CN102628009B - 清洗液及清洗方法 - Google Patents

清洗液及清洗方法 Download PDF

Info

Publication number: CN102628009B
Authority: CN; China
Prior art keywords: scavenging solution; ammonium; tetramethyl; cerium oxide; composition
Prior art date: 2011-02-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CN201210019335.9A

Other languages

English (en)

Chinese (zh)

Other versions

CN102628009A (zh

Inventor

宫下雅之

久次米孝信

山本雅士

伊达和哉

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Stella Chemifa Corp

Original Assignee

Stella Chemifa Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-02-03

Filing date

2012-01-20

Publication date

2016-01-13

2012-01-20 Application filed by Stella Chemifa Corp filed Critical Stella Chemifa Corp

2012-08-08 Publication of CN102628009A publication Critical patent/CN102628009A/zh

2016-01-13 Application granted granted Critical

2016-01-13 Publication of CN102628009B publication Critical patent/CN102628009B/zh

Status Expired - Fee Related legal-status Critical Current

2032-01-20 Anticipated expiration legal-status Critical

Links

230000002000 scavenging effect Effects 0.000 title claims abstract description 135
238000000034 method Methods 0.000 title claims abstract description 29
238000010926 purge Methods 0.000 title claims abstract description 17
239000000463 material Substances 0.000 claims abstract description 64
229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 50
BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 50
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 32
229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 29
150000003863 ammonium salts Chemical class 0.000 claims abstract description 26
NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims abstract description 24
229910052684 Cerium Inorganic materials 0.000 claims abstract description 24
BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims abstract description 22
229910052921 ammonium sulfate Inorganic materials 0.000 claims abstract description 22
235000011130 ammonium sulphate Nutrition 0.000 claims abstract description 22
235000019270 ammonium chloride Nutrition 0.000 claims abstract description 12
KJFVITRRNTVAPC-UHFFFAOYSA-L tetramethylazanium;sulfate Chemical compound C[N+](C)(C)C.C[N+](C)(C)C.[O-]S([O-])(=O)=O KJFVITRRNTVAPC-UHFFFAOYSA-L 0.000 claims abstract description 12
PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims abstract description 10
-1 cerium ion Chemical class 0.000 claims abstract description 10
KUCWUAFNGCMZDB-UHFFFAOYSA-N 2-amino-3-nitrophenol Chemical compound NC1=C(O)C=CC=C1[N+]([O-])=O KUCWUAFNGCMZDB-UHFFFAOYSA-N 0.000 claims abstract description 8
OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 claims abstract description 8
239000000203 mixture Substances 0.000 claims description 72
239000000758 substrate Substances 0.000 claims description 26
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
239000013543 active substance Substances 0.000 claims description 14
239000004065 semiconductor Substances 0.000 claims description 12
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
239000011521 glass Substances 0.000 claims description 5
239000010453 quartz Substances 0.000 claims description 5
239000003960 organic solvent Substances 0.000 claims description 3
239000003002 pH adjusting agent Substances 0.000 claims description 3
239000003352 sequestering agent Substances 0.000 claims description 3
239000000919 ceramic Substances 0.000 claims description 2
239000000243 solution Substances 0.000 description 115
238000004140 cleaning Methods 0.000 description 35
230000000052 comparative effect Effects 0.000 description 25
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 18
230000000694 effects Effects 0.000 description 15
238000002156 mixing Methods 0.000 description 15
GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 14
230000002829 reductive effect Effects 0.000 description 14
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
229910052710 silicon Inorganic materials 0.000 description 13
239000010703 silicon Substances 0.000 description 13
239000007788 liquid Substances 0.000 description 11
LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 10
238000000227 grinding Methods 0.000 description 10
239000007864 aqueous solution Substances 0.000 description 9
238000004519 manufacturing process Methods 0.000 description 7
239000012528 membrane Substances 0.000 description 6
239000007769 metal material Substances 0.000 description 6
238000012544 monitoring process Methods 0.000 description 6
239000002245 particle Substances 0.000 description 6
239000002002 slurry Substances 0.000 description 6
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
239000004411 aluminium Substances 0.000 description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 5
238000005260 corrosion Methods 0.000 description 5
230000007797 corrosion Effects 0.000 description 5
239000010936 titanium Substances 0.000 description 5
229910052719 titanium Inorganic materials 0.000 description 5
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 4
229910000422 cerium(IV) oxide Inorganic materials 0.000 description 4
150000003839 salts Chemical class 0.000 description 4
239000007858 starting material Substances 0.000 description 4
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
238000005516 engineering process Methods 0.000 description 3
150000002500 ions Chemical class 0.000 description 3
229910017604 nitric acid Inorganic materials 0.000 description 3
229910021642 ultra pure water Inorganic materials 0.000 description 3
239000012498 ultrapure water Substances 0.000 description 3
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
229910052581 Si3N4 Inorganic materials 0.000 description 2
BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
239000002253 acid Substances 0.000 description 2
229910000147 aluminium phosphate Inorganic materials 0.000 description 2
230000033228 biological regulation Effects 0.000 description 2
239000003795 chemical substances by application Substances 0.000 description 2
239000000470 constituent Substances 0.000 description 2
239000013078 crystal Substances 0.000 description 2
238000011161 development Methods 0.000 description 2
238000009826 distribution Methods 0.000 description 2
MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
229960002050 hydrofluoric acid Drugs 0.000 description 2
239000012535 impurity Substances 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
229920005591 polysilicon Polymers 0.000 description 2
239000002994 raw material Substances 0.000 description 2
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
230000006641 stabilisation Effects 0.000 description 2
238000011105 stabilization Methods 0.000 description 2
WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
241000282326 Felis catus Species 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
239000002202 Polyethylene glycol Substances 0.000 description 1
229920013701 VORANOL™ Polymers 0.000 description 1
150000007933 aliphatic carboxylic acids Chemical class 0.000 description 1
150000005215 alkyl ethers Chemical class 0.000 description 1
150000001412 amines Chemical class 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
235000011114 ammonium hydroxide Nutrition 0.000 description 1
239000003945 anionic surfactant Substances 0.000 description 1
239000005388 borosilicate glass Substances 0.000 description 1
150000007516 brønsted-lowry acids Chemical class 0.000 description 1
150000007528 brønsted-lowry bases Chemical class 0.000 description 1
125000002091 cationic group Chemical group 0.000 description 1
239000003093 cationic surfactant Substances 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
230000002596 correlated effect Effects 0.000 description 1
230000000875 corresponding effect Effects 0.000 description 1
229910021419 crystalline silicon Inorganic materials 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000013461 design Methods 0.000 description 1
238000007865 diluting Methods 0.000 description 1
238000007598 dipping method Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
230000002708 enhancing effect Effects 0.000 description 1
238000011156 evaluation Methods 0.000 description 1
238000011010 flushing procedure Methods 0.000 description 1
239000006260 foam Substances 0.000 description 1
125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
238000003973 irrigation Methods 0.000 description 1
230000002262 irrigation Effects 0.000 description 1
238000005259 measurement Methods 0.000 description 1
230000003472 neutralizing effect Effects 0.000 description 1
239000002736 nonionic surfactant Substances 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
239000005360 phosphosilicate glass Substances 0.000 description 1
238000005268 plasma chemical vapour deposition Methods 0.000 description 1
229920001223 polyethylene glycol Polymers 0.000 description 1
239000002244 precipitate Substances 0.000 description 1
238000003672 processing method Methods 0.000 description 1
239000000047 product Substances 0.000 description 1
230000000630 rising effect Effects 0.000 description 1
238000004904 shortening Methods 0.000 description 1
238000007086 side reaction Methods 0.000 description 1
239000005368 silicate glass Substances 0.000 description 1
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
229910010271 silicon carbide Inorganic materials 0.000 description 1
238000004513 sizing Methods 0.000 description 1
239000007787 solid Substances 0.000 description 1
239000007921 spray Substances 0.000 description 1
239000004575 stone Substances 0.000 description 1
239000000126 substance Substances 0.000 description 1
DGCPSAFMAXHHDM-UHFFFAOYSA-N sulfuric acid;hydrofluoride Chemical compound F.OS(O)(=O)=O DGCPSAFMAXHHDM-UHFFFAOYSA-N 0.000 description 1
238000005406 washing Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/18—Glass; Plastics
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Inorganic Chemistry (AREA)
Life Sciences & Earth Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Oil, Petroleum & Natural Gas (AREA)
Wood Science & Technology (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Cleaning Or Drying Semiconductors (AREA)
Detergent Compositions (AREA)
Mechanical Treatment Of Semiconductor (AREA)

CN201210019335.9A 2011-02-03 2012-01-20 清洗液及清洗方法 Expired - Fee Related CN102628009B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2011-021986		2011-02-03
JP2011021986A JP5894369B2 (ja)	2011-02-03	2011-02-03	洗浄液及び洗浄方法

Publications (2)

Publication Number	Publication Date
CN102628009A CN102628009A (zh)	2012-08-08
CN102628009B true CN102628009B (zh)	2016-01-13

Family

ID=46586404

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201210019335.9A Expired - Fee Related CN102628009B (zh)	2011-02-03	2012-01-20	清洗液及清洗方法

Country Status (5)

Country	Link
JP (1)	JP5894369B2 (ja)
KR (1)	KR20120089570A (ja)
CN (1)	CN102628009B (ja)
SG (1)	SG182949A1 (ja)
TW (1)	TW201235464A (ja)

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* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN102380490B (zh) *	2011-10-20	2016-03-09	高佳太阳能股份有限公司	单晶硅边皮的清洗方法
CN104619806A (zh) *	2012-09-17	2015-05-13	株式会社Lg化学	含氧化铈废磨料的再生方法
KR101932774B1 (ko) *	2013-03-15	2018-12-26	동우 화인켐 주식회사	평판표시장치용 세정제 조성물 및 이를 이용한 세정방법
EP3006690B1 (en)	2013-05-30	2017-05-03	Toyota Jidosha Kabushiki Kaisha	Internal combustion engine with abnormality diagnosis device
JP6707451B2 (ja)	2013-12-11	2020-06-10	フジフイルムエレクトロニックマテリアルズユー．エス．エー．，インコーポレイテッド	表面の残留物を除去するための洗浄配合物
CN106190616A (zh) *	2016-07-13	2016-12-07	苏州普锐晶科技有限公司	频率片的腐蚀方法
US11377627B2 (en) *	2017-03-14	2022-07-05	Fujimi Incorporated	Composition for surface treatment, method for producing the same, and surface treatment method using the same
MY192579A (en) *	2017-03-31	2022-08-29	Kanto Kagaku	Cleaning solution composition
CN107164109A (zh) *	2017-03-31	2017-09-15	吴江创源新材料科技有限公司	一种蓝宝石晶片退火前清洗液及其制备方法和清洗工艺
CN109731849A (zh) *	2018-11-30	2019-05-10	东莞市晶博光电有限公司	一种手机盖板清洁方法
CN111376169A (zh) *	2018-12-28	2020-07-07	安集微电子科技（上海）股份有限公司	一种抛光后晶圆的清洗方法
JP7107332B2 (ja) *	2020-06-02	2022-07-27	栗田工業株式会社	分離膜の洗浄方法
CN112964124A (zh) *	2021-04-09	2021-06-15	杭州制氧机集团股份有限公司	一种铝制板翅式换热器传热翅片的自动清洗装置
CN114717295B (zh) *	2022-06-09	2022-09-30	季华实验室	液相芯片法杂交缓冲液、配制方法及液相芯片检测方法

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CN101084573A (zh) *	2004-12-20	2007-12-05	斯泰拉化工公司	微细加工处理剂以及使用其的微细加工处理方法
WO2010134184A1 (ja) *	2009-05-21	2010-11-25	ステラケミファ株式会社	微細加工処理剤、及び微細加工処理方法
CN102473636A (zh) *	2009-08-11	2012-05-23	斯泰拉化工公司	微细加工处理剂以及使用其的微细加工处理方法

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JP2001332527A (ja) *	2000-05-23	2001-11-30	Daikin Ind Ltd	Ｃｍｐ後洗浄液組成物
JP2008071799A (ja) *	2006-09-12	2008-03-27	Mitsubishi Gas Chem Co Inc	半導体基板の洗浄方法および洗浄装置
JP2008231350A (ja) *	2007-03-23	2008-10-02	Sumitomo Chemical Co Ltd	分岐ポリエチレンの製造方法
WO2009032460A1 (en) *	2007-08-02	2009-03-12	Advanced Technology Materials, Inc.	Non-fluoride containing composition for the removal of residue from a microelectronic device
JP2009231350A (ja) *	2008-03-19	2009-10-08	Stella Chemifa Corp	洗浄液及び洗浄方法

2011
- 2011-02-03 JP JP2011021986A patent/JP5894369B2/ja not_active Expired - Fee Related
2012
- 2012-01-13 KR KR1020120004390A patent/KR20120089570A/ko not_active Application Discontinuation
- 2012-01-16 TW TW101101601A patent/TW201235464A/zh unknown
- 2012-01-20 CN CN201210019335.9A patent/CN102628009B/zh not_active Expired - Fee Related
- 2012-02-02 SG SG2012007597A patent/SG182949A1/en unknown

Patent Citations (3)

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Publication number	Priority date	Publication date	Assignee	Title
CN101084573A (zh) *	2004-12-20	2007-12-05	斯泰拉化工公司	微细加工处理剂以及使用其的微细加工处理方法
WO2010134184A1 (ja) *	2009-05-21	2010-11-25	ステラケミファ株式会社	微細加工処理剤、及び微細加工処理方法
CN102473636A (zh) *	2009-08-11	2012-05-23	斯泰拉化工公司	微细加工处理剂以及使用其的微细加工处理方法

Also Published As

Publication number	Publication date
TW201235464A (en)	2012-09-01
CN102628009A (zh)	2012-08-08
JP5894369B2 (ja)	2016-03-30
SG182949A1 (en)	2012-08-30
KR20120089570A (ko)	2012-08-13
JP2012164713A (ja)	2012-08-30

Legal Events

Date	Code	Title	Description
2012-08-08	C06	Publication
2012-08-08	PB01	Publication
2014-02-19	C10	Entry into substantive examination
2014-02-19	SE01	Entry into force of request for substantive examination
2016-01-13	C14	Grant of patent or utility model
2016-01-13	GR01	Patent grant
2018-03-13	CF01	Termination of patent right due to non-payment of annual fee
2018-03-13	CF01	Termination of patent right due to non-payment of annual fee	Granted publication date: 20160113 Termination date: 20170120

Publication	Publication Date	Title
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