粘合力(23℃,180度剥离角,30mm/min剥离速率)优选在0.02N/20mm-10N/20mm,更优选0.05N/20mm-5N/20mm范围内。当粘合力为至少0.02N/20mm时,可防止半导体芯片在切割半导体晶片时飞散出。另一方面,当粘合力为至多10N/20mm时,则其便于拾取半导体芯片时半导体芯片的剥离,并防止压敏粘合剂残留。
此外,在本发明中,可使倒装芯片型半导体背面用膜2或半导体背面用切割带集成膜1具有抗静电功能。由于该构造,能够防止电路由于以下原因导致的击穿:由于在其粘合时和剥离时静电能的产生或由于半导体晶片等通过静电能的带电。赋予抗 静电功能可通过适当的方式如以下方法进行:添加抗静电剂或导电性物质至基材31、压敏粘合剂层32和半导体背面用膜2的方法,或在基材31上设置由电荷转移配合物(complex)组成的导电层或金属膜等的方法。作为这些方法,优选难以产生具有改变半导体晶片品质风险的杂质离子的方法。为了赋予导电性和改进热传导性等的目的而共混的导电性物质(导电性填料)的实例包括银、铝、金、铜、镍或导电性合金等的球形、针形、薄片形金属粉末;金属氧化物如氧化铝;无定形炭黑和石墨。然而,从不具有漏电性的观点,半导体背面用膜2优选为非导电性的。
此外,倒装芯片型半导体背面用膜2或半导体背面用切割带集成膜1可以以卷绕成卷形物(roll)的形式形成或可以以将片材(膜)层压的形式形成。例如,在膜具有卷绕成卷形物的形式的情况下,根据需要,以通过隔离膜保护半导体背面用膜2或半导体背面用膜2和切割带的层压体的状态将膜卷绕成卷形物,由此可制备膜作为处于卷绕成卷形物状态或形式下的倒装芯片型半导体背面用膜2或半导体背面用切割带集成膜1。在这点上,处于卷绕成卷形物状态或形式下的半导体背面用切割带集成膜1可由基材31、在基材31的一个表面上形成的压敏粘合剂层32、在压敏粘合剂层32上形成的半导体背面用膜2,和在基材31的另一表面上形成的可剥离处理层(背面处理层)构成。
此外,半导体背面用切割带集成膜1的厚度(半导体背面用膜厚度和包含基材31和压敏粘合剂层32的切割带厚度的总厚度)可例如选自8μm-1,500μm,优选20μm-850μm,更优选31μm-500μm,特别优选47μm-330μm的范围。
就此而言,在半导体背面用切割带集成膜1中,通过控制半导体背面用膜2的厚度与切割带3中压敏粘合剂层32厚度之比,或半导体背面用膜2的厚度与切割带厚度(基材31和压敏粘合剂 层32的总厚度)之比,可改进切割步骤的切割性和拾取步骤的拾取性等,且半导体背面用切割带集成膜1可有效地用于半导体晶片切割步骤至半导体芯片的倒装芯片接合步骤。
(半导体背面用切割带集成膜的生产方法)
在使用示于图1的半导体背面用切割带集成膜1为实例的同时描述根据本实施方案的半导体背面用切割带集成膜的生产方法。首先,通过常规已知的成膜法形成基材31。所述成膜法的实例包括压延成膜法、在有机溶剂中的流延法、在严格密闭体系中的膨胀挤出法、T-模挤出法、共挤出法和干法层压法。
接着,将压敏粘合剂组合物施涂至基材31,并在其上干燥(任选地,在加热下交联),以形成压敏粘合剂层32。涂覆体系包括辊涂、丝网涂布(screen coating)和凹版涂布(gravure coating)等。压敏粘合剂组合物可直接施涂至基材31,以在基材31上形成压敏粘合剂层32;或可将压敏粘合剂组合物施涂至表面进行了润滑处理的剥离纸等上,以在其上形成压敏粘合剂层32,并将压敏粘合剂层32转移至基材31上。由此,形成具有形成于基材31上的压敏粘合剂层32的切割带3。
另一方面,涂布层可通过以下形成:将用于形成半导体背面用膜2的形成材料施涂至剥离纸上以在干燥后具有规定厚度,并在规定条件下进一步将其干燥(在需要热固化的情况下,根据需要进行热处理和干燥)。通过将该涂布层转移至压敏粘合剂层32上,在压敏粘合剂层32上形成半导体背面用膜2。就此而言,半导体背面用膜2也能够通过以下在压敏粘合剂层32上形成:在压敏粘合剂层32上直接施涂用于形成半导体背面用膜2的形成材料,接着在规定条件下干燥(在需要热固化的情况下,根据需要,进行热处理和干燥)。因此,能够获得根据本发明的半导体背面用切割带集成膜1。此外,在半导体背面用膜2形成时进行 热固化的情况下,重要的是热固化实施至实现部分固化的程度,但优选不进行热固化。
本发明的半导体背面用切割带集成膜1能够在包括倒装芯片连接步骤的半导体器件生产时适当使用。即,在倒装芯片安装的半导体器件生产时使用本发明的半导体背面用切割带集成膜1,因此以将半导体背面用切割带集成膜1的半导体背面用膜2粘贴至半导体芯片背面的条件或形式生产倒装芯片安装的半导体器件。因此,可将本发明的半导体背面用切割带集成膜1用于倒装芯片安装的半导体器件(处于将半导体芯片固定至被粘物如基板的状态或形式的半导体器件)。
与半导体背面用切割带集成膜1中类似,半导体背面用膜2还可用于倒装芯片安装的半导体器件(通过倒装芯片接合法处于将半导体芯片采用倒装芯片接合法固定至被粘物如基板的状态或形式的半导体器件)中。
(半导体晶片)
对半导体晶片没有特别限制,只要其为已知或通常使用的半导体晶片即可,并可在各种材料制成的半导体晶片中适宜地选择和使用。在本发明中,作为半导体晶片,可适宜地使用硅晶片。
(半导体器件的生产方法)
根据本发明的半导体器件的生产方法将参考图2A-2D描述。图2A-2D为显示在使用半导体背面用切割带集成膜1的情况下,生产半导体器件方法的截面示意图。
根据半导体器件的生产方法,可采用半导体背面用切割带集成膜1生产半导体器件。具体地,所述方法包括将半导体晶片粘贴至半导体背面用切割带集成膜上的步骤,切割半导体晶片的步骤,拾取通过切割得到的半导体元件的步骤,和在被粘物 上倒装芯片接合半导体元件的步骤。
此外,当采用半导体背面用膜2时,还可根据采用半导体背面用切割带集成膜1的半导体器件生产方法来生产半导体器件。例如,将半导体背面用膜2粘贴至切割带上并与之集成,以制备半导体背面用切割带集成膜,并可采用切割带集成膜生产半导体器件。在此情况下,采用半导体背面用膜2的半导体器件生产方法包括构成采用上述半导体背面用切割带集成膜的半导体器件生产方法的步骤,和与之结合的以使得半导体背面用膜能够与切割带的压敏粘合剂层相接触的方式粘贴半导体背面用膜和切割带的额外步骤。
可选地,可通过将半导体背面用膜2直接粘贴至半导体晶片上来使用半导体背面用膜2,而无需与切割带集成。在此情况下,代替在采用上述半导体背面用切割带集成膜的半导体器件生产方法中将半导体晶片粘贴至半导体背面用切割带集成膜上的步骤,以使得半导体背面用膜与切割带的压敏粘合剂层接触的方式,采用半导体背面用膜2的半导体器件生产方法包括将半导体背面用膜粘贴至半导体晶片的步骤,和随后的将切割带粘贴到至其粘贴有半导体晶片的半导体背面用膜的步骤。
在其另一应用实施方案中,可将半导体背面用膜2直接粘贴至通过将半导体晶片切割成独立半导体芯片制备的半导体芯片。在此情况下,采用半导体背面用膜2的半导体器件生产方法包括例如至少以下步骤:将切割带粘贴至半导体晶片的步骤,切割半导体晶片的步骤、拾取通过切割得到的半导体元件的步骤、将半导体元件倒装芯片连接至被粘物上的步骤和将半导体背面用膜粘贴至半导体元件的步骤。
(安装步骤)
首先,如图2A所示,将任选地在半导体背面用切割带集成 膜1的半导体背面用膜2上设置的隔离膜适当剥离并将半导体晶片4粘贴至半导体背面用膜2上以通过粘合和保持来固定(安装步骤)。在此情况下,半导体背面用膜2处于未固化状态(包括半固化状态)。此外,将半导体背面用切割带集成膜1粘贴至半导体晶片4的背面。半导体晶片4的背面是指与电路面相对的面(也称为非电路面、非电极形成面等)。粘贴方法不特别限制,但优选通过压接的方法。压接通常在用加压装置如加压辊加压的同时进行。
(切割步骤)
接着,如图2B所示,切割半导体晶片4。从而,将半导体晶片4切断成规定尺寸并个体化(成形为小片),以生产半导体芯片5。例如,所述切割根据常规方法从半导体晶片4的电路面侧进行。此外,本步骤可采取例如形成到达半导体背面用切割带集成膜1的切口(slit)的称作完全切断的切断方法。用于本步骤的切割设备没有特别限定,可使用常规已知的设备。进一步地,由于将半导体晶片4通过具有半导体背面用膜的半导体背面用切割带集成膜1粘贴并固定,因此可抑制芯片破裂和芯片飞散,以及还可抑制半导体晶片4破损。就此而言,当半导体背面用膜2由包含环氧树脂的树脂组合物形成时,即使当将其通过切割切断时,也抑制或防止在切断面处发生粘合剂从半导体背面用膜的粘合剂层挤出。结果,可抑制或防止切断面自身的再粘贴(粘连(blocking)),从而可更加方便地进行以下要描述的拾取。
在半导体背面用切割带集成膜1扩展(expanding)的情况下,扩展可使用常规已知的扩展设备进行。所述扩展设备具有能够推动半导体背面用切割带集成膜1向下通过切割环的环形外环,和直径小于外环并支持半导体背面用切割带集成膜的内环。由于该扩展步骤,可以防止相邻的半导体芯片在以下要描述的拾 取步骤中通过彼此接触而损坏。
(拾取步骤)
为收集粘合并固定于半导体背面用切割带集成膜1的半导体芯片5,如图2C所示,实施半导体芯片5的拾取,以与半导体背面用膜2一起从切割带3上剥离半导体芯片5。对拾取方法没有特别限制,可采用常规已知的各种方法。例如,可提及包括用针状物从半导体背面用切割带集成膜1的基材31侧向上推动各半导体芯片5,并用拾取设备拾取推起的半导体芯片5的方法。在这点上,拾取的半导体芯片5的背面用半导体背面用膜2保护。
(倒装芯片连接步骤)
如图2D所示,将拾取的半导体芯片5根据倒装芯片接合法(倒装芯片安装法)固定在被粘物如基板上。具体地,以半导体芯片5的电路面(也称为正面、电路图案形成面或电极形成面)可面向被粘物6的形式,根据常规方式将半导体芯片5固定至被粘物6上。例如,当在半导体芯片5的电路面侧上形成的凸块51与粘贴至被粘物6的连接垫的接合导电性材料61(例如焊料)接触时,使导电性材料61熔融,从而保证半导体芯片5与被粘物6之间的电连接,由此将半导体芯片5固定至被粘物6(倒装芯片接合步骤)。在此情况下,半导体芯片5与被粘物6之间形成间隙,间隙距离可以通常为约30μm-300μm左右。在将半导体芯片5倒装芯片接合(倒装芯片连接)至被粘物6之后,重要的是将半导体芯片5和被粘物6之间的界面以及间隙洗净,然后通过用包封材料(例如包封树脂)填充间隙来密封两者。
作为被粘物6,可使用各种基板如引线框和电路板(如布线电路板)。基板的材料没有特别限定,可提及陶瓷基板和塑料基板。塑料基板的实例包括环氧基板、双马来酰亚胺三嗪基板和聚酰亚胺基板。
在倒装芯片接合步骤中,凸块的材料和导电性材料没有特别限定,其实例包括焊料(合金)如锡-铅类金属材料、锡-银类金属材料、锡-银-铜类金属材料、锡-锌类金属材料和锡-锌-铋类金属材料,以及金类金属材料和铜类金属材料。
此外,在倒装芯片接合步骤中,将导电性材料熔融,以连接半导体芯片5电路面侧的凸块和被粘物6表面上的导电性材料。导电性材料熔融时的温度通常为约260℃(例如250℃-300℃)。通过用环氧树脂等形成半导体背面用膜,可使本发明的半导体背面用切割带集成膜具有能够耐受在倒装芯片接合步骤中的高温的耐热性。
在本步骤中,优选洗涤半导体芯片5和被粘物6之间的相对面(电极形成面)以及间隙。在洗涤时使用的洗涤液没有特别限定,其实例包括有机洗涤液和水性洗涤液。在本发明的半导体背面用切割带集成膜中的半导体背面用膜具有对洗涤液的耐溶剂性,并且对这些洗涤液基本不具有溶解性。因此,如上所述,可采用各种洗涤液作为该洗涤液,并可通过任何常规方法而无需任何特别的洗涤液实现该洗涤。
接着,进行包封步骤以包封倒装芯片接合的半导体芯片5和被粘物6之间的间隙。包封步骤使用包封树脂进行。在此情况下的包封条件不特别限制,但包封树脂的热固化(再流)通常在175℃下进行60秒至90秒。在本发明中,固化不限于此,例如可在165至185℃的温度下进行几分钟。在此步骤的热处理中,不仅包封树脂而且半导体背面用膜2的热固化同时实施。从而,将包封树脂和半导体背面用膜2固化,并随着热固化的进行而收缩。结果,可通过半导体背面用膜2的固化和收缩抵消或减轻源自包封树脂固化和收缩的施加于半导体芯片5的应力。此外,通过该步骤,可将半导体背面用膜2完全或几乎完全热固化,并可 以优异的粘合性粘贴至半导体元件的背面。另外,由于根据本发明的半导体背面用膜2即使当所述膜处于未固化状态下,也可与包封材料一起在包封步骤中热固化,从而无需添加新的热固化半导体背面用膜2的步骤。
对包封材料没有特别限制,只要所述材料为具有绝缘性的树脂(绝缘树脂),并可从已知的包封材料如包封树脂中适宜地选择和使用即可。包封树脂优选为具有弹性的绝缘树脂。包封树脂的实例包括含有环氧树脂的树脂组合物。作为环氧树脂,可提及上述列举的环氧树脂。此外,由包含环氧树脂的树脂组合物组成的包封树脂除了环氧树脂之外还可包含除了环氧树脂之外的热固性树脂(如酚醛树脂)或热塑性树脂。此外,也可利用酚醛树脂作为环氧树脂用固化剂,作为此类酚醛树脂,可提及以上示例的酚醛树脂。
根据使用半导体背面用切割带集成膜1或半导体背面用膜2制造的半导体器件(倒装芯片安装的半导体器件),将半导体背面用膜粘贴至半导体芯片背面,因此,可以以优良的可见度实施激光标识。特别地,即使当标识方法是激光标识法时,激光标识也能够以优良的对比度实施,并可以观察通过具有良好可见度的激光标识实施的各种信息(例如文字信息和图形信息)。在激光标识时,可利用已知激光标识设备。此外,作为激光器,可以利用各种激光器如气体激光器、固态激光器和液体激光器。具体地,作为气体激光器,可利用任何已知的气体激光器而没有特别限制,但二氧化碳激光器(CO2激光器)和准分子激光器(ArF激光器、KrF激光器、XeCl激光器、XeF激光器等)是适宜的。作为固态激光器,可利用任何已知的固态激光器而没有特别限定,但YAG激光器(如Nd:YAG激光器)和YVO4激光器是适宜的。
半导体背面用膜2的激光标识后,可根据需要实施热处理(激光标识后实施的再流步骤)。对热处理的条件没有特别限制,但可根据JEDEC Solid State Technology Association(JEDEC)标准实施。例如,可在210-270℃温度(上限)范围内实施5-50秒时间。通过该步骤,可将半导体封装安装至基板(如母板)上。
由于使用本发明的半导体背面用切割带集成膜1或半导体背面用膜2生产的半导体器件为通过倒装芯片安装法安装的半导体器件,所以该器件与通过模片接合安装法安装的半导体器件相比具有薄型化和小型化的形状。因此,可适当采用这些半导体器件作为各种电子器件和电子部件或其材料和构件。具体地,作为利用本发明的倒装芯片安装的半导体器件的电子器件,可提及所谓的“移动电话”和“PHS”,小型计算机[例如,所谓的“PDA”(手持终端),所谓的“笔记本尺寸的个人计算机”,所谓的“Net Book(商标)”和所谓的“可穿戴计算机”等],具有“移动电话”和计算机集成形式的小型电子器件,所谓的“Digital Camera(商标)”,所谓的“数码摄像机”,小型电视机,小尺寸游戏机,小型数字音频播放机,所谓的“电子记事本”,所谓的“电子词典”,用于所谓的“电子书”的电子器件终端和移动电子器件(可携带电子器件)如小尺寸数字型手表等。不必说,也可提及除了移动器件之外的电子器件(固定型电子器件等),例如所谓的“桌面个人计算机”、薄型电视机、用于记录和复制的电子器件(硬盘记录机(hard disk recorders)、DVD播放机等)、投影仪和微型机等。另外,电子部件或用于电子器件和电子部件的材料和构件没有特别限制,其实例包括用于所谓“CPU”的部件和用于各种记忆器件(所谓的“存储器”、硬盘等)的构件。
实施例
以下将详细地说明性描述本发明的优选实施例。然而,本 发明不限于以下实施例,除非其超出本发明的主旨。此外,除非另外说明,在各实施例中的份为重量标准。
(实施例1)
<倒装芯片型半导体背面用膜的制备>
基于100份具有丙烯酸乙酯和甲基丙烯酸甲酯作为主要组分的丙烯酸酯类聚合物(商品名:“PARACRON W-197CM”,由Negami Chemical Industrial Co.,Ltd.制造),将117份环氧树脂(商品名“EPIKOTE 1004”,由JER Co.,Ltd.制造)、117份酚醛树脂(商品名“MIREX XLC-4L”,由Mitsui Chemical,Inc.制造)、83份球形二氧化硅(商品名“SO-25R”,由Admatechs Company Limited制造)、4份染料(商品名“Oil Black BS”,由Orient Chemical Industries Co.,Ltd.制造)和1.7份热固化促进催化剂(商品名“2PHZ-PW”,Shikoku Chemicals Corporation制造)溶解于甲乙酮中,以制备具有23.6重量%固体浓度的粘合剂组合物溶液。
将该树脂组合物溶液涂布至作为剥离衬垫(隔离体)已经进行硅酮剥离处理的由厚度为38μm的聚对苯二甲酸乙二酯膜组成的可剥离处理膜上,然后在130℃下干燥2分钟,以制备具有厚度(平均厚度)为20μm的倒装芯片型半导体背面用膜。
(实施例2-16和对比例1和2)
在实施例2-16和对比例1和2中,除了将各共混量变为表1所示以外,采用与实施例1相同的方式制备倒装芯片型半导体背面用膜。在表1中,空白表示0重量份。各得到的倒装芯片型半导体背面用膜的厚度示于表2。
表1
(单位:重量份)
(体积收缩率)
如下测定热固化前倒装芯片型半导体背面用膜在热固化中在23℃-165℃范围内的体积收缩率。
首先,为测量实施例1-16和对比例1和2的各倒装芯片型半导体背面用膜的体积收缩率,制备厚度为60μm的各倒装芯片型半导体背面用膜。然后,制备通过在具有10mm×10mm尺寸和0.05mm厚度的半导体芯片上层压具有厚度60μm的倒装芯片型半导体背面用膜获得的样品,测量在165℃条件下实施固化2小时时的翘曲度“X”。基于下面提及的方法,测量翘曲度。然后,对于在具有10mm×10mm尺寸和0.05mm厚度的半导体芯片上层压具有厚度60μm的倒装芯片型半导体背面用膜的结构,通过改变其假定线性膨胀系数实施模拟,以确定翘曲度为X时的线性膨胀系数。然后,将线性膨胀系数乘以3得到体积膨胀比。此时,在模拟中,在165℃-23℃范围内改变温度,并在该温度范围内假定线性膨胀系数恒定。
<热固化后在23℃下拉伸贮能模量的测量>
拉伸贮能模量通过以下获得:制备热固化半导体背面用膜,并在10mm样品宽度、22.5mm样品长度、0.2mm样品厚度、1Hz频率和10℃/min升温速率条件下,在氮气气氛中于预定温度(23℃)下,采用Rheometrics Co.,Ltd.生产的动态粘弹性测量设备“Solid Analyzer RS A2”在拉伸模式下测量模量。结果示于表2。
(半导体封装的翘曲度)
从半导体背面用切割带集成膜首次剥离隔离膜后,将半导体晶片(直径:8英寸,厚度:200μm;硅镜面晶片)在70℃下通过辊压接合粘贴至半导体背面用膜上。进一步地,实施半导体晶片切割。此处,所述切割作为完全切断进行,以成为10mm见方的芯片尺寸。就此而言,粘贴条件和切割条件如下。
[粘贴条件]
粘贴设备:商品名“MA-3000III”,由Nitto Seiki Co.,Ltd.制造
粘贴速率:10mm/min
粘贴压力:0.15MPa
粘贴时的阶段温度:70℃
[切割条件]
切割设备:商品名“DFD-6361”,由DISCO Corporation制造
切割环:“2-8-1”(由DISCO Corporation制造)
切割速率:30mm/秒
切割刀:
Z1;由DISCO Corporation制造的“203O-SE 27HCDD”
Z2;由DISCO Corporation制造的“203O-SE 27HCBB”
切割刀转速:
Z1;40,000r/min
Z2;45,000r/min
切割法:阶梯切割(step cutting)
晶片芯片尺寸:10.0mm见方
接着,通过用针状物从半导体背面用切割带集成膜的切割带侧向上推动,将通过切割得到的半导体芯片与倒装芯片型半导体背面用膜一起从压敏粘合剂层拾取。拾取条件如下。
[拾取条件]
拾取设备:商品名“SPA-300”,由Shinkawa Co.,Ltd.制造
拾取针状物的数量:9个针状物
针状物的向上推动速度:20mm/s
针状物的向上推动距离:500μm
拾取时间:1秒
切割带扩展量:3mm
随后,将半导体芯片倒装接合至BT基板[采用由Mitsubishi Gas Chemical Co.,Inc.制造的BT树脂(双马来酰亚胺三嗪类树脂)的基材]上。此时,如下实施接合:将半导体芯片电路面面向BT基板,并使半导体芯片电路面上形成的凸块与粘合至BT基板的连接垫的接合用导电性材料(焊料)接触,并升温至260℃,以在压力下熔融导电性材料,然后冷却至室温。此外,将作为包封树脂的底填料材料填充至半导体芯片与BT基板的间隙中。底填料(包封材料)的厚度为20μm。然后,测量半导体封装的翘曲度(再流前半导体封装的翘曲度)。结果示于表2。
随后,在260℃条件下加热半导体封装30分钟,然后测量半导体封装的翘曲度(再流后半导体封装的翘曲度)。结果示于表2。
翘曲度的测量通过以下施行:首先将半导体封装放置在平 板上,使得BT基板处于下方,并测量从平板上上升的BT基板高度,即翘曲度(μm)。测量在1.5mm/s测量速率和1g负荷条件下,采用接触型表面粗糙度计(DEKTAK 8,由Veeco Instruments Inc.制造)实施。作为测量的结果,将翘曲度为100μm以下的情况评级为“非常好”,将翘曲度为100μm以上至500μm以下的情况评级为“良好”,将翘曲度为500μm以上至1,000μm以下的情况评级为“中等”,和将翘曲度大于1,000μm的情况评级为“差”。
表2
(结果)
如由表2可知,证实如实施例1-16所示,当半导体背面用膜为在热固化前倒装芯片型半导体背面用膜的热固化时在23℃-165℃范围内的体积收缩率为100ppm/℃以上至400ppm/℃以下时,可抑制半导体封装的翘曲度。
虽然已参照其具体实施方案详细地描述本发明,但对于本 领域技术人员,其中可进行各种变化和改进而不背离其范围将显而易见。
本申请基于2010年7月28日提交的日本专利申请2010-169501,将其全部内容在此引入作为参考。
Claims (8)
1.一种倒装芯片型半导体背面用膜,其形成于倒装芯片连接至被粘物上的半导体元件的背面,
其中热固化前的倒装芯片型半导体背面用膜在其热固化时,在23℃-165℃范围内的体积收缩率为100ppm/℃-400ppm/℃。
2.根据权利要求1所述的倒装芯片型半导体背面用膜,其中热固化后的倒装芯片型半导体背面用膜在23℃下的拉伸贮能模量在1GPa-5GPa范围内。
3.根据权利要求1所述的倒装芯片型半导体背面用膜,其中所述倒装芯片型半导体背面用膜具有10μm-40μm范围内的厚度。
4.根据权利要求2所述的倒装芯片型半导体背面用膜,其中所述倒装芯片型半导体背面用膜具有10μm-40μm范围内的厚度。
5.一种半导体背面用切割带集成膜,其包括切割带和层压于所述切割带上的根据权利要求1所述的倒装芯片型半导体背面用膜,
其中所述切割带包括基材和层压于所述基材上的压敏粘合剂层,所述倒装芯片型半导体背面用膜层压于所述切割带的所述压敏粘合剂层上。
6.一种使用根据权利要求5所述的半导体背面用切割带集成膜生产半导体器件的方法,所述方法包括:
将半导体晶片粘贴至所述半导体背面用切割带集成膜的倒装芯片型半导体背面用膜上,
切割所述半导体晶片以形成半导体元件,
将所述半导体元件与所述倒装芯片型半导体背面用膜一起从切割带的压敏粘合剂层剥离,和
将所述半导体元件连接至被粘物上。
7.根据权利要求6所述的生产半导体器件的方法,其中所述倒装芯片连接包括将包封树脂填充至所述被粘物与倒装芯片接合至所述被粘物上的半导体元件之间的间隙中,然后热固化所述包封树脂。
8.一种倒装芯片型半导体器件,其通过根据权利要求6所述的方法制造。
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US9293387B2 (en) | 2016-03-22 |
KR20120011822A (ko) | 2012-02-08 |
TW201207080A (en) | 2012-02-16 |
KR20150097446A (ko) | 2015-08-26 |
JP5384443B2 (ja) | 2014-01-08 |
US20120025400A1 (en) | 2012-02-02 |
TWI437072B (zh) | 2014-05-11 |
CN102376611B (zh) | 2015-08-05 |
JP2012033554A (ja) | 2012-02-16 |
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