CN111276424A - 蚀刻装置及其操作方法 - Google Patents
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Abstract
本发明公开了一种蚀刻装置及其操作方法。蚀刻装置包括腔室、晶圆座、气体源、真空密封装置与感应线圈。晶圆座设置于腔室内,其中晶圆座具有晶圆安装表面,晶圆安装表面平行于重力方向。气体源配置成产生气体。真空密封装置连接于气体源与腔室之间。感应线圈缠绕真空密封装置,以激发气体成等离子体。通过使用上述的蚀刻装置,晶圆的顶表面的污染问题可以被解决,且晶圆的效能可以被改善。
Description
技术领域
本发明是有关于一种用于执行蚀刻工艺的装置及其操作方法。特别地,本发明是关于一种用于执行例如光阻剥离(photoresist stripping)的干式蚀刻工艺的装置及其操作方法。
背景技术
在当前的半导体产业中,通常使用干式蚀刻工艺来执行光阻剥离。再者,当执行转换(transfer)光阻图案的操作时,干式(例如等离子体)蚀刻工艺由于具有高精度的优点,因此等离子体蚀刻工艺可用于在半导体生产线上处理大量晶圆。
然而,等离子体蚀刻工艺经常产生大量的颗粒,例如因暴露在等离子体下而基于化学机制产生并经电子附着的带负电副产物。由于腔室中磁场与电场之间的相互作用,使带负电副产物悬浮于晶圆上方,且不容易被移除。因此,在执行等离子体蚀刻工艺之后,悬浮的带负电副产物(颗粒)即掉落在晶圆的顶表面上,而造成污染。
发明内容
本发明的目的在于提供一种蚀刻装置操作方法,其能够使晶圆顶表面的污染问题得以解决,且晶圆的效能可以被改善的。
依据本发明的一些实施方式中,一种蚀刻装置操作方法,包括以下步骤。在晶圆座的晶圆安装表面上设置晶圆,晶圆座设置于腔室中,其中晶圆安装表面平行于重力方向。从气体源往真空密封装置内流入气体,其中感应线圈缠绕于真空密封装置,将气体激发成等离子体。向晶圆注入等离子体。
依据本发明的一些实施方式中,蚀刻装置操作方法还包括当晶圆设置于晶圆座上时,通过连接于腔室的至少一排气管执行排气操作。
依据本发明的一些实施方式,蚀刻装置操作方法还包括以下步骤。移除晶圆。在移除晶圆之后,执行清洗操作。
依据本发明的一些实施方式,其中执行清洗操作还包括以下步骤。通过连接到真空密封装置的第一端与第二端的排气管,执行排气操作。在真空密封装置与腔室之间设置阻挡膜,以使真空密封装置与腔室分离。
依据本发明的一些实施方式,渐缩部分从顶部分往底部分渐缩。
依据本发明的一些实施方式,排气管与真空密封装置由陶瓷材料制成。
依据本发明的一些实施方式,一种蚀刻装置包括腔室、晶圆座、气体源、真空密封装置与感应线圈。晶圆座设置于腔室内,其中晶圆座具有晶圆安装表面,晶圆安装表面平行于重力方向。气体源配置成产生气体。真空密封装置连接于气体源与腔室之间。感应线圈缠绕真空密封装置,以激发气体成等离子体。
依据本发明的一些实施方式,晶圆座具有夹持销,配置成固定晶圆于晶圆座的晶圆安装表面上。
依据本发明的一些实施方式,晶圆座具有静电夹持,配置成固定晶圆于晶圆座的晶圆安装表面上。
依据本发明的一些实施方式,蚀刻装置还包括至少一排气管,连接于腔室。
依据本发明的一些实施方式,蚀刻装置还包括排气管与阻挡膜。排气管连接于真空密封装置的第一端与第二端。阻挡膜设置于真空密封装置与腔室之间。
依据本发明的一些实施方式,排气管为Y字形。
依据本发明的一些实施方式,排气管由陶瓷材料制成。
依据本发明的一些实施方式,晶圆座包括加热器。
依据本发明的一些实施方式,真空密封装置由陶瓷材料制成。
依据本发明的一些实施方式,真空密封装置为菱形、圆形或半圆形。
综上所述,本发明提供一种用于执行蚀刻工艺的装置及其方法。晶圆设置于晶圆座的晶圆安装表面上,且晶圆座的晶圆安装表面平行于重力方向,故颗粒会掉落于晶圆的侧表面上,而不会掉落于晶圆的顶表面上。因此,晶圆的顶表面的污染问题可以被解决,且晶圆的效能可以被改善。
应当了解前面的一般说明和以下的详细说明都仅是示例,并且旨在提供对本发明的进一步解释。
附图说明
本发明的各方面可从以下实施方式的详细说明及随附的附图理解。
图1是根据本发明的一实施方式于一操作阶段的一蚀刻装置的示意图。
图2是根据本发明的一实施方式于另一操作阶段的蚀刻装置的示意图。
图3是根据本发明的一实施方式于执行一清洗操作的蚀刻装置的示意图。
图4是根据本发明的另一实施方式于一操作阶段的蚀刻装置的示意图。
图5是根据本发明的另一实施方式于另一操作阶段的蚀刻装置的示意图。
具体实施方式
现在将参照本发明的实施方式,其示例被绘示在附图中。本发明在附图及说明书中尽量使用相同的附图元件号码,来表示相同或相似的部分。
图1是根据本发明的一实施方式于一操作阶段的一蚀刻装置10的示意图,而图2是根据本发明的一实施方式于另一操作阶段的蚀刻装置10的示意图。参阅图1,蚀刻装置10包括腔室100、晶圆座200、真空密封装置300、气体源400,以及感应线圈500。晶圆座200设置于腔室100内。晶圆座200具有晶圆安装表面202,晶圆安装表面202平行于重力方向G。
真空密封装置300连接于腔室100与气体源400之间。如图1所示,气体源400可沿方向D1注入气体于真空密封装置300中,注入的气体可例如是氧气或其他气体。感应线圈500缠绕在真空密封装置300周围,以将气体激发成等离子体。而后,沿方向D2将等离子体注入腔室100中。在一些实施方式中,感应线圈500可以是射频感应线圈(radio frequencyinductive coil;RF inductive coil)。感应线圈500可由RF源供电,提供足够的电能至真空密封装置300中,以将其中的气体激发成等离子体。
在一些实施方式中,真空密封装置300可由陶瓷材料制成,但是本发明并不限于此。在其他的实施方式中,真空密封装置300可以由其他适当的材料制成。举例来说,真空密封装置300可以至少提供以下两种功能。陶瓷材料形成真空壁,可用于将真空密封装置300的内部保持在足够低的压力下,以形成等离子体。再者,真空密封装置300还可以用作介电窗(dielectric window),以使RF感应电从外部放置的感应线圈500进入真空密封装置300的内部。在本实施方式中,真空密封装置300是菱形。在其他的实施方式中,真空密封装置300可以是圆形、半圆形或其他适当的形状。
在一些实施方式中,晶圆座200具有夹持销(chuck pin)210。夹持销210被配置成固定晶圆204(如图2所示)于晶圆座200的晶圆安装表面202上。如图1所示,夹持销210安装于晶圆安装表面202上。每个夹持销210具有第一部分212与第二部分214,用以夹住晶圆204(如图2所示),且第二部分214系可枢接地连接于第一部分212。
参阅图2。图2绘示通过使用夹持销210以固定晶圆座200上的晶圆204的另一操作状态,并且执行蚀刻工艺。详细来说,晶圆204直接设置在晶圆安装表面202上,并且晶圆204的顶表面平行于重力方向G。如图2所示,第二部分214朝向晶圆204移动,以固定晶圆204于晶圆座200上。举例来说,第一部分212与第二部分214之间的角度为小于90度的锐角,以有助于固定晶圆204。在一些实施方式中,夹持销210的表面涂覆有一材料,以有助于夹持销210与晶圆204之间的接触,其中上述的材料可以是例如钽(tantalum)、碳化硅(siliconcarbide)或其他适当的材料。
在一些实施方式中,晶圆座200还包括加热器220。加热器220用于加热晶圆204。举例来说,电源(未绘示)可向加热器220提供直流电力(DC power),且加热器220可向晶圆204提供辐射能量。
如图2所示,在诸如等离子体干式蚀刻工艺的蚀刻工艺期间,气体源400沿着方向D1注入气体至真空密封装置300中。在气体流入真空密封装置300之后,气体被激发成等离子体。等离子体沿着方向D2被注入至腔室100中的晶圆204,其中在腔室100中会产生颗粒。由于晶圆204的顶表面平行于重力方向G,所以掉落在晶圆204顶表面的颗粒会再掉落于腔室100的侧壁上,而使晶圆204的顶表面没有颗粒,进而可改善晶圆204的性能。换句话说,由于晶圆安装表面202平行于重力方向G,故颗粒会掉落于晶圆204的侧表面上,随后再掉落于腔室100的侧壁上,则晶圆204顶表面的污染问题可以被解决,进而可改善晶圆204的性能。
在本实施方式中,如图1与图2所示,蚀刻装置10还包括连接于腔室100的至少一排气管600。排气管600连接于腔室100的侧壁。在一些实施方式中,排气管600的数量可以是两个或两个以上,但是至少一个排气管600是设置在腔室100的底部附近。如图2所示,执行排气操作(purging operation)以移除颗粒。详细来说,当晶圆204是设置在晶圆座200上时,颗粒沿着方向D3与方向D4通过排气管600而被移除。
图3是根据本发明的一实施方式于执行清洗操作的蚀刻装置10的示意图。如图3所示,在从晶圆座200移除图2的晶圆204之后,执行清洗操作(clean operation)以防止颗粒粘附在真空密封装置300的表面上。清洗操作可包括以下步骤。通过连接到真空密封装置300的第一端302与第二端304的排气管610执行排气操作。阻挡膜700设置在真空密封装置300与腔室100之间,以使真空密封装置300与腔室100分离。换句话说,阻挡膜700可以限制颗粒的移动。例如,由于阻挡膜700的置放位置,颗粒无法从腔室100往真空密封装置300移动,并且也无法从真空密封装置300往腔室100移动。
在一些实施方式中,排气管610为Y字形,但是本发明并不限于此。举例来说,排气管610具有第一排气管612、第二排气管614与第三排气管616。真空密封装置300的第一端302连接于第一排气管612,而真空密封装置300的第二端304连接于第二排气管614。如图3所示,在执行清洗操作时,气体源400可提供气体,此气体可例如是氧气,或用于从真空密封装置300中移除颗粒的其他气体。详细来说,当执行蚀刻工艺时,在腔室100中产生颗粒,并且一部分的颗粒可以从腔室100往真空密封装置300流入,故执行清洗操作,以移除真空密封装置300中的残留颗粒。由于真空密封装置300连接排气管610,颗粒会通过第一排气管612与第二排气管614,而后通过第三排气管616,并沿方向D5移除。
在一些实施方式中,排气管610由陶瓷材料制成。在其他的实施方式中,真空密封装置300与排气管610是由相同的材料制成,但是本发明并不限于此。举例来说,真空密封装置300与排气管610由陶瓷材料制成,此有助于移除颗粒。在一些实施方式中,排气管610连接于负压源(negative pressure source),此有助于执行排气操作。
图4是根据本发明的另一实施方式于一操作阶段的蚀刻装置10a的示意图,而图5是根据本发明的另一实施方式于另一操作阶段的蚀刻装置10的示意图。参阅图4。蚀刻装置10a包括腔室100、晶圆座200、真空密封装置300、气体源400以及感应线圈500。晶圆座200设置于腔室100内。晶圆座200具有晶圆安装表面202,且晶圆安装表面202平行于重力方向G。
参阅图5。图5绘示通过使用静电夹持(electrostatic chuck)230来固定晶圆204于晶圆座200上的另一操作状态,并且执行蚀刻工艺。详细来说,晶圆204直接设置在晶圆安装表面202上,并且晶圆204平行于重力方向G。在一些实施方式中,静电夹持230可以是任何适当类型的静电夹持230。举例来说,静电夹持230可以具有一个或多个区域(zones)。电力供应单元800可用于将电压施加到静电夹持230的相应区域。再者,控制单元810可执行某些控制功能。举例来说,控制单元810可用于控制电力供应单元800,以开始或停止将电压施加到静电夹持230的相应区域。当控制单元810控制电力供应单元800,以开始将电压施加到静电夹持230的区域中时,晶圆204被固定于晶圆座200上。
换句话说,当静电夹持230被控制,以持握晶圆204时,电力供应单元800向电极(未绘示)提供电压,并且电极在晶圆204与电极之间产生库仑力(Coulomb force)或Johnsen-Rahbek力,以使晶圆204可通过使用静电夹持230而被固定于晶圆座200上。
综上所述,本发明提供一种用于执行蚀刻工艺的装置及其方法。晶圆设置于晶圆座的晶圆安装表面上,且晶圆座的晶圆安装表面平行于重力方向,故颗粒会掉落于晶圆的侧表面上,而不会掉落于晶圆的顶表面上。因此,晶圆的顶表面的污染问题可以被解决,且晶圆的效能可以被改善。
虽然本发明已经将实施方式详细地公开如上,然而其他的实施方式也是可能的,并非用以限定本发明。因此,权利要求的精神及其范围不应限于本发明实施方式的说明。
本领域任何的技术人员,在不脱离本发明的精神和范围内,当可作各种的改变或替换,因此所有的这些改变或替换都应涵盖于本发明权利要求的保护范围之内。
Claims (15)
1.一种蚀刻装置操作方法,其特征在于,包含:
在晶圆座的晶圆安装表面上设置晶圆,所述晶圆座设置于腔室中,其中所述晶圆安装表面平行于重力方向;
从气体源往真空密封装置内流入气体,其中感应线圈缠绕所述真空密封装置,将所述气体激发成等离子体;以及
向所述晶圆注入所述等离子体。
2.如权利要求1所述的蚀刻装置操作方法,其特征在于,还包含:
当所述晶圆设置于所述晶圆座上时,通过连接于所述腔室的至少一排气管执行排气操作。
3.如权利要求1所述的蚀刻装置操作方法,其特征在于,还包含:
移除所述晶圆;以及
在移除所述晶圆之后,执行清洗操作。
4.如权利要求3所述的蚀刻装置操作方法,其特征在于,执行所述清洗操作还包含:
通过连接到所述真空密封装置的第一端与第二端的排气管,执行排气操作;以及
在所述真空密封装置与所述腔室之间设置阻挡膜,以使所述真空密封装置与所述腔室分离。
5.如权利要求4所述的蚀刻装置操作方法,其特征在于,所述排气管与所述真空密封装置由陶瓷材料制成。
6.一种蚀刻装置,其特征在于,包含:
腔室;
晶圆座,设置于所述腔室内,其中所述晶圆座具有晶圆安装表面,所述晶圆安装表面平行于重力方向;
气体源,配置成产生气体;
真空密封装置,连接于所述气体源与所述腔室之间;以及
感应线圈,缠绕于所述真空密封装置,以激发所述气体成等离子体。
7.如权利要求6所述的蚀刻装置,其特征在于,所述晶圆座具有夹持销,配置成固定晶圆于所述晶圆座的所述晶圆安装表面上。
8.如权利要求6所述的蚀刻装置,其特征在于,所述晶圆座具有静电夹持,配置成固定晶圆于所述晶圆座的所述晶圆安装表面上。
9.如权利要求6所述的蚀刻装置,其特征在于,还包含:
至少一排气管,连接于所述腔室。
10.如权利要求6所述的蚀刻装置,其特征在于,还包含:
排气管,连接于所述真空密封装置的第一端及第二端;以及
阻挡膜,设置于所述真空密封装置与所述腔室之间。
11.如权利要求10所述的蚀刻装置,其特征在于,所述排气管为Y字形。
12.如权利要求10所述的蚀刻装置,其特征在于,所述排气管由陶瓷材料制成。
13.如权利要求6所述的蚀刻装置,其特征在于,所述晶圆座包含加热器。
14.如权利要求6所述的蚀刻装置,其特征在于,所述真空密封装置由陶瓷材料制成。
15.如权利要求6所述的蚀刻装置,其特征在于,所述真空密封装置为菱形、圆形或半圆形。
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