CN101418438A - 通过来自乙硅烷前体的远程等离子体cvd的高质量氧化硅膜 - Google Patents
通过来自乙硅烷前体的远程等离子体cvd的高质量氧化硅膜 Download PDFInfo
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- CN101418438A CN101418438A CNA2008101711607A CN200810171160A CN101418438A CN 101418438 A CN101418438 A CN 101418438A CN A2008101711607 A CNA2008101711607 A CN A2008101711607A CN 200810171160 A CN200810171160 A CN 200810171160A CN 101418438 A CN101418438 A CN 101418438A
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- 239000002243 precursor Substances 0.000 title claims abstract description 72
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 34
- 238000005268 plasma chemical vapour deposition Methods 0.000 title claims 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 117
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 106
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000151 deposition Methods 0.000 claims abstract description 35
- 238000000137 annealing Methods 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000008021 deposition Effects 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims description 67
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 49
- 239000013049 sediment Substances 0.000 claims description 41
- 150000003254 radicals Chemical class 0.000 claims description 40
- NTQGILPNLZZOJH-UHFFFAOYSA-N disilicon Chemical compound [Si]#[Si] NTQGILPNLZZOJH-UHFFFAOYSA-N 0.000 claims description 31
- 239000012686 silicon precursor Substances 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 29
- 229910021529 ammonia Inorganic materials 0.000 claims description 25
- 229910008045 Si-Si Inorganic materials 0.000 claims description 20
- 229910006411 Si—Si Inorganic materials 0.000 claims description 20
- 229910007991 Si-N Inorganic materials 0.000 claims description 19
- 229910006294 Si—N Inorganic materials 0.000 claims description 19
- -1 hydrogen nitrogen free radicals Chemical class 0.000 claims description 19
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims description 17
- 229920000548 poly(silane) polymer Polymers 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 15
- 125000003545 alkoxy group Chemical group 0.000 claims description 14
- 229910002808 Si–O–Si Inorganic materials 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- OUUQCZGPVNCOIJ-UHFFFAOYSA-N hydroperoxyl Chemical compound O[O] OUUQCZGPVNCOIJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims description 5
- 150000001722 carbon compounds Chemical class 0.000 claims description 3
- 238000006555 catalytic reaction Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 239000006227 byproduct Substances 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims 1
- 230000002378 acidificating effect Effects 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 25
- 238000005516 engineering process Methods 0.000 description 19
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- 230000006872 improvement Effects 0.000 description 14
- 239000002585 base Substances 0.000 description 11
- 239000003989 dielectric material Substances 0.000 description 10
- 230000009969 flowable effect Effects 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 229910008051 Si-OH Inorganic materials 0.000 description 6
- 229910006358 Si—OH Inorganic materials 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- 238000005815 base catalysis Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 230000008602 contraction Effects 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 150000002829 nitrogen Chemical class 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000000269 nucleophilic effect Effects 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- JRLTTZUODKEYDH-UHFFFAOYSA-N 8-methylquinoline Chemical group C1=CN=C2C(C)=CC=CC2=C1 JRLTTZUODKEYDH-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 238000007171 acid catalysis Methods 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- LUXIMSHPDKSEDK-UHFFFAOYSA-N bis(disilanyl)silane Chemical compound [SiH3][SiH2][SiH2][SiH2][SiH3] LUXIMSHPDKSEDK-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- UMQOSQJMIIITHA-UHFFFAOYSA-N cyclohexylsilane Chemical compound [SiH3]C1CCCCC1 UMQOSQJMIIITHA-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000006140 methanolysis reaction Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- GRVDJDISBSALJP-UHFFFAOYSA-N methyloxidanyl Chemical group [O]C GRVDJDISBSALJP-UHFFFAOYSA-N 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000005570 vertical transmission Effects 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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Abstract
本发明提供了一种在基板上沉积含硅和氮的膜的方法。该方法包括将含硅前体引入到包含基板的沉积室中,其中含硅前体包括至少两个硅原子。该方法还包括通过设置在沉积室外部的远程等离子体***产生至少一种自由基氮前体。而且,该方法包括将自由基氮前体引入到沉积室中,其中自由基氮和含硅前体反应且在基板上沉积含硅和氮的膜。而且,该方法包括在蒸汽气氛中退火含硅和氮的膜以形成氧化硅膜,其中蒸汽气氛包括水和酸性蒸汽。
Description
相关申请的交叉引用
本申请涉及到2006年5月30日提交的名称为“CHEMICAL VAPORDEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING ASILICON CONTANTING PRECURSOR AND ATOMIC OXYGEN”的、Ingle等人共同转让的美国专利申请No.60/803,493。该申请还涉及到也是在2007年10月22日提交的名称为“METHOD AND SYSTEM FOR IMPROVINGDIELECTRIC FILM QUALITY FOR VOID FREE GAP FILL”的、Mallick等人共同转让的代理卷号为A11125/T79600的美国专利申请。在此引入两件相关申请的整体内容作为参考。
技术领域
本发明一般涉及用于制造半导体器件的形成氧化硅膜的方法,尤其涉及通过来自乙硅烷前体的远程等离子体CVD的高质量氧化硅膜。
背景技术
诸如浅沟槽隔离结构(STI)的间隙和沟槽通常被用于对半导体器件上的元件进行电隔离。STI可包括形成在半导体基板隔离区域中的沟槽或间隙,用介电材料对其进行填充以防止附近器件结构(例如晶体管、二极管等)的电耦合。随着集成电路上的器件密度持续增加,在器件结构之间的尺寸和距离也持续降低。但是,STI沟槽的垂直高度通常不会与其水平宽度一样快地降低,这导致间隙和沟槽具有较大的高宽比(即较高的纵横比)。
虽然使得器件结构具有增加的纵横比的能力允许更多结构(例如晶体管、电容器、二极管等)被封装到半导体芯片基板相同表面积上,但是这也产生了制造问题。这些问题中的一个是在填充工艺期间难以完全填充这些结构中的间隙和沟槽而不产生孔洞或缝隙(seam)。必须用介电材料诸如氧化硅填充间隙和沟槽从而对附近的器件结构进行相互电隔离以使电噪音和漏电流最小。随着纵横比的增加,更加难以填充深的狭窄沟槽而不在填充沟槽的介电材料中产生孔洞或缝隙。
在介电层中的孔洞和缝隙在半导体器件制造期间和完成的器件中都会引起问题。孔洞和缝隙在介电材料中随机形成且具有不可预知的尺寸、位置和密度。这会导致不可预知的且不一致的层的后沉积处理,诸如不均匀的蚀刻、抛光、退火等。完成的器件中的孔洞和缝隙也在器件结构中的间隙和沟槽的介电质量方面产生变化。其他问题当中,这会导致由于电串扰、电荷泄漏以及一些情况下由于器件中的短路引起的错误的或劣质的器件性能。
已经开发出使在高纵横比结构上沉积介电材料期间形成的孔洞和缝隙最小化的技术。这些技术包括减慢介电材料的沉积速度以便其在沟槽的侧壁和底部上保持得更加共形。更加共形的沉积能降低在沟槽顶部上的材料堆积和介电材料过早封堵沟槽顶部以形成孔洞的机会(这个问题有时被称作“breadloafing(面包块)”)。但是,不幸的是,减慢沉积速度也意味着增加沉积时间,这降低了处理效率以及产率。
控制孔洞形成的另一种技术是增加所沉积介电材料的可流动。具有更大可流动的材料能够更快速地填充孔洞或缝隙并防止其变成填充容积内的永久缺陷。例如,通常采用高度可流动的旋涂玻璃(SOG)前体诸如PSZ膜、SAM24、BTBAS等以良好的共形性填充沟槽。但是,通过这种常规SOG膜增加氧化硅介电材料的可流动性通常导致由于剩余碳和硅烷醇基团引起的所沉积的膜具有低的膜密度。增加膜密度的一种手段是当固化SOG膜成为氧化硅膜时使用高温退火。但是,用于去除剩余碳和OH基团的高温退火也会引起相当大程度的膜体积收缩。在用于STI应用的狭窄沟槽中,所沉积的膜受到限制且不稳定收缩,从而导致包含具有多孔或含孔洞结构的低密度膜。
由此,对于用于增加沟槽、间隙和具有高纵横比的其他器件结构中的介电膜密度以实现无孔间隙填充的改进工艺仍存在需求。对于能够以高速度和良好可流动特性沉积介电材料而不会不利地影响完成的间隙填充的质量的介电沉积工艺仍存在需求。本发明针对介电膜沉积的这些和其他方面。
发明内容
本发明涉及一种用于制造半导体器件的形成氧化硅膜的方法。实施例包括形成可流动介电膜的方法,包括化学气相沉积(CVD)由硅前体形成的Si-N(H)-Si键,该硅前体具有与在远程等离子体中产生的自由基氮前体(例如—N、—NH、—NH2)反应的一个或多个Si-Si键。所沉积的膜被固化以将Si-N(H)-Si基团转换成氧化硅(例如Si-O-Si),从而在后沉积退火(例如蒸汽退火)期间增加膜的致密度。该方法能用于形成用于STI(浅沟槽隔离)结构的高质量氧化硅膜,但是将意识到,其具有较宽的应用。
实施例还包括在基板上沉积含硅和氮的膜的方法。该方法包括将含硅前体引入到含有基板的沉积室的步骤。含硅前体至少包括两个硅原子。该方法还包括使用位于沉积室外部的远程等离子体***产生至少一个自由基氮前体。此外,该方法还包括将自由基氮前体引入到其中自由基氮和含硅前体反应且在基板上沉积含硅和氮的膜的沉积室中。
实施例还包括在基板上形成氧化硅膜的方法。该方法包括在沉积室中提供基板和用耦合到沉积室的远程等离子体***产生激活的氮物种(例如氮氢自由基)。此外,该方法包括将含硅前体引入到沉积室中。含硅前体至少包括Si-Si键。该方法还包括将激活的氮物种引入到沉积室中,这里,激活的氮物种与含硅前体反应且在基板上沉积第一层膜。该第一层膜包括多个Si-N(H)-Si键。而且,该方法包括在蒸汽气氛中退火第一层膜和在基板上形成第二层膜。该第二层膜包括多个Si-O-Si键。
在以下的描述出列出了其他实施例和特征,且通过考察说明书本领域技术人员将明白部分该描述或者通过实践本发明可学习到部分该描述。可借助于说明书中描述的手段、组合和方法实现和获得本发明的特征和优点。
附图的简要描述
图1示意性示出了根据本发明实施例在硅前体中的Si-Si键与反应氮物种反应以形成含Si-N(H)-Si的组合物、和之后将该组合物氧化成含Si-O-Si组合物的化学反应过程;
图2是示出根据本发明实施例在基板上形成氧化硅膜的方法的简化流程图;
图3示意性示出了根据本发明实施例用于由乙硅烷或聚硅烷前体以及通过在远程等离子体中分解氨产生的自由基氮前体形成碳氮化硅Si:C:N:H的化学反应步骤;
图4是根据本发明实施例沉积可流动性的含硅和氮的膜的方法的简化流程图;
图5示意性示出了根据本发明实施例用于酸催化去除沉积的介电膜中的碳基物种的化学反应机理;
图6A-B示出了根据本发明实施例用于碱催化去除在如此沉积的介电膜中的碳基物种的化学反应机理;和
图7示出了根据本发明实施例用于在基板上形成氧化硅膜的示范性工艺***的截面图。
具体实施方式
本发明涉及一种用于制造半导体器件的形成氧化硅膜的方法。实施例包括形成可流动介电膜的化学气相沉积方法,该介电膜包括来自具有一个或多个Si-Si键的硅前体与在远程等离子体中形成的自由基氮前体(例如,—N、—NH,—NH2)的反应的Si-N(H)-Si键。该方法还包括通过后沉积退火(例如蒸汽退火)固化可流动介电膜以将Si-N(H)-Si键转换成更加致密的Si-O-Si键。在其它应用当中,该方法可用于形成高质量氧化硅间隙填充(例如形成STI结构)。
图1示意性示出了根据本发明实施例将硅前体中的Si-Si键转换成Si-N(H)-Si键之后膨胀地转换成Si-O-Si键的化学反应过程。该图仅仅是实例,这不应过度地限制此处权利要求的范围。本领域技术人员会意识到其他变化、改进和替换方式。如所示出的,化学反应是CVD(化学气相沉积)工艺,期间具有至少一个Si-Si键的含硅前体与由远程等离子体(例如,与可流动Si-N(H)-Si膜的沉积分离地形成的等离子体)的分解产生的自由基氮混合。该CVD工艺导致一个硅前体(或多个前体)中的Si-Si键转换成Si-N(H)-Si键。此时在随后的退火步骤中将Si-N(H)-Si键转换成Si-O-Si键,进行退火的环境是蒸汽(例如H2O蒸汽)环境。由于氧原子具有比氮原子更大的原子体积,因此在退火期间形成氧化硅会导致介电膜的膨胀。
上述CVD工艺包括将至少两种反应物单独引入到沉积室中,且使它们在预定条件下反应。在一个实施例中,第一反应物可以是选自由烷氧基乙硅烷、烷氧基—烷基乙硅烷、烷氧基—醋酸基乙硅烷和聚硅烷构成的组的一物种型前体。例如,烷氧基乙硅烷包括Si2(EtO)6乙氧基乙硅烷、Si2(MeO)6甲氧基乙硅烷、和Si6(MeO)12甲氧基环己基硅烷,这里Et表示乙基(C2H6)以及Me表示甲基(CH3)。在另一实例中,甲氧基—甲基乙硅烷包括Si2(EtO)4(Me)2四乙氧基二甲基乙硅烷、Si2(EtO)4(Et)2四乙氧基二乙基乙硅烷、Si2(EtO)2(Me)4二乙氧基四甲基乙硅烷、Si2(MeO)4(Me)2四甲氧基二甲基乙硅烷、和Si4O2(Me)8甲基环己基硅氧烷、Si6(MeO)6(Me)6甲氧基—甲基环己基硅烷、Si4O2(H2)4氢化—环己基硅氧烷。在再一实例中,烷氧基—醋酸基乙硅烷包括Si2(AcO)6醋酸基乙硅烷、Si2(Me)4(AcO)2四甲基—二醋酸乙硅烷、和Si2(Me)2(AcO)4二甲基—四醋酸乙硅烷,这里,Ac表示醋酸基。和在再一实例中,聚硅烷包括环戊硅烷或其他替代物。在不遇到用于CVD工艺的任何其他反应物的情况下,上述这些前体中的任一种都可提供到沉积室中。
在另一实施例中,用于上述CVD工艺的其它反应物是第二反应物,其包括由远程氨等离子体产生的自由基氮物种。例如,自由基氮物种可包括氮离子、氮氢自由基NHx,其中x=1或2。由于在这些以硅烷或聚硅烷基前体的分子结构中存在至少一个高度反应的Si-Si键,因此,除了氢氧基和碳基物种之外,CVD工艺会导致含有多种Si-N(H)-Si键的产物。例如,产物是沉积在基板上的碳氮化硅膜。由于存在这些氢氧基和碳基物种,因此CVD沉积的碳氮化硅膜是非晶的且是可流动的。
在再一实施例中,在晶片蒸汽环境中随后的热处理引起碳氮化硅膜和H2O蒸汽之间的另一化学反应。该反应是氧化过程,其中在碳氮化硅膜中的Si-N(H)-Si键被转换成Si-O-Si键,导致形成氧化硅膜。一种副产物包括NH3氨,其能通过对于室建立的排气***立即泵出。
图2是示出根据本发明实施例在基板上形成氧化硅膜的方法的简化流程图。如所示出的,该方法200利用图1中所描述的化学反应过程以形成氧化硅膜。示范性方法200包括非排它性的一系列步骤,可向其添加附加步骤(未示出)。本领域技术人员会意识到很多变化、改进和替换方式。在所示出的实施例中,方法200包括在沉积室中提供基板(210)。该方法200还包括将在其分子结构中具有至少一个Si-Si键的一种或多种含硅前体引入到沉积室中(220)。该方法还包括产生一种或多种自由基氮前体(230)。例如,一种或多种自由基氮前体在耦合到沉积室的远程氨等离子体***中产生。
该方法200还包括将一种或多种自由基氮前体引入到沉积室中以与一种或多种含硅前体反应(240),引起具有Si-N(H)-Si键的可流动性介电膜在基板上的沉积。此外,方法200可包括蒸汽退火以将CVD沉积的可流动性介电膜氧化成氧化硅膜(250)。该蒸汽氧化工艺(250)可包括由于将Si-N(H)-Si键转换成Si-O-Si键导致的膜膨胀,这与由于从CVD沉积的膜去除了一些氢氧基而导致的膜收缩相抵消。结果,平衡膜膨胀和收缩导致了致密的、无孔的氧化硅膜,其也降低了由于在沉积和退火期间引入了应力而导致破裂的可能性。
在一个实施例中,用于CVD工艺的一种或多种含硅前体包括在其分子结构中的多个氢氧基。氢氧基保持在CVD沉积的膜中,提供与常规SOG(旋涂玻璃)膜相似的膜的流动特性。由于流动特性,基于方法200的CVD沉积膜在沉积期间易于聚集在基板间隙或沟槽底部部分中,由此减少了在间隙填充或STI沟槽中心附近产生的孔。在另一实施例中,在其分子结构中具有至少一个Si-Si键的一种或多种含硅前体包括乙硅烷和/或聚硅烷前体。乙硅烷在其分子结构中具有单个的Si-Si单元,而聚硅烷具有多个Si-Si键。例如,使用具有不同取代基的乙硅烷,其包括烷氧基乙硅烷、烷氧基—烷基乙硅烷和烷氧基—醋酸基乙硅烷。在其他实例中,也可使用具有更高同系物的乙硅烷。当然,本领域技术人员会意识到在选择乙硅烷和聚硅烷前体时的很多替换方式、变化和改进。
上述的CVD沉积工艺与2006年5月30日提交的名称为“CHEMICALVAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDEUSING A SILICON CONTANTING PRECURSOR AND ATOMIC OXYGEN”的、Ingle等人共同转让的美国专利申请No.60/803,493中描述的工艺相似,在此引入其整体内容作为参考。但是,在方法200中,使用由氨的等离子体分解产生的自由基氮代替原子氧,以与一种或多种含硅前体反应,从而由于存在氢氧基(例如硅烷醇基)而导致具有流动特性的含硅和氮的膜。
如上所述,在方法200中使用的反应物种(例如—N、—NH、—NH2)可通过在远程等离子体***中引入氨(NH3)产生。远程等离子体***可包括耦合到沉积室的分离的室。用于将氨分解成NH/N/H自由基的等离子体条件包括:使用3kW至15kW范围内的RF功率以在从1Torr(托)至10托范围内的室压下、在室温至约200℃范围内的温度室温度下产生等离子体。在远程等离子体***中分解氨产生自由基氮前体,诸如氮氢自由基诸如NH或NH2。也可产生原子氢(H)自由基。例如,氮氢和氢自由基在方法200的步骤230中产生。自由基氮前体此时被传送到沉积室,该室中已经单独引入了一种或多种含硅前体。例如,反应氮前体可通过喷头传送,而硅前体通过多个带槽的管子引入。
图3示意性示出了根据本发明实施例用于由乙硅烷和/或聚硅烷前体与通过氨远程等离子体产生的自由基氮前体的反应形成碳氮化硅(Si:C:N:H)膜的化学反应步骤。图3是一个示意性实例且不应过度限制此处权利要求的范围。本领域技术人员将意识到其他变化、改进和替换方式。
如所示出的,氮氢NH自由基和氢H自由基在工艺310中通过氨等离子体产生。当氮氢NH自由基和氢H自由基在沉积室中遇到乙硅烷或聚硅烷前体时,乙硅烷或聚硅烷前体中高度反应的Si-Si键通常会***以形成与—NH2重新键合的硅—氢氧自由基,如图3的反应过程320中所示的。可选地,乙硅烷或聚硅烷前体中的Si-Si键会破裂以形成直接与—H重新键合的硅—氢氧自由基,如图3中一侧的过程325中所示的。当然,本领域技术人员将意识到很多种替换方式、变化和改进。
在所示出的实例中,与—NH2自由基键合的硅—氢氧基可通过释放醇基分解成硅—氮氢自由基。例如,在最初的含硅前体中的氢氧基捕获键合到氮原子的H原子以形成甲醇(CH3OH),如图3的过程330中所示的。所产生的该甲醇能通过真空泵容易地去除从而促进形成另外的甲醇。反应物的剩余部分变成包含具有两个不饱和键的Si-NH键的自由基。随后,两个不饱和键快速地重新键合以形成具有Si=NH双键的二甲基硅烷亚胺自由基,如图3的过程340中所示的。当然,本领域技术人员将意识到很多替换方式、变化和改进。
在另一实施例中,化学反应进一步包括在存在于含硅前体中的二甲基硅烷亚胺自由基和Si-C键之间的反应。如图3的过程350中所示,反应是其中二甲基硅烷亚胺自由基直接***到Si原子和C原子之间以产生碳氮化硅产物的键***过程。当然,本领域技术人员将意识到很多替换方式、变化和改进。
图4是示出根据本发明实施例沉积可流动的含硅和氮的膜的方法的简化流程图。该图仅仅是实例且不应当过度限制此处的权利要求的范围。本领域技术人员将意识到其他变化、改进和替换方式。如所示出的,方法400是CVD工艺,用于在基板上沉积具有流动特性的非晶碳氮化硅膜。方法400包括在沉积室中提供基板(410)。沉积室耦合到远程等离子体***。该方法400也可包括将氨引入到远程等离子体***中以由远程等离子体中氨的分解产生自由基氮前体。所产生的自由基氮前体可包括氮氢NH自由基和氢H自由基。当然,存在其他的替换方式、变化和改进。
此外,方法400包括将氮氢NH自由基和氢H自由基传送到沉积室(420)中。在一个实施例中,氮氢NH自由基和氢H自由基通过喷头被传送,该喷头流体地耦合沉积室和远程等离子体***。例如,反应氮自由基(和伴随载气)可通过挡板或喷头进入到沉积室,该挡板或喷头诸如在2007年5月29日提交的名称为“PROCESS CHAMBER FOR DIELECTRIC GAPFILL”的、Lubomirsky等人共同转让的美国专利申请序列No.11/754,924中示出的那种,在此引入其全部内容作为参考。
方法400还包括将具有至少一个Si-Si键的一种或多种含硅前体引入到沉积室中(430)。在一个实施例中,含硅前体被单独导向到沉积室中。例如,这些前体来自一个或多个分离的CVD气体源,且在被引入到沉积室之前不会遇到任何的氨等离子体。在另一实施例中,含硅前体包括在其分子结构中具有单个Si-Si单元的乙硅烷和/或具有多个Si-Si单元的聚硅烷。例如,含硅前体是具有如图3中所示的乙基羟基的乙硅烷。
方法400还包括实施CVD工艺以在沉积室中的基板上沉积可流动碳氮化硅膜(440)。由于含硅前体在沉积室中遇到氮氢NH自由基和氢H自由基,因此在前体中的Si-Si键高度反应以使得具有Si-Si键的乙硅烷或聚硅烷前体破裂成硅—氮氢自由基。而且,在甲醇分解和重新键合反应过程中,硅—氮氢自由基会转变成二甲基硅烷亚胺自由基。二甲基硅烷亚胺自由基此时通过键***过程与前体中的Si-C键反应以形成碳氮化硅分子。
例如在沉积室中在以下处理条件下进行CVD工艺440:1)前体流速被设置为1mgm/分钟至15gm/分钟;2)将沉积室保持在约1m托至约600托范围内的压力下;3)室温被控制在约0℃至约400℃之间。形成硅—氮氢自由基在图3的过程320期间发生。包括在上述CVD工艺440中的其它化学反应过程可包括图3中示出的反应步骤330、340或350。获得的碳氮化硅分子此时沉积在基板上以形成固体膜。该膜实质上是非晶的且通过在其分子结构中的氢氧基而具有流动特性。
可流动的沉积膜形成了具有很低密度的无孔间隙填充,用于器件的介电隔离。方法400还包括在氧化环境中退火可流动碳氮化硅膜以形成致密度氧化硅膜(450)。与其他可流动介电膜相似,诸如常规的SOG膜,高温退火引起氢氧基和剩余的碳分解成被立即泵出的水和/或甲醇蒸气,导致明显的膜收缩和致密化。在特定实施例中,退火工艺450是在蒸汽(水蒸汽)气氛内在氧化环境中的热退火。例如,在从约200℃至高达约1050℃的基板温度下进行蒸汽退火。在退火期间的水蒸气压力约在从1托至1atm(即约760托)的范围内。
在替换实施例中,退火工艺450是将基板保持在室温至高达约600℃下的臭氧处理。臭氧处理可进一步与UV光照射结合。在另一替换实施例中,退火工艺450是包括从室温至约900℃的分子氧处理或从室温至高达约600℃的原子氧处理的膜固化处理。当然,本领域技术人员将意识到很多替换方式、变化和改进。
在另一特定实施例中,由于存在形成于如此沉积的碳氮化硅膜中的Si-N(H)-Si键,氧化工艺450将引起这些Si-N(H)-Si键向Si-O-Si键的转换。由于氧比氮大的原子体积,该转换固有地膨胀了该膜。例如,键转换过程与图1中描述的化学反应过程相同。该膜膨胀抵消了由于未反应的碳和OH物种的损失导致的膜收缩。平衡膜膨胀和收缩的净效果导致较高质量的氧化硅膜,其具有较少整体收缩,但是具有增加的膜密度,同时保持无孔间隙填充。
在另一实施例中,退火可流动碳氮化硅膜在包括水蒸气和算整齐的气氛中进行。由于CVD沉积膜包括烷氧基取代的乙硅烷,因此酸性环境在沉积期间有助于催化未反应有机部分的的反应。图5示意性示出了根据本发明实施例酸性催化剂处理沉积的介电膜的化学绘图(chemical drawing)。该图仅是实例且不应当过度限制此处权利要求的范围。本领域技术人员将意识到其他变化、改进和替换方式。如所示出的,通过在退火期间添加的酸性蒸汽,未反应的氢氧基经历酸的亲电子侵蚀,即通过从氧原子取一个电子到氢原子,来自酸的H+离子会将未反应的CH3O基团转换成反应的CH3OH基团。这在图5的过程510中示出。
此时水蒸气与反应的CH3OH基团反应,如过程520中所示。反应导致形成硅烷醇Si-OH基团且从膜中释放了甲醇CH3OH分子。所形成的硅烷醇Si-OH基团的冷凝(即,当组合两个硅烷醇Si-OH基团时通过释放水)导致在膜中形成氧化硅结构。在一个实施例中,用酸处理退火有助于通过去除碳物种而增加膜密度且经由其他方式通过氢氧基的损失有助于降低孔洞形成的可能性。当然,存在其他替换方式、变形和改进。
在其他实施例中,退火可流动碳氮化硅膜在包括水蒸气和碱蒸汽诸如氨(NH3)的气氛中进行。由于CVD沉积膜包括烷氧基取代的乙硅烷,因此碱性环境有助于在沉积期间催化未反应有机部分的反应。
图6A—6B示意性示出了用于所沉积介电膜碱性催化处理的两个化学反应机理。于图6A包括中示出的第一个机理包括通过包括氨的碱性蒸汽进行的烷基的亲核侵蚀。该机理中,硅烷氧基的烷基部分传送给氨,在传送期间其也释放质子(H+)。由于烷基的传送也包括水分子,因此其贡献出质子以取代剩下且形成硅烷醇(-Si-OH)基的烷基。在随后的反应中,会发生硅烷醇冷凝反应以在固化的介电氧化膜中将-Si-OH基转换成-Si-O-Si-基。
在图6B中示出的第二个反应机理包括通过包括氨的碱性蒸汽在硅烷氧中的硅原子的亲核侵蚀。反应包括用氨分子取代贴附到硅的烷氧基以形成甲硅烷基胺。烷氧基与从水分子贡献出的质子反应以形成甲醇。在随后的反应中,甲硅烷基胺可被水解以形成硅烷醇并重新产生氨。此时,与图6A中描述的机理相似,硅烷醇基团经历冷凝反应,在固化的介电氧化膜中将-Si-OH基转换成-Si-O-Si基。
应当理解,在图6A—6B中描述的碱性催化反应原理仅是可能的反应机理中的两个实例,且不应过度地限制此处权利要求的范围。本领域技术人员将意识到其他变化、改进和替换方式,用于如此沉积的硅烷氧物种的碱性催化处理。
用于从可流动有机硅膜碱性催化去除碳(诸如烷基和烷氧基)示范性处理条件可包括在包括水和碱性蒸汽的环境中膜的后沉积固化。例如,如果碱性蒸汽包括氨作为碱性催化剂,则所沉积的膜可被加热至约300℃同时被暴露到压力为约1托至约40托的潮湿氨气氛中达约2至约5分钟。在另外的实施例中,氨气氛也可包括氧(O2)气和/或由氮前体(例如NH3)的远程等离子体离解产生的原子氮(N)。
现在参考图7,示出了根据本发明实施例的示范性处理***700的截面图。***700包括沉积室701,在其中前体化学反应且在基板晶片702上沉积可流动介电膜。晶片702(例如200mm、300mm、400mm等直径的半导体基板晶片)可耦合到可旋转基板底座704上,该底座可被垂直传送以将基板702定位成更接近或更远离上方的前体分配***706。基座可以以约1rpm至约2000rpm(例如约10rpm至约120rpm)的旋转速度旋转基板晶片。基座可以以例如从约0.5mm至约100mm的距离从前体分配***的侧面管子708垂直传送基板。
前体分配***706包括多个径向分布侧面管子708,其每一个都具有两个不同长度中的一个。在另外的实施例(未示出)中,可去掉侧面管子以留下在沉积室的壁附近分布的开口环。前体通过这些开口流入到室中。
分配***706也包括圆锥形顶部挡板710,其与基板底座704中心共轴。流体通路712可通过挡板710中心延伸以提供具有与向下流到挡板导向表面外部的前体成分不同的前体或载气。
挡板710外部表面可被管道714包围,该管道714从被设置在沉积室701上方的反应物种产生***(未示出)导向反应前体。导管714可以是具有在挡板710外部表面上打开的一端和耦合到反应物种产生***的相对一端的直线圆形管。
反应物种产生***可以是远程等离子体产生***(RPS),其通过将更稳定的起始材料暴露到等离子体产生反应物种。例如,起始材料可以是包括分子氧(或臭氧)的混合物。该起始材料从RPS暴露到等离子体引起一部分分子氧分离成原子氧、将在较低温度下(例如低于100℃)与有机硅前体(例如四甲基原硅酸酯(TMOS),八甲基环四硅氧烷(OMCTS))化学反应的高度反应自由基物种,以在基板表面上形成可流动介电膜。由于在反应物种产生***中产生的反应物种通常即使在室温下也可与其它沉积前体高度反应,因此在隔离的气体混合物中向下游导管714传输并在与其他沉积前体混合之前通过挡板710将其分配到反应室701中。
***700也可包括缠绕在沉积室701的圆顶716周围的RF线圈(未示出)。这些线圈能在沉积室701中产生电感耦合等离子体以进一步增强反应物种前体和其他前体的反应性从而在基板上沉积流体介电膜。例如,含有通过挡板710分配到室中的反应原子氧和自通路712和/或一个或多个侧面管子708的有机硅前体的气流可通过RF线圈导向到形成在基板702上方的等离子体中。原子氧和有机硅前体甚至在低温下也能在等离子体中快速反应以在基板表面上形成高度可流动的介电膜。
基板表面自身也可通过底座704旋转以增强所沉积膜的均匀性。旋转平面与晶片沉积表面平行,或者两个平面部分地不对准。当平面不对准时,基板704的旋转会产生摇摆,这会产生沉积表面上方空间内的流体扰动。在一些情况下,这种扰动也会增强沉积在基板表面上的介电膜的均匀性。基座704也包括产生真空吸附的凹槽和/或其它结构,从而当其移动时将晶片保持在底座上适当位置处。典型的室内沉积压力是从约0.05托至约200托范围内的总室压(例如1托),这使得真空吸附以保持晶片在适当位置是可行的。
底座旋转可通过设置在沉积室701下方的发动机718激励且其可旋转耦合到支撑底座704的轴720。轴720也包括内部通路(未示出),其运载自沉积室(未示出)下方的冷却/加热***的冷却流体和/或电线至底座704。这些通路可从底座中心向***延伸以提供对上方基板晶片702的均匀冷却和/或加热。其也被设计成当轴720和基板底座704旋转和/或传送时进行操作。例如,可操作冷却***以当底座旋转时在沉积可流动氧化膜期间保持基板晶片702的温度低于100℃。
***700还包括设置在圆顶716上方的照射***722。自照明***722的灯(未示出)可照射下方的基板702以烘焙或退火基板上的所沉积膜。在沉积期间灯也可被激励以增强膜前体或所沉积膜中的反应。至少圆顶716的顶部部分由能传输从灯发出的一部分光的半透明材料制成。
这里,提供了值的范围,应当明白,对于下限单位的十分之一,除了上下文清楚说明,也特别公开了上限和下限范围之间的每一个***值。所述范围内的任何所述值或者***值和在所述范围内的任何其他所述的或***的值之间的每个较小范围都包括在本发明中。这些较小范围的上限和下限在该范围内是单独地包括或排除的,且其中两个极限中的任一个、任一个都不、或两个都包括在较小范围内的每个范围也包括在本发明内,以所述范围内任何特别排除范围为依据。这里所述的范围包括一个或两个极限,排除了这些所包括极限中的任一个或两个的范围也包括在本发明中。
如在此以及在所附的权利要求中所使用的,单数形式的“一个”和“那个”包括复数参考,除非上下文清楚另外说明。由此,例如,参考“一个工艺”包括多个这种工艺且参考“那个管子”包括参考一种或多种管子以及本领域技术人员公知的其等价物,等等。
而且,词语“包括”、“包括有”、“含有”、“具有”和“包含”,当用在该说明书以及下面的权利要求中时旨在指定存在所述特征、整体、部件或步骤,但是其不排除存在或附加一个或多个其他部件、整体、部件、步骤、动作或组合。
Claims (39)
1.一种在基板上沉积含硅和氮的膜的方法,该方法包括:
引入含硅前体到含有基板的沉积室中,其中所述含硅前体包括至少两个硅原子;
通过设置在所述沉积室外部的远程等离子体***产生至少一种自由基氮前体;和
引入自由基氮前体到沉积室中,其中自由基氮和含硅前体反应且在基板上沉积含硅和氮的膜。
2.如权利要求1所述的方法,其中产生原子氮包括将氨暴露到在所述远程等离子体***中的等离子体,其中至少一部分氨分解为所述自由基氮前体。
3.如权利要求1所述的方法,其中所述自由基氮前体具有化学式NHx,这里x是1或2。
4.如权利要求1所述的方法,其中所述含硅前体包括乙硅烷前体或聚硅烷前体。
5.如权利要求1所述的方法,其中所述含硅前体选自由烷氧基乙硅烷、烷氧基—烷基乙硅烷和聚硅烷构成的组。
6.如权利要求1所述的方法,其中所述含硅和氮的膜包括碳氮化硅膜。
7.如权利要求1所述的方法,其中所述含硅和氮的膜包括含Si-N(H)-Si键的膜。
8.如权利要求1所述的方法,其中所述方法还包括对所述含硅和氮的膜进行退火以形成氧化硅膜。
9.如权利要求8所述的方法,其中在包括蒸汽的气氛中执行所述退火。
10.如权利要求8所述的方法,其中在包括酸性蒸汽的气氛中执行所述退火。
11.如权利要求8所述的方法,其中在从约20℃至约900℃范围内的温度下执行所述退火。
12.如权利要求8所述的方法,其中在包括臭氧的气氛中执行所述退火。
13.如权利要求12所述的方法,其中所述退火还包括在从约20℃至约600℃范围内的温度下将所述基板暴露到紫外光。
14.如权利要求8所述的方法,其中在包括分子氧的气氛中执行所述退火。
15.如权利要求8所述的方法,其中在包括原子氧的气氛中在从约20℃至约600℃范围内的温度下执行所述退火。
16.如权利要求8所述的方法,其中在从约200℃到约1050℃范围的温度下执行所述退火。
17.一种在基板上形成氧化硅膜的方法,该方法包括:
在沉积室中提供基板;
通过耦合到沉积室的远程等离子体***产生多个氢氮自由基;
将含硅前体引入到沉积室,所述含硅前体包括至少一个Si-Si键;
将多种氮氢自由基引入到沉积室,其中所述氮氢自由基和含硅前体反应且在所述基板上沉积第一层膜,所述第一层膜包括多个Si-N(H)-Si键;
在蒸汽气氛中对所述第一层膜进行退火;和
在所述基板上形成第二层膜,所述第二层膜包括多个Si-O-Si键。
18.如权利要求17所述的方法,其中产生多个氮氢自由基包括将氨暴露到所述远程等离子体***中的等离子体,其中至少一部分氨分解成所述多个氢氮自由基。
19.如权利要求17所述的方法,其中所述含硅前体包括乙硅烷前体或聚硅烷前体。
20.如权利要求17所述的方法,其中所述第一层膜还包括具有可流动特性的氢氧基。
21.如权利要求17所述的方法,其中对所述第一层膜进行退火在从约20℃至约900℃范围内的温度下执行。
22.如权利要求17所述的方法,其中所述蒸汽气氛包括水蒸汽和酸性蒸汽。
23.如权利要求22所述的方法,其中形成所述第二层膜包括使用所述水蒸汽以将所述第一层膜中多个Si-N(H)-Si键的至少一部分转换成多个Si-O-Si键的至少第一部分。
24.如权利要求22所述的方法,其中形成第二层膜还包括使用酸性蒸汽以催化未反应氢氧基与水蒸气的反应以形成反应的OH基,导致多个Si-O-Si键的至少第二部分。
25.如权利要求22所述的方法,其中所述酸性蒸汽包括氢氯酸或醋酸。
26.如权利要求17所述的方法,其中所述第二层膜具有比所述第一层膜高的密度。
27.一种固化在基板上的氧化硅膜的方法,该方法包括:
提供半导体处理室和基板;
形成覆盖至少一部分所述基板的氧化硅层;所述氧化硅层包括碳物种作为形成的副产物;
将碱性蒸汽引入到所述半导体处理室中,所述碱性蒸汽与氧化硅层反应以从氧化硅层去除碳物种;和
从所述半导体处理室去除碱性蒸汽。
28.如权利要求27所述的方法,其中所述碱性蒸汽包括氨。
29.如权利要求27所述的方法,其中所述硅层使用烷氧基硅烷工艺沉积。
30.如权利要求27所述的方法,其中所述氧化硅层使用等离子体CVD工艺沉积。
31.如权利要求27所述的方法,其中引入碱性蒸汽还包括将氨气流入到所述半导体处理室中。
32.如权利要求27所述的方法,其中所述碱性蒸汽用作催化剂以完成所述氧化硅层中的反应。
33.如权利要求27所述的方法,其中所述蒸汽是酸和水的混合物。
34.如权利要求27所述的方法,其中所述蒸汽还包括分子氧。
35.如权利要求27所述的方法,其中所述蒸汽还包括远程产生的自由基原子氮。
36.如权利要求27所述的方法,其中碱性蒸汽和氧化硅层之间的所述反应在从约60℃至约600℃之间进行。
37.如权利要求26所述的方法,其中所述反应在约300℃下执行。
38.如权利要求27所述的方法,其中在与氧化硅层反应期间所述处理室具有约1托至760托的压力。
39.如权利要求38所述的方法,其中所述处理室具有约40托的压力。
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---|---|---|---|---|
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Families Citing this family (474)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6502614B1 (en) * | 1999-05-25 | 2003-01-07 | Silverbrook Research Pty Ltd | Printed media transverse binder |
US20040253777A1 (en) * | 2001-08-30 | 2004-12-16 | Hidenori Miyoshi | Method and apparatus for forming film |
US7825038B2 (en) * | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
US7902080B2 (en) * | 2006-05-30 | 2011-03-08 | Applied Materials, Inc. | Deposition-plasma cure cycle process to enhance film quality of silicon dioxide |
US8232176B2 (en) * | 2006-06-22 | 2012-07-31 | Applied Materials, Inc. | Dielectric deposition and etch back processes for bottom up gapfill |
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US7943531B2 (en) * | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
US7867923B2 (en) | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
US8357435B2 (en) | 2008-05-09 | 2013-01-22 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US20100081293A1 (en) * | 2008-10-01 | 2010-04-01 | Applied Materials, Inc. | Methods for forming silicon nitride based film or silicon carbon based film |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US7935643B2 (en) * | 2009-08-06 | 2011-05-03 | Applied Materials, Inc. | Stress management for tensile films |
US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US7989365B2 (en) * | 2009-08-18 | 2011-08-02 | Applied Materials, Inc. | Remote plasma source seasoning |
US8329587B2 (en) * | 2009-10-05 | 2012-12-11 | Applied Materials, Inc. | Post-planarization densification |
US20110136347A1 (en) * | 2009-10-21 | 2011-06-09 | Applied Materials, Inc. | Point-of-use silylamine generation |
KR20110057645A (ko) * | 2009-11-24 | 2011-06-01 | 삼성전자주식회사 | 절연막 형성 방법 및 이를 포함하는 트랜지스터 형성 방법 |
US20110151677A1 (en) * | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
US20110159213A1 (en) * | 2009-12-30 | 2011-06-30 | Applied Materials, Inc. | Chemical vapor deposition improvements through radical-component modification |
US8329262B2 (en) * | 2010-01-05 | 2012-12-11 | Applied Materials, Inc. | Dielectric film formation using inert gas excitation |
KR20110096843A (ko) * | 2010-02-23 | 2011-08-31 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
US8748259B2 (en) * | 2010-03-02 | 2014-06-10 | Applied Materials, Inc. | Method and apparatus for single step selective nitridation |
US8563445B2 (en) * | 2010-03-05 | 2013-10-22 | Applied Materials, Inc. | Conformal layers by radical-component CVD |
US8236708B2 (en) | 2010-03-09 | 2012-08-07 | Applied Materials, Inc. | Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor |
US7994019B1 (en) | 2010-04-01 | 2011-08-09 | Applied Materials, Inc. | Silicon-ozone CVD with reduced pattern loading using incubation period deposition |
US8476142B2 (en) | 2010-04-12 | 2013-07-02 | Applied Materials, Inc. | Preferential dielectric gapfill |
US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
US9892917B2 (en) | 2010-04-15 | 2018-02-13 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
US8956983B2 (en) | 2010-04-15 | 2015-02-17 | Novellus Systems, Inc. | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
US9076646B2 (en) | 2010-04-15 | 2015-07-07 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
US9373500B2 (en) | 2014-02-21 | 2016-06-21 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
US8524004B2 (en) | 2010-06-16 | 2013-09-03 | Applied Materials, Inc. | Loadlock batch ozone cure |
US9685320B2 (en) | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
JP5524152B2 (ja) * | 2010-12-06 | 2014-06-18 | 株式会社東芝 | 基板処理装置、及び成膜システム |
US20120177846A1 (en) * | 2011-01-07 | 2012-07-12 | Applied Materials, Inc. | Radical steam cvd |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
US8647993B2 (en) * | 2011-04-11 | 2014-02-11 | Novellus Systems, Inc. | Methods for UV-assisted conformal film deposition |
US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US8617989B2 (en) | 2011-09-26 | 2013-12-31 | Applied Materials, Inc. | Liner property improvement |
US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9117877B2 (en) * | 2012-01-16 | 2015-08-25 | Globalfoundries Inc. | Methods of forming a dielectric cap layer on a metal gate structure |
US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
US20130187236A1 (en) | 2012-01-20 | 2013-07-25 | Globalfoundries Inc. | Methods of Forming Replacement Gate Structures for Semiconductor Devices |
US8871656B2 (en) * | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
TWI595112B (zh) | 2012-10-23 | 2017-08-11 | 蘭姆研究公司 | 次飽和之原子層沉積及保形膜沉積 |
SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
JP6538300B2 (ja) | 2012-11-08 | 2019-07-03 | ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated | 感受性基材上にフィルムを蒸着するための方法 |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9612521B2 (en) | 2013-03-12 | 2017-04-04 | Applied Materials, Inc. | Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
US9632411B2 (en) | 2013-03-14 | 2017-04-25 | Applied Materials, Inc. | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
US9417515B2 (en) | 2013-03-14 | 2016-08-16 | Applied Materials, Inc. | Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor |
US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
US9824881B2 (en) | 2013-03-14 | 2017-11-21 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US9564309B2 (en) | 2013-03-14 | 2017-02-07 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US20140273531A1 (en) * | 2013-03-14 | 2014-09-18 | Asm Ip Holding B.V. | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES |
US20140329027A1 (en) * | 2013-05-02 | 2014-11-06 | Applied Materials, Inc. | Low temperature flowable curing for stress accommodation |
WO2014210613A1 (en) | 2013-06-29 | 2014-12-31 | Plasmasi, Inc. | Method for deposition of high-performance coatings and encapsulated electronic devices |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9190263B2 (en) | 2013-08-22 | 2015-11-17 | Asm Ip Holding B.V. | Method for forming SiOCH film using organoaminosilane annealing |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US9543140B2 (en) | 2013-10-16 | 2017-01-10 | Asm Ip Holding B.V. | Deposition of boron and carbon containing materials |
US9576790B2 (en) | 2013-10-16 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of boron and carbon containing materials |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US9401273B2 (en) | 2013-12-11 | 2016-07-26 | Asm Ip Holding B.V. | Atomic layer deposition of silicon carbon nitride based materials |
US9214334B2 (en) | 2014-02-18 | 2015-12-15 | Lam Research Corporation | High growth rate process for conformal aluminum nitride |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9478411B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS |
US9478438B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9576792B2 (en) | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
US9362107B2 (en) | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9520301B2 (en) | 2014-10-21 | 2016-12-13 | Samsung Electronics Co., Ltd. | Etching method using plasma, and method of fabricating semiconductor device including the etching method |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
US9896326B2 (en) | 2014-12-22 | 2018-02-20 | Applied Materials, Inc. | FCVD line bending resolution by deposition modulation |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10526701B2 (en) | 2015-07-09 | 2020-01-07 | Lam Research Corporation | Multi-cycle ALD process for film uniformity and thickness profile modulation |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9947576B2 (en) * | 2015-07-13 | 2018-04-17 | Applied Materials, Inc. | UV-assisted material injection into porous films |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US10410857B2 (en) | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
US9812319B1 (en) * | 2016-07-06 | 2017-11-07 | Asm Ip Holding B.V. | Method for forming film filled in trench without seam or void |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (ko) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10858727B2 (en) | 2016-08-19 | 2020-12-08 | Applied Materials, Inc. | High density, low stress amorphous carbon film, and process and equipment for its deposition |
US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10062561B2 (en) * | 2016-11-01 | 2018-08-28 | Applied Materials, Inc. | High-pressure annealing and reducing wet etch rates |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
WO2018191484A1 (en) | 2017-04-13 | 2018-10-18 | Applied Materials, Inc. | Method and apparatus for deposition of low-k films |
US10017856B1 (en) | 2017-04-17 | 2018-07-10 | Applied Materials, Inc. | Flowable gapfill using solvents |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US11056353B2 (en) | 2017-06-01 | 2021-07-06 | Asm Ip Holding B.V. | Method and structure for wet etch utilizing etch protection layer comprising boron and carbon |
KR102574914B1 (ko) | 2017-06-02 | 2023-09-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 보론 카바이드 하드마스크의 건식 스트리핑 |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US20180363133A1 (en) * | 2017-06-16 | 2018-12-20 | Applied Materials, Inc. | Method and Apparatus for Void Free SiN Gapfill |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
US10234630B2 (en) | 2017-07-12 | 2019-03-19 | Applied Materials, Inc. | Method for creating a high refractive index wave guide |
US10269571B2 (en) | 2017-07-12 | 2019-04-23 | Applied Materials, Inc. | Methods for fabricating nanowire for semiconductor applications |
US10179941B1 (en) | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
WO2019032457A1 (en) * | 2017-08-08 | 2019-02-14 | Applied Materials, Inc. | METHODS AND APPARATUSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
JP6947914B2 (ja) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧高温下のアニールチャンバ |
US10096516B1 (en) | 2017-08-18 | 2018-10-09 | Applied Materials, Inc. | Method of forming a barrier layer for through via applications |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP7274461B2 (ja) | 2017-09-12 | 2023-05-16 | アプライド マテリアルズ インコーポレイテッド | 保護バリア層を使用して半導体構造を製造する装置および方法 |
US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
US10872762B2 (en) * | 2017-11-08 | 2020-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming silicon oxide layer and semiconductor structure |
CN117936420A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送*** |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
CN111373519B (zh) | 2017-11-16 | 2021-11-23 | 应用材料公司 | 高压蒸气退火处理设备 |
JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧処理システムのためのコンデンサシステム |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
KR102633318B1 (ko) | 2017-11-27 | 2024-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 청정 소형 구역을 포함한 장치 |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
KR102649241B1 (ko) | 2018-01-24 | 2024-03-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 어닐링을 사용한 심 힐링 |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
KR20230079236A (ko) | 2018-03-09 | 2023-06-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
US10580645B2 (en) | 2018-04-30 | 2020-03-03 | Asm Ip Holding B.V. | Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US20190376178A1 (en) * | 2018-06-11 | 2019-12-12 | Versum Materials Us, Llc | Compositions and Methods Using Same for Deposition of Silicon-Containing Film |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
TW202409324A (zh) | 2018-06-27 | 2024-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
TW202405221A (zh) | 2018-06-27 | 2024-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
TWI751420B (zh) | 2018-06-29 | 2022-01-01 | 荷蘭商Asm知識產權私人控股有限公司 | 薄膜沉積方法 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的***及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
JP7179172B6 (ja) | 2018-10-30 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 半導体用途の構造体をエッチングするための方法 |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
SG11202103763QA (en) | 2018-11-16 | 2021-05-28 | Applied Materials Inc | Film deposition using enhanced diffusion process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP7509548B2 (ja) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
SG11202111962QA (en) | 2019-05-01 | 2021-11-29 | Lam Res Corp | Modulated atomic layer deposition |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210078405A (ko) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
KR20210089079A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 채널형 리프트 핀 |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
KR20210145080A (ko) | 2020-05-22 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 과산화수소를 사용하여 박막을 증착하기 위한 장치 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202202649A (zh) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
US11658026B2 (en) | 2020-10-23 | 2023-05-23 | Applied Materials, Inc. | Conformal silicon oxide film deposition |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
KR20220081905A (ko) | 2020-12-09 | 2022-06-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 증착용 실리콘 전구체 |
CN114639631A (zh) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | 跳动和摆动测量固定装置 |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Family Cites Families (259)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4147571A (en) * | 1977-07-11 | 1979-04-03 | Hewlett-Packard Company | Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system |
FR2598520B1 (fr) * | 1986-01-21 | 1994-01-28 | Seiko Epson Corp | Pellicule protectrice minerale |
US4818326A (en) * | 1987-07-16 | 1989-04-04 | Texas Instruments Incorporated | Processing apparatus |
US4816098A (en) * | 1987-07-16 | 1989-03-28 | Texas Instruments Incorporated | Apparatus for transferring workpieces |
US4931354A (en) * | 1987-11-02 | 1990-06-05 | Murata Manufacturing Co., Ltd. | Multilayer printed circuit board |
JPH03257182A (ja) * | 1990-03-07 | 1991-11-15 | Hitachi Ltd | 表面加工装置 |
US5016332A (en) * | 1990-04-13 | 1991-05-21 | Branson International Plasma Corporation | Plasma reactor and process with wafer temperature control |
US5436172A (en) * | 1991-05-20 | 1995-07-25 | Texas Instruments Incorporated | Real-time multi-zone semiconductor wafer temperature and process uniformity control system |
US5426076A (en) * | 1991-07-16 | 1995-06-20 | Intel Corporation | Dielectric deposition and cleaning process for improved gap filling and device planarization |
JP3238744B2 (ja) * | 1992-05-15 | 2001-12-17 | 正俊 右高 | 絶縁膜の製造方法及びこの絶縁膜を使用する半導体装置の製造方法 |
US5271972A (en) | 1992-08-17 | 1993-12-21 | Applied Materials, Inc. | Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity |
JP3216266B2 (ja) * | 1992-09-22 | 2001-10-09 | ソニー株式会社 | 平坦化絶縁膜の製造方法 |
US5393708A (en) | 1992-10-08 | 1995-02-28 | Industrial Technology Research Institute | Inter-metal-dielectric planarization process |
JPH07176528A (ja) * | 1993-11-02 | 1995-07-14 | Nippon Steel Corp | 半導体装置における絶縁膜の製造方法 |
US5587014A (en) | 1993-12-22 | 1996-12-24 | Sumitomo Chemical Company, Limited | Method for manufacturing group III-V compound semiconductor crystals |
US5679152A (en) | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
JPH07316823A (ja) * | 1994-05-31 | 1995-12-05 | Sony Corp | プラズマcvd装置およびプラズマcvd方法 |
JPH0822986A (ja) * | 1994-07-05 | 1996-01-23 | Sony Corp | 絶縁膜の成膜方法 |
US5468687A (en) | 1994-07-27 | 1995-11-21 | International Business Machines Corporation | Method of making TA2 O5 thin film by low temperature ozone plasma annealing (oxidation) |
US5576071A (en) | 1994-11-08 | 1996-11-19 | Micron Technology, Inc. | Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds |
JPH08148559A (ja) | 1994-11-15 | 1996-06-07 | Fujitsu Ltd | 絶縁膜を有する半導体装置の製造方法 |
US5530293A (en) | 1994-11-28 | 1996-06-25 | International Business Machines Corporation | Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits |
US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
US5786263A (en) * | 1995-04-04 | 1998-07-28 | Motorola, Inc. | Method for forming a trench isolation structure in an integrated circuit |
JPH09237785A (ja) | 1995-12-28 | 1997-09-09 | Toshiba Corp | 半導体装置およびその製造方法 |
US6070551A (en) | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
US5827783A (en) | 1996-08-23 | 1998-10-27 | Mosel Vitelic, Inc. | Stacked capacitor having improved charge storage capacity |
US5935340A (en) | 1996-11-13 | 1999-08-10 | Applied Materials, Inc. | Method and apparatus for gettering fluorine from chamber material surfaces |
US5873781A (en) | 1996-11-14 | 1999-02-23 | Bally Gaming International, Inc. | Gaming machine having truly random results |
FR2759362B1 (fr) * | 1997-02-10 | 1999-03-12 | Saint Gobain Vitrage | Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention |
US6090723A (en) * | 1997-02-10 | 2000-07-18 | Micron Technology, Inc. | Conditioning of dielectric materials |
US5937308A (en) * | 1997-03-26 | 1999-08-10 | Advanced Micro Devices, Inc. | Semiconductor trench isolation structure formed substantially within a single chamber |
US6090442A (en) | 1997-04-14 | 2000-07-18 | University Technology Corporation | Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry |
US6551665B1 (en) | 1997-04-17 | 2003-04-22 | Micron Technology, Inc. | Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers |
US5937323A (en) * | 1997-06-03 | 1999-08-10 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-k HDP-CVD processing |
AUPO748097A0 (en) * | 1997-06-20 | 1997-07-17 | Commonwealth Scientific And Industrial Research Organisation | Alkene borates |
US6207587B1 (en) * | 1997-06-24 | 2001-03-27 | Micron Technology, Inc. | Method for forming a dielectric |
TW416100B (en) | 1997-07-02 | 2000-12-21 | Applied Materials Inc | Control of oxygen to silane ratio in a seasoning process to improve particle performance in an HDP-CVD system |
US6114219A (en) | 1997-09-15 | 2000-09-05 | Advanced Micro Devices, Inc. | Method of manufacturing an isolation region in a semiconductor device using a flowable oxide-generating material |
US6024044A (en) * | 1997-10-09 | 2000-02-15 | Applied Komatsu Technology, Inc. | Dual frequency excitation of plasma for film deposition |
US6624064B1 (en) | 1997-10-10 | 2003-09-23 | Applied Materials, Inc. | Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application |
US6087243A (en) * | 1997-10-21 | 2000-07-11 | Advanced Micro Devices, Inc. | Method of forming trench isolation with high integrity, ultra thin gate oxide |
US6009830A (en) * | 1997-11-21 | 2000-01-04 | Applied Materials Inc. | Independent gas feeds in a plasma reactor |
KR100253079B1 (ko) | 1997-12-01 | 2000-04-15 | 윤종용 | 반도체 장치의 트렌치 격리 형성 방법 |
US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6156394A (en) | 1998-04-17 | 2000-12-05 | Optical Coating Laboratory, Inc. | Polymeric optical substrate method of treatment |
US6068884A (en) | 1998-04-28 | 2000-05-30 | Silcon Valley Group Thermal Systems, Llc | Method of making low κ dielectric inorganic/organic hybrid films |
US6165834A (en) | 1998-05-07 | 2000-12-26 | Micron Technology, Inc. | Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell |
US6509283B1 (en) * | 1998-05-13 | 2003-01-21 | National Semiconductor Corporation | Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon |
US6146970A (en) | 1998-05-26 | 2000-11-14 | Motorola Inc. | Capped shallow trench isolation and method of formation |
US6667553B2 (en) | 1998-05-29 | 2003-12-23 | Dow Corning Corporation | H:SiOC coated substrates |
US6461970B1 (en) | 1998-06-10 | 2002-10-08 | Micron Technology, Inc. | Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby |
US6302964B1 (en) | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6014979A (en) | 1998-06-22 | 2000-01-18 | Applied Materials, Inc. | Localizing cleaning plasma for semiconductor processing |
US6406677B1 (en) * | 1998-07-22 | 2002-06-18 | Eltron Research, Inc. | Methods for low and ambient temperature preparation of precursors of compounds of group III metals and group V elements |
US6197658B1 (en) * | 1998-10-30 | 2001-03-06 | Taiwan Semiconductor Manufacturing Company | Sub-atmospheric pressure thermal chemical vapor deposition (SACVD) trench isolation method with attenuated surface sensitivity |
US6245690B1 (en) * | 1998-11-04 | 2001-06-12 | Applied Materials, Inc. | Method of improving moisture resistance of low dielectric constant films |
US6121130A (en) | 1998-11-16 | 2000-09-19 | Chartered Semiconductor Manufacturing Ltd. | Laser curing of spin-on dielectric thin films |
US6583063B1 (en) | 1998-12-03 | 2003-06-24 | Applied Materials, Inc. | Plasma etching of silicon using fluorinated gas mixtures |
US6469283B1 (en) | 1999-03-04 | 2002-10-22 | Applied Materials, Inc. | Method and apparatus for reducing thermal gradients within a substrate support |
US6290774B1 (en) * | 1999-05-07 | 2001-09-18 | Cbl Technology, Inc. | Sequential hydride vapor phase epitaxy |
US7091605B2 (en) | 2001-09-21 | 2006-08-15 | Eastman Kodak Company | Highly moisture-sensitive electronic device element and method for fabrication |
US6180490B1 (en) | 1999-05-25 | 2001-01-30 | Chartered Semiconductor Manufacturing Ltd. | Method of filling shallow trenches |
US6204201B1 (en) * | 1999-06-11 | 2001-03-20 | Electron Vision Corporation | Method of processing films prior to chemical vapor deposition using electron beam processing |
US6524931B1 (en) * | 1999-07-20 | 2003-02-25 | Motorola, Inc. | Method for forming a trench isolation structure in an integrated circuit |
US6383954B1 (en) * | 1999-07-27 | 2002-05-07 | Applied Materials, Inc. | Process gas distribution for forming stable fluorine-doped silicate glass and other films |
US6602806B1 (en) | 1999-08-17 | 2003-08-05 | Applied Materials, Inc. | Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film |
JP2001144325A (ja) * | 1999-11-12 | 2001-05-25 | Sony Corp | 窒化物系iii−v族化合物半導体の製造方法および半導体素子の製造方法 |
FI118804B (fi) * | 1999-12-03 | 2008-03-31 | Asm Int | Menetelmä oksidikalvojen kasvattamiseksi |
US6348420B1 (en) * | 1999-12-23 | 2002-02-19 | Asm America, Inc. | Situ dielectric stacks |
US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
US6440860B1 (en) | 2000-01-18 | 2002-08-27 | Micron Technology, Inc. | Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride |
US6461980B1 (en) * | 2000-01-28 | 2002-10-08 | Applied Materials, Inc. | Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber |
NL1014274C2 (nl) * | 2000-02-03 | 2001-08-16 | Tele Atlas Bv | Stelsel voor het beveiligen van op een datadrager aanwezige data. |
EP1124252A2 (en) | 2000-02-10 | 2001-08-16 | Applied Materials, Inc. | Apparatus and process for processing substrates |
EP1130633A1 (en) | 2000-02-29 | 2001-09-05 | STMicroelectronics S.r.l. | A method of depositing silicon oxynitride polimer layers |
US7419903B2 (en) * | 2000-03-07 | 2008-09-02 | Asm International N.V. | Thin films |
US6558755B2 (en) * | 2000-03-20 | 2003-05-06 | Dow Corning Corporation | Plasma curing process for porous silica thin film |
DE10196026B4 (de) | 2000-04-04 | 2011-02-10 | Asahi Kasei Kabushiki Kaisha | Überzugs-Zusammensetzung, dünner Film, zur Verwendung des dünnen Films und Verfahren zur Herstellung eines dünnen porösen Kieselsäure-Films |
US6387207B1 (en) * | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
US6630413B2 (en) | 2000-04-28 | 2003-10-07 | Asm Japan K.K. | CVD syntheses of silicon nitride materials |
US6553932B2 (en) | 2000-05-12 | 2003-04-29 | Applied Materials, Inc. | Reduction of plasma edge effect on plasma enhanced CVD processes |
US6559026B1 (en) * | 2000-05-25 | 2003-05-06 | Applied Materials, Inc | Trench fill with HDP-CVD process including coupled high power density plasma deposition |
JP4371543B2 (ja) * | 2000-06-29 | 2009-11-25 | 日本電気株式会社 | リモートプラズマcvd装置及び膜形成方法 |
US6835278B2 (en) | 2000-07-07 | 2004-12-28 | Mattson Technology Inc. | Systems and methods for remote plasma clean |
US7183177B2 (en) | 2000-08-11 | 2007-02-27 | Applied Materials, Inc. | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement |
US6614181B1 (en) * | 2000-08-23 | 2003-09-02 | Applied Materials, Inc. | UV radiation source for densification of CVD carbon-doped silicon oxide films |
US6566278B1 (en) * | 2000-08-24 | 2003-05-20 | Applied Materials Inc. | Method for densification of CVD carbon-doped silicon oxide films through UV irradiation |
JP4232330B2 (ja) * | 2000-09-22 | 2009-03-04 | 東京エレクトロン株式会社 | 励起ガス形成装置、処理装置及び処理方法 |
JP3712356B2 (ja) * | 2000-10-23 | 2005-11-02 | アプライド マテリアルズ インコーポレイテッド | 成膜方法および半導体装置の製造方法 |
US20020060322A1 (en) | 2000-11-20 | 2002-05-23 | Hiroshi Tanabe | Thin film transistor having high mobility and high on-current and method for manufacturing the same |
US6287962B1 (en) | 2000-11-30 | 2001-09-11 | Taiwan Semiconductor Manufacturing Company | Method for making a novel graded silicon nitride/silicon oxide (SNO) hard mask for improved deep sub-micrometer semiconductor processing |
US6531413B2 (en) | 2000-12-05 | 2003-03-11 | United Microelectronics Corp. | Method for depositing an undoped silicate glass layer |
US6576564B2 (en) | 2000-12-07 | 2003-06-10 | Micron Technology, Inc. | Photo-assisted remote plasma apparatus and method |
US6930041B2 (en) | 2000-12-07 | 2005-08-16 | Micron Technology, Inc. | Photo-assisted method for semiconductor fabrication |
DE10063688A1 (de) * | 2000-12-20 | 2002-07-18 | Infineon Technologies Ag | Schaltungsanordnung zur Ansteuerung einer programmierbaren Verbindung |
US6538274B2 (en) | 2000-12-20 | 2003-03-25 | Micron Technology, Inc. | Reduction of damage in semiconductor container capacitors |
US20020081817A1 (en) | 2000-12-22 | 2002-06-27 | Jayendra Bhakta | Void reduction and increased throughput in trench fill processes |
US6660662B2 (en) | 2001-01-26 | 2003-12-09 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
US6599839B1 (en) | 2001-02-02 | 2003-07-29 | Advanced Micro Devices, Inc. | Plasma etch process for nonhomogenous film |
US6589868B2 (en) | 2001-02-08 | 2003-07-08 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
EP1421607A2 (en) * | 2001-02-12 | 2004-05-26 | ASM America, Inc. | Improved process for deposition of semiconductor films |
KR100364026B1 (ko) | 2001-02-22 | 2002-12-11 | 삼성전자 주식회사 | 층간 절연막 형성방법 |
US6447651B1 (en) * | 2001-03-07 | 2002-09-10 | Applied Materials, Inc. | High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers |
JP2004526318A (ja) | 2001-03-23 | 2004-08-26 | ダウ・コーニング・コーポレイション | 水素化シリコンオキシカーバイド膜を生産するための方法 |
US6596576B2 (en) * | 2001-04-10 | 2003-07-22 | Applied Materials, Inc. | Limiting hydrogen ion diffusion using multiple layers of SiO2 and Si3N4 |
FR2824062B1 (fr) | 2001-04-27 | 2004-10-15 | Atofina | Procede de fabrication de solutions aqueuses de sels insatures d'ammonium quaternaire |
US6528332B2 (en) * | 2001-04-27 | 2003-03-04 | Advanced Micro Devices, Inc. | Method and system for reducing polymer build up during plasma etch of an intermetal dielectric |
US6780499B2 (en) | 2001-05-03 | 2004-08-24 | International Business Machines Corporation | Ordered two-phase dielectric film, and semiconductor device containing the same |
US6596653B2 (en) * | 2001-05-11 | 2003-07-22 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
US6716770B2 (en) * | 2001-05-23 | 2004-04-06 | Air Products And Chemicals, Inc. | Low dielectric constant material and method of processing by CVD |
KR100421046B1 (ko) * | 2001-07-13 | 2004-03-04 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
US6548416B2 (en) * | 2001-07-24 | 2003-04-15 | Axcelis Technolgoies, Inc. | Plasma ashing process |
US6596654B1 (en) * | 2001-08-24 | 2003-07-22 | Novellus Systems, Inc. | Gap fill for high aspect ratio structures |
US20030064154A1 (en) * | 2001-08-06 | 2003-04-03 | Laxman Ravi K. | Low-K dielectric thin films and chemical vapor deposition method of making same |
US6756085B2 (en) | 2001-09-14 | 2004-06-29 | Axcelis Technologies, Inc. | Ultraviolet curing processes for advanced low-k materials |
US6872323B1 (en) | 2001-11-01 | 2005-03-29 | Novellus Systems, Inc. | In situ plasma process to remove fluorine residues from the interior surfaces of a CVD reactor |
US6770521B2 (en) * | 2001-11-30 | 2004-08-03 | Texas Instruments Incorporated | Method of making multiple work function gates by implanting metals with metallic alloying additives |
US6794290B1 (en) | 2001-12-03 | 2004-09-21 | Novellus Systems, Inc. | Method of chemical modification of structure topography |
JP3891267B2 (ja) * | 2001-12-25 | 2007-03-14 | キヤノンアネルバ株式会社 | シリコン酸化膜作製方法 |
US20030124873A1 (en) * | 2001-12-28 | 2003-07-03 | Guangcai Xing | Method of annealing an oxide film |
AU2003238853A1 (en) * | 2002-01-25 | 2003-09-02 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6911391B2 (en) * | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
TW536775B (en) | 2002-04-18 | 2003-06-11 | Nanya Technology Corp | Manufacturing method of shallow trench isolation structure |
AU2003235305A1 (en) | 2002-04-19 | 2003-11-03 | Tokyo Electron Limited | Method of treating substrate and process for producing semiconductor device |
KR100468729B1 (ko) | 2002-04-25 | 2005-01-29 | 삼성전자주식회사 | Hcd 소스를 이용하여 실리콘 산화막을 원자층 증착하는방법 |
US6936551B2 (en) | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
US7307273B2 (en) * | 2002-06-07 | 2007-12-11 | Amberwave Systems Corporation | Control of strain in device layers by selective relaxation |
KR100623562B1 (ko) * | 2002-07-08 | 2006-09-13 | 간사이 티.엘.오 가부시키가이샤 | 실리콘 질화막의 형성 방법 및 형성 장치 |
TWI283899B (en) * | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
US6900881B2 (en) * | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US7294582B2 (en) * | 2002-07-19 | 2007-11-13 | Asm International, N.V. | Low temperature silicon compound deposition |
US6734082B2 (en) | 2002-08-06 | 2004-05-11 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a shallow trench isolation structure featuring a group of insulator liner layers located on the surfaces of a shallow trench shape |
US6825097B2 (en) | 2002-08-07 | 2004-11-30 | International Business Machines Corporation | Triple oxide fill for trench isolation |
KR100459724B1 (ko) | 2002-09-11 | 2004-12-03 | 삼성전자주식회사 | 저온 원자층증착에 의한 질화막을 식각저지층으로이용하는 반도체 소자 및 그 제조방법 |
US7456116B2 (en) | 2002-09-19 | 2008-11-25 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
US7335609B2 (en) | 2004-08-27 | 2008-02-26 | Applied Materials, Inc. | Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials |
JP4358492B2 (ja) | 2002-09-25 | 2009-11-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
US6828211B2 (en) * | 2002-10-01 | 2004-12-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control |
US6833322B2 (en) | 2002-10-17 | 2004-12-21 | Applied Materials, Inc. | Apparatuses and methods for depositing an oxide film |
US6819886B2 (en) | 2002-10-23 | 2004-11-16 | Nex Press Solutions Llc | Gloss/density measurement device with feedback to control gloss and density of images produced by an electrographic reproduction apparatus |
US7080528B2 (en) * | 2002-10-23 | 2006-07-25 | Applied Materials, Inc. | Method of forming a phosphorus doped optical core using a PECVD process |
US6900067B2 (en) * | 2002-12-11 | 2005-05-31 | Lumileds Lighting U.S., Llc | Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers |
US6923189B2 (en) | 2003-01-16 | 2005-08-02 | Applied Materials, Inc. | Cleaning of CVD chambers using remote source with cxfyoz based chemistry |
US6808748B2 (en) * | 2003-01-23 | 2004-10-26 | Applied Materials, Inc. | Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology |
US7122222B2 (en) | 2003-01-23 | 2006-10-17 | Air Products And Chemicals, Inc. | Precursors for depositing silicon containing films and processes thereof |
US7723242B2 (en) | 2004-03-15 | 2010-05-25 | Sharp Laboratories Of America, Inc. | Enhanced thin-film oxidation process |
US7205248B2 (en) * | 2003-02-04 | 2007-04-17 | Micron Technology, Inc. | Method of eliminating residual carbon from flowable oxide fill |
US6884685B2 (en) * | 2003-02-14 | 2005-04-26 | Freescale Semiconductors, Inc. | Radical oxidation and/or nitridation during metal oxide layer deposition process |
US7084076B2 (en) * | 2003-02-27 | 2006-08-01 | Samsung Electronics, Co., Ltd. | Method for forming silicon dioxide film using siloxane |
US7098149B2 (en) * | 2003-03-04 | 2006-08-29 | Air Products And Chemicals, Inc. | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
US7429540B2 (en) * | 2003-03-07 | 2008-09-30 | Applied Materials, Inc. | Silicon oxynitride gate dielectric formation using multiple annealing steps |
US6867086B1 (en) * | 2003-03-13 | 2005-03-15 | Novellus Systems, Inc. | Multi-step deposition and etch back gap fill process |
JP2004283065A (ja) | 2003-03-20 | 2004-10-14 | Ushio Inc | 化学走性機能制御膜の製造方法および人工材料並びに人工材料の製造方法 |
US7176144B1 (en) | 2003-03-31 | 2007-02-13 | Novellus Systems, Inc. | Plasma detemplating and silanol capping of porous dielectric films |
JP3976703B2 (ja) | 2003-04-30 | 2007-09-19 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
US6830624B2 (en) | 2003-05-02 | 2004-12-14 | Applied Materials, Inc. | Blocker plate by-pass for remote plasma clean |
US20040231590A1 (en) | 2003-05-19 | 2004-11-25 | Ovshinsky Stanford R. | Deposition apparatus for the formation of polycrystalline materials on mobile substrates |
US6958112B2 (en) | 2003-05-27 | 2005-10-25 | Applied Materials, Inc. | Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation |
JP2005033173A (ja) | 2003-06-16 | 2005-02-03 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
US7399388B2 (en) * | 2003-07-25 | 2008-07-15 | Applied Materials, Inc. | Sequential gas flow oxide deposition technique |
US7192891B2 (en) | 2003-08-01 | 2007-03-20 | Samsung Electronics, Co., Ltd. | Method for forming a silicon oxide layer using spin-on glass |
US6818517B1 (en) | 2003-08-29 | 2004-11-16 | Asm International N.V. | Methods of depositing two or more layers on a substrate in situ |
US7361991B2 (en) * | 2003-09-19 | 2008-04-22 | International Business Machines Corporation | Closed air gap interconnect structure |
JP4285184B2 (ja) * | 2003-10-14 | 2009-06-24 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
DE10350752A1 (de) | 2003-10-30 | 2005-06-09 | Infineon Technologies Ag | Verfahren zum Ausbilden eines Dielektrikums auf einer kupferhaltigen Metallisierung und Kondensatoranordnung |
US20050227017A1 (en) * | 2003-10-31 | 2005-10-13 | Yoshihide Senzaki | Low temperature deposition of silicon nitride |
JP2007528640A (ja) * | 2003-12-17 | 2007-10-11 | セドラエウス インコーポレーテッド | ランダムベースの意志決定プロセスを使用する方法 |
US7064004B2 (en) * | 2003-12-29 | 2006-06-20 | Intel Corporation | Induction-based heating for chip attach |
US7030468B2 (en) * | 2004-01-16 | 2006-04-18 | International Business Machines Corporation | Low k and ultra low k SiCOH dielectric films and methods to form the same |
US7488693B2 (en) | 2004-02-17 | 2009-02-10 | Toagosei Co., Ltd. | Method for producing silicon oxide film |
US7067438B2 (en) * | 2004-02-19 | 2006-06-27 | Micron Technology, Inc. | Atomic layer deposition method of forming an oxide comprising layer on a substrate |
US7524735B1 (en) * | 2004-03-25 | 2009-04-28 | Novellus Systems, Inc | Flowable film dielectric gap fill process |
US7074690B1 (en) * | 2004-03-25 | 2006-07-11 | Novellus Systems, Inc. | Selective gap-fill process |
US20050221020A1 (en) | 2004-03-30 | 2005-10-06 | Tokyo Electron Limited | Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film |
US7115508B2 (en) | 2004-04-02 | 2006-10-03 | Applied-Materials, Inc. | Oxide-like seasoning for dielectric low k films |
US7109114B2 (en) | 2004-05-07 | 2006-09-19 | Applied Materials, Inc. | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
WO2005121397A2 (en) * | 2004-06-04 | 2005-12-22 | Applied Microstructures, Inc. | Controlled vapor deposition of multilayered coatings adhered by an oxide layer |
US7297608B1 (en) | 2004-06-22 | 2007-11-20 | Novellus Systems, Inc. | Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition |
US7129187B2 (en) * | 2004-07-14 | 2006-10-31 | Tokyo Electron Limited | Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films |
US7642171B2 (en) * | 2004-08-04 | 2010-01-05 | Applied Materials, Inc. | Multi-step anneal of thin films for film densification and improved gap-fill |
US7294574B2 (en) | 2004-08-09 | 2007-11-13 | Applied Materials, Inc. | Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement |
JP4470023B2 (ja) | 2004-08-20 | 2010-06-02 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | シリコン窒化物膜の製造方法 |
US7629270B2 (en) * | 2004-08-27 | 2009-12-08 | Asm America, Inc. | Remote plasma activated nitridation |
US20060046506A1 (en) | 2004-09-01 | 2006-03-02 | Tokyo Electron Limited | Soft de-chucking sequence |
KR100550351B1 (ko) * | 2004-09-07 | 2006-02-08 | 삼성전자주식회사 | 반도체 장치의 막 형성방법 및 이를 수행하기 위한 반도체장치의 막 형성 장치 |
US7148155B1 (en) | 2004-10-26 | 2006-12-12 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
KR100782369B1 (ko) * | 2004-11-11 | 2007-12-07 | 삼성전자주식회사 | 반도체 제조장치 |
US8193096B2 (en) | 2004-12-13 | 2012-06-05 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
US20060162661A1 (en) * | 2005-01-22 | 2006-07-27 | Applied Materials, Inc. | Mixing energized and non-energized gases for silicon nitride deposition |
JP2006261434A (ja) | 2005-03-17 | 2006-09-28 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | シリコン酸化膜の形成方法 |
US20060228903A1 (en) | 2005-03-30 | 2006-10-12 | Mcswiney Michael L | Precursors for the deposition of carbon-doped silicon nitride or silicon oxynitride films |
US7972441B2 (en) * | 2005-04-05 | 2011-07-05 | Applied Materials, Inc. | Thermal oxidation of silicon using ozone |
JP4509868B2 (ja) * | 2005-06-07 | 2010-07-21 | 株式会社東芝 | 半導体装置の製造方法 |
JP5091428B2 (ja) | 2005-06-14 | 2012-12-05 | 株式会社東芝 | 半導体装置の製造方法 |
US7651955B2 (en) * | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
EP1907599A2 (en) | 2005-07-08 | 2008-04-09 | Aviza Technology, Inc. | Method for depositing silicon-containing films |
JP4860953B2 (ja) * | 2005-07-08 | 2012-01-25 | 富士通株式会社 | シリカ系被膜形成用材料、シリカ系被膜及びその製造方法、多層配線及びその製造方法、並びに、半導体装置及びその製造方法 |
US7427570B2 (en) * | 2005-09-01 | 2008-09-23 | Micron Technology, Inc. | Porous organosilicate layers, and vapor deposition systems and methods for preparing same |
US7498270B2 (en) * | 2005-09-30 | 2009-03-03 | Tokyo Electron Limited | Method of forming a silicon oxynitride film with tensile stress |
US7901743B2 (en) | 2005-09-30 | 2011-03-08 | Tokyo Electron Limited | Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system |
JP5154009B2 (ja) * | 2005-10-21 | 2013-02-27 | 株式会社ジャパンディスプレイイースト | 有機シロキサン系絶縁膜の製造方法、及び、この製造方法で製造した有機シロキサン系絶縁膜を層間絶縁として用いた液晶表示装置の製造方法 |
CN101448977B (zh) * | 2005-11-04 | 2010-12-15 | 应用材料股份有限公司 | 用于等离子体增强的原子层沉积的设备和工艺 |
US7985330B2 (en) * | 2005-12-30 | 2011-07-26 | Medtronic Minimed, Inc. | Method and system for detecting age, hydration, and functional states of sensors using electrochemical impedance spectroscopy |
US7521377B2 (en) | 2006-01-11 | 2009-04-21 | International Business Machines Corporation | SiCOH film preparation using precursors with built-in porogen functionality |
JP5070702B2 (ja) | 2006-01-19 | 2012-11-14 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び製造装置 |
US7972954B2 (en) | 2006-01-24 | 2011-07-05 | Infineon Technologies Ag | Porous silicon dielectric |
US7435661B2 (en) | 2006-01-27 | 2008-10-14 | Atmel Corporation | Polish stop and sealing layer for manufacture of semiconductor devices with deep trench isolation |
JP4984558B2 (ja) * | 2006-02-08 | 2012-07-25 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US7780865B2 (en) | 2006-03-31 | 2010-08-24 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
US7601651B2 (en) | 2006-03-31 | 2009-10-13 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
KR101304726B1 (ko) | 2006-04-03 | 2013-09-05 | 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 화학적 증착에 의한 질화규소 필름 및/또는 산화질화규소 필름의 침착 방법 |
US7524750B2 (en) | 2006-04-17 | 2009-04-28 | Applied Materials, Inc. | Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD |
US7498273B2 (en) * | 2006-05-30 | 2009-03-03 | Applied Materials, Inc. | Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes |
US7902080B2 (en) | 2006-05-30 | 2011-03-08 | Applied Materials, Inc. | Deposition-plasma cure cycle process to enhance film quality of silicon dioxide |
US7790634B2 (en) | 2006-05-30 | 2010-09-07 | Applied Materials, Inc | Method for depositing and curing low-k films for gapfill and conformal film applications |
US7825038B2 (en) | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
US20070281106A1 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US7629273B2 (en) * | 2006-09-19 | 2009-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for modulating stresses of a contact etch stop layer |
TWI462179B (zh) | 2006-09-28 | 2014-11-21 | Tokyo Electron Ltd | 用以形成氧化矽膜之成膜方法與裝置 |
US7737050B2 (en) | 2006-10-30 | 2010-06-15 | International Business Machines Corporation | Method of fabricating a nitrided silicon oxide gate dielectric layer |
US20080102223A1 (en) * | 2006-11-01 | 2008-05-01 | Sigurd Wagner | Hybrid layers for use in coatings on electronic devices or other articles |
US7749574B2 (en) | 2006-11-14 | 2010-07-06 | Applied Materials, Inc. | Low temperature ALD SiO2 |
JP5177617B2 (ja) * | 2006-12-25 | 2013-04-03 | 独立行政法人産業技術総合研究所 | 酸化シリコン薄膜形成装置 |
US7572647B2 (en) | 2007-02-02 | 2009-08-11 | Applied Materials, Inc. | Internal balanced coil for inductively coupled high density plasma processing chamber |
KR100800495B1 (ko) | 2007-02-27 | 2008-02-04 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
US7781352B2 (en) * | 2007-06-06 | 2010-08-24 | Asm Japan K.K. | Method for forming inorganic silazane-based dielectric film |
KR100866143B1 (ko) | 2007-08-03 | 2008-10-31 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 형성방법 |
US7745352B2 (en) * | 2007-08-27 | 2010-06-29 | Applied Materials, Inc. | Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process |
WO2009039251A1 (en) | 2007-09-18 | 2009-03-26 | L'air Liquide - Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming silicon-containing films |
US20090095714A1 (en) | 2007-10-12 | 2009-04-16 | Tokyo Electron Limited | Method and system for low pressure plasma processing |
US7867923B2 (en) | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
US7803722B2 (en) | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
US7943531B2 (en) | 2007-10-22 | 2011-05-17 | Applied Materials, Inc. | Methods for forming a silicon oxide layer over a substrate |
US7541297B2 (en) * | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
US8501637B2 (en) | 2007-12-21 | 2013-08-06 | Asm International N.V. | Silicon dioxide thin films by ALD |
US7737052B2 (en) | 2008-03-05 | 2010-06-15 | International Business Machines Corporation | Advanced multilayer dielectric cap with improved mechanical and electrical properties |
JP2009267366A (ja) | 2008-04-02 | 2009-11-12 | Nec Electronics Corp | 半導体記憶装置及びその製造方法 |
US8357435B2 (en) | 2008-05-09 | 2013-01-22 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US20090277587A1 (en) | 2008-05-09 | 2009-11-12 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US7622369B1 (en) | 2008-05-30 | 2009-11-24 | Asm Japan K.K. | Device isolation technology on semiconductor substrate |
US20090325391A1 (en) | 2008-06-30 | 2009-12-31 | Asm International Nv | Ozone and teos process for silicon oxide deposition |
US20100081293A1 (en) | 2008-10-01 | 2010-04-01 | Applied Materials, Inc. | Methods for forming silicon nitride based film or silicon carbon based film |
US7972980B2 (en) | 2009-01-21 | 2011-07-05 | Asm Japan K.K. | Method of forming conformal dielectric film having Si-N bonds by PECVD |
US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US7935643B2 (en) | 2009-08-06 | 2011-05-03 | Applied Materials, Inc. | Stress management for tensile films |
US7989365B2 (en) | 2009-08-18 | 2011-08-02 | Applied Materials, Inc. | Remote plasma source seasoning |
US20110136347A1 (en) | 2009-10-21 | 2011-06-09 | Applied Materials, Inc. | Point-of-use silylamine generation |
US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
US20110159213A1 (en) | 2009-12-30 | 2011-06-30 | Applied Materials, Inc. | Chemical vapor deposition improvements through radical-component modification |
CN102687252A (zh) | 2009-12-30 | 2012-09-19 | 应用材料公司 | 以可变的氮/氢比所制造的自由基来生长介电薄膜的方法 |
US8329262B2 (en) | 2010-01-05 | 2012-12-11 | Applied Materials, Inc. | Dielectric film formation using inert gas excitation |
US8647992B2 (en) | 2010-01-06 | 2014-02-11 | Applied Materials, Inc. | Flowable dielectric using oxide liner |
US8563445B2 (en) | 2010-03-05 | 2013-10-22 | Applied Materials, Inc. | Conformal layers by radical-component CVD |
US8236708B2 (en) | 2010-03-09 | 2012-08-07 | Applied Materials, Inc. | Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor |
US7994019B1 (en) | 2010-04-01 | 2011-08-09 | Applied Materials, Inc. | Silicon-ozone CVD with reduced pattern loading using incubation period deposition |
-
2007
- 2007-10-22 US US11/876,538 patent/US7867923B2/en active Active
-
2008
- 2008-10-21 SG SG200807836-2A patent/SG152183A1/en unknown
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- 2008-10-22 KR KR1020080103819A patent/KR101042788B1/ko active IP Right Grant
- 2008-10-22 CN CN2008101711607A patent/CN101418438B/zh active Active
- 2008-10-22 EP EP08167338A patent/EP2053143A3/en not_active Withdrawn
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-
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- 2010-09-27 US US12/891,426 patent/US8242031B2/en active Active
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Also Published As
Publication number | Publication date |
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US8242031B2 (en) | 2012-08-14 |
US20090104755A1 (en) | 2009-04-23 |
US20110014798A1 (en) | 2011-01-20 |
KR101042788B1 (ko) | 2011-06-20 |
EP2053143A3 (en) | 2009-09-02 |
EP2053143A2 (en) | 2009-04-29 |
CN101418438B (zh) | 2013-05-01 |
US7867923B2 (en) | 2011-01-11 |
KR20090040870A (ko) | 2009-04-27 |
SG152183A1 (en) | 2009-05-29 |
TW200927979A (en) | 2009-07-01 |
TWI506158B (zh) | 2015-11-01 |
JP2009111382A (ja) | 2009-05-21 |
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