US20200176232A1 - Etching device and operating method thereof - Google Patents

Etching device and operating method thereof Download PDF

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Publication number
US20200176232A1
US20200176232A1 US16/247,539 US201916247539A US2020176232A1 US 20200176232 A1 US20200176232 A1 US 20200176232A1 US 201916247539 A US201916247539 A US 201916247539A US 2020176232 A1 US2020176232 A1 US 2020176232A1
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Prior art keywords
wafer
vacuum sealing
sealing device
chamber
exhaust pipe
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Abandoned
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US16/247,539
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English (en)
Inventor
Feng-Ju Tsai
Shyue-Ru Doong
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Nanya Technology Corp
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Nanya Technology Corp
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Filing date
Publication date
Application filed by Nanya Technology Corp filed Critical Nanya Technology Corp
Priority to US16/247,539 priority Critical patent/US20200176232A1/en
Priority to TW108110533A priority patent/TWI749309B/zh
Priority to CN201910374392.0A priority patent/CN111276424A/zh
Publication of US20200176232A1 publication Critical patent/US20200176232A1/en
Priority to US17/643,405 priority patent/US20220102120A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B15/00—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/04—Cleaning by suction, with or without auxiliary action
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
    • B08B9/027—Cleaning the internal surfaces; Removal of blockages
    • B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
    • B08B9/0321—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid
    • B08B9/0328—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid by purging the pipe with a gas or a mixture of gas and liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
    • B08B9/027—Cleaning the internal surfaces; Removal of blockages
    • B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
    • B08B9/035—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing by suction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils

Definitions

  • the present disclosure relates to a device and a method for performing an etching process. More particularly, the present disclosure relates to a device and a method of performing a dry etching process, such as photoresist stripping.
  • a dry etching process is generally used to perform photoresist stripping. Moreover, while an operation of transferring a photoresist pattern is performed, the dry (plasma) etching process has an advantage of high accuracy, and thus the plasma etching process is used for processing a large amount of wafers on semiconductor production lines.
  • the plasma etching process often generates a large amount of particles, such as negatively charged by-products generated by chemical mechanisms and attached with electrons due to exposure to the plasma.
  • the negatively charged by-products are suspended above the wafer and are not easily to be removed. Therefore, after the plasma etching process is performed, the suspended negatively charged by-products (particles) drop on the top surface of the wafer, thus causing contamination.
  • a method includes the following steps.
  • a wafer is disposed on a wafer-mounting surface of a wafer holder that is disposed in a chamber.
  • the wafer-mounting surface is in parallel with a gravity direction.
  • a gas is flown from a gas source to vacuum sealing device.
  • An inductive coil wrapping around a vacuum sealing device excites the gas into plasma.
  • the plasma is injected to the wafer.
  • the method further includes performing a purging operation through at least one exhaust pipe connected to the chamber, while the wafer is disposed on the wafer holder.
  • the method further includes following steps.
  • the wafer is removed.
  • a clean operation is performed after the wafer is removed.
  • performing the clean operation further includes following steps.
  • a purging operation is performed through an exhaust pipe connected to a first end and a second end of the vacuum sealing device.
  • a blocking membrane is disposed between the vacuum sealing device and the chamber, such that the vacuum sealing device is separate from the chamber.
  • the exhaust pipe and the vacuum sealing device are made of ceramic materials.
  • a device includes a chamber, a wafer holder, a gas source, a vacuum sealing device, and an inductive coil.
  • the wafer holder is disposed in the chamber.
  • the wafer holder has a wafer-mounting surface in parallel with a gravity direction.
  • the gas source is configured to generate gas.
  • the vacuum sealing device is connected between the gas source and the chamber.
  • the inductive coil is wound around the vacuum sealing device to excite the gas into plasma.
  • the wafer holder has a chuck pin configured to fix a wafer on the wafer-mounting surface of the wafer holder.
  • the wafer holder has an electrostatic chuck configured to fix a wafer on the wafer-mounting surface of the wafer holder.
  • the device further includes at least one exhaust pipe connected to the chamber.
  • the device further includes an exhaust pipe and a blocking membrane.
  • the exhaust pipe is connected to a first end and a second end of the vacuum sealing device.
  • the blocking membrane is disposed between the vacuum sealing device and the chamber.
  • the exhaust pipe is Y-shaped.
  • the exhaust pipe is made of a ceramic material.
  • the wafer holder includes a heater.
  • the vacuum device is made of a ceramic material.
  • the vacuum sealing device is a diamond shape, a round shape, or a semicircular shape.
  • the disclosure provides a method and a device for performing an etching process.
  • the wafer is disposed on the wafer-mounting surface of the wafer holder, and the wafer-mounting surface of the wafer holder is in parallel with a gravity direction, and thus particles may drop on a side surface of the wafer without dropping on a top surface of the wafer. Therefore, the contamination problem on the top surface of the wafer can be resolved, and performance of the wafer can be improved.
  • FIG. 1 is a schematic view of an etching device at one operation state in accordance with one embodiment of the present disclosure.
  • FIG. 2 is a schematic view of the etching device at another operation state in accordance with one embodiment of the present disclosure.
  • FIG. 3 is a schematic view of the etching device performing a clean operation in accordance with one embodiment of the present disclosure.
  • FIG. 4 is a schematic view of the etching device at one operation state in accordance with another embodiment of the present disclosure.
  • FIG. 5 is a schematic view of the etching device at another operation state in accordance with another embodiment of the present disclosure.
  • FIG. 1 is a schematic view of an etching device 10 at one operation state accordance with one embodiment of the present disclosure
  • FIG. 2 is a schematic view of the etching device 10 at another operation state in accordance with one embodiment of the present disclosure.
  • the etching device 10 includes a chamber 100 , a wafer holder 200 , a vacuum sealing device 300 , a gas source 400 , and an inductive coil 500 .
  • the wafer holder 200 is disposed in the chamber 100 .
  • the wafer holder 200 has a wafer-mounting surface 202 in parallel with a gravity direction G.
  • the vacuum sealing device 300 is connected between the chamber 100 and the gas source 400 .
  • the gas source 400 may inject gas, e.g., oxygen, into the vacuum sealing device 300 along a direction D 1 .
  • the inductive coil 500 is wound around the vacuum sealing device 300 to excite the gas into plasma. Then, the plasma is injected into the chamber 100 along a direction D 2 .
  • the inductive coil 500 may be a RF inductive coil. The inductive coil 500 is powered from an RF source to supply sufficient electrical energy into the vacuum sealing device 300 to excite the gas therein into the plasma.
  • the vacuum sealing device 300 may be made of a ceramic material, but the disclosure is not limited thereto. In other embodiments, the vacuum sealing device 300 may be made of another suitable material.
  • the vacuum sealing device 300 may provide two functions. The ceramic material forms a vacuum wall for maintaining the interior of the vacuum sealing device 300 at sufficiently low pressure for forming the plasma.
  • the vacuum sealing device 300 may also act as a dielectric window for allowing RF inductive power to pass from the externally placed inductive coil 500 into the interior of the vacuum sealing device 300 .
  • the vacuum sealing device 300 is a diamond shape. In other embodiments, the vacuum sealing device 300 is a round shape, a semicircular shape, or another suitable shape.
  • the wafer holder 200 has chuck pins 210 .
  • the chuck pins 210 are configured to fix a wafer 204 (as shown in FIG. 2 ) on the wafer-mounting surface 202 of the wafer holder 200 .
  • the chuck pins 210 are arranged on the wafer-mounting surface 202 .
  • Each chuck pin 210 has a first portion 212 and a second portion 214 to clamp the wafer 204 (as shown in FIG. 2 ), and the second portion 214 is pivotally connected to the first portion 212 .
  • FIG. 2 shows another operation state of the wafer 204 fixed on the wafer holder 200 by using the chuck pins 210 , and the etching process is performed.
  • the wafer 204 is directly disposed on the wafer-mounting surface 202 , and a top surface of the wafer 204 is in parallel with the gravity direction G.
  • the second portion 214 moves toward the wafer 204 so as to fix the wafer 204 on the wafer holder 200 .
  • an angle between the first portion 212 and the second portion 214 is an acute angle less than 90 degrees so as to be beneficial to fixing the wafer 204 .
  • a surface of the chuck pin 210 is coated with a material to have better contact with the wafer, in which the material may be such as tantalum, silicon carbide, or another suitable material.
  • the wafer holder 200 further includes a heater 220 for heating the wafer 204 .
  • a power source (not shown) may provide DC power to the heater 220 , and the heater 220 may provide radiant energy to the wafer 204 .
  • the gas source 400 injects the gas into the vacuum sealing device 300 along the direction D 1 .
  • the gas is excited to the plasma.
  • the plasma is injected to the wafer 204 in the chamber 100 along the direction D 2 , in which particles may be generated in the chamber 100 . Since the top surface of the wafer 204 is parallel with the gravity direction G, the particles falling on the top surface of the wafer 204 may drop on the sidewall of the chamber 100 , thereby making the top surface of the wafer 204 free of the particles, thus improving the performance of the wafer 204 .
  • the etching device 10 further includes at least one exhaust pipe 600 connected to the chamber 100 .
  • the exhaust pipes 600 are connected the sidewalls of the chamber 100 .
  • the exhaust pipes 600 may be two or more, but at least one exhaust 600 is disposed near a bottom of the chamber 100 .
  • a purging operation is performed so as to remove the particles.
  • the wafer 204 is disposed on the wafer holder 200 , the particles are removed through the exhaust pipes 600 along a direction D 3 and a direction D 4 .
  • FIG. 3 is a schematic view of an etching device 10 for performing a clean operation in accordance with one embodiment of the present disclosure.
  • the clean operation is performed to prevent the particles from sticking on the surface of the vacuum sealing device 300 .
  • the clean operation may include following steps.
  • the purging operation is performed through an exhaust pipe 610 connected to a first end 302 and a second end 304 of the vacuum sealing device 300 .
  • a blocking membrane 700 is disposed between the vacuum sealing device 300 and the chamber 100 , such that the vacuum sealing device 300 is separated from the chamber 100 .
  • the blocking membrane 700 may restrict the movement of the particles.
  • the particles cannot move from the chamber 100 to the vacuum sealing device 300 , and cannot move from the vacuum sealing device 300 to the chamber 100 as well.
  • the exhaust pipe 610 is Y-shaped, but the disclosure is not limited thereto.
  • the exhaust pipe 610 has a first exhaust pipe 612 , a second exhaust pipe 614 , and the third exhaust pipe 616 .
  • the first end 302 of the vacuum sealing device 300 is connected to the first exhaust pipe 612
  • the second end 304 of the vacuum sealing device 300 is connected to the second exhaust pipe 614 .
  • the gas source 400 provides the gas, e.g., oxygen, or other gases used to remove the particles from the vacuum sealing device 300 .
  • the particles are generated in the chamber 100 , and a portion of the particles may flow into the vacuum sealing device 300 from the chamber 100 .
  • the clean operation is performed so as to remove the residue particles in the vacuum sealing device 300 . Due to the connection between the vacuum sealing device 300 and the exhaust pipe 610 , the particles are removed through the first exhaust pipe 612 and the second exhaust pipe 614 , and then the particles are removed through the third exhaust pipe 616 along a direction D 5 .
  • the exhaust pipe 610 is made of a ceramic material. In other embodiments, the vacuum sealing device 300 and the exhaust pipe 610 are made of same materials, but the disclosure is not limited thereto. For example, the vacuum sealing device 300 and the exhaust pipe 610 are made of the ceramic material which is beneficial for removing the particles. In some embodiments, the exhaust pipe 610 is connected to a negative pressure source which is beneficial to performing the purging operation.
  • FIG. 4 is a schematic view of an etching device 10 a at one operation state in accordance with another embodiment of the present disclosure
  • FIG. 5 is a schematic view of the etching device 10 a at another operation state in accordance with another embodiment of the present disclosure.
  • the etching device 10 a includes the chamber 100 , the wafer holder 200 , the vacuum sealing device 300 , the gas source 400 , and the inductive coil 500 .
  • the wafer holder 200 is disposed in the chamber 100 .
  • the wafer holder 200 has the wafer-mounting surface 202 in parallel with the gravity direction G.
  • FIG. 5 shows another operation state of the wafer 204 fixed on the wafer holder 200 by using an electrostatic chuck 230 , and the etching process is performed.
  • the wafer 204 is directly disposed on the wafer-mounting surface 202 , and the wafer 204 is in parallel with the gravity direction G.
  • the electrostatic chuck 230 may be any appropriate type of electrostatic chuck 230 .
  • the electrostatic chuck 230 may have one or more zones.
  • a power supply unit 800 may be adapted for applying a voltage to a corresponding zone of the electrostatic chuck 230 .
  • the control unit 810 may perform certain control functions.
  • control unit 810 may be adapted for controlling power supply unit 800 to start or to stop applying the voltage to the corresponding zone of the electrostatic chuck 230 . While the control unit 810 controls power supply unit 800 to start applying the voltage to the zone of the electrostatic chuck 230 , the wafer 204 is fixed on the wafer holder 200 .
  • the power supply unit 800 provides a voltage to an electrode (not shown), and the electrode generate Coulomb force or Johnsen-Rahbek force between the wafer 204 and the electrode, such that the wafer 204 can be fixed on the wafer holder 200 by using the electrostatic chuck 230 .
  • the disclosure provides a method and a device for performing an etching process.
  • the wafer is disposed on the wafer-mounting surface of the wafer holder, and the wafer-mounting surface of the wafer holder is in parallel with a gravity direction, and thus particles may drop on a side surface of the wafer without staying on a top surface of the wafer. Therefore, the contamination problem on the top surface of the wafer can be resolved, and performance of the wafer can be improved.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
US16/247,539 2018-12-04 2019-01-14 Etching device and operating method thereof Abandoned US20200176232A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US16/247,539 US20200176232A1 (en) 2018-12-04 2019-01-14 Etching device and operating method thereof
TW108110533A TWI749309B (zh) 2018-12-04 2019-03-26 蝕刻裝置及其操作方法
CN201910374392.0A CN111276424A (zh) 2018-12-04 2019-05-07 蚀刻装置及其操作方法
US17/643,405 US20220102120A1 (en) 2018-12-04 2021-12-08 Operating method of etching device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862775370P 2018-12-04 2018-12-04
US16/247,539 US20200176232A1 (en) 2018-12-04 2019-01-14 Etching device and operating method thereof

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