WO2012043764A1 - Composition adhésive, procédé de fabrication d'un dispositif semi-conducteur, et dispositif semi-conducteur - Google Patents

Composition adhésive, procédé de fabrication d'un dispositif semi-conducteur, et dispositif semi-conducteur Download PDF

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WO2012043764A1
WO2012043764A1 PCT/JP2011/072462 JP2011072462W WO2012043764A1 WO 2012043764 A1 WO2012043764 A1 WO 2012043764A1 JP 2011072462 W JP2011072462 W JP 2011072462W WO 2012043764 A1 WO2012043764 A1 WO 2012043764A1
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Prior art keywords
adhesive composition
semiconductor device
semiconductor
connection
bis
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PCT/JP2011/072462
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English (en)
Japanese (ja)
Inventor
一尊 本田
永井　朗
榎本　哲也
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日立化成工業株式会社
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Priority to CN201180047053.3A priority Critical patent/CN103222040B/zh
Priority to JP2012512163A priority patent/JP5373192B2/ja
Priority to KR1020137009904A priority patent/KR101455951B1/ko
Priority to KR1020137029828A priority patent/KR101728203B1/ko
Publication of WO2012043764A1 publication Critical patent/WO2012043764A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
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    • C09J7/00—Adhesives in the form of films or foils
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Definitions

  • the present invention relates to an adhesive composition, a semiconductor device manufacturing method, and a semiconductor device.
  • a COB (Chip On Board) type connection method that is widely used in BGA (Ball Grid Array), CSP (Chip Size Package), and the like also corresponds to the FC connection method.
  • the FC connection method is also widely used in a COC (Chip On Chip) type connection method in which connection parts (bumps and wirings) are formed on a semiconductor chip to connect the semiconductor chips (for example, patents). Reference 1).
  • connection methods are stacked and multi-staged, such as a chip stack package, POP (Package On Package), TSV (Through-Silicon Via), etc.
  • POP Package On Package
  • TSV Through-Silicon Via
  • Such stacking / multi-stage technology arranges semiconductor chips and the like three-dimensionally, so that the package can be made smaller than the two-dimensional arrangement technique.
  • the TSV technology is effective for improving semiconductor performance, reducing noise, reducing the mounting area, and saving power, and is attracting attention as a next-generation semiconductor wiring technology.
  • connection part solder, tin, gold, silver, copper, nickel and the like, and conductive materials including these plural types are also used.
  • the metal used in the connection part may be oxidized on the surface and an oxide film may be formed, or impurities such as oxide may adhere to the surface, which may cause impurities on the connection surface of the connection part. . If such impurities remain, there is a concern that the connectivity / insulation reliability between the semiconductor chip and the substrate or between the two semiconductor chips is lowered, and the merit of employing the above-described connection method is impaired.
  • a method for suppressing the generation of these impurities and improving the connectivity there is a method of pre-treating the surface of the substrate or the semiconductor chip before connection, such as a preflux used for OSP (Organic Solderability Preservatives) processing.
  • a preflux used for OSP Organic Solderability Preservatives
  • the method of giving a rust preventive agent is mentioned.
  • the pre-flux and the rust preventive agent may remain and deteriorate after pretreatment, which may reduce the connectivity.
  • connection part between the semiconductor chip and the substrate with a semiconductor sealing material (adhesive for semiconductor sealing)
  • the connection part is sealed simultaneously with the connection between the semiconductor chip and the substrate or the semiconductor chip. It becomes possible to do. Therefore, oxidation of the metal used for the connection part and adhesion of impurities to the connection part can be suppressed, and the connection part can be protected from the external environment. Therefore, it is possible to effectively improve connectivity / insulation reliability, workability, and productivity.
  • thermal stress derived from the difference in thermal expansion coefficient between the semiconductor chip and the substrate or between the semiconductor chips does not concentrate on the connection portion to cause connection failure. In order to do so, it is necessary to seal the gap between the semiconductor chip and the substrate with a semiconductor sealing material. In particular, components having different thermal expansion coefficients are often used between the semiconductor chip and the substrate, and it is required to improve the thermal shock resistance by sealing with a semiconductor sealing material.
  • the above-described sealing methods using a semiconductor sealing material can be broadly divided into a capillary-flow method and a pre-applied method (see, for example, Patent Documents 2 to 6).
  • the Capillary-Flow method is a method in which a liquid semiconductor sealing material is injected into the gap between the semiconductor chip and the substrate by capillary action after the semiconductor chip and the substrate are connected.
  • the pre-applied method is a method of connecting a semiconductor chip and a substrate after supplying a semiconductor sealing material in the form of a paste or film to the semiconductor chip or substrate before connecting the semiconductor chip and the substrate.
  • the gap between the semiconductor chip and the substrate is becoming narrower with the recent progress of miniaturization of semiconductor devices, and the Capillary-Flow method requires a long time for implantation and decreases productivity.
  • the pre-applied method has become the mainstream as a method for manufacturing a package capable of high functionality, high integration, and high speed.
  • the gap between the semiconductor chip and the substrate is sealed with the semiconductor sealing material at the same time as the connection by heating and pressurization, so the components contained in the semiconductor sealing material are selected in consideration of the connection conditions.
  • metal bonding is used for connection between connection portions from the viewpoint of sufficiently ensuring connectivity and insulation reliability. Since metal bonding is a connection method using a high temperature (for example, 200 ° C. or higher), it is caused by volatile components remaining in the semiconductor sealing material and newly generated volatile components by decomposition of the components contained in the semiconductor sealing material.
  • the semiconductor sealing material may foam. Thereby, bubbles called voids are generated, and the semiconductor sealing material is peeled off from the semiconductor chip and the substrate.
  • connection failure such as breakage of the connection portion due to tearing of the connection bump connecting the connection portions occurs. Due to these reasons, there is a concern that the conventional semiconductor encapsulating material may deteriorate in connectivity and insulation reliability.
  • the semiconductor sealing material does not have sufficient flux activity (removal effect of oxide film and impurities on the metal surface), the oxide film and impurities on the metal surface cannot be removed, and a good metal-metal junction is formed. In some cases, continuity cannot be ensured. Furthermore, if the insulation reliability of the semiconductor sealing material is low, it is difficult to cope with the narrow pitch of the connection portion, resulting in insulation failure. For these reasons, there is a concern that the conventional semiconductor encapsulating material may deteriorate in connectivity and insulation reliability.
  • Semiconductor devices manufactured using a semiconductor sealing material are required to achieve a sufficient level in terms of reliability, more specifically, heat resistance, moisture resistance, and reflow resistance.
  • heat resistance more specifically, heat resistance, moisture resistance, and reflow resistance.
  • reflow resistance it is required to maintain a high adhesive strength that can suppress the peeling or breaking of the die bond layer (adhesive layer) at a reflow temperature of around 260 ° C.
  • the present invention has been made in view of the above circumstances, and provides an adhesive composition capable of manufacturing a semiconductor device having excellent reflow resistance, connection reliability, and insulation reliability, and a semiconductor device using the adhesive composition
  • An object of the present invention is to provide a manufacturing method and a semiconductor device.
  • the present invention relates to a semiconductor device in which connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or a connection portion in a semiconductor device in which connection portions of a plurality of semiconductor chips are electrically connected to each other.
  • An adhesive composition containing an epoxy resin, a curing agent, and an acrylic surface-treated filler surface-treated with a compound having a group represented by the following general formula (1) A composition is provided.
  • R 1 represents a hydrogen atom or an alkyl group having 1 or 2 carbon atoms
  • R 2 represents an alkylene group having 1 to 30 carbon atoms.
  • the present invention also provides a connection in a semiconductor device in which the connection portions of the semiconductor chip and the printed circuit board are electrically connected to each other, or a semiconductor device in which the connection portions of the plurality of semiconductor chips are electrically connected to each other.
  • An adhesive composition for sealing a part which contains an epoxy resin, a curing agent, and a filler having a group represented by the following general formula (1).
  • R 1 represents a hydrogen atom or an alkyl group having 1 or 2 carbon atoms
  • R 2 represents an alkylene group having 1 to 30 carbon atoms.
  • the adhesive composition of the present invention contains an epoxy resin and a curing agent, and further contains an acrylic surface treatment filler or a filler having a group represented by the general formula (1), thereby increasing the temperature (for example, high reflow resistance, connection reliability, and insulation reliability can be realized even when applied as an adhesive for semiconductor sealing in a flip chip connection method in which metal bonding is performed at 200 ° C. or higher.
  • a silane coupling agent when included in a resin together with a filler that is not surface-treated, the filler surface is subjected to a silane coupling treatment, and fillers of various surface states are synthesized by substituents of the silane coupling agent. It is known that However, the volatility of the silane coupling agent is high, which causes voids in the manufacturing process of a semiconductor device having a process at a high temperature such as metal bonding that requires high-temperature connection. Similarly, when surface-treating a conventionally used filler, a highly volatile organic substance such as methanol may be generated, which causes a void.
  • an insulating film called a solder resist is formed on a semiconductor substrate, and the solder resist often contains an acrylic material. Therefore, the present inventors include the above-mentioned acrylic surface treatment filler or a filler having a group represented by the above general formula (1), whereby the elastic modulus at high temperature and the adhesive strength after moisture absorption of the adhesive composition. It has been found that reflow resistance can be realized.
  • the adhesive composition of the present invention the generation of a highly volatile substance is suppressed by using a surface-treated acrylic surface-treated filler or a filler having a group represented by the above general formula (1).
  • the present inventors speculate that the acrylic compound can improve the connectivity with the substrate because of its excellent adhesion to the solder resist.
  • the acrylic surface treatment filler or the filler having the group represented by the general formula (1) is difficult to lower the insulation reliability of the connection portion, and the thermal expansion coefficient and elastic modulus of the cured product of the adhesive composition are reduced.
  • the present inventors presume that the connection reliability can be improved because it is difficult to lower.
  • An acrylic surface-treated filler or a filler having a group represented by the above general formula (1) has excellent dispersibility in a resin component, and is a package (substrate-substrate) in a semiconductor device manufactured using the adhesive composition of the present invention.
  • the strength of the end portion can be improved.
  • the above-mentioned improvement in adhesive strength is not limited on the solder resist, but also appears between the semiconductor chips (SiO, SiN, etc.).
  • the compound having a group represented by the general formula (1) is preferably a compound represented by the following general formula (2).
  • R 1 represents a hydrogen atom or an alkyl group having 1 or 2 carbon atoms
  • R 2 represents an alkylene group having 1 to 30 carbon atoms
  • R 3 represents an alkyl group having 1 to 30 carbon atoms.
  • the adhesive composition of the present invention can further improve reflow resistance, connection reliability and insulation reliability by containing a filler surface-treated with the compound represented by the general formula (2). .
  • the adhesive composition of the present invention may further contain a polymer component having a weight average molecular weight of 10,000 or more from the viewpoint of improving the heat resistance and film forming property of the adhesive composition.
  • the polymer component preferably has a weight average molecular weight of 30000 or more and a glass transition temperature of 100 ° C. or less.
  • the adhesive composition of the present invention can further contain a flux activator to increase the flux activity and remove an oxide film and impurities on the metal surface of the connection portion to form a good metal-metal bond. it can.
  • the adhesive composition of the present invention has a film shape. It is preferable that
  • the present invention also provides a semiconductor device in which respective connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or a semiconductor device in which respective connection portions of a plurality of semiconductor chips are electrically connected to each other. It is a method, Comprising: The manufacturing method of a semiconductor device provided with the process of sealing a connection part using said adhesive composition is provided.
  • the method for manufacturing a semiconductor device of the present invention by using the adhesive composition, the reflow resistance, the connection reliability, and the insulation reliability of the semiconductor device can be improved.
  • connection part contains at least one metal selected from the group consisting of gold, silver, copper, nickel, tin and lead as a main component, the electrical conductivity, thermal conductivity and connection reliability of the connection part are further improved. can do.
  • the present invention also provides a semiconductor device obtained by the method for manufacturing a semiconductor device.
  • the semiconductor device of the present invention is manufactured using the method for manufacturing a semiconductor device described above, the reflow resistance, connection reliability, and insulation reliability are sufficiently excellent.
  • an adhesive composition excellent in reflow resistance, connection reliability, and insulation reliability a method for manufacturing a semiconductor device using the adhesive composition, and a semiconductor device.
  • the adhesive composition (adhesive for semiconductor encapsulation) of the present embodiment is a semiconductor in which respective connection portions of a semiconductor chip and a printed circuit board (hereinafter simply referred to as “substrate” in some cases) are electrically connected to each other.
  • the adhesive composition is optionally composed of a polymer component having a weight average molecular weight of 10,000 or more (hereinafter referred to as “(d) component”) or a flux activator (hereinafter referred to as “(e) component”. ").
  • a polymer component having a weight average molecular weight of 10,000 or more hereinafter referred to as “(d) component”
  • a flux activator hereinafter referred to as “(e) component”.
  • Epoxy Resin Any epoxy resin can be used without particular limitation as long as it has two or more epoxy groups in the molecule.
  • Specific examples of the component (a) include bisphenol A type, bisphenol F type, naphthalene type, phenol novolak type, cresol novolak type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type and various polyfunctionalities.
  • Epoxy resins can be used. These can be used alone or as a mixture of two or more.
  • the thermal weight loss rate at 250 ° C. is 5% or less. It is preferable to use an epoxy resin. In the case of 300 ° C., it is preferable to use an epoxy resin having a thermal weight loss rate at 300 ° C. of 5% or less.
  • (B) Component Curing Agent
  • the (b) component include a phenol resin curing agent, an acid anhydride curing agent, an amine curing agent, an imidazole curing agent, and a phosphine curing agent.
  • the component contains a phenolic hydroxyl group, an acid anhydride, an amine or an imidazole, it exhibits a flux activity that suppresses the formation of an oxide film at the connection part, and improves connection reliability and insulation reliability. it can.
  • each curing agent will be described.
  • Phenolic resin-based curing agent The phenolic resin-based curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule.
  • phenol novolak, cresol novolak, phenol aralkyl resin, cresol A naphthol formaldehyde polycondensate, a triphenylmethane type polyfunctional phenol, and various polyfunctional phenol resins can be used. These can be used alone or as a mixture of two or more.
  • the equivalent ratio of the phenol resin curing agent to the component (a) is 0.3 to 1.5 from the viewpoint of good curability, adhesiveness and storage stability. It is preferably 0.4 to 1.0, more preferably 0.5 to 1.0.
  • the equivalent ratio is 1.5 or less, the unreacted phenolic hydroxyl group does not remain excessively, and the water absorption is increased. It tends to be kept low and the insulation reliability improves.
  • Acid anhydride curing agent examples include methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, and ethylene glycol bis.
  • Anhydro trimellitate can be used. These can be used alone or as a mixture of two or more.
  • the equivalent ratio of the acid anhydride-based curing agent to the component (a) is 0.3 to 1. from the viewpoint of good curability, adhesiveness, and storage stability. 5 is preferable, 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable.
  • the equivalence ratio is 0.3 or more, the curability is improved and the adhesive force tends to be improved.
  • the equivalent ratio is 1.5 or less, the unreacted acid anhydride does not remain excessively, and the water absorption rate is increased. It tends to be kept low and the insulation reliability improves.
  • Amine-based curing agent for example, dicyandiamide can be used.
  • the equivalent ratio of the amine curing agent to the component (a) is preferably 0.3 to 1.5 from the viewpoint of good curability, adhesion and storage stability. 4-1.0 is more preferable, and 0.5-1.0 is still more preferable. If the equivalence ratio is 0.3 or more, the curability tends to be improved and the adhesive strength tends to be improved. If the equivalent ratio is 1.5 or less, excessive unreacted amine does not remain and the insulation reliability is improved. Tend to.
  • Imidazole-based curing agent examples include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1- Cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6 -[2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1')]-ethyl-s-triazine, 2, 4-Diamino-6- [2′-ethyl-4′-methylimidazolyl
  • the content of the imidazole curing agent is preferably 0.1 to 20 parts by mass, more preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of component (a). If the content of the imidazole-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and if it is 20 parts by mass or less, the adhesive composition may be cured before the metal bond is formed. There is a tendency that poor connection is less likely to occur.
  • (V) Phosphine curing agent examples include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra (4-methylphenyl) borate and tetraphenylphosphonium (4-fluorophenyl) borate. Can be mentioned.
  • the content of the phosphine-based curing agent is preferably 0.1 to 10 parts by mass and more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the component (a). If the content of the phosphine-based curing agent is 0.1 parts by mass or more, curability tends to be improved, and if it is 10 parts by mass or less, the adhesive composition may be cured before a metal bond is formed. There is a tendency that poor connection is less likely to occur.
  • a phenol resin curing agent, an acid anhydride curing agent, and an amine curing agent can be used singly or as a mixture of two or more.
  • the imidazole-based curing agent and the phosphine-based curing agent may each be used alone, but may be used together with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.
  • the adhesive composition contains a phenol resin curing agent, an acid anhydride curing agent or an amine curing agent as the component (b), it exhibits a flux activity for removing an oxide film and further improves connection reliability. Can do.
  • a surface treatment is performed with a compound having a group represented by the above general formula (1). If it is a filler, there is no restriction
  • R 1 represents a hydrogen atom or an alkyl group having 1 or 2 carbon atoms, and is preferably a hydrogen atom, a methyl group, or an ethyl group.
  • R 2 represents an alkylene group having 1 to 30 carbon atoms, preferably an alkylene group having 1 to 15 carbon atoms. When the number of carbon atoms of R 2 exceeds 30, it tends to prevent the surface treatment of the filler.
  • Whether the component (c) has a group represented by the general formula (1) on the filler surface can be confirmed, for example, by the following method.
  • the adhesive composition of the present embodiment is heated, and the generated methanol is measured using gas chromatography (for example, product name “GC-17A” manufactured by SHIMADZU). From the amount of the methanol, it can be confirmed that it has a group represented by the general formula (1) present on the filler surface. In this case, the methanol amount of the adhesive composition not containing the component (C) is measured in the same manner as a reference.
  • gas chromatography for example, product name “GC-17A” manufactured by SHIMADZU.
  • Examples of the insulating inorganic filler include glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. Silica, alumina, titanium oxide, and boron nitride are preferable, and silica, alumina, and boron nitride are more preferable. preferable.
  • Examples of whiskers include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride.
  • Examples of the resin filler include polyurethane and polyimide. These fillers and whiskers can be used alone or as a mixture of two or more. The shape, particle size and blending amount of the filler are not particularly limited. Fine nanosilica may be used. Among these fillers, silica filler is preferable because of easy surface treatment and relatively good compatibility with the resin component.
  • a filler surface-treated with the compound represented by the general formula (2) can be used as the component (c).
  • silica filler surface-treated with an acrylic compound in which R 1 is a hydrogen atom silica filler surface-treated with a methacrylic compound in which R 1 is a methyl group, and R A silica filler surface-treated with an ethacryl compound in which 1 is an ethyl group can be used.
  • R 1 is preferably a non-bulky group, and R 1 is a hydrogen atom or carbon.
  • R 1 As the number of carbons in R 1 increases, the bulk increases. When the number of carbons exceeds 2, the reactivity tends to decrease. That is, as the component (c), a silica filler surface-treated with an acrylic compound, a methacrylic compound, or an ethacrylic compound can be used.
  • R 2 represents an alkylene group having 1 to 30 carbon atoms, and is preferably an alkylene group having 1 to 15 carbon atoms because it has a small amount of volatile components.
  • R 3 represents an alkyl group having 1 to 30 carbon atoms and can be appropriately selected depending on the ease of surface treatment. When the carbon number of R 3 is 30 or less, the filler tends to be surface treated.
  • the shape and particle size of the component may be appropriately set according to the use of the adhesive composition, and are not particularly limited.
  • the average particle diameter of component (C) is preferably 2 ⁇ m or less, and in packages where narrow pitch and narrow gap are advanced, avoiding a decrease in reliability due to trapping. Therefore, it is more preferably 1.5 ⁇ m or less, and particularly preferably 1.0 ⁇ m or less. Further, the lower limit is more preferably 0.005 ⁇ m or more, and particularly preferably 0.01 ⁇ m or less, from the viewpoint of handleability.
  • the blending amount of component (c) is preferably 5 to 80% by mass, more preferably 10 to 70% by mass, based on the total solid content of the adhesive composition. If it is 5% by mass or more, the adhesive force tends to be strongly improved, and if it is 80% by mass or less, the viscosity is easily adjusted, the fluidity of the adhesive composition is lowered, and the filler bites into the connection part. It is difficult for trapping (trapping) to occur, and connection reliability tends to be improved.
  • silane coupling agent is not surface-treated with the filler in advance and is added as a constituent component of the adhesive composition and the surface treatment is performed in the system, methanol or the like is generated, which causes foaming during a high-temperature process.
  • Component (d) Polymer component having a weight average molecular weight of 10,000 or more
  • component (d) include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, poly Examples include ether sulfone resin, polyetherimide resin, polyvinyl acetal resin, urethane resin, and acrylic rubber.
  • phenoxy resin, polyimide resin, acrylic rubber, cyanate ester resin, and polycarbodiimide resin are preferable, and phenoxy resin, polyimide resin, and acrylic rubber are more preferable.
  • These components (d) can be used alone or as a mixture or copolymer of two or more. However, the (d) component does not include the epoxy resin as the (a) component.
  • polymer components such as the phenoxy resin and polyimide resin described above, or synthesized components may be used.
  • the polyimide resin can be obtained, for example, by subjecting tetracarboxylic dianhydride and diamine to a condensation reaction by a known method. More specifically, tetracarboxylic dianhydride and diamine are mixed in equimolar or nearly equimolar amounts in an organic solvent (the order of addition of each component is arbitrary), and the reaction temperature is 80 ° C. or lower, preferably 0 to The addition reaction may be set at 60 ° C.
  • the tetracarboxylic dianhydride is preferably recrystallized and purified with acetic anhydride in order to suppress deterioration of various properties of the adhesive composition.
  • polyamic acid which is a polyimide precursor
  • the polyimide resin can be obtained by dehydrating and ring-closing the polyamic acid.
  • the dehydration ring closure can be performed by a thermal ring closure method in which heat treatment is performed or a chemical ring closure method using a dehydrating agent.
  • the molecular weight of the polyamic acid can be adjusted by heating at 50 to 80 ° C. for depolymerization.
  • the tetracarboxylic dianhydride used as a raw material for the polyimide resin is not particularly limited.
  • a represents an integer of 2 to 20.
  • the tetracarboxylic dianhydride represented by the above general formula (I) can be synthesized from trimellitic anhydride monochloride and the corresponding diol, specifically, 1,2- (ethylene) bis (trimellitate).
  • Anhydride 1,3- (trimethylene) bis (trimellitic anhydride), 1,4- (tetramethylene) bis (trimellitic anhydride), 1,5- (pentamethylene) bis (trimellitic anhydride), 1, 6- (Hexamethylene) bis (trimellitic anhydride), 1,7- (heptamethylene) bis (trimellitic anhydride), 1,8- (octamethylene) bis (trimellitic anhydride), 1,9- (nonamethylene) Bis (trimellitic anhydride), 1,10- (decamethylene) bis (trimellitic anhydride), 1,12- (dodecamethylene) Scan (trimellitate anhydride), 1,16 (hexamethylene decamethylene) bis (trimellitate an
  • tetracarboxylic dianhydride a tetracarboxylic dianhydride represented by the above formula (II) is preferable in that it can provide excellent moisture resistance reliability.
  • the said tetracarboxylic dianhydride can be used individually or in combination of 2 or more types.
  • the content of the tetracarboxylic dianhydride represented by the above formula (II) is preferably 40 mol% or more, more preferably 50 mol% or more, and more preferably 70 mol% or more based on the total tetracarboxylic dianhydride. Further preferred. When the content is 40 mol% or more, there is a tendency to sufficiently ensure the effect of moisture resistance reliability due to the use of the tetracarboxylic dianhydride represented by the above formula (II).
  • the diamine used as a raw material for the polyimide resin is not particularly limited, and examples thereof include o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 4,4′-diaminodiphenyl ether, 3,3′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylethermethane, bis (4-amino-3,5-dimethylphenyl) methane, bis ( 4-amino-3,5-diisopropylphenyl) methane, 3,3′-diaminodiphenyldifluoromethane, 3,4′-diaminodiphenyldifluoromethane, 4,4′-diaminodipheny
  • Q 1 , Q 2 and Q 3 each independently represents an alkylene group having 1 to 10 carbon atoms, and b represents an integer of 1 to 80.
  • Q 4 , Q 5 , Q 6 and Q 7 each independently represent an alkylene group having 1 to 10 carbon atoms, and c, d and e each independently represents an integer of 1 to 50.
  • f represents an integer of 5 to 20.
  • Q 8 and Q 13 each independently represent an alkylene group having 1 to 5 carbon atoms or a phenylene group which may have a substituent
  • Q 9 , Q 10 , Q 11 and Q 12 are each Independently, it represents an alkyl group having 1 to 5 carbon atoms, a phenyl group or a phenoxy group
  • g represents an integer of 1 to 5.
  • the diamine represented by the above general formula (III), (IV) or (V) is preferable in that low stress property, low temperature laminating property and low temperature adhesiveness can be imparted, and has low water absorption and low water absorption.
  • the diamine represented by the said general formula (VI) is preferable at the point which can provide.
  • the content of the aliphatic ether diamine represented by the general formula (III) or (IV) is preferably 1 to 50 mol% of the total diamine, and the aliphatic diamine represented by the general formula (V)
  • the content of is preferably 20 to 80 mol% of the total diamine, and the content of the siloxane diamine represented by the general formula (VI) is preferably 20 to 80 mol% of the total diamine.
  • the content is within the above range, the effect of imparting low temperature laminating properties and low water absorption tends to increase.
  • aliphatic ether diamine represented by the general formula (III) include aliphatic ether diamines represented by the following formulas (III-1) to (III-5).
  • n represents an integer of 1 or more.
  • the weight average molecular weight of the aliphatic ether diamine represented by the general formula (III-4) is preferably 350, 750, 1100 or 2100, for example.
  • the weight average molecular weight of the aliphatic ether diamine represented by the general formula (III-5) is preferably 230, 400, or 2000, for example.
  • the above general formula (IV), the following general formula (VII), (VIII) or (IX) is used in that low-temperature laminating properties and good adhesion to a substrate with an organic resist can be secured.
  • the aliphatic ether diamine represented respectively is more preferable.
  • h represents an integer of 2 to 80, more preferably 2 to 70.
  • c, d and e represent an integer of 1 to 50, more preferably 2 to 40.
  • j and k each independently represent an integer of 1 to 70.
  • aliphatic ether diamine represented by the above general formula (VII) examples include Jeffamine D-230, D-400, D-2000, D-4000, and BASF manufactured by Sun Techno Chemical Co., Ltd. Polyether amines D-230, D-400 and D-2000 can be mentioned.
  • Specific examples of the aliphatic ether diamine represented by the general formula (VIII) include Jeffamine ED manufactured by Sun Techno Chemical Co., Ltd. -600, ED-900, and ED-2001.
  • Examples of the aliphatic ether diamine represented by the above formula (IX) examples include Jeffamine EDR-148 manufactured by Sun Techno Chemical Co., Ltd.
  • Examples of the aliphatic diamine represented by the general formula (V) include 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6- Diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane and 1,2-diaminocyclohexane Is mentioned. Among these, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane and 1,12-diaminododecane are preferable.
  • siloxane diamine represented by the general formula (VI) when g in the general formula (VI) is 1, 1,1,3,3-tetramethyl-1,3-bis (4-amino) Phenyl) disiloxane, 1,1,3,3-tetraphenoxy-1,3-bis (4-aminoethyl) disiloxane, 1,1,3,3-tetraphenyl-1,3-bis (2-amino) Ethyl) disiloxane, 1,1,3,3-tetraphenyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (2-amino) Ethyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-bis (3-aminopropyl) disiloxane, 1,1,3,3-tetramethyl-1,3-
  • the above polyimide resins can be used alone or as a mixture of two or more.
  • the glass transition temperature (Tg) of the component (d) is preferably 100 ° C. or less, more preferably 85 ° C. or less, from the viewpoint of excellent adhesiveness of the adhesive composition to the substrate or chip.
  • Tg is 100 ° C. or less, bumps formed on the semiconductor chip, and unevenness such as electrodes and wiring patterns formed on the substrate can be easily embedded with the adhesive composition, and no voids remain without voids. Tends to be less likely to occur.
  • the Tg is a Tg measured using a DSC (DSC-7 model manufactured by Perkin Elmer) under the conditions of a sample amount of 10 mg, a heating rate of 10 ° C./min, and a measurement atmosphere: air.
  • the weight average molecular weight of the component (d) is 10000 or more in terms of polystyrene, but preferably 30000 or more, more preferably 40000 or more, and even more preferably 50000 or more in order to exhibit good film formability alone.
  • the weight average molecular weight is 10,000 or more, film formability and heat resistance tend to be improved.
  • the weight average molecular weight means a weight average molecular weight when measured in terms of polystyrene using high performance liquid chromatography (for example, product name “C-R4A” manufactured by Shimadzu Corporation).
  • the content of the component (d) is not particularly limited, but is preferably 1 to 500 parts by mass with respect to 100 parts by mass of the component (a), in order to maintain a good film shape, and 5 to 300 parts by mass. More preferred is 10 to 200 parts by mass.
  • the content of the component (d) is 1 part by mass or more, there is a tendency that an effect of improving the film formability is easily obtained, and when it is 500 parts by mass or less, the curability of the adhesive composition is improved and the adhesive strength is increased. There is a tendency to improve.
  • the adhesive composition of the present invention can contain a component (e), that is, a flux activator that is a compound exhibiting flux activity (activity for removing oxides and impurities).
  • a flux activator that is a compound exhibiting flux activity (activity for removing oxides and impurities).
  • the flux activator include nitrogen-containing compounds having lone pairs such as imidazoles and amines, carboxylic acids, phenols, and alcohols.
  • carboxylic acids have a strong flux activity and react with the epoxy resin as the component (a) and are not present in a free state in the cured product of the adhesive composition, thereby preventing a decrease in insulation reliability. it can.
  • carboxylic acids examples include ethanoic acid, propanoic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, heptadecanoic acid, octadecanoic acid and the like.
  • Fatty saturated carboxylic acids Fatty saturated carboxylic acids; oleic acid, linoleic acid, linolenic acid, arachidonic acid, docosahesaenoic acid, eicosapentaenoic acid, etc .; aliphatic unsaturated carboxylic acids; maleic acid, fumaric acid, oxalic acid, malonic acid, succinic acid, glutaric acid Aliphatic dicarboxylic acids such as adipic acid; fragrances such as benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, trimellitic acid, trimesic acid, hemimellitic acid, pyromellitic acid, pentanecarboxylic acid, melittic acid Group carboxylic acids.
  • Examples of the carboxylic acid having a hydroxyl group include lactic acid, malic acid, citric acid, and salicylic acid.
  • the aromatic carboxylic acid has an electron-withdrawing or electron-donating substituent
  • an aromatic carboxylic acid in which the acidity of the carboxylic acid on the aromatic is changed by the substituent can also be used.
  • the flux activity tends to improve as the acidity of the carboxylic acid increases, the insulation reliability may decrease if the acidity is too high.
  • the electron-withdrawing substituent that increases the acidity of the carboxylic acid include a nitro group, a cyano group, a trifluoromethyl group, a halogen group, and a phenyl group.
  • Examples of the electron-donating substituent that weakens the acidity of the carboxylic acid include a methyl group, an ethyl group, an isopropyl group, a tertiary butyl group, a dimethylamino group, and a trimethylamino group.
  • the number and position of the substituents are not particularly limited as long as the flux activity and the insulation reliability are not lowered.
  • a filler may be further blended.
  • an insulating inorganic filler, whisker or resin filler can be used as the filler.
  • the insulating inorganic filler, whisker, or resin filler the same material as the component (c) can be used.
  • These fillers, whiskers, and resin fillers can be used alone or as a mixture of two or more.
  • the shape, average particle diameter and content of the filler are not particularly limited.
  • additives such as an antioxidant, a silane coupling agent, a titanium coupling agent, a leveling agent, and an ion trap agent may be blended in the adhesive composition of the present embodiment. You may use these individually by 1 type or in combination of 2 or more types. About these compounding quantities, what is necessary is just to adjust suitably so that the effect of each additive may express.
  • the adhesive composition of this embodiment can be formed into a film.
  • a method for producing a film adhesive using the adhesive composition of the present embodiment is shown below. First, the component (a), the component (b) and the component (c), and the component (d) or the component (e) added as necessary are added to an organic solvent, and mixed by stirring, kneading, etc. A resin varnish is prepared by dissolving or dispersing. Then, after applying the resin varnish on the base film subjected to the release treatment using a knife coater, roll coater or applicator, the organic solvent is removed by heating, whereby a film adhesive is applied on the base film. Is obtained.
  • organic solvent used for preparing the resin varnish those having characteristics capable of uniformly dissolving or dispersing each component are preferable.
  • dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether examples include toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate.
  • These organic solvents can be used alone or in combination of two or more.
  • Stir mixing and kneading at the time of preparing the resin varnish can be performed using, for example, a stirrer, a raking machine, a three roll, a ball mill, a bead mill, and a homodisper.
  • the substrate film is not particularly limited as long as it has heat resistance that can withstand the heating conditions when the organic solvent is volatilized.
  • Polyolefin films such as polypropylene film and polymethylpentene film, polyethylene terephthalate film, polyethylene naphthalate Examples thereof include polyester films such as phthalate films, polyimide films, and polyetherimide films.
  • the base film is not limited to a single layer made of these films, and may be a multilayer film made of two or more materials.
  • the drying conditions when the organic solvent is volatilized from the resin varnish applied to the base film is preferably set so that the organic solvent is sufficiently volatilized, specifically, 50 to 200 ° C. for 0.1 to 90 minutes. It is preferable to perform heating.
  • the adhesive composition of the present embodiment can also be used by spin-coating directly on a wafer and drying it if necessary after separating the wafer from the viewpoint of improving workability.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device of the present invention.
  • a semiconductor device 100 includes a semiconductor chip 10 and a substrate (circuit wiring board) 20 that face each other, and wirings 15 that are respectively disposed on mutually facing surfaces of the semiconductor chip 10 and the substrate 20.
  • the connection bump 30 connects the semiconductor chip 10 and the wiring 15 of the substrate 20 to each other, and the adhesive composition 40 is filled in the gap between the semiconductor chip 10 and the substrate 20 without a gap.
  • the semiconductor chip 10 and the substrate 20 are flip-chip connected by wiring 15 and connection bumps 30.
  • the wiring 15 and the connection bump 30 are sealed with an adhesive composition 40 and are shielded from the external environment.
  • the semiconductor device 200 includes a semiconductor chip 10 and a substrate 20 that face each other, a bump 32 that is disposed on a surface that faces the semiconductor chip 10 and the substrate 20, respectively, And an adhesive composition 40 filled in the gaps between the substrates 20 without any gaps.
  • the semiconductor chip 10 and the substrate 20 are flip-chip connected by connecting opposing bumps 32 to each other.
  • the bumps 32 are sealed with the adhesive composition 40 and are blocked from the external environment.
  • FIG. 2 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention.
  • the semiconductor device 300 is the same as the semiconductor device 100 except that two semiconductor chips 10 are flip-chip connected by wirings 15 and connection bumps 30.
  • the semiconductor device 400 is the same as the semiconductor device 200 except that the two semiconductor chips 10 are flip-chip connected by the bumps 32.
  • the semiconductor chip 10 is not particularly limited, and an elemental semiconductor composed of the same kind of element such as silicon or germanium, or a compound semiconductor such as gallium arsenide or indium phosphide can be used.
  • the substrate 20 is not particularly limited as long as it is a circuit board, and an unnecessary portion of a metal film is etched on the surface of an insulating substrate mainly composed of glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimide triazine, or the like.
  • Connections such as wiring 15 and bumps 32 are mainly composed of gold, silver, copper, and solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper). Nickel, tin, lead, etc., and may contain a plurality of metals.
  • gold, silver, and copper are preferable, and silver and copper are more preferable from the viewpoint of providing a package with excellent electrical and thermal conductivity of the connection portion.
  • silver, copper, and solder are preferable, copper and solder are more preferable, and solder is more preferable, based on being inexpensive. If an oxide film is formed on the surface of a metal at room temperature, the productivity may decrease or the cost may increase. From the viewpoint of suppressing the formation of the oxide film, gold, silver, copper and solder are preferable, and gold, silver Solder is more preferable, and gold and silver are more preferable.
  • the surface of the wiring 15 and the bump 32 is mainly composed of gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, etc.
  • the metal layer may be formed by plating, for example. This metal layer may be composed of only a single component or may be composed of a plurality of components.
  • the metal layer may have a structure in which a single layer or a plurality of metal layers are stacked.
  • the semiconductor device of this embodiment may be formed by stacking a plurality of structures (packages) as shown in the semiconductor devices 100 to 400.
  • the semiconductor devices 100 to 400 include gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper), tin, nickel, etc. May be electrically connected to each other by a bump or wiring including
  • FIG. 3 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention, which is a semiconductor device using the TSV technology.
  • the wiring 15 formed on the interposer 50 is connected to the wiring 15 of the semiconductor chip 10 via the connection bumps 30, so that the semiconductor chip 10 and the interposer 50 are flip-chip connected. ing.
  • the gap between the semiconductor chip 10 and the interposer 50 is filled with the adhesive composition 40 without a gap.
  • the semiconductor chip 10 On the surface of the semiconductor chip 10 opposite to the interposer 50, the semiconductor chip 10 is repeatedly stacked via the wiring 15, the connection bumps 30, and the adhesive composition 40.
  • the wirings 15 on the pattern surface on the front and back sides of the semiconductor chip 10 are connected to each other by through electrodes 34 filled in holes that penetrate the inside of the semiconductor chip 10.
  • the penetration electrode 34 copper, aluminum, etc. can be used as a material of the penetration electrode 34.
  • Such a TSV technology makes it possible to acquire a signal from the back surface of a semiconductor chip that is not normally used. Furthermore, since the through electrode 34 passes vertically through the semiconductor chip 10, the distance between the semiconductor chips 10 facing each other and between the semiconductor chip 10 and the interposer 50 can be shortened and flexible connection is possible.
  • the adhesive composition of the present embodiment can be applied as an adhesive for semiconductor sealing between the semiconductor chips 10 facing each other or between the semiconductor chip 10 and the interposer 50 in such TSV technology.
  • a semiconductor chip can be directly mounted on a motherboard without using an interposer.
  • the adhesive composition of this embodiment can also be applied when such a semiconductor chip is directly mounted on a mother board.
  • the adhesive composition of this embodiment can be applied also when sealing the space
  • FIG. 4 is a process cross-sectional view schematically showing one embodiment of a method for manufacturing a semiconductor device of the present invention.
  • solder resist 60 having openings at positions where connection bumps 30 are formed is formed on a substrate 20 having wirings 15.
  • the solder resist 60 is not necessarily provided. However, by providing a solder resist on the substrate 20, it is possible to suppress the occurrence of a bridge between the wirings 15 and improve the connection reliability and insulation reliability.
  • the solder resist 60 can be formed using, for example, commercially available solder resist ink for packages. Specific examples of commercially available solder resist ink for packaging include SR series (trade name, manufactured by Hitachi Chemical Co., Ltd.) and PSR4000-AUS series (trade name, manufactured by Taiyo Ink Manufacturing Co., Ltd.).
  • connection bumps 30 are formed in the openings of the solder resist 60.
  • a film-like adhesive composition hereinafter sometimes referred to as “film-like adhesive” 40 is formed on the substrate 20 on which the connection bumps 30 and the solder resist 60 are formed.
  • the film adhesive 40 can be attached by a hot press, roll lamination, vacuum lamination, or the like. The supply area and thickness of the film adhesive 40 are appropriately set according to the size of the semiconductor chip 10 and the substrate 20 and the height of the connection bump 30.
  • the wiring 15 and the connection bumps 30 of the semiconductor chip 10 are aligned using a connection device such as a flip chip bonder. Subsequently, the semiconductor chip 10 and the substrate 20 are pressure-bonded while being heated at a temperature equal to or higher than the melting point of the connection bump 30 to connect the semiconductor chip 10 and the substrate 20 as shown in FIG. The gap between the semiconductor chip 10 and the substrate 20 is sealed and filled with the adhesive 40. Thus, the semiconductor device 600 is obtained.
  • the semiconductor device is temporarily fixed (in a state where the semiconductor adhesive is interposed), and heat-treated in a reflow furnace, thereby melting the connection bumps 30 and the semiconductor chip 10.
  • the substrate 20 may be connected. Since it is not always necessary to form a metal joint at the temporary fixing stage, it can be crimped with a low load, in a short time, and at a low temperature as compared with the above-mentioned method of crimping while heating. Deterioration of the part can be suppressed.
  • the heating temperature is preferably a temperature at which curing of the film adhesive proceeds, and more preferably a temperature at which the film adhesive is completely cured.
  • the heating temperature and the heating time are appropriately set.
  • the substrate 20 may be connected after the film adhesive 40 is attached to the semiconductor chip 10. Further, after the semiconductor chip 10 and the substrate 20 are connected by the wiring 15 and the connection bumps 30, the gap between the semiconductor chip 10 and the substrate 20 may be filled with a paste-like adhesive composition.
  • the adhesive composition is supplied onto the semiconductor chip 10 by supplying the adhesive composition to a semiconductor wafer connected with a plurality of semiconductor chips 10 and then dicing into individual pieces.
  • the obtained structure may be obtained.
  • the adhesive composition is in a paste form, it is not particularly limited, but it is sufficient to embed wirings and bumps on the semiconductor chip 10 and make the thickness uniform by a coating method such as spin coating. In this case, since the supply amount of the resin becomes constant, productivity is improved and generation of voids due to insufficient embedding and a decrease in dicing property can be suppressed.
  • the adhesive composition is in the form of a film, it is not particularly limited.
  • the adhesive composition is in a film form so as to embed wirings and bumps on the semiconductor chip 10 by a sticking method such as heating press, roll lamination, and vacuum lamination. What is necessary is just to supply a resin composition. In this case, since the supply amount of the resin is constant, productivity is improved, and generation of voids due to insufficient embedding and a decrease in dicing property can be suppressed.
  • connection load is set in consideration of variations in the number and height of the connection bumps 30, the amount of deformation of the wiring that receives the connection bumps 30 due to pressurization, or the bumps of the connection portions.
  • the connection temperature is preferably such that the temperature of the connection portion is equal to or higher than the melting point of the connection bump 30, but may be any temperature at which metal connection of each connection portion (bump or wiring) is formed.
  • the connection bump 30 is a solder bump, about 240 ° C. or higher is preferable.
  • connection time at the time of connection varies depending on the constituent metal of the connection part, but a shorter time is preferable from the viewpoint of improving productivity.
  • connection time is preferably 20 seconds or less, more preferably 10 seconds or less, and even more preferably 5 seconds or less.
  • connection time is preferably 60 seconds or less.
  • the adhesive composition of the present invention exhibits excellent reflow resistance, connection reliability, and insulation reliability even in flip chip connection portions having various package structures described above.
  • Polyimide A A solvent (NMP) was removed from the obtained polyimide resin, and a solution obtained by dissolving in methyl ethyl ketone (MEK) so as to have a solid content of 50% by mass was designated as “polyimide A”.
  • Polyimide A had a Tg of 30 ° C., a weight average molecular weight of 50,000, and an SP value (solubility parameter) of 10.2.
  • Example 1 100 parts by weight of epoxy resin (EP1032), 7.5 parts by weight of curing agent (2PHZ), 175 parts by weight of filler (SM silica), 25 parts by weight of flux activator (diphenolic acid), and MEK solvent with a solid content of 60% by weight Add the same amount of beads with a diameter of 0.8 mm and beads with a diameter of 2.0 mm as the solid content, and stir for 30 minutes in a bead mill (Fritch Japan Co., Ltd., planetary pulverizer “P-7”). did. Next, 100 parts by mass (in terms of solid content) of polyimide A was added, and the mixture was again stirred for 30 minutes with a bead mill. Then, the beads used for stirring were removed by filtration to obtain a resin varnish.
  • the resulting resin varnish was applied to a base film (trade name “Purex A53” manufactured by Teijin DuPont Films Ltd.) with a small precision coating device (manufactured by Yanai Seiki Co., Ltd.) Manufactured) and dried at 70 ° C. for 10 minutes to produce a film adhesive.
  • a base film trade name “Purex A53” manufactured by Teijin DuPont Films Ltd.
  • a small precision coating device manufactured by Yanai Seiki Co., Ltd.
  • Example 2 to 3 and Comparative Examples 1 to 6 Except that the composition of the raw materials used was changed as shown in Table 1 below, film-like adhesives of Examples 2 to 3 and Comparative Examples 1 to 6 were produced in the same manner as Example 1.
  • the film adhesive was cut into a predetermined size (length 37 mm ⁇ width 4 mm ⁇ thickness 0.13 mm), and cured in a clean oven (manufactured by ESPEC Corporation) at 180 ° C. for 3 hours.
  • the elastic modulus at 260 ° C. which is the ultimate temperature of the reflow furnace at the time of evaluation of the reflow resistance, was measured using a viscoelasticity measuring device (trade name “RASII” manufactured by Rheometrics). The measurement was performed at a temperature range of ⁇ 30 to 270 ° C., a temperature increase rate of 5 ° C./min, and a measurement wavelength of 10 Hz.
  • a film adhesive is cut out to a predetermined size (length 5 mm x width 5 mm x thickness 0.025 mm) and attached to a silicon chip (length 5 mm x width 5 mm x thickness 0.725 mm, oxide film coating) at 60 ° C.
  • the produced film adhesive is cut out to a predetermined size (length 8 mm ⁇ width 8 mm ⁇ thickness 0.025 mm) and placed on a glass epoxy substrate (glass epoxy substrate: 420 ⁇ m thickness, copper wiring: 9 ⁇ m thickness, 80 ⁇ m pitch).
  • Affixed semiconductor chip with solder bumps chip size: length 7mm x width 7mm x height 0.15mm, bump: copper pillar and solder, 80 ⁇ m pitch
  • flip chip mounting device "FCB3" product name, manufactured by Panasonic
  • connection resistance value of the obtained semiconductor device was measured using a multimeter (trade name “R6871E” manufactured by ADVANTEST) to evaluate whether initial conduction after mounting was possible.
  • the case where the connection resistance value was 11 to 14 ⁇ was evaluated as “A”, and the connection resistance value other than that or the case where the connection value (Open) occurred and the resistance value was not displayed was evaluated as “B”. .
  • the above-described semiconductor device is molded into a predetermined shape using a sealing material (trade name “CEL9700HF10K” manufactured by Hitachi Chemical Co., Ltd.) under the conditions of 180 ° C., 6.75 MPa, and 90 seconds.
  • the product was cured at 175 ° C. for 5 hours to obtain a package.
  • the package was passed through an IR reflow oven (manufactured by FURUKAWA ELECTRIC, trade name “SALAMANDER”) after high-temperature moisture absorption under JEDEC level 2 conditions.
  • the connectivity of the package after the reflow was evaluated by the same method as the evaluation of the initial connectivity described later, and the reflow resistance was evaluated. The case where there was no separation and the connection was good was designated as “A”, and the case where the separation or connection failure occurred and the resistance value was not displayed was designated as “B”.
  • connection reliability (TCT resistance evaluation)>
  • the above-described semiconductor device is molded into a predetermined shape using a sealing material (trade name “CEL9700HF10K” manufactured by Hitachi Chemical Co., Ltd.) under the conditions of 180 ° C., 6.75 MPa, and 90 seconds.
  • the product was cured at 175 ° C. for 5 hours to obtain a package.
  • this package is left in a thermal cycle tester (manufactured by ETAC, THERMAL SHOCK CHAMBER NT1200), a current of 1 mA is applied, and 25 ° C. 2 minutes / ⁇ 55 ° C. 15 minutes / 25 ° C. 2 minutes / 125 ° C.
  • connection resistance was measured by setting one minute at 25 ° C. for 2 minutes, and the change in the connection resistance after 1000 cycles was evaluated. The case where there was no significant change after 1000 cycles compared to the initial resistance value waveform was designated as “A”, and the case where a difference of 1 ⁇ or more occurred was designated as “B”.
  • the produced film adhesive was cut out to a predetermined size (length 10 mm ⁇ width 5 mm ⁇ thickness 25 ⁇ m) and attached to a comb-type electrode substrate (wiring pitch: 0.05 mm) in which wiring copper wiring was formed on a polyimide substrate, As shown in FIG. 5, a sample in which the film adhesive 40 was laminated on the substrate 20 on which the comb-shaped electrode 90 was formed was produced. In FIG. 5, the film adhesive is not shown for convenience. Subsequently, the sample was cured by being held at 185 ° C. for 3 hours in a clean oven (manufactured by ESPEC Corporation).
  • each sample was taken out and placed in an accelerated life test apparatus (trade name “PL-422R8”, manufactured by HIRAYAMA, condition: 130 ° C./85% relative humidity / 200 hours / 5 V applied), and the insulation resistance was measured. . Throughout 200 hours, the case where the insulation resistance was 10 8 ⁇ or more was evaluated as “A”, and the case where it was less than 10 8 ⁇ was evaluated as “B”.
  • Table 1 shows the composition (unit: parts by mass) of the raw materials of the adhesive compositions of Examples and Comparative Examples, and Table 2 shows the results of each test.
  • Examples 1 to 3 using the acrylic surface treatment filler had high adhesive strength at 260 ° C. after moisture absorption, and were excellent in all the characteristics of reflow resistance, TCT resistance and HAST resistance. .
  • SYMBOLS 10 Semiconductor chip, 15 ... Wiring (connection part), 20 ... Board

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Abstract

La présente invention concerne une composition adhésive servant à encapsuler des parties de connexion dans un dispositif semi-conducteur dans lequel des parties de connexion respectives d'une puce semi-conductrice et d'une carte de circuit imprimé de câblage sont électriquement connectées entre elles ou sinon dans un dispositif semi-conducteur dans lequel les parties de connexion respectives d'une pluralité de puces semi-conductrices sont électriquement connectées entre elles. La composition adhésive contient une résine époxy, un agent thermodurcissant et une charge traitée en surface acrylique.
PCT/JP2011/072462 2010-09-30 2011-09-29 Composition adhésive, procédé de fabrication d'un dispositif semi-conducteur, et dispositif semi-conducteur WO2012043764A1 (fr)

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CN201180047053.3A CN103222040B (zh) 2010-09-30 2011-09-29 粘接剂组合物、半导体装置的制造方法以及半导体装置
JP2012512163A JP5373192B2 (ja) 2010-09-30 2011-09-29 接着剤組成物、半導体装置の製造方法及び半導体装置
KR1020137009904A KR101455951B1 (ko) 2010-09-30 2011-09-29 접착제 조성물, 반도체 장치의 제조 방법 및 반도체 장치
KR1020137029828A KR101728203B1 (ko) 2010-09-30 2011-09-29 접착제 조성물, 반도체 장치의 제조 방법 및 반도체 장치

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JPWO2013161864A1 (ja) * 2012-04-26 2015-12-24 古河電気工業株式会社 フィルム状接着剤用組成物及びその製造方法、フィルム状接着剤、並びに、フィルム状接着剤を用いた半導体パッケージ及びその製造方法
JP2014065776A (ja) * 2012-09-25 2014-04-17 Toray Ind Inc 半導体接着用ポリイミド、ポリイミド樹脂組成物、電子部品およびパワー半導体装置
KR20160019474A (ko) 2013-06-13 2016-02-19 도레이 카부시키가이샤 수지 조성물, 수지 시트 및 반도체 장치의 제조 방법
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JP2015030745A (ja) * 2013-07-31 2015-02-16 住友ベークライト株式会社 樹脂組成物、半導体装置、多層回路基板および電子部品
WO2018235854A1 (fr) * 2017-06-21 2018-12-27 日立化成株式会社 Adhésif pour semi-conducteurs, procédé de production d'un dispositif à semi-conducteurs et dispositif à semi-conducteurs
JPWO2018235854A1 (ja) * 2017-06-21 2020-04-23 日立化成株式会社 半導体用接着剤、半導体装置の製造方法及び半導体装置
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JP2012149266A (ja) 2012-08-09
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