CN106591801B - 利用peald在凹槽中沉积介电膜的方法 - Google Patents
利用peald在凹槽中沉积介电膜的方法 Download PDFInfo
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- CN106591801B CN106591801B CN201610898822.5A CN201610898822A CN106591801B CN 106591801 B CN106591801 B CN 106591801B CN 201610898822 A CN201610898822 A CN 201610898822A CN 106591801 B CN106591801 B CN 106591801B
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000000151 deposition Methods 0.000 title claims abstract description 27
- 238000001039 wet etching Methods 0.000 claims abstract description 45
- 238000006243 chemical reaction Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000002243 precursor Substances 0.000 claims abstract description 34
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 7
- 150000004696 coordination complex Chemical class 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 35
- 230000008021 deposition Effects 0.000 description 14
- 239000012159 carrier gas Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000000376 reactant Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- -1 germanium Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/28008—Making conductor-insulator-semiconductor electrodes
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- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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Abstract
一种利用等离子体增强原子层沉积(PEALD)在凹槽中沉积介电膜的方法,其包括:在一定条件下利用PEALD将介电膜沉积在基材的凹槽中,且加入反应空间中的前体具有作为官能团的‑N(CH3)2,所述条件为所述基材的顶部表面上的沉积膜的湿法蚀刻速率基本上等于或高于所述凹槽侧壁上的沉积膜的湿法蚀刻速率。
Description
背景技术
发明领域
本发明总体上涉及一种利用等离子体增强原子层沉积(PEALD)在基材的凹槽中沉积介电膜的方法。
相关领域描述
在PEALD中,由于基材的凹槽的侧壁比基材的顶部表面经受更少的离子轰击,侧壁上的表面反应活性低于顶部表面上的反应,从而导致了侧壁上的膜的蚀刻速率不同于(高于)顶部表面上的膜的蚀刻速率这样的问题。
通常,通过提高处理温度等方法来改善沉积在侧壁上的介电膜的品质(例如密度、硬度),以降低侧壁上的蚀刻速率。然而,这种改善是局部的,且侧壁与顶部表面之间蚀刻速率存在差异的问题并未得到充分解决。
本发明中包括的与背景技术相关的任何问题的讨论和方案仅用于为本发明提供背景的目的,不应作为对发明本发明时已知的任何或所有讨论的认同。
发明内容
在本发明的一些实施方式中,通过降低基材顶部表面的介电膜的品质来代替改善基材的凹槽侧壁上的介电膜的品质的做法,从而使侧壁上的膜的蚀刻速率与顶部表面上的膜的蚀刻速率基本匹配。
一些实施方式提供了一种使基材的凹槽侧壁上的膜的品质与基材的顶部表面上的膜的品质基本相同的方法,所述方法使用具有-N(CH3)2作为官能团的前体来控制利用PEALD在具有凹槽的基材上沉积介电膜的处理中的诸如RF功率这样的处理参数。在一些实施方式中,通过增加RF功率来提高顶部表面上的膜的蚀刻速率,通过降低沉积在顶部表面上的膜的品质来缩小侧壁的蚀刻速率与顶部表面的蚀刻速率之间的差异。在一些实施方式中,通过控制沉积过程来增加顶部表面上的膜中杂质(例如氮)的量。膜的蚀刻速率与膜中杂质的量有关,且通过增加杂质的量,能够提高蚀刻速率。可通过例如调整RF功率来控制杂质的量。通过控制沉积过程,使侧壁上的膜中杂质的量与顶部表面上的膜中杂质的量基本上相等,从而缩小了侧壁的蚀刻速率与顶部表面的蚀刻速率之间的差异。
出于总结本发明各方面和相对于背景技术所取得的益处的目的,在本文中描述本发明的某些目标和益处。当然,应理解本发明的任意具体实施方式不必然能实现所有的这些目的或优点。因此,例如本领域普通技术人员将理解可以下述方式实施或进行本发明:取得或优化本文所教导的一种或更多种优点,而不必然取得本文所可能教导或暗示的其它目的或优点。
本发明的其它方面、特征和优点会在以下详细说明中变得显而易见。
附图的简要说明
现结合优选的实施方式的附图说明本发明的这些或其它特征,这旨在说明本发明而不是限制本发明。为了说明目的,附图被大大简化并且不一定按比例绘制。
图1A是可用于本发明的一种实施方式中的用于沉积介电膜的PEALD(等离子体增强原子层沉积)设备。
图1B图示了可用于本发明的一种实施方式中的使用流动-通过***(FPS)的前体供给***的示意图。
图2图示了本发明的一种实施方式的PEALD处理流程。
图3A是显示本发明的一种实施方式的膜的N浓度与用于膜沉积的RF功率之间关系的图表。
图3B是显示本发明的一种实施方式的沉积的膜的湿法蚀刻速率相对于氧化物膜的湿法蚀刻速率的比值与用于膜沉积的RF功率之间关系的图表。
图4是显示本发明的一种实施方式的沉积在侧壁上的膜的湿法蚀刻速率(任意单位)相对于热氧化物膜的湿法蚀刻速率的比值与用于膜沉积的RF功率之间关系、以及沉积在顶部表面上的膜的湿法蚀刻速率(任意单位)相对于热氧化物膜的湿法蚀刻速率的比值与用于膜沉积的RF功率之间关系的图表。
图5显示了按照一个比较例形成的共形(conformal)介电膜的截面的扫描透射电子显微镜(STEM)照片,其中,(a)显示了刚沉积时的膜,而(b)显示了湿法蚀刻后的膜。
图6显示了按照本发明的一种实施方式形成的共形介电膜的截面的扫描透射电子显微镜(STEM)照片,其中,(a)显示了刚沉积时的膜,而(b)显示了湿法蚀刻后的膜。
具体实施方式
本文中,“气体”可包括蒸发的固体和/或液体并可由单一气体或气体混合物构成。类似地,冠词“一个”或“一种”表示一个种类或包括多个种类的大类。本文中,通过喷淋头被引入反应腔室中的处理气可包含前体和反应气体,或(基本上)由前体气体和反应气体组成。反应气体包括用于在向反应气体施加RF功率时使前体氧化的气体。如果反应气体在无RF功率的条件下不与前体发生反应,则可向反应空间持续引入反应气体。可使用诸如稀有气体这样的载气来引入前体。可使用除了处理气体之外的气体,即不通过喷淋头引入的气体来例如密封反应空间,所述除了处理气体之外的气体包括密封气体,例如稀有气体。在一些实施方式中,“膜”是指基本没有针孔的,在垂直于厚度方向的方向上连续延伸以覆盖整个目标物或相关表面的层,或简单来说是覆盖目标物或相关表面的层。膜可由具有某些特征的离散的单一膜或层或多个膜或层构成,相邻膜或层之间的边界可清晰或不清晰并且所述边界可根据相邻膜或层的物理、化学、和/或任何其它特征、形成方法或流程、和/或功能或目的建立。另外,在本文中,当可行范围可根据常规作业决定时,变量的任意两个数字可构成该变量的可行范围,并且任何显示的范围可包括或排除端点。另外,在一些实施方式中,表示的变量的任何值(无论它们是否与“约”一起出现)可指精确值或近似值并包括等效值,可指均值、中值、代表值、大多数等。在一些实施方式中,术语“由……构成”和“具有”独立地指“通常或广泛地包含”、“包含”、“基本由……组成”或“由……组成”。
在本发明中,当没有说明条件和/或结构时,本领域技术人员可从本发明的角度出发,通过试验容易地提供所述条件和/或结构。
在所有公开的实施方式中,出于预计的目的,实施方式中使用的任何元素可用与其等效的任何元素替代,包括本文明确地、必需地或固有地公开的那些。另外,本发明可等同地应用于设备和方法。
在本文中,任何限定的含义并不必需排除在一些实施方式中的普通和自定义的含义。
在一些实施方式中,术语“前体”通常是指参与生成另一种化合物的化学反应的化合物,尤其是指构成膜基质或膜的主要骨架的化合物,而术语“反应物”是指使前体活化、对前体进行改性或对前体的反应进行催化的化合物。
介电膜包括但不限于具有约10~约100、优选约为50~约60的介电常数的金属氧化物膜,例如氧化钛或多元素材料等。在一些实施方式中,利用等离子体增强ALD或其它等离子辅助循环沉积法在凹槽、通孔、或包含侧壁和底部表面的其它凹陷(都称为“凹槽”)中形成介电膜。凹槽可具有约10nm~约1000nm、优选约为100nm~约500nm的深度和约1~约10、优选约为2~约3的纵横比。沉积的介电膜的厚度可在约2nm~约500nm、优选约为10nm~约100nm、更优选约为15nm~约30nm的范围内(所需的膜厚度可根据膜的应用和目的等适当选择)。
借助优选的实施方式来解释这些实施方式。然而,本发明不局限于这些优选的实施方式。
在一种实施方式中,一种利用等离子体增强原子层沉积(PEALD)在凹槽中沉积介电膜的方法包括:(i)确定向反应空间施加的RF功率与沉积在凹槽侧壁上的一部分膜的湿法蚀刻速率之间的第一关系,在所述反应空间中,介电膜通过PEALD被沉积在基材的凹槽中,并且确定RF功率与沉积在所述基材的顶部表面上的一部分膜的湿法蚀刻速率之间的第二关系,其中,加入所述反应空间中的前体具有作为官能团的-N(CH3)2;(ii)确定与沉积在所述凹槽的所述侧壁上的那部分膜的第一湿法蚀刻速率和沉积在所述基材的所述顶部表面上的那部分膜的第二湿法蚀刻速率相对应的RF功率,其中,根据步骤(i)中的所述第一和第二关系,所述第二湿法蚀刻速率基本上等于或高于所述第一湿法蚀刻速率;以及(iii)在与用于所述第一和第二关系中的条件等价的条件下,利用PEALD将介电膜沉积在基材的凹槽中,其中,RF功率是步骤(ii)中确定的功率。
本发明中,“基本上等于”、“基本上等价”等是指一些实施方式中的本领域技术人员能够认识到的非实质性差异或那些小于10%、小于5%、小于1%或它们之间任意范围内的差异(优选差异为±5%)。并且在本发明中,“显著大于(高于)”、“本质上不同”等是指一些实施方式中的本领域技术人员能够认识到的实质性差异或那些至少为5%、10%、20%、30%、40%、50%、60%、70%、80%或它们之间任意范围内的差异。
在一些实施方式中,沉积在基材顶部表面上的膜的湿法蚀刻速率随着用于沉积该膜的RF功率而变化,且当使用具有-N(CH3)2作为官能团的前体时,该膜的湿法蚀刻速率随着RF功率的升高而以具有顶点的向下抛物线形式变化。也就是说,当RF功率相对较弱时,湿法蚀刻速率随RF功率的升高而降低,即,沉积膜的品质得到改善。然而,当RF功率进一步升高时,更多的等离子体到达顶部表面,且杂质浓度也开始升高。通常,湿法蚀刻速率的变化与杂质浓度的变化有关。其结果是,湿法蚀刻速率在到达最小值(最低点)后开始升高。在最低点处得到的顶部表面上的膜的品质似乎是最高的。然而,当顶部表面上的膜的品质在最低点处最高时,侧壁上的膜的品质并不高,即,侧壁上的膜的湿法蚀刻速率相对较高。因为等离子体无法轻易地到达侧壁,与顶部表面上的膜的品质相比,侧壁上的膜的品质并不会显著地受到RF功率强度的影响。在一些实施方式中,侧壁上的膜的湿法蚀刻速率会随着RF功率的升高而逐渐降低。所以,虽然当RF功率相对较低时,侧壁上的膜的湿法蚀刻速率高于顶部表面上的膜的湿法蚀刻速率,但随着RF功率的升高,在顶部表面上的膜的湿法蚀刻速率的最低点之后的某个点处,顶部表面上的膜的湿法蚀刻速率与侧壁上的膜的湿法蚀刻速率变得基本上相等,因为顶部表面上的膜的湿法蚀刻速率持续升高,而侧壁上的膜的湿法蚀刻速率逐渐降低(表示顶部表面上的膜的湿法蚀刻速率与RF功率之间关系的线与表示侧壁上的膜的湿法蚀刻速率与RF功率之间关系的线相交)。
在一些实施方式中,仅通过调整用于沉积膜的RF功率(其它处理参数不变),就可使第二湿法蚀刻速率(即,沉积在顶部表面上的膜的湿法蚀刻速率)呈现为基本上等于或高于第一湿法蚀刻速率(即,沉积在侧壁上的膜的湿法蚀刻速率),以使膜在湿法蚀刻后的共形性(conformality)能够得到改善。在一些实施方式中,膜在湿法蚀刻后的共形性在约90%~约110%的范围内,理想地约为95%~约100%。共形性定义为基材凹槽侧壁(或底部表面)上的膜的厚度与基材顶部表面上的膜的厚度的比例。根据沉积在基材上的膜的共形性来选择第一湿法蚀刻速率。如果共形性约为100%,则第一和第二湿法蚀刻速率可基本上相等,使得膜在湿法蚀刻后的共形性能够保持在约100%。在一些实施方式中,沉积的膜的共形性在约80%~约100%的范围内。通常,湿法蚀刻后的共形性比沉积后的膜的共形性低约5%~约10%。相反,在本发明的一些实施方式中,湿法蚀刻后的共形性比沉积后的膜的共形性高约5%~约15%(通常为10%左右)。在一些实施方式中,上述共形性的改善是通过降低基材顶部表面上的膜的品质来实现的,而不是通过改善基材凹槽侧壁上的膜的品质来实现。
在一些实施方式中,前体为二甲基酰胺基金属络合物。在一些实施方式中,金属络合物中的金属为钛。可使用其它金属,例如锗。在一些实施方式中,前体是选自四(二甲基酰胺基)钛、四(二甲基酰胺基)锗中的一种或多种化合物。
在一些实施方式中,用于步骤(iii)(即,RF功率确定步骤)中的RF功率相对于基材的单位面积在约0.02W/cm3~约1.4W/cm3、优选约为0.07W/cm3~约0.7W/cm3、更优选在0.3W/cm3~约0.4W/cm3的范围内。
本发明中,通过在以下表1中所示的条件下对膜进行湿法蚀刻来对湿法蚀刻速率进行评价:
表1
上文中,测量步骤如下所述:(1)将沉积有膜的基材切割成尺寸为5×5cm的块;(2)利用椭圆光度测量法测量膜的厚度;(3)将基材块浸没在氢氟酸浓度为1:100的溶液中5分钟;(4)使用纯水彻底清洗基材块,并且用吹风机使其干燥;以及(5)利用椭圆光度测量法测量膜的厚度,并且计算湿法蚀刻速率,所述湿法蚀刻速率定义为步骤(2)中测得的厚度与步骤(5)中测得的厚度的差异与步骤(2)中测得的膜厚度的比值。同时,对沉积有热氧化物膜(TOX)的基材进行与上述步骤相同的处理,并且计算膜的湿法蚀刻速率与TOX的湿法蚀刻速率的比值。
在一些实施方式中,由于湿法蚀刻速率的快慢与膜中杂质的浓度有关,该方法可基于如下所述的杂质浓度来进行:(a)在第一条件下沉积膜,并且测量顶部表面(T1)和侧壁(S1)上的膜的杂质浓度,其中,T1<S1;(b)在第二条件下(诸如RF功率这样的处理参数相对于第一条件发生变化(例如RF功率升高))沉积膜,并且测量顶部表面(T2)和侧壁(S2)上的膜的杂质浓度,其中,T1<T2且S1>S2;以及(c)反复进行步骤(b)直至确定T2≈S2的最佳条件(“≈”表示基本上相等)。
在一些实施方式中,在如以下表2中所示的条件下,利用PEALD来沉积膜:
表2
图2图示了本发明的一种实施方式的PEALD处理流程。在本文中,每个柱的宽度并不必然表示实际的时间长度,每行中线条的上升水平线表示开启状态,其中每行中线条的底部的水平线表示关闭状态。沉积循环依次包括向反应区域供给前体、吹扫反应区域、向反应区域施加RF功率以及吹扫反应区域的步骤,其中,在整个沉积循环步骤中持续向反应区域供给吹扫气体/载气,并且在整个沉积循环步骤中持续向反应区域供给用于沉积的反应气体。在沉积循环中,根据目标膜厚和目标组成以及膜的品质,供给前体、吹扫反应区域、向反应区域施加RF功率以及吹扫反应区域的步骤可重复p次(p是150~350、优选为250~300的整数),但是重复并不是必需的。
本文中,词语“持续地”是指以下中的至少一种:根据实施方式,作为原位过程时,不破坏真空、不暴露于空气中、不打开腔室,作为顺次步骤时不被打断,并且不改变主要的处理条件。在一些实施方式中,辅助步骤,例如步骤之间的延缓或其它不重要的或非实质性的步骤在本文中并未被作为步骤描述在内,因此词语“持续地”并不排除中间的辅助步骤。
在图2所示的流程中,使用持续供给的载气以脉冲方式供给前体。这可通过使用流动-通过***(FPS)来完成,其中,提供含有具有前体储器(瓶)的迂回管线的载气管线,主管线和迂回管线可进行切换,其中,当希望只将载气输送至反应腔室时,关闭迂回管线,而当有意将载气和前体气体都输送至反应腔室时,关闭主管线,载气流动通过迂回管线并且与前体气体一起从瓶中流出。以这种方式,载气可持续流入反应腔室中,并可通过切换主管线和迂回管线使载气以脉冲方式携带前体气体。图1B图示了根据本发明的一种实施方式的使用流动-通过***(FPS)的前体供给***(黑色阀表示该阀是关闭的)。如图1B中的(a)所示,当向反应腔室(未显示)输送前体时,首先,诸如Ar(或He)这样的载气流过具有阀b和c的气体管线,随后进入瓶(储器)20中。载气从瓶20流出的同时携带了与在瓶20内部蒸气压相对应的量的前体气体,并且流过具有阀f和e的气体管线,随后与前体一起被输送至反应腔室中。上文中,阀a和d是关闭的。当只向反应腔室输送载气(稀有气体)时,如图1B中的(b)所示,载气流过具有阀a的气体管线,同时绕过瓶20。在上述情况中,阀b、c、e和f是关闭的。
可在载气的协助下提供前体。由于ALD是自限制的吸附反应过程,沉积的前体分子的数量由反应性表面位点的数量决定,且不受饱和后的前体暴露的影响,并且前体的供应使得反应性表面位点在每个循环中都是饱和的。用于沉积的等离子体可原位形成,例如,在整个沉积循环中持续流动的氨气中形成。在另一些实施方式中,等离子体可远程形成并被提供至反应腔室中。
如上所述,每个沉积循环中的各脉冲或阶段优选都是自限制的。在各阶段中供给过量的反应物以使易受影响的结构表面饱和。表面的饱和确保了反应物占据所有可用的反应性位点(受制于例如物理尺寸或“空间位阻”的限制),从而确保优异的阶差覆盖。在一些实施方式中,可减少一种或多种反应物的脉冲时间,不实现完全饱和,并且吸附至基材表面上的物质不足以形成单层。
处理循环可使用任何合适的设备进行,包括例如图1A中所示的设备。图1A是可用于本发明的一些实施方式中的PEALD设备的示意图,理想地与程序化的控制相连以进行下述流程。在该图中,通过提供一对平行放置且在反应腔室3的内腔11(反应区域)中相对的导电平板电极4、2,并且对一侧施加HRF功率(13.56MHz或27MHz)20并将另一侧12电接地,在电极之间激发等离子体。在较低平台2(下电极)提供温度调节器,将设置于其上的基材1的温度以给定的温度保持恒定。上电极4也用作喷淋板,分别通过气体管线21和气体管线22并通过喷淋板4将反应气体(和稀有气体)和前体气体引入反应腔室3中。另外,在反应腔室3中,提供具有排气管线7的环状输送管13,反应腔室3的内腔11中的气体通过环状输送管13排出。此外,设置在反应腔室3下方的转移腔室5具有密封气体管线24以通过转移腔室5的内腔16(转移区域)将密封气体引入到反应腔室3的内腔11中,其中,提供用于分隔反应区域和转移区域的分隔板14(该图中省略了闸门阀,通过该闸门阀可将晶片转入或转出转移腔室5)。转移腔室还具有排气管线6。在一些实施方式中,多元素膜的沉积和表面处理在同一反应空间内进行,从而所有步骤可持续进行而不需要将基材暴露于空气或其它含氧气氛中。在一些实施方式中,远程等离子体单元可用于激发气体。
在一些实施方式中,在图1A所示的设备中,图1B中图示的惰性气体流和前体气体流的切换***(之前描述过)可用于以脉冲方式引入前体气体而不使反应腔室的压力发生明显的波动。
在一些实施方式中,可使用双腔室反应器(相互之间紧密设置的用于处理晶片的两个部分或隔室),其中反应气体和稀有气体可通过共用的管线供应,而前体气体通过非共用的管线供应。
本领域技术人员应理解,所述设备包括一个或多个程序化的控制器(未显示)或者以其他方式设置成能进行本文其它部分所述的沉积和反应器清洁处理。本领域技术人员应理解,所述控制器与各种动力源、加热***、泵、机器人和气流控制器或反应器的阀连接。
参考以下工作实施例对本发明做进一步解释。然而,这些实施例并非旨在限制本发明。在实施例中,当没有说明条件和/或结构时,本领域技术人员可从本发明的角度出发,按常规试验容易地提供所述条件和/或结构。而且,在一些实施方式中,具体实施例中所用的数字可在至少±50%的范围内修改,并且所述数字是近似值。
实施例
实施例1
在如下述表3所示的条件下,使用图2所示的流程和图1A和1B所示的PEALD设备在具有图案化的表面的300nm基材上形成氧化钛膜,所述图案化的表面具有约2的纵横比和约320nm的开口深度。
表3
对沉积在基材顶部表面上的那部分膜的每一个的湿法蚀刻速率进行测量。结果示于表3B,其中,湿法蚀刻速率以WERR/[TOX]表示,即,所述膜的湿法蚀刻速率与热氧化物膜的湿法蚀刻速率的比值。如图3B所示,所述膜的湿法蚀刻速率随着RF功率的升高而沿着具有顶点的向下抛物线变化。也就是说,当RF功率相对较弱时,湿法蚀刻速率随RF功率的升高而降低,即,沉积膜的品质得到改善。湿法蚀刻速率在到达最小值(最低点)后开始升高。在最低点处得到的顶部表面上的膜的品质似乎是最高的,之后,湿法蚀刻速率随着RF功率的升高而升高,降低了沉积在顶部表面上的膜的品质。还测量了一些的膜的氮浓度,结果示于图3A。湿法蚀刻速率的变化通常与杂质浓度的变化有关。
实施例2
在与实施例1相同的条件下沉积膜,并且不仅测量了顶部表面上的各个膜的湿法蚀刻速率,还测量了侧壁上的各个膜的湿法蚀刻速率。结果示于图4。如图3B所示,湿法蚀刻速率在到达最小值(最低点)之后开始升高,而图4显示了最低点之后的湿法蚀刻速率。在最低点处得到的顶部表面上的膜的品质似乎是最高的。虽然顶部表面上的膜的品质在最低点处最高,但侧壁上的膜的品质并不高,即,侧壁上的膜的湿法蚀刻速率相对较高。因为等离子体无法轻易地到达侧壁,与顶部表面上的膜的品质相比,侧壁上的膜的品质并不会显著地受到RF功率强度的影响。如图4所示,侧壁上的膜的湿法蚀刻速率随着RF功率的升高而逐渐降低。所以,虽然当RF功率相对较低时,侧壁上的膜的湿法蚀刻速率高于顶部表面上的膜的湿法蚀刻速率,但随着RF功率的升高,在顶部表面上的膜的湿法蚀刻速率的最低点之后的某个点处,顶部表面上的膜的湿法蚀刻速率变得与侧壁上的膜的湿法蚀刻速率基本上相等,因为如图4所示,顶部表面上的膜的湿法蚀刻速率持续升高,而侧壁上的膜的湿法蚀刻速率逐渐降低。也就是说,表示顶部表面上的膜的湿法蚀刻速率与RF功率之间关系的线条与表示侧壁上的膜的湿法蚀刻速率与RF功率之间关系的线条在约500W处相交。
实施例3
利用扫描透射电子显微镜(STEM)对RF功率为200W条件下沉积在凹槽中的膜进行了分析。图5显示了所述膜的截面的STEM照片,其中,(a)显示了刚沉积时的膜,而(b)显示了湿法蚀刻后的膜。如图5所示,上侧壁上的刚沉积时的膜的共形性为89%,下侧壁上的为96%,底部上的为97%,而上侧壁上的湿法蚀刻后的膜的共形性为83%,下侧壁上的为90%,底部上的为89%,即,膜的共形性在湿法蚀刻后降低了约6%~约8%。
还利用扫描透射电子显微镜(STEM)对RF功率为500W条件下沉积在凹槽中的膜进行了分析。图6显示了所述膜的截面的STEM照片,其中,(a)显示了刚沉积时的膜,而(b)显示了湿法蚀刻后的膜。如图6所示,上侧壁上的刚沉积时的膜的共形性为83%,下侧壁上的为89%,底部上的为90%,而上侧壁上的湿法蚀刻后的膜的共形性为93%,下侧壁上的为100%,底部上的为99%,即,膜的共形性在湿法蚀刻后升高了约10%~约12%。如上所述,通过利用升高RF功率(这里,RF功率为500W时的湿法蚀刻之后的厚度比RF功率为200W时的湿法蚀刻之后的厚度减小得更多)降低顶部表面上的膜的品质,成功地改善了湿法蚀刻之后的膜的共形性。
本领域技术人员应理解,可进行大量和各种改进而不背离本发明的精神。因此,应清楚地理解,本发明的形式仅用于说明而不是为了限制本发明的范围。
Claims (10)
1.一种利用等离子体增强原子层沉积(PEALD)在凹槽中沉积介电膜的方法,其包括:
(i)确定向反应空间施加的RF功率与沉积在所述凹槽侧壁上的一部分膜的湿法蚀刻速率之间的第一关系,在所述反应空间中,介电膜通过PEALD被沉积在基材的凹槽中,并且确定RF功率与沉积在所述基材的顶部表面上的一部分膜的湿法蚀刻速率之间的第二关系,其中,加入所述反应空间中的前体具有作为官能团的-N(CH3)2;
(ii)确定与沉积在所述凹槽的所述侧壁上的那部分膜的第一湿法蚀刻速率和沉积在所述基材的所述顶部表面上的那部分膜的第二湿法蚀刻速率相对应的RF功率,其中,根据步骤(i)中的所述第一和第二关系,所述第二湿法蚀刻速率等于或高于所述第一湿法蚀刻速率,使得膜在湿法蚀刻后的共形性在90%~110%的范围内,其中共形性定义为沉积在凹槽侧壁上的那部分膜的厚度与沉积在基材顶部表面上的那部分膜的厚度的比例;以及
(iii)在与用于所述第一和第二关系中的条件相等的条件下,利用PEALD将介电膜沉积在基材的凹槽中,其中,RF功率是步骤(ii)中确定的功率。
2.如权利要求1所述的方法,其特征在于,对用于步骤(iii)中的RF功率进行选择,以根据步骤(i)中的所述第一和第二关系使所述第二湿法蚀刻速率等于所述第一湿法蚀刻速率。
3.如权利要求1所述的方法,其特征在于,所述前体为二甲基酰胺基金属络合物。
4.如权利要求3所述的方法,其特征在于,所述金属络合物中的金属为钛。
5.如权利要求1所述的方法,其特征在于,用于步骤(iii)中采用的RF功率相对于单位面积的所述基材在0.07W/cm3~0.7W/cm3的范围内。
6.如权利要求1所述的方法,其特征在于,所述凹槽具有100nm~500nm的深度和1~5的纵横比。
7.如权利要求1所述的方法,其特征在于,步骤(iii)中沉积的所述介电膜具有10nm~100nm的厚度。
8.如权利要求1所述的方法,其特征在于,还包括:(iv)对步骤(iii)中沉积的所述介电膜进行蚀刻。
9.如权利要求8所述的方法,其特征在于,步骤(iii)中沉积的所述介电膜具有第一共形性,步骤(iv)中蚀刻的所述介电膜具有第二共形性,其中,所述第二共形性大于所述第一共形性。
10.如权利要求9所述的方法,其特征在于,所述第二共形性为90%~110%。
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- 2016-10-12 JP JP2016200539A patent/JP2017078223A/ja active Pending
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US20170107621A1 (en) | 2017-04-20 |
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