CN1064986C - 一种清洗和腐蚀电子显示器以及衬片的组合物 - Google Patents
一种清洗和腐蚀电子显示器以及衬片的组合物 Download PDFInfo
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- CN1064986C CN1064986C CN988000458A CN98800045A CN1064986C CN 1064986 C CN1064986 C CN 1064986C CN 988000458 A CN988000458 A CN 988000458A CN 98800045 A CN98800045 A CN 98800045A CN 1064986 C CN1064986 C CN 1064986C
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Images
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/12—Light metals
- C23G1/125—Light metals aluminium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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Abstract
Description
清洗(SiO2) | 1.H2SO4∶H2O2(6∶1),120℃2.50%HF∶H2O(1∶100~1000)3.NH4OH∶H2O2∶H2O(1∶1∶7)SC-14.HCl∶H2O2∶H2O(1∶1∶6)SC-25.去离子水漂洗 |
腐蚀(SiO2) | 1.40%NH4F∶50%HF(7∶1)BOE2.40%NH4F∶50%HF(7∶1)+H2O2 |
腐蚀(SiNx) | H3PO4∶H2O(85∶1)或40%NH4F∶50%HF(20∶1) |
腐蚀(Al和Al合金) | H3PO4∶CH3COOH∶HNO3∶H2O(65∶5∶5∶25) |
测试件 | 组合物溶液 | 处理时间(秒) | 水湿润性 | 备注 |
a | A | 8 | 好 | |
a | B | 7 | 好 | 加入5v%异丙醇 |
a | 10%HF | 10 | 好 | |
b | A | 10 | 好 | 加入5v%异丙醇 |
b | A | 6 | 好 | |
b | B | 6 | 好 | 加入5v%异丙醇 |
b | B | 5 | 好 | 加入15V%异丙醇 |
b | 10%HF | 12 | 好 | |
c | C | 50 | 好 | |
c | 20%HF | 50 | 好 | |
d | A | 12 | 好 | |
d | A | 9 | 好 | 加入5v%异丙醇 |
d | B | 8 | 好 | 加入5V%异丙醇 |
d | B | 7 | 好 | 加入15v%异丙醇 |
d | 10%HF | 12 | 好 | |
e | B | 10 | 好 | B溶液∶H2O=1∶4 |
e | 2%HF | 15 | 好 | |
f | B | 10 | 好 | B溶液∶H2O=1∶2 |
f | 30%NH4HF2 | 15 | 好 | |
g | B | 10 | 好 |
测试件 | 组合物 | 处理时间(秒) | 处理温度(℃) | 水湿润性 |
a | F | 4 | 25 | 好 |
a | 10%HF | 6 | 25 | 好 |
b | F | 6 | 25 | 好 |
b | 10%HF | 9 | 25 | 好 |
c | F | 8 | 25 | 好 |
c | 20%HF | 12 | 25 | 好 |
测试件 | 组合物溶液 | 处理时间(秒) | 处理温度(℃) | 表面粗糙度 |
a | A | 60 | 25 | Ra:0.064μmRt:0.501μm |
a | 10%HF | 60 | 25 | Ra:0.069μmRt:0.724μm |
光泽度 | 水湿润性 | |
新管 | 97.25% | 不好 |
CeO2抛光 | 96.4% | 不好 |
组合物B | 97.25% | 好 |
光泽度 | 水湿润性 | |
新管 | 97.25% | 好 |
CeO2抛光 | 96.4% | 好 |
组合物G | 97.25% | 好 |
12%HF | 组全物A | 50%稀释组合物A | 组合物B | ||
重量(g) | 浸渍前 | 36.78 | 37.52 | 37.05 | 35.78 |
浸渍后 | 35.78 | 37.05 | 36.78 | 35.64 | |
重量损失(%) | 2.72 | 1.25 | 0.73 | 0.39 | |
F离子量(ppm) | 55,000 | 80,000 | 40,000 | 26,000 |
化合物溶液B1 | B1+5v%异丙醇 | B1+25v%异丙醇 | DHF | DHF | |
F离子量(ppm ) | 532 | 505 | 399 | 475 | 475 |
浸渍时间(秒) | 10 | 5 | 3 | 30 | 40 |
水湿润性 | 好 | 好 | 好 | 不好 | 好 |
组合物G | DHF | DHF | |
F离子量(ppm) | 532 | 475 | 475 |
浸渍时间(秒) | 3 | 30 | 40 |
水湿润性 | 好 | 不好 | 不好 |
组合物 | 处理温度(25℃) | 处理时间(秒) | |
SiNx | F | 25 | 120 |
G | 25 | 90 | |
H | 25 | 120 | |
I | 25 | 90 | |
BOE | 25 | 180 | |
Al-Nb | F | 25 | 360 |
G | 25 | 360 | |
H | 25 | 90 | |
I | 25 | 60 | |
Al腐蚀剂 | 25 | 300 |
处理时间(分) | 重量损失(%) | 水湿润性 | 目测检查颗粒 | |
15%HF | 10 | 0.12 | 好 | 好 |
组合物溶液A | 10 | 0.06 | 好 | 好 |
粗糙度(μm) | 第一次检测 | 第二次检测 | 第三次检测 | 第四次检测 | 第五次检测 | 平均 | |
组合物溶液D | Ra | 0.024 | 0.022 | 0.019 | 0.016 | 0.016 | 0.0194 |
Rq | 0.031 | 0.03 | 0.024 | 0.021 | 0.021 | 0.0254 | |
Rt | 0.234 | 0.312 | 0.143 | 0.202 | 0.141 | 0.2064 | |
MAE | Ra | 0.079 | 0.08 | 0.103 | 0.08 | 0.08 | 0.0844 |
Rq | 0.101 | 0.103 | 0.145 | 0.104 | 0.105 | 0.1116 | |
Rt | 0.644 | 0.793 | 1.223 | 1.027 | 0.739 | 0.8852 |
测试件 | 腐蚀溶液 | 处理时间(分) | 处理温度(℃) | 表面粗糙度(μm) | 腐蚀厚度(μm) |
a | 组合物D | 20 | 25-27 | Ra:0.019Rt:0.206 | 25 |
a | MAE | 1.5 | 25-45 | Ra:0.084Rt:0.885 | 32 |
测试件 | 组合物 | 处理时间(分) | 处理温度(℃) | 疏水性 | 颗粒检验 |
b | A | 5 | 25 | 0 | 好 |
c | A | 8 | 25 | 0 | 好 |
d | A | 2 | 25 | 0 | 好 |
d | B | 6 | 25 | 0 | 好 |
Claims (19)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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KR19970001539 | 1997-01-21 | ||
KR1997/1539 | 1997-01-21 | ||
KR1997/53384 | 1997-10-17 | ||
KR1019970053384A KR100248113B1 (ko) | 1997-01-21 | 1997-10-17 | 전자 표시 장치 및 기판용 세정 및 식각 조성물 |
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CN1216059A CN1216059A (zh) | 1999-05-05 |
CN1064986C true CN1064986C (zh) | 2001-04-25 |
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CN988000458A Expired - Fee Related CN1064986C (zh) | 1997-01-21 | 1998-01-21 | 一种清洗和腐蚀电子显示器以及衬片的组合物 |
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US (1) | US6194365B1 (zh) |
EP (1) | EP0892840B1 (zh) |
JP (3) | JP4069961B2 (zh) |
KR (1) | KR100248113B1 (zh) |
CN (1) | CN1064986C (zh) |
DE (1) | DE69817275D1 (zh) |
MY (1) | MY118541A (zh) |
WO (1) | WO1998031768A1 (zh) |
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JPS5611997A (en) * | 1979-07-12 | 1981-02-05 | Nagano Takashi | Detergent |
JPS5967370A (ja) * | 1982-10-06 | 1984-04-17 | Mitsubishi Gas Chem Co Inc | 化学的溶解処理液 |
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- 1997-10-17 KR KR1019970053384A patent/KR100248113B1/ko not_active IP Right Cessation
-
1998
- 1998-01-21 US US09/142,750 patent/US6194365B1/en not_active Expired - Fee Related
- 1998-01-21 JP JP53415798A patent/JP4069961B2/ja not_active Expired - Fee Related
- 1998-01-21 DE DE69817275T patent/DE69817275D1/de not_active Expired - Lifetime
- 1998-01-21 WO PCT/KR1998/000011 patent/WO1998031768A1/en active IP Right Grant
- 1998-01-21 MY MYPI98000251A patent/MY118541A/en unknown
- 1998-01-21 EP EP98901121A patent/EP0892840B1/en not_active Expired - Lifetime
- 1998-01-21 CN CN988000458A patent/CN1064986C/zh not_active Expired - Fee Related
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2007
- 2007-01-04 JP JP2007000265A patent/JP2007201459A/ja active Pending
- 2007-01-04 JP JP2007000271A patent/JP2007154205A/ja active Pending
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GB1276550A (en) * | 1969-10-13 | 1972-06-01 | Croda Bowmans Chemicals Ltd | Etching compositions and uses thereof |
EP0106301A1 (de) * | 1982-10-13 | 1984-04-25 | Erich Dr. Sälzle | Verfahren zum Polieren von Glasgegenständen in einem Schwefelsäure und Flusssäure enthaltenden Polierbad |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI479012B (zh) * | 2008-04-15 | 2015-04-01 | Dongjin Semichem Co Ltd | 液晶顯示裝置用玻璃基板的清洗及蝕刻組成物以及利用它的玻璃基板的蝕刻方法 |
CN104422723A (zh) * | 2013-09-02 | 2015-03-18 | 株式会社堀场制作所 | 玻璃电极的响应玻璃用清洗液和响应玻璃清洗方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0892840A1 (en) | 1999-01-27 |
WO1998031768A1 (en) | 1998-07-23 |
JP2007154205A (ja) | 2007-06-21 |
US6194365B1 (en) | 2001-02-27 |
EP0892840B1 (en) | 2003-08-20 |
KR100248113B1 (ko) | 2000-03-15 |
JP2000507304A (ja) | 2000-06-13 |
DE69817275D1 (de) | 2003-09-25 |
CN1216059A (zh) | 1999-05-05 |
JP4069961B2 (ja) | 2008-04-02 |
JP2007201459A (ja) | 2007-08-09 |
KR19980070026A (ko) | 1998-10-26 |
MY118541A (en) | 2004-12-31 |
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