CN100377366C - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN100377366C CN100377366C CNB2004100120067A CN200410012006A CN100377366C CN 100377366 C CN100377366 C CN 100377366C CN B2004100120067 A CNB2004100120067 A CN B2004100120067A CN 200410012006 A CN200410012006 A CN 200410012006A CN 100377366 C CN100377366 C CN 100377366C
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- Prior art keywords
- oxide film
- guard ring
- region
- heat oxide
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- IUVCFHHAEHNCFT-INIZCTEOSA-N 2-[(1s)-1-[4-amino-3-(3-fluoro-4-propan-2-yloxyphenyl)pyrazolo[3,4-d]pyrimidin-1-yl]ethyl]-6-fluoro-3-(3-fluorophenyl)chromen-4-one Chemical compound C1=C(F)C(OC(C)C)=CC=C1C(C1=C(N)N=CN=C11)=NN1[C@@H](C)C1=C(C=2C=C(F)C=CC=2)C(=O)C2=CC(F)=CC=C2O1 IUVCFHHAEHNCFT-INIZCTEOSA-N 0.000 description 2
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- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP423339/2003 | 2003-12-19 | ||
JP2003423339A JP4889072B2 (ja) | 2003-12-19 | 2003-12-19 | 半導体装置 |
JP423339/03 | 2003-12-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1630100A CN1630100A (zh) | 2005-06-22 |
CN100377366C true CN100377366C (zh) | 2008-03-26 |
Family
ID=34675356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100120067A Expired - Fee Related CN100377366C (zh) | 2003-12-19 | 2004-09-28 | 半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7399999B2 (zh) |
JP (1) | JP4889072B2 (zh) |
KR (1) | KR100573633B1 (zh) |
CN (1) | CN100377366C (zh) |
TW (1) | TWI257704B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4935192B2 (ja) * | 2006-05-31 | 2012-05-23 | 三菱電機株式会社 | 半導体装置 |
JP5159289B2 (ja) * | 2007-12-20 | 2013-03-06 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP5610930B2 (ja) | 2010-08-30 | 2014-10-22 | 三菱電機株式会社 | 半導体装置 |
CN103681816A (zh) * | 2012-09-09 | 2014-03-26 | 苏州英能电子科技有限公司 | 一种具有浮置环结构的双极型晶体管 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5510634A (en) * | 1993-01-18 | 1996-04-23 | Nippondenso Co., Ltd. | Insulated gate bipolar transistor |
JPH08306937A (ja) * | 1995-04-28 | 1996-11-22 | Fuji Electric Co Ltd | 高耐圧半導体装置 |
JPH10256542A (ja) * | 1997-03-12 | 1998-09-25 | Toshiba Corp | 半導体装置 |
JP2950025B2 (ja) * | 1992-07-02 | 1999-09-20 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
US6495866B2 (en) * | 2000-10-31 | 2002-12-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device for preventing an increased clamp voltage in an ignition circuit |
JP2003008014A (ja) * | 2000-10-31 | 2003-01-10 | Fuji Electric Co Ltd | 半導体装置 |
JP2003224282A (ja) * | 1995-03-15 | 2003-08-08 | Toshiba Corp | 高耐圧半導体素子 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4414560A (en) * | 1980-11-17 | 1983-11-08 | International Rectifier Corporation | Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region |
JPH03252167A (ja) * | 1990-02-28 | 1991-11-11 | Toyota Autom Loom Works Ltd | 高耐圧用半導体装置 |
JPH04256372A (ja) * | 1991-02-08 | 1992-09-11 | Toyota Autom Loom Works Ltd | 半導体装置及びその製造方法 |
GB2373634B (en) * | 2000-10-31 | 2004-12-08 | Fuji Electric Co Ltd | Semiconductor device |
DE10205345B9 (de) * | 2001-02-09 | 2007-12-20 | Fuji Electric Co., Ltd., Kawasaki | Halbleiterbauelement |
JP2004095659A (ja) * | 2002-08-29 | 2004-03-25 | Sanyo Electric Co Ltd | 半導体装置 |
-
2003
- 2003-12-19 JP JP2003423339A patent/JP4889072B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-22 TW TW093128674A patent/TWI257704B/zh not_active IP Right Cessation
- 2004-09-23 KR KR1020040076309A patent/KR100573633B1/ko not_active IP Right Cessation
- 2004-09-28 CN CNB2004100120067A patent/CN100377366C/zh not_active Expired - Fee Related
- 2004-10-06 US US10/958,640 patent/US7399999B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2950025B2 (ja) * | 1992-07-02 | 1999-09-20 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
US5510634A (en) * | 1993-01-18 | 1996-04-23 | Nippondenso Co., Ltd. | Insulated gate bipolar transistor |
JP2003224282A (ja) * | 1995-03-15 | 2003-08-08 | Toshiba Corp | 高耐圧半導体素子 |
JPH08306937A (ja) * | 1995-04-28 | 1996-11-22 | Fuji Electric Co Ltd | 高耐圧半導体装置 |
JPH10256542A (ja) * | 1997-03-12 | 1998-09-25 | Toshiba Corp | 半導体装置 |
US6495866B2 (en) * | 2000-10-31 | 2002-12-17 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device for preventing an increased clamp voltage in an ignition circuit |
JP2003008014A (ja) * | 2000-10-31 | 2003-01-10 | Fuji Electric Co Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US7399999B2 (en) | 2008-07-15 |
JP4889072B2 (ja) | 2012-02-29 |
US20050133814A1 (en) | 2005-06-23 |
JP2005183719A (ja) | 2005-07-07 |
TWI257704B (en) | 2006-07-01 |
KR100573633B1 (ko) | 2006-04-26 |
TW200522373A (en) | 2005-07-01 |
KR20050062357A (ko) | 2005-06-23 |
CN1630100A (zh) | 2005-06-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Osaka Japan Co-patentee after: Sanyo Semiconductor Manufacturing Co.,Ltd. Patentee after: Sanyo Electric Co.,Ltd. Address before: Osaka Japan Co-patentee before: Niigata SANYO Electric Corp. Patentee before: Sanyo Electric Co.,Ltd. Address after: Osaka Japan Co-patentee after: Niigata SANYO Electric Corp. Patentee after: Sanyo Electric Co.,Ltd. Address before: Osaka Japan Co-patentee before: Qifu Sanyang Electronics Co.,Ltd. Patentee before: Sanyo Electric Co.,Ltd. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080326 Termination date: 20120928 |