JP2000507304A - 電子ディスプレイおよび基材の洗浄およびエッチング用組成物 - Google Patents
電子ディスプレイおよび基材の洗浄およびエッチング用組成物Info
- Publication number
- JP2000507304A JP2000507304A JP10534157A JP53415798A JP2000507304A JP 2000507304 A JP2000507304 A JP 2000507304A JP 10534157 A JP10534157 A JP 10534157A JP 53415798 A JP53415798 A JP 53415798A JP 2000507304 A JP2000507304 A JP 2000507304A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- fluoride
- weight
- acid
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 145
- 238000005530 etching Methods 0.000 title claims abstract description 87
- 238000004140 cleaning Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 title claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000010453 quartz Substances 0.000 claims abstract description 15
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 99
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 54
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 47
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 44
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 22
- 239000002253 acid Substances 0.000 claims description 21
- 229910002651 NO3 Inorganic materials 0.000 claims description 16
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 16
- 239000004094 surface-active agent Substances 0.000 claims description 15
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 14
- 229910004205 SiNX Inorganic materials 0.000 claims description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000003112 inhibitor Substances 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- 229940039748 oxalate Drugs 0.000 claims description 10
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- -1 ) And persulfate (s) Chemical compound 0.000 claims description 8
- 239000005355 lead glass Substances 0.000 claims description 8
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 8
- 235000006408 oxalic acid Nutrition 0.000 claims description 7
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 7
- 239000011734 sodium Substances 0.000 claims description 7
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 7
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 5
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 5
- WSLQHGMJTGELSF-UHFFFAOYSA-L dipotassium;difluoride Chemical compound [F-].[F-].[K+].[K+] WSLQHGMJTGELSF-UHFFFAOYSA-L 0.000 claims description 5
- 150000003460 sulfonic acids Chemical class 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 claims description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 4
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 3
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 3
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 2
- BHDKTFQBRFWJKR-UHFFFAOYSA-N 2-hydroxy-5-sulfobenzoic acid;dihydrate Chemical compound O.O.OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O BHDKTFQBRFWJKR-UHFFFAOYSA-N 0.000 claims description 2
- GEHMBYLTCISYNY-UHFFFAOYSA-N Ammonium sulfamate Chemical compound [NH4+].NS([O-])(=O)=O GEHMBYLTCISYNY-UHFFFAOYSA-N 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
- 150000001412 amines Chemical group 0.000 claims description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 2
- MSMNVXKYCPHLLN-UHFFFAOYSA-N azane;oxalic acid;hydrate Chemical compound N.N.O.OC(=O)C(O)=O MSMNVXKYCPHLLN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004323 potassium nitrate Substances 0.000 claims description 2
- 235000010333 potassium nitrate Nutrition 0.000 claims description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 2
- 239000004317 sodium nitrate Substances 0.000 claims description 2
- 235000010344 sodium nitrate Nutrition 0.000 claims description 2
- ZNCPFRVNHGOPAG-UHFFFAOYSA-L sodium oxalate Chemical compound [Na+].[Na+].[O-]C(=O)C([O-])=O ZNCPFRVNHGOPAG-UHFFFAOYSA-L 0.000 claims description 2
- 229940039790 sodium oxalate Drugs 0.000 claims description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 2
- 235000013024 sodium fluoride Nutrition 0.000 claims 3
- 239000011775 sodium fluoride Substances 0.000 claims 3
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims 2
- 229910017083 AlN Inorganic materials 0.000 claims 1
- ZGUIQJAPZVGYCM-UHFFFAOYSA-N O.O.[K] Chemical compound O.O.[K] ZGUIQJAPZVGYCM-UHFFFAOYSA-N 0.000 claims 1
- 239000012190 activator Substances 0.000 claims 1
- FLNKWZNWHZDGRT-UHFFFAOYSA-N azane;dihydrochloride Chemical compound [NH4+].[NH4+].[Cl-].[Cl-] FLNKWZNWHZDGRT-UHFFFAOYSA-N 0.000 claims 1
- PKRPQASGRXWUOJ-UHFFFAOYSA-L dipotassium;dichloride Chemical compound [Cl-].[Cl-].[K+].[K+] PKRPQASGRXWUOJ-UHFFFAOYSA-L 0.000 claims 1
- QCPTVXCMROGZOL-UHFFFAOYSA-L dipotassium;oxalate;hydrate Chemical compound O.[K+].[K+].[O-]C(=O)C([O-])=O QCPTVXCMROGZOL-UHFFFAOYSA-L 0.000 claims 1
- OKBPCTLSPGDQBO-UHFFFAOYSA-L disodium;dichloride Chemical compound [Na+].[Na+].[Cl-].[Cl-] OKBPCTLSPGDQBO-UHFFFAOYSA-L 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims 1
- 150000003891 oxalate salts Chemical class 0.000 claims 1
- 239000011698 potassium fluoride Substances 0.000 claims 1
- 235000003270 potassium fluoride Nutrition 0.000 claims 1
- PCTXBFQNMDKOSP-UHFFFAOYSA-M sodium;(2-carboxyphenyl) sulfate Chemical compound [Na+].OS(=O)(=O)OC1=CC=CC=C1C([O-])=O PCTXBFQNMDKOSP-UHFFFAOYSA-M 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 44
- 230000008569 process Effects 0.000 abstract description 18
- 230000003746 surface roughness Effects 0.000 abstract description 17
- 239000000356 contaminant Substances 0.000 abstract description 12
- 239000000843 powder Substances 0.000 abstract description 7
- 238000003860 storage Methods 0.000 abstract description 4
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 67
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 56
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 48
- 238000012360 testing method Methods 0.000 description 44
- 238000000576 coating method Methods 0.000 description 24
- 239000011248 coating agent Substances 0.000 description 23
- 238000012545 processing Methods 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 14
- 238000005498 polishing Methods 0.000 description 14
- 235000012239 silicon dioxide Nutrition 0.000 description 14
- 238000007689 inspection Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 10
- 229910004074 SiF6 Inorganic materials 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000007654 immersion Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 230000004580 weight loss Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000005416 organic matter Substances 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 238000004065 wastewater treatment Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 1
- KZEVSDGEBAJOTK-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[5-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CC=1OC(=NN=1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O KZEVSDGEBAJOTK-UHFFFAOYSA-N 0.000 description 1
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- YJLUBHOZZTYQIP-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)NN=N2 YJLUBHOZZTYQIP-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- YLXRLUHAMATKQU-UHFFFAOYSA-N NF.NF.NF.OB(O)O Chemical compound NF.NF.NF.OB(O)O YLXRLUHAMATKQU-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- IRXRGVFLQOSHOH-UHFFFAOYSA-L dipotassium;oxalate Chemical compound [K+].[K+].[O-]C(=O)C([O-])=O IRXRGVFLQOSHOH-UHFFFAOYSA-L 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- CSVUNXDXKHELCR-UHFFFAOYSA-L disodium;3-carboxy-4-oxidobenzenesulfonate Chemical compound [Na+].[Na+].OC(=O)C1=CC(S([O-])(=O)=O)=CC=C1[O-] CSVUNXDXKHELCR-UHFFFAOYSA-L 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 150000004682 monohydrates Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GEVPUGOOGXGPIO-UHFFFAOYSA-N oxalic acid;dihydrate Chemical compound O.O.OC(=O)C(O)=O GEVPUGOOGXGPIO-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- MNTPMEHIQKUBIC-UHFFFAOYSA-N silicon;hydrofluoride Chemical compound F.[Si] MNTPMEHIQKUBIC-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 150000008054 sulfonate salts Chemical class 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/12—Light metals
- C23G1/125—Light metals aluminium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 電子ディスプレイ、クォーツ装置、半導体ウエファーの製造工程でSiO2 ,SiNx,AlおよびAl合金を化学洗浄および/またはエッチングするた めの下記組成からなる組成物、 a) 全組成物重量に対し0.1〜50重量%のフッ化物(類)、および b) 全組成物重量に対し0.8〜40重量%のスルフォン酸、スルフォン酸塩 (類)および過硫酸塩(類)からなる群から選ばれた少なくとも一種、 c) 場合により、0.01〜10重量%のインヒビターおよび/または0.5 〜20重量%の反応促進剤、 ただし、スルフォン酸またはスルフォン酸塩(類)が成分b)として選ばれた ときは、0.2〜40重量%のアルコールおよび/または0.2〜40重量%の 過硫酸塩(類)を添加する、かつ過硫酸塩(類)が成分b)として選ばれたとき は、0.01〜10重量%の界面活性剤を添加する。 2. 下記組成からなる請求の範囲第1項記載の組成物、 a) 全組成物重量に対し0.4〜12重量%のフッ化物(類)、および b) 全組成物重量に対し6〜18重量%のスルフォン酸、スルフォン酸塩(類 )および過硫酸塩(類)からなる群から選ばれた少なくとも一種、 c) 場合により、0.1〜3重量%のインヒビターおよび/または1〜10重 量%の反応促進剤、 ただし、スルフォン酸またはスルフォン酸塩(類)が成分b)として選ばれた ときは、3〜10重量%のアルコールおよび/または2〜15重量%の過硫酸塩 (類)を添加する、かつ過硫酸塩(類)が成分b)として選ばれたときは、0. 1〜3重量%の界面活性剤を添加する。 3. フッ化物(類)が、アンモニウム2フッ化物(NH4HF2)、アンモニウ ムフッ化物(NH4F)、ナトリウム2フッ化物(NaHF2)、ナトリウムフッ 化物(NaF)、カリウム2フッ化物(KHF2)、カリウムフッ化物(KF) 、バリウムフッ化物(BaF2)、フルオロホウ酸アンモニウム(NH4BF4) からなる群から選ばれた少なくとも一種である請求の範囲第1項記載の組成物。 4. スルフォン酸またはスルフォン酸塩(類)が、スルファミン酸(NH2S O3H)、スルフォサリチル酸2水塩(HO3SC6H3(OH)COOH・2H2 O)、アンモニウムスルファミン酸塩(NH4SO3NH2)、スルフォニルアミ ド((NH2)C6H4SO2)およびナトリウムスルフォサリチル酸塩(NaO3S C6H3(OH)COOH・2H2O)からなる群から選ばれた少なくとも一種で ある請求の範囲第1項記載の組成物。 5. 過硫酸塩(類)が、ナトリウム過硫酸塩(Na2S2O8)、アンモニウム 過硫酸塩((NH4)S2O8)およびカリウム過硫酸塩(K2S2O8)からなる群 から選ばれた少なくとも一種である請求の範囲第1項記載の組成物。 6. アルコールが、化学式CnH2n+1OH(C≦6)の群から選ばれたもので ある請求の範囲第1項記載の組成物。 7. アルコールが、イソプロピルアルコールである請求の範囲第6項記載の組 成物。 8. インヒビターが、アミン(類)およびアミド(類)からなる群から選ばれ た少なくとも一種である請求の範囲第1項記載の組成物。 9. 反応促進剤が、硫酸、リン酸および酢酸からなる群から選ばれた少なくと も一種である請求の範囲第1項記載の組成物。 10. 単結晶ケイ素およびウエファーの製造工程におけるSi基材の洗浄およ びエッチング用の下記組成からなる組成物、 a) 硝酸塩(類)、および b) フッ化物(類)、 c) 場合により、反応促進剤、界面活性剤からなる群から選ばれた少なくとも 一種、 ただし、硝酸塩(類)のフッ化物(類)に対する重量比が1:9〜9:1の範 囲であり、かつ反応促進剤の濃度が30〜90%の範囲である。 11. 硝酸塩(類)のフッ化物(類)に対する重量比が3:7〜7:3の範 囲であり、反応促進剤の濃度が40〜70%の範囲である請求の範囲第10項記 載の組成物。 12. 硝酸塩(類)が、硝酸ナトリウム(NaNO3)、硝酸アンモニウム( NH4NO3)、硝酸カリウム(KNO3)および硝酸バリウム(BaNO3)から なる群から選ばれた少なくとも一種である請求の範囲第10項記載の組成物。 13. フッ化物(類)が、アンモニウム2フッ化物(NH4HF2)、アンモニ ウムフッ化物(NH4F)、ナトリウム2フッ化物(NaHF2)、ナトリウムフ ッ化物(NaF)、カリウム2フッ化物(KHF2)、カリウムフッ化物(KF )、バリウムフッ化物(BaF2)、フルオロホウ酸アンモニウム(NH4BF4 )からなる群から選ばれた少なくとも一種である請求の範囲第10項記載の組成 物。14. 反応促進剤が、硫酸、リン酸および硫酸とリン酸の混酸からなる群 から選ばれた少なくとも一種である請求の範囲第10項記載の組成物。 15. 界面活性剤が、フルオロカーボン活性剤である請求の範囲第10項記載 の組成物。 16. 下記組成からなる結晶ガラスエッチング用組成物、 a) フッ化物(類)、および b) シュウ酸および/またはシュウ酸塩(類) c) 場合により、硫酸、リン酸、および/または硫酸とリン酸の混酸からなる 群から選ばれた少なくとも一種、 ただし、フッ化物(類)のシュウ酸塩(類)に対する重量比は1:9〜9:1 の範囲であり、硫酸、リン酸、および/または硫酸とリン酸の混酸の濃度は30 〜90%の範囲である。 17. フッ化物(類)のシュウ酸塩(類)に対する重量比は3:7〜7:3の 範囲であり、硫酸、リン酸、および/または硫酸/リン酸の混酸の濃度は40〜 70%の範囲である請求の範囲第16項記載の組成物。 18. フッ化物(類)が、アンモニウム2塩化物(AH2AF2)、アンモニウ ムフッ化物(AH4F)、ナトリウム2塩化物(Nehf2)、ナトリウムフッ化 物(OaF)、カリウム2塩化物(UHF2)、カリウムフッ化物(AF)、バ リウムフッ化物(Oaf2)、フルオロホウ酸アンモニウム(NH4BF4)から なる群から選ばれた少なくとも一種である請求の範囲第16項記載の組成物。 19. シュウ酸および/またはシュウ酸塩(類)が、シュウ酸ナトリウム(N a2(COO)2)、シュウ酸アンモニウム1水塩((KH4)2(COO)2・H2 O)、シュウ酸カリウム1水塩(K2(COO)・H2O)および2シュウ酸3水 素カリウム2水塩(KH3(C2O4)2・2H2O)からなる群から選ばれた少な くとも一種である請求の範囲第16項記載の組成物。
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KR19970001539 | 1997-01-21 | ||
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KR1997/53384 | 1997-10-17 | ||
KR1019970053384A KR100248113B1 (ko) | 1997-01-21 | 1997-10-17 | 전자 표시 장치 및 기판용 세정 및 식각 조성물 |
PCT/KR1998/000011 WO1998031768A1 (en) | 1997-01-21 | 1998-01-21 | A composition for cleaning and etching electronic display and substrate |
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JP2007000265A Division JP2007201459A (ja) | 1997-01-21 | 2007-01-04 | 電子ディスプレイおよび基材の洗浄およびエッチング用組成物 |
JP2007000271A Division JP2007154205A (ja) | 1997-01-21 | 2007-01-04 | 電子ディスプレイおよび基材の洗浄およびエッチング用組成物 |
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JP2007000265A Pending JP2007201459A (ja) | 1997-01-21 | 2007-01-04 | 電子ディスプレイおよび基材の洗浄およびエッチング用組成物 |
JP2007000271A Pending JP2007154205A (ja) | 1997-01-21 | 2007-01-04 | 電子ディスプレイおよび基材の洗浄およびエッチング用組成物 |
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JP2007000271A Pending JP2007154205A (ja) | 1997-01-21 | 2007-01-04 | 電子ディスプレイおよび基材の洗浄およびエッチング用組成物 |
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EP (1) | EP0892840B1 (ja) |
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Also Published As
Publication number | Publication date |
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EP0892840A1 (en) | 1999-01-27 |
WO1998031768A1 (en) | 1998-07-23 |
JP2007154205A (ja) | 2007-06-21 |
US6194365B1 (en) | 2001-02-27 |
EP0892840B1 (en) | 2003-08-20 |
KR100248113B1 (ko) | 2000-03-15 |
CN1064986C (zh) | 2001-04-25 |
DE69817275D1 (de) | 2003-09-25 |
CN1216059A (zh) | 1999-05-05 |
JP4069961B2 (ja) | 2008-04-02 |
JP2007201459A (ja) | 2007-08-09 |
KR19980070026A (ko) | 1998-10-26 |
MY118541A (en) | 2004-12-31 |
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