JP6574737B2 - 整合器及びプラズマ処理装置 - Google Patents
整合器及びプラズマ処理装置 Download PDFInfo
- Publication number
- JP6574737B2 JP6574737B2 JP2016109001A JP2016109001A JP6574737B2 JP 6574737 B2 JP6574737 B2 JP 6574737B2 JP 2016109001 A JP2016109001 A JP 2016109001A JP 2016109001 A JP2016109001 A JP 2016109001A JP 6574737 B2 JP6574737 B2 JP 6574737B2
- Authority
- JP
- Japan
- Prior art keywords
- diode
- diodes
- series
- capacitor
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 title claims description 39
- 239000003990 capacitor Substances 0.000 claims description 110
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/28—Impedance matching networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Description
VR>VDC+VP …(1)
なお、プラズマ処理装置10の整合器において利用されるダイオードは、例えば1000V以上の逆方向耐電圧VRを有することが望ましい。
Claims (7)
- プラズマ処理装置のインピーダンス整合のための整合器であって、
可変容量を有する第1のダイオードを含み、高周波の入力端と高周波の出力端との間に設けられた直列部と、
可変容量を有する第2のダイオードを含み、前記入力端と前記出力端との間のノードとグランドとの間に設けられた並列部と、
前記第1のダイオード及び前記第2のダイオードのそれぞれに逆バイアス電圧を印加するように設けられた可変直流電源である複数の直流電源と、
を備え、
前記直列部は、前記第1のダイオードに直列接続された第1のコンデンサを更に含み、
前記並列部は、前記第2のダイオードに直列接続された第2のコンデンサを更に含み、
前記第1のコンデンサは、前記ノードと前記第1のダイオードとの間において接続されており、
前記第2のコンデンサは、前記グランドと前記第2のダイオードとの間に接続されており、
前記直列部は、
各々が可変容量を有するダイオードであり、前記第1のダイオードを含む複数の第1のダイオードであって、前記第1のコンデンサに対して前記出力端の側に設けられた、該複数の第1のダイオードと、
前記第1のコンデンサを含む複数の第1のコンデンサと、
を含み、
各々が、前記複数の第1のダイオードのうち一つの第1のダイオード、及び、前記複数の第1のコンデンサのうち前記一つの第1のダイオードに直列接続された一つの第1のコンデンサを含む複数の第1の素子群が、前記入力端と前記出力端との間で順に接続されており、
前記複数の直流電源のうち一つの直流電源は、前記複数の第1のダイオードに逆バイアス電圧を印加するように設けられている、
整合器。 - 前記複数の第1のダイオードのうち直列接続されている二つの第1のダイオードの間には、前記複数の第1のコンデンサのうち一つの第1のコンデンサが設けられている、請求項1に記載の整合器。
- 前記複数の第1のダイオードのうち逆直列で接続されている二つの第1のダイオードは直結されている、請求項1又は2に記載の整合器。
- 前記並列部は、
各々が可変容量を有するダイオードであり、前記第2のダイオードを含む複数の第2のダイオードであって、前記第2のコンデンサに対して前記ノードの側に設けられた、該複数の第2のダイオードと、
前記第2のコンデンサを含む複数の第2のコンデンサと、
を含み、
各々が、前記複数の第2のダイオードのうち一つの第2のダイオード、及び、前記複数の第2のコンデンサのうち前記一つの第2のダイオードに直列接続された一つの第2のコンデンサを含む複数の第2の素子群が、前記ノードと前記グランドとの間で順に接続されており、
前記複数の直流電源のうち別の一つの直流電源は、前記複数の第2のダイオードに逆バイアス電圧を印加するように設けられている、
請求項1〜3の何れか一項に記載の整合器。 - 前記複数の第2のダイオードのうち直列接続されている二つの第2のダイオードの間には、前記複数の第2のコンデンサのうち一つの第2のコンデンサが設けられている、請求項4に記載の整合器。
- 前記複数の第2のダイオードのうち逆直列に接続されている二つの第2のダイオードは直結されている、請求項4又は5に記載の整合器。
- チャンバを提供するチャンバ本体と、
高周波電源と、
前記チャンバ内でのプラズマの生成又はバイアスの生成のための電極であり、前記高周波電源に電気的に接続された電極と、
請求項1〜6の何れか一項に記載の整合器であって、前記高周波電源と前記電極の間に接続された、該整合器と、
を備えるプラズマ処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016109001A JP6574737B2 (ja) | 2016-05-31 | 2016-05-31 | 整合器及びプラズマ処理装置 |
CN201780032809.4A CN109196960B (zh) | 2016-05-31 | 2017-05-17 | 匹配器及等离子体处理装置 |
KR1020187037610A KR102345906B1 (ko) | 2016-05-31 | 2017-05-17 | 정합기 및 플라즈마 처리 장치 |
US16/304,370 US10727028B2 (en) | 2016-05-31 | 2017-05-17 | Matching device and plasma processing apparatus |
PCT/JP2017/018458 WO2017208815A1 (ja) | 2016-05-31 | 2017-05-17 | 整合器及びプラズマ処理装置 |
TW106117323A TWI751166B (zh) | 2016-05-31 | 2017-05-25 | 匹配器及電漿處理裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016109001A JP6574737B2 (ja) | 2016-05-31 | 2016-05-31 | 整合器及びプラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017216135A JP2017216135A (ja) | 2017-12-07 |
JP6574737B2 true JP6574737B2 (ja) | 2019-09-11 |
Family
ID=60478552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016109001A Active JP6574737B2 (ja) | 2016-05-31 | 2016-05-31 | 整合器及びプラズマ処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10727028B2 (ja) |
JP (1) | JP6574737B2 (ja) |
KR (1) | KR102345906B1 (ja) |
CN (1) | CN109196960B (ja) |
TW (1) | TWI751166B (ja) |
WO (1) | WO2017208815A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10892140B2 (en) * | 2018-07-27 | 2021-01-12 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
EP3496272B1 (en) * | 2017-12-08 | 2021-10-20 | Nxp B.V. | A matching circuit |
JP7245249B2 (ja) * | 2018-01-11 | 2023-03-23 | エーイーエス グローバル ホールディングス, プライベート リミテッド | 低出力pinダイオードドライバ |
US10991591B2 (en) * | 2018-01-29 | 2021-04-27 | Ulvac, Inc. | Reactive ion etching apparatus |
US20200176232A1 (en) * | 2018-12-04 | 2020-06-04 | Nanya Technology Corporation | Etching device and operating method thereof |
JP2022080674A (ja) * | 2020-11-18 | 2022-05-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11749505B2 (en) * | 2021-02-23 | 2023-09-05 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
US11538663B2 (en) * | 2021-02-23 | 2022-12-27 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
KR20230026567A (ko) * | 2021-08-17 | 2023-02-27 | 전북대학교산학협력단 | 전기식 가변 커패시터 회로 및 이를 포함하는 반도체 공정 시스템 |
KR20230101960A (ko) * | 2021-12-29 | 2023-07-07 | 전북대학교산학협력단 | 전기식 가변 커패시터 회로 및 이를 포함하는 반도체 공정 시스템 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06296118A (ja) * | 1993-04-09 | 1994-10-21 | Fujitsu Ltd | 電力増幅器 |
TW525213B (en) * | 2000-02-16 | 2003-03-21 | Hitachi Ltd | Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units |
US6887339B1 (en) | 2000-09-20 | 2005-05-03 | Applied Science And Technology, Inc. | RF power supply with integrated matching network |
JP2003318689A (ja) * | 2002-04-23 | 2003-11-07 | Kanazawa Inst Of Technology | 整合回路および反射波検出回路 |
US6657421B1 (en) | 2002-06-28 | 2003-12-02 | Motorola, Inc. | Voltage variable capacitor with improved C-V linearity |
CN101197580B (zh) * | 2006-12-06 | 2011-06-08 | 联想移动通信科技有限公司 | 一种阻抗匹配处理装置及阻抗匹配处理方法 |
JP5412034B2 (ja) | 2006-12-26 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR20100049761A (ko) * | 2008-11-04 | 2010-05-13 | 엘지전자 주식회사 | 플라즈마 디스플레이 장치 |
JP5485408B2 (ja) * | 2009-11-09 | 2014-05-07 | エプコス アクチエンゲゼルシャフト | インピーダンス回路および信号変換のための方法 |
GB201021032D0 (en) | 2010-12-10 | 2011-01-26 | Creo Medical Ltd | Electrosurgical apparatus |
US8416008B2 (en) * | 2011-01-20 | 2013-04-09 | Advanced Energy Industries, Inc. | Impedance-matching network using BJT switches in variable-reactance circuits |
US9129776B2 (en) * | 2012-11-01 | 2015-09-08 | Advanced Energy Industries, Inc. | Differing boost voltages applied to two or more anodeless electrodes for plasma processing |
US9196459B2 (en) * | 2014-01-10 | 2015-11-24 | Reno Technologies, Inc. | RF impedance matching network |
-
2016
- 2016-05-31 JP JP2016109001A patent/JP6574737B2/ja active Active
-
2017
- 2017-05-17 US US16/304,370 patent/US10727028B2/en active Active
- 2017-05-17 KR KR1020187037610A patent/KR102345906B1/ko active IP Right Grant
- 2017-05-17 WO PCT/JP2017/018458 patent/WO2017208815A1/ja active Application Filing
- 2017-05-17 CN CN201780032809.4A patent/CN109196960B/zh active Active
- 2017-05-25 TW TW106117323A patent/TWI751166B/zh active
Also Published As
Publication number | Publication date |
---|---|
US10727028B2 (en) | 2020-07-28 |
JP2017216135A (ja) | 2017-12-07 |
WO2017208815A1 (ja) | 2017-12-07 |
TWI751166B (zh) | 2022-01-01 |
KR20190011776A (ko) | 2019-02-07 |
CN109196960B (zh) | 2021-02-02 |
CN109196960A (zh) | 2019-01-11 |
TW201811123A (zh) | 2018-03-16 |
KR102345906B1 (ko) | 2022-01-03 |
US20190180986A1 (en) | 2019-06-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6574737B2 (ja) | 整合器及びプラズマ処理装置 | |
JP7271330B2 (ja) | 載置台及びプラズマ処理装置 | |
US11935729B2 (en) | Substrate support and plasma processing apparatus | |
US20220108878A1 (en) | Plasma processing apparatus and plasma processing method | |
US11923171B2 (en) | Plasma processing apparatus and plasma processing method | |
JP2024086851A (ja) | プラズマ処理装置 | |
US12020899B2 (en) | Plasma processing apparatus and plasma processing method | |
US20210296093A1 (en) | Plasma processing apparatus | |
JP7101055B2 (ja) | 静電チャック、フォーカスリング、支持台、プラズマ処理装置、及びプラズマ処理方法 | |
JP2020202198A (ja) | 静電チャック、支持台及びプラズマ処理装置 | |
KR20240113731A (ko) | 기판 지지기 및 플라즈마 처리 장치 | |
JP2021015930A (ja) | プラズマ処理方法及びプラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180906 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190521 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190711 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190723 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190819 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6574737 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |